Effect of microstructure and hardness on the grinding abrasive wear resistance of a ball bearing steel

Grinding media wear appears to be non-linear with the time of grinding in a laboratory-scale ball mill. The kinetics of wear can be expressed as a power law of the type w=atb, where the numerical constant a represents wear of a particular microstructure at time t = 1 min and b is the wear exponent which is independent of the particle size prevailing inside a ball mill at any instant of time of grinding. The wear exponent appears to be an indicator of the cutting wear mechanism in dry grinding: a plot of the inverse of the normalised wear exponent (Image ) versusHs (where Hs is the worn surface hardness of the media) yields a curve similar to that of a wear resistance plot obtained in the case of two-body sliding abrasive wear. This method of evaluating the cutting wear resistance of media is demonstrated by employing 15 different microstructures of AISI-SAE 52100 steel balls in dry grinding of quartz in a laboratory-scale ball mill.

Evaluation of interfacial frictional resistance

Three distinct mechanisms — sliding, bonding and bearing — for the mobilisation of interfacial friction have been identified. In the light of these mechanisms, the effect of variation in reinforcement parameters, such as extensibility, flexibility and hardness on mobilisation of interfacial friction, and the mechanisms themselves has been examined. The influence of boundary effects of apparatus on the interfacial friction has been discussed and a method of estimating the same in a pull-out box has been proposed.

Exotic Physics in the Negative-U, Extended-Hubbard Model for Barium Bismuthates?

We point out possibilities for exotic physics in barium bismuthates, from a detailed study of the negative-U, extended-Hubbard model proposed for these systems. We emphasize the different consequences of electronic and phononic mechanisms for negative U. We show that, for an electronic mechanism, the semiconducting phases must be unique, with their transport properties dominated by charge ± 2e Cooperon bound states. This can explain the observed difference between the optical and transport gaps. We propose other experimental tests for this novel mechanism of charge transport.

Involvement of Cytochrome P450 in Conferring Chloroquine Resistance to the Malarial Parasite, Plasmodium falciparum

The higher levels of cytochrone P-450 dependent enzyme activities reported earlier are traced to higher levels of cytochrome P-450 (CYPIIB1/B2 like) messenger RNA in the chloroquine resistant than the sensitive strains. The messenger RNA is also induced by phenobarbitone in the sensitive strain. Pretreatment with phenobarbitone affords partial protection to chloroquine toxicity in the sensitive strain and this is not due to a differential accumulation of the drug.

Electrical Contact Resistance in Thin (<= 0.5 mu m) Gold Plated Contacts: Effect of Gold Plating Thickness

This paper describes the electrical contact resistance (ECR) measurements made on thin gold plated (gold plating of <= 0.5 mu m with a Ni underlayer of similar to 2 mu m) oxygen free high conductivity (OFHC) Cu contacts in vacuum environment. ECR in gold plated OFHC Cu contacts is found to be slightly higher than that in bare OFHC Cu contacts. Even though gold is a softer material than copper, the relatively high ECR values observed in gold plated contacts are mainly due to the higher hardness and electrical resistivity of the underlying Ni layer. It is well known that ECR is directly related to plating factor, which increases with increasing coating thickness when the electrical resistivity of coating material is more than that of substrate. Surprisingly, in the present case it is found that the ECR decreases with increasing gold layer thickness on OFHC Cu substrate (gold has higher electrical resistivity than OFHC Cu). It is analytically demonstrated from the topography and microhardness measurements results that this peculiar behavior is associated with thin gold platings, where the changes in surface roughness and microhardness with increasing layer thickness overshadow the effect of plating factor on ECR.

Chromium-manganese iron alloy system design cast in metal and sand moulds for erosion resistance: a positron lifetime study

Erosion characteristics of high chromium (Cr, 16-19%) alloy cast iron with 5% and 10% manganese (Mn) prepared in metal and sand moulds through induction melting are investigated using jet erosion test setup in both as-cast and heat-treated conditions. The samples were characterised for hardness and microstructural properties. A new and novel non-destructive evaluation technique namely positron lifetime spectroscopy has also been used for the first time to characterise the microstructure of the material in terms of defects and their concentration. We found that the hardness decreases irrespective of the sample condition when the mould type is changed from metal to sand, On the other hand, the erosion volume loss shows an increasing trend. Since the macroscopic properties have a bearing on the microstructure, good credence is obtained from the microstructural features as seen from light and scanning electron micrographs. Faster cooling in the metal mould yielded fine carbide precipitation on the surface. The defect size and their concentration derived from positron method are higher for sand mould compared to metal mould. Lower erosion loss corresponds to smaller size defects in metal mould are the results of quicker heat transfer in the metal mould compared to the sand mould. Heat treatment effects are clearly seen as the reduced concentration of defects and spherodisation of carbides points to this. The erosion loss with respect to the defects size and concentration correlate very well.

Resistance of Norway spruce (Picea abies) to root and butt rot (Heterobasidion parviporum) in peatland and mineral soil

Root and butt rot is the most harmful fungal disease affecting Norway spruce in southern Finland. In approximately 90 % of cases the causal agent is Heterobasidion parviporum. Root and butt rot infections have not been reported in Finnish peatlands. However, the increase in logging operations in peatlands means there is a risk that the fungus will eventually spread to these areas. The aim of this study was to find out the impact of growing site on the resistance of Norway spruce to Heterobasidion parviporum infections. This was investigated by artificially inoculating H. parviporum to spruce trees in pristine mire, drained peatland and mineral soil and comparing the defence reactions. Additionally, the effect of genotype on resistance was studied by comparing the responses of spruce clones representing different geographic origins. The roots and stems of the trees to be sampled were wounded and inoculated with wood dowels pre-colonised by H. parviporum hyphae. The resulting necrosis around the point of inoculation was observed. It was presumed that increased length of necrosis indicates high susceptibility of the tree to the disease. The relationship between growth rate and host resistance was also studied. The results indicated that growing site does not have a statistically significant effect on host resistance. The average length of necrosis around the point of inoculation was 35 mm in pristine mire, 37 mm in drained peatland and 40 mm in mineral soil. It was observed that growth rate does not affect resistance, but that the genotype of the tree does have an effect. The most resistant spruce clone was the one with Russian origin. The results suggest that the spruce stands in peatlands are not more resistant to root and butt rot infections than those in mineral soil. These findings should be taken into consideration when logging peatland forests.

Syntheses, spectroscopy, structures, and conformations of .lambda.3-cyclotriphosphazanes: role of negative hyperconjugation

The reactions of As-chlorocyclotriphosphazane [EtNPCl], with phenols or trifluoroethanol yield the respective aryloxy- or trifluoroethoxy-containingX 3-cyclotriphosphazanes [EtNP(OR)]3 (R = C6H4Br-4 (2),C 6H5 (3C,6 H3-Mez-3,5 (4), C6H3Mez-2,6 (5), CH2CF3 (6)) as their cis-transisomericmixtures. The products have beencharacterized by IRand NMRspectroscopy. Thecrystalstructuresofboth thecis (2a) and trans(2b) isomer_softhep-bromophenoxy derivative have been determined by X-ray diffraction. Crystal data for 2a: triclinic, P1, a = 9.872(4) A, b = 13.438(6) A, c = 13.548(8) A, CY = 117.02(5)', 0 = 96.00(6)', y = 105.38(4)O, Z = 2, final R = 0.080. Crystal data for 2b: monoclinic, P21/n, a = 12.721(6) A, b = 13.468(7) A, c = 17.882(5) A, /3 = 101.62(3)O, Z = 4, final R = 0.066. The cis isomer exhibits a chair-triaxial conformation and the trans isomer a boat-triaxial conformation. Conformational preferences of X3-cyclotriphosphazanes have been probed by both MNDO and ab initio calculations on model systems [HNPXIp (X = H, F). In addition to vicinal lone pair repulsions, negative hyperconjugative interactions involving the nitrogen lone pairs and adjacent P-X Q* orbitals are found to be important (especially when X is an electronegative substituent) in determining the conformational preferences of X3-cyclotriphosphazanes. The calculations also show that the axial - equatorial conversion at phosphorus has a large activation barrier in these systems

Negative differential capacitance in n-GaN/p-Si heterojunctions

Negative differential capacitance (NDC) has been observed in n-GaN/p-Si heterojunctions grown by plasma assisted molecular beam epitaxy (PAMBE). The NDC is observed at low frequencies 1 and 10 kilohertz (kHz) and disappeared at a higher testing frequency of 100 kHz. The NDC is also studied with temperature and found that it has disappeared above 323 degrees C. Current-Voltage (I-V) characteristics of n-GaN /p-Si heterojunction were measured at different temperatures and are attributed to the space-charge-limited current (SCLC). A simple model involving two quantum states is proposed to explain the observed NDC behavior. (C) 2010 Elsevier Ltd. All rights reserved.

Influence of Bi 3+ ions in enhancing the magnitude of positive temperature coefficients of resistance in n-BaTiO3 ceramics

Bi3+ ions substituting at Ba-sites in a limited concentration range with another donor dopant occupying the Ti-sites in polycrystalline BaTiO3 enhanced the positive temperature coefficient of resistance (PTCR) by over seven orders of magnitude. These ceramics did not require normal post sinter annealing or a change to an oxygen atmosphere during annealing. These ceramics had low porosities coupled with better stabilities to large applied electric fields and chemically reducing atmospheres. Bi3+ ions limited the grain growth to less than 8 mum in size, they enhanced the concentration of acceptor-type trap centres at the grain-boundary-layer regions and maintained complete tetragonality at low grain sizes in BaTiO3 ceramics.

Differential influence of ions on the copy number of plasmids in Thiobacillus ferrooxidans

Thiobacillus ferrooxidans MAL4-1, an isolate from Malanjkhand copper mines, India, was adapted to grow in the presence of high concentration (30 gL(-1)) of Cu2+, resulting in a 15-fold increase in its tolerance to Cu2+. While wild-type T. ferrooxidans MAL4-1 contained multiple plasmids, cultures adapted to Cu2+ concentrations of 20 gL(-1) or more showed a drastic reduction in the copy number of the plasmids. The reduction for three of the plasmids was estimated to be over 50-fold. Examination of the plasmid profiles of the strains adapted to high concentration of SO42- anion (as Na2SO4 or ZnSO4) indicated that the reduction in plasmid copy number is not owing to SO42- anion, but is specific for Cu2+. The effect of mercury on the plasmids was similar to that of copper. Deadaptation of the Cu2+- Or Hg2+-adapted T. ferrooxidans resulted in restoration of the plasmids to the original level within the first passage. The fact that the plasmid copy number, in general, is drastically reduced in Cu2+-adapted T. ferrooxidans suggests that resistance to copper is chromosome mediated. This is the first report of a selective negative influence of copper ions on the copy number of plasmids in T. ferrooxidans.

Characterization of a Negative cis-Acting DNA Element Regulating the Transcription of CYP2B1/B2 Gene in Rat Liver

The region -160 to -127 nt of the upstream of CYP-2B1/B2 gene has been found to function as a negative cis-acting element on the basis of DNase-I footprint and gel mobility shift assays as well as cell-free transcriptional assays using Bal-31 mutants. A reciprocal relationship in the interaction of the negative and the recently characterized positive elements with their respective protein factors has been found under repressed and induced conditions of the gene. The negative element also harbors the core glucocorticoid responsive sequence, TGTCCT. It is concluded that the negative element mediates the repressed state of the gene under the uninduced condition and also mediates the repressive effect of dexamethasone, when given along with the inducer phenobarbitone in rats. Dexamethasone is able to antagonize the effects of phenobarbitone at as low a concentration as 100 mu g/kg body wt in these animals. (C) 1995 Academic Press,Inc.

Reactions of cyanogen radical with alkanes and an explanation for negative temperature dependence of rate constants

Reactions of cyanide radicals with alkanes have been investigated by ab initio methods. It is found that the potential energy surface for reaction of CN with a primary C-H bond in methane has a small positive barrier while reactions of CN with a secondary and a tertiary C-H bond in alkanes are barrierless at the correlated level. A simple explanation for the obtained negative temperature dependence of rate constants for reactions of CN with a secondary and a tertiary C-H bond in alkanes are given in terms of the collision theory of bimolecular reactions. It is shown that for barrierless reactions the negative temperature dependence of the rate constants is attributed to the variation of the pre-exponential factor with temperature.

Surface resistance and residual losses of Ag?doped YBa2Cu3O7?? thin films on sapphire

High?quality Ag?doped YBa2Cu3O7?? thin films have been grown by laser ablation on R?plane ?1102? sapphire without any buffer layer. Thin films have been found to be highly c?axis oriented with Tc=90 K, transition width ?T?1 K, and transport Jc=1.2×106 A?cm?2 at 77 K in self?field conditions. The microwave surface resistance of these films measured on patterned microstrip resonators has been found to be 530 ?? at 10 GHz at 77 K which is the lowest reported on unbuffered sapphire. Improved in?plane epitaxy and reduced reaction rate between the substrate and the film caused due to Ag in the film are believed to be responsible for this greatly improved microwave surface resistance. © 1995 American Institute of Physics.