995 resultados para Montigny, Floris de Montmorency, baron de, 1528-1570.


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研究了Mg、Mo、Zn、维生素B1以及烟酸等微量营养物质对活性污泥降解CODCr活性的 影响,同时,对微量营养物质作用前后处理系统微生物群落结构进行了比较研究。试验结果表明:毛 纺废水缺乏生物处理系统所需足够的微量营养物质;不同种类和浓度的微量营养物质对活性污泥降 解CODCr活性的影响效果也不相同,Mg、Mo、Zn、雏生素B1和烟酸的最佳浓度分别为5 mg/L, 2 mg/L,1 mg/L,1 mg/L和1 mg/L;其最佳促进效果可使CODCr降解速率分别达到对照系统的 180%、140%、130%,

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通过室内培养和盆栽试验,研究了Se对黄棕壤过氧化氢酶、脱氢酶、脲酶、碱性磷酸酶、转化酶的生态毒理效应.结果表明,土壤Se对脱氢酶、碱性磷酸酶、转化酶有“抗性酶活性”现象.土壤Se对土壤过氧化氢酶和脲酶活性有抑制作用,脲酶受Se的抑制作用最强.土壤Se含量与脲酶抑制率之间具有显著相关性,脲酶抑制率可作为Se生态风险评价的一项生物指示物.

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Taper-free and vertically oriented Ge nanowires were grown on Si (111) substrates by chemical vapor deposition with Au nanoparticle catalysts. To achieve vertical nanowire growth on the highly lattice mismatched Si substrate, a thin Ge buffer layer was first deposited, and to achieve taper-free nanowire growth, a two-temperature process was employed. The two-temperature process consisted of a brief initial base growth step at high temperature followed by prolonged growth at lower temperature. Taper-free and defect-free Ge nanowires grew successfully even at 270 °C, which is 90 °C lower than the bulk eutectic temperature. The yield of vertical and taper-free nanowires is over 90%, comparable to that of vertical but tapered nanowires grown by the conventional one-temperature process. This method is of practical importance and can be reliably used to develop novel nanowire-based devices on relatively cheap Si substrates. Additionally, we observed that the activation energy of Ge nanowire growth by the two-temperature process is dependent on Au nanoparticle size. The low activation energy (∼5 kcal/mol) for 30 and 50 nm diameter Au nanoparticles suggests that the decomposition of gaseous species on the catalytic Au surface is a rate-limiting step. A higher activation energy (∼14 kcal/mol) was determined for 100 nm diameter Au nanoparticles which suggests that larger Au nanoparticles are partially solidified and that growth kinetics become the rate-limiting step. © 2011 American Chemical Society.

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We report straight and vertically aligned defect-free GaAs nanowires grown on Si(111) substrates by metal-organic chemical vapor deposition. By deposition of thin GaAs buffer layers on Si substrates, these nanowires could be grown on the buffer layers with much less stringent conditions as otherwise imposed by epitaxy of III-V compounds on Si. Also, crystal-defect-free GaAs nanowires were grown by using either a two-temperature growth mode consisting of a short initial nucleation step under higher temperature followed by subsequent growth under lower temperature or a rapid growth rate mode with high source flow rate. These two growth modes not only eliminated planar crystallographic defects but also significantly reduced tapering. Core-shell GaAs-AlGaAs nanowires grown by the two-temperature growth mode showed improved optical properties with strong photoluminescence and long carrier life times. © 2011 American Chemical Society.

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The presence of the odorous compounds, 2-methylisoborneol (MIB) and geosmin, as well as causative microorganisms in brackish intensive cultivation fishponds in Tianjin, China that had a severe earthy-musty odor were evaluated. The results revealed that MIB was the primary odorous compound present in the Tianjin fishponds, with a concentration ranging from 0.53-5302.7 ng.L-1. Furthermore, the concentration of MIB was found to be closely correlated with the gross biomass of actinomycetes in the water, which ranged from 10.67-1528.24 x 10(6) cfu.ml(-1). Therefore, the sequences of the 16 SrRNA and morphological characteristics of the actinomycetes in the brackish fishponds were investigated. The results revealed that the actinomycetes in the brackish fishponds included 9 species of common and dominant actinomycetes belonging to 4 genera. Of these genera, Streptomyces were the dominant species, and Streptomyces, Nocardioides and Micromonospora were the most common species in the fishponds evaluated. Next, the ability of each of the isolated Streptomyces to produce MIB was measured under laboratory culture conditions. Streptomyces Sp2 was found to have a strong ability to produce MIB, which indicates that this strain may be the primary source of the earthy-musty odor reported in brackish intensive cultivation fishponds in Tianjin, China.

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The rocking response of structures subjected to strong ground motions is a problem of 'several scales'. While small structures are sensitive to acceleration pulses acting successively, large structures are more significantly affected by coherent low frequency components of ground motion. As a result, the rocking response of large structures is more stable and orderly, allowing effective isolation from the ground without imminent danger of overturning. This paper aims to characterize and predict the maximum rocking response of large and flexible structures to earthquakes using an idealized structural model. To achieve this, the maximum rocking demand caused by different earthquake records was evaluated using several ground motion intensity measures. Pulse-type records which typically have high peak ground velocity and lower frequency content caused large rocking amplitudes, whereas non-pulse type records caused random rocking motion confined to small rocking amplitudes. Coherent velocity pulses were therefore identified as the primary cause of significant rocking motion. Using a suite of pulse-type ground motions, it was observed that idealized wavelets fitted to velocity pulses can adequately describe the rocking response of large structures. Further, a parametric analysis demonstrates that pulse shape parameters affect the maximum rocking response significantly. Based on these two findings, a probabilistic analysis method is proposed for estimating the maximum rocking demand to pulse-type earthquakes. The dimensionless demand maps, produced using these methods, have predictive power in the near-field provided that pulse period and amplitude can be estimated a priori. Use of this method within a probabilistic seismic demand analysis framework is briefly discussed. © 2013 Springer Science+Business Media Dordrecht.

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The Ni silicide formed at low temperature on Si nanowire has been analyzed by atom probe tomography (APT) thanks to a special technique for sample preparation. A method of preparation has been developed using the focused ion beam (FIB) for the APT analysis of nanowires (NWs). This method allow for the measurement of the radial distribution when a NW is cut, buried in a protective metal matrix, and finally mounted on the APT support post. This method was used for phosphorous doped Si NWs with or without a silicide shell, and allows obtaining the concentration and distribution of chemical elements in three-dimensions (3D) in the radial direction of the NWs. The distribution of atoms in the NWs has been measured including dopants and Au contamination. These measurements show that δ-Ni2Si phase is formed on Si NW, Au is found as cluster at the Ni/δ-Ni2Si interface and P is segregated at the δ-Ni2Si/ Si NW interface. The results obtained on NWs after silicidation were compared with the silicide on the Si substrate, showing that the same silicide phase δ-Ni2Si formed in both cases (NWs and substrate). © 2013 Elsevier B.V. All rights reserved.

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A thermo-optic variable optical attenuator (VOA) based on a Mach-Zehnder interferometer and multimode-interference coupler is fabricated. Not a single-mode but a multimode waveguide is used as the input and output structures of the optical field, which greatly reduces the coupling loss of the VOA with a normal single-mode fiber. The insertion loss of the fabricated VOA is 2.52 to 2.82 dB at the wavelength of 1520 to 1570 nm. The polarization dependent loss is 0.28 to 0.45 dB at the same wavelength range. Its maximum attenuation range is up to 26.3 dB when its power consumption is 369 mW. The response frequency of the fabricated VOA is about 10 kHz. (C) 2004 Society of Photo-Optical Instrumentation Engineers.

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Silicon-rich silicon oxide (SRSO) films are prepared by plasma-enhanced chemical vapor deposition method at the substrate temperature of 200degreesC. The effect of rapid thermal annealing and hydrogen plasma treatment on tire microstructure and light-emission of SRSO films are investigated in detail using micro-Raman spectroscopy, Fourier transform infrared (FTIR) spectroscopy and photoluminescence (PL) spectra. It is found that the phase-separation degree of the films decreases with increasing annealing temperature from 300 to 600degreesC, while it increases with increasing annealing temperature from 600 to 900degreesC. The light-emission of the films are enhanced with increasing annealing temperature up to 500degreesC, while it is rapidly reduced when the annealing temperature exceeds 600degreesC. The peak position of the PL spectrum blueshifts by annealing at the temperature of 300degreesC, then it red-shifts with further raising annealing temperature. The following hydrogen plasma treatment results in a disproportionate increase of the PL intensity and a blueshift or redshift of the peak positions, depending on the pristine annealing temperature. It is thought that the size of amorphous silicon clusters, surface structure of the clusters and the distribution of hydrogen in the films can be changed during the annealing procedure. The results indicate that not only cluster size but also surface state of the clusters plays an important role in the determination of electronic structure of the amorphous silicon cluster and recombination process of light-generated carriers.

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This paper proposes a smart frequency presetting technique for fast lock-in LC-PLL frequency synthesizer. The technique accurately presets the frequency of VCO with small initial frequency error and greatly reduces the lock-in time. It can automatically compensate preset frequency variation with process and temperature. A 2.4GHz synthesizer with 1MHz reference input was implemented in 0.35 mu m CMOS process. The chip core area is 0.4mm(2). Output frequency of VCO ranges from 2390 to 2600MHz. The measured results show that the typical lock-in time is 3 mu s. The phase noise is -112dBc/Hz at 600KHz offset from center frequency. The test chip consumes current of 22mA that includes the consumption of the I/O buffers.

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XML文档存放的信息需要受到访问控制策略的保护.现有的一些面向XML文档的访问控制模型都是基于自主访问控制策略或基于角色的访问控制.高安全等级系统需要强制访问控制来保证系统内信息的安全.首先扩展了XML文档模型使其包含标签信息,并给出了扩展后的文档模型需要满足的规则.然后通过讨论XML文档上的4种操作,描述了面向XML文档的细粒度强制访问控制模型的详细内容.该模型基于XML模式技术,它的控制粒度可以达到文档中的元素或者属性.最后讨论了该模型的体系结构和一些实现机制。

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公平性、透明性是联合决策的基本安全需求.结合多机构商务合作背景,利用具有同态性质的Paillier公钥密码系统和门限密码技术,提出了面向有差异群体的联合决策策略与方案,并对其安全性进行了分析和证明.

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An actively mode-locked fiber ring laser based on cross-gain modulation (XGM) in a semiconductor optical amplifier (SOA) is demonstrated to operate stably with a simple configuration. By forward injecting an easily-generated external pulse train, the mode-locked fiber laser can generate an optical-pulse sequence with pulsewidth about 6 ps and average output power about 7.9 mW. The output pulses show an ultra-low RMS jitter about 70.7 fs measured by a RF spectrum analyzer. The use of the proposed forward-injection configuration can realize the repetition-rate tunability from I to 15 GHz for the generated optical-pulse sequences. By employing a wavelength-tunable optical band-pass filter in the laser cavity, the operation wavelength of the designed SOA-based actively mode-locked fiber laser can be tuned continuously in a wide span between 1528 and 1565 nm. The parameters of external-injection optical pulses are studied experimentally to optimize the mode-locked fiber laser. (C) 2009 Elsevier B.V. All rights reserved.

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