In situ synthesis of silica gel nanowire/Na+-montmorillonite nanocomposites by the sol-gel route

Silica-gel nanowire/Na+-montmorillonite (Na+-MMT) nanocomposites were prepared by the in situ sol-gel process of tetraethyl orthosilicate (TEOS) in the presence of Na+-MMT and ammonia as catalyst. Microstructure characterization of the nanocomposites was done by SEM, , EDX, XRD and FTIR. It was found that a lot of silica-gel nanowires grew along the edges of Na+-MMT. The combination between the nanowires and Na+-MMT was accomplished via polycondensation of the hydrolyzed TEOS and the edge-OH groups of Na+-MMT.

The influence of tip performance on scanning probe lithography

Scanning probe lithography (SPL), employing the tip of an atomic force microscope to mechanically pattern various materials in nanoscale region has provided a simple but significant method for making nanostructures. We use this technique for the lithography of several kinds of substrate surfaces. The tip performance has been found to be a crucial factor in the lithographic process. Four types of cantilevers are employed in nanolithography, including standard silicon nitride (DNP), tapping mode(TM) etched silicon (TESP(W)), uncoated silicon cantilever (NSC21/50) and conductive platinum/iridium-coated probe. Results demonstrate that tips with smaller spring constants can not be used for physically scribing and nanomanipulating in our experiment. The possible mechanism of our experiment is discussed.

Determination of Nb and Ta in Nb/Ta minerals by inductively coupled plasmas optical emission spectrometry using slurry sample introduction

The determination of Nb and Ta in Nb-Ta minerals was accomplished by slurry nebulization inductively coupled plasma optical emission spectrometry (ICP-OES), using a clog-free V-groove ceramic nebulizer. Samples were first wet-ground to appropriate particle sizes with narrow size distribution and 90% of the particles in the slurry were smaller than 2.32 mu m in diameter. Subsamples were then dispersed in pH 9 aqueous solutions, and agitated in an ultrasonic bath for 15 min prior to analysis. Due to the lack of slurry standards matching well with the samples, calibration was simply carried out using aqueous solution standards. Results were compared with those obtained from a conventional fusion decomposition procedure and acid digestion procedures and a good agreement between the measured and referred values was obtained. The technique provided a good alternative for the rapid determination of Nb and/or Ta in their corresponding minerals.

Highly efficient red electroluminescence induced by efficient electron injection and exciton confinement

HigWy efficient DCJTB-doped device was realized by enhanced electron injection and exciton confinement. A fluorine end-capped linear phenylene/oxadiazole oligomer 2,5-bis(4-fluorobiphenyl-4'-yl)-1,3,4-oxadiazole (1) and a trifluoromethyl end-capped oligomer 2,5-bis(4-trifluoromethylbiphenyl-4'-yl)-1,3,4-oxadiazole (2) were designed and incorporated as an electron transporting/hole blocking material in the device structure ITO/NPB (60 mn)/DCJTB:Alq(3) (0.5%, 10 nm)/1 or 2 (20 nm)/Alq(3) (30 mn)/LiF (1 nm)/Al (100 nm). The devices showed highly efficient red luminescence. In particular, the device based on 1 achieved pure red luminescence at 620 run originating from DCJTB, with a narrow FWHI of 65 nm, maximal brightness of 13,300 cd/m(2) at voltage of 20.8 V and current density of ca. 355 mA/cm(2). High current and power efficiencies (> 3.6 cd/A. 1.01m/W) were retained within a wide range of current densities. Our results show efficient and stable DCJTB-doped red electroluminescence could be anticipated for practical applications by taking advantage of the present approaches. The control experiments using BCP were also studied.

Synthesis and characterization of a novel hybrid single crystal [Ga-3(PO4)(3)F-2]H3O center dot (H3NCH2CH2)(2)NH2

A novel three-dimensional fluorinated gallium phosphate has been hydrothermally,synthesized by using diethylenetriamine as an organic structure-directing agent. X-ray single crystal structure analysis indicates this compound crystallizes in the orthorhombic space group P-bca, a = 1. 605 6 (7) nm, b = 1.011 4 (4) nm, c=1. 854 6(5) nm, V=3. 011 6(19) nm(3), Z=4. The three-dimensional framework based on linkage of corner-sharing polyhedron PO4, GaO4F and GaO4F2 delimit ten-ring channels along b axis in which the triply protonated amines are located serving as charge compensating guests and supporters.

Reaction and formation of crystalline silicon oxynitride in Si-O-N systems under solid high pressure

Oxidized amorphous Si3N4 and SiO2 powders were pressed alone or as a mixture under high pressure (1.0-5.0 GPa) at high temperatures (800-1700 degreesC). Formation of crystalline silicon oxynitride (Si(2ON)2) was observed from amorphous silicon nitride (Si3N4) powders containing 5.8 wt% oxygen at 1.0 GPa and 1400 degreesC, The Si2ON2 coexisted with beta -Si3N4 with a weight fraction of 40 wt%, suggesting that all oxygen in the powders participated in the reaction to form Si2ON2. Pressing a mixture of amorphous Si3N4 of lower oxygen (1.5 wt%) and SiO2 under 1.0-5.0 GPa between 1000 degrees and 1350 degreesC did not give Si2ON2 phase, but yielded a mixture of alpha,beta -Si3N4, quartz, and coesite (a high-pressure form of SiO2). The formation of Si2ON2, from oxidized amorphous Si3N4 seemed to be assisted by formation of a Si-O-N melt in the system that was enhanced under the high pressure.

Formation of epsilon-FeXN/BN magnetic nanocomposite and its thermodynamic and kinetic analyses

A nanocomposite of nanometer-sized magnetic granular epsilon-FeXN embedded in a nonmagnetic amorphous boron nitride matrix was prepared by ball milling mixture of alpha-Fe and hexagonal boron nitride in argon atmosphere. The grain size of the epsilon-FeXN alloy was about 10-20 nm. The nitrogen concentration in the epsilon-FeXN alloy increases with extending milling time. Both thermodynamic calculation and the present experiment show that iron and nitrogen atoms have higher alloying driving force than iron and boron atoms. Analyses of thermodynamics and kinetics about formation of the epsilon-FeXN alloy suggested that the formation of the epsilon-FeXN alloy is related to amorphization of the hexagonal boron nitride and refinement of the alpha-Fe. II was found from the present experiment that a critical grain size of the alpha-Fe reacting with nitrogen in the amorphous boron nitride is about 8 nm.

FTIR study of CO and NO adsorbed on nitrided CoMo/Al2O3 catalysts

The states of surface Co and Mo sites on nitrided CoMo supported on Al2O3 were studied by adsorption of CO and NO as IR probe molecules. Three IR bands at 2200, 2060 and 2025 cm(-1) were detected for adsorbed CO. These bands can be respectively attributed to the surface NCO species as a result of CO adsorbed on surface N sites, and linearly adsorbed CO on surface Co and Mo sites in low valence states. The addition of cobalt to the Mo nitride diminishes the band at 2200 cm(-1). This may be due to either the change of the surface structure of the supported nitride, or the formation of a new phase, CoxMoyNz, as suggested in the literature Kim et al., Catal. Lett., 1997, 43, 91 and Logan et al., Catal. Lett., 1998, 56, 165. Comparison of CO and NO adsorption on Mo2N/Al2O3 and CoMoNx/Al2O3 indicates that the presence of cobalt can promote the reduction and nitridation of Mo.

Nitridation of magnesium powder of nanometric size from the thermal decomposition of magnesium anthracene

Highly reactive magnesium powder of nanometric size, which was generated by the thermal decomposition of magnesium anthracene . 3THF under vacuum, can react with N-2 under atmospheric pressure, even at 300 degrees C, to form magnesium nitride. The rate and extent of the reaction can be improved effectively by doping the magnesium powder with a small amount of nickel or titanium compounds.

XPS and XRD studies of fresh and sulfided Mo2N

Mo surface species of molybdenum nitride and their changes under sulfiding conditions were investigated by XRD and XPS. Mo2N was synthesized by temperature-programmed reaction of MoO3, with NH3. The decomposition of the Mo3d spectra gave a Mo3d doubler which corresponded to Modelta+ (2 less than or equal to delta < 4), Mo4+ and Mo5+ Or Mo6+ species. The BE of the Mo species of passivated Mo2N shifted to higher energy level compared with the freshly prepared Mo2N due to the oxidation of Mo nitride during passivation. When Mo2N was contacted for 4 h with a 15% H2S-H-2 mixture at 400 degrees C, the XRD spectra did not reveal any new phase, which indicates a high stability of Mo2N against sulfidation, but XPS data showed the presence of sulfur, including S-0 and S2- species, and a decrease of the N/Mo atomic ratio revealed some changes in surface composition. More than one monolayer of Mo2N was transformed to sulfide. It is probable that the oxygen incorporated during passivation reacted with sulfur and formed a thin layer of molybdenum sulfide on the Mo2N surface. (C) 1998 Elsevier Science B.V. All rights reserved.

Mast Cell Curve-Response in Partial Achilles Tendon Rupture After 830 nm Phototherapy

Objective: the aim of this study was to quantify mast cells at different time intervals after partial Achilles tendon rupture in rats treated with low-level laser therapy (LLLT). Background data: There is a high incidence of lesions and ruptures in the Achilles tendon that can take weeks and even months to heal completely. As the mast cells help in the healing repair phase, and LLLT has favorable effects on this tissue repair process, study of this modality on the quantity of mastocytes in the ruptured tendon is relevant. Methods: Sixty Wistar rats were subjected to partial Achilles' tendon rupture by direct trauma, randomized into 10 groups, and then divided into the group treated with 80mW aluminum gallium arsenide infrared laser diode, continuous wave, 2.8W/cm(2) power density, 40J/cm(2) energy density, and 1.12J total energy, and the simulation group. Both the groups were subdivided according to the histological assessment period of the sample, either 6h, 12h, 24h, 2 days, or 3 days after the rupture, to quantify the mastocytes in the Achilles' tendon. Results: the group subjected to LLLT presented a greater quantity of mastocytes in the periods of 6h, 12h, 24h, 2 days, and 3 days after rupture, compared with the simulation groups, but differences were detected between the sample assessment periods only in the simulation group. Conclusions: LLLT was shown to increase the quantity of mastocytes in the assessment periods compared with the simulation groups.

Synchrotron-laser pump-probe luminescence spectroscopy: Correlation of electronic defect states with x-ray absorption in wide-gap solids

Poolton, Nigel; Hamilton, B.; Evans, D.A., (2005) 'Synchrotron-laser pump-probe luminescence spectroscopy: Correlation of electronic defect states with x-ray absorption in wide-gap solids', Journal of Physics D: Applied Physics 38 pp.1478-1484 RAE2008

Theory of elasticity and electric polarization effects in the group-III nitrides

In this work, the properties of strained tetrahedrally bonded materials are explored theoretically, with special focus on group-III nitrides. In order to do so, a multiscale approach is taken: accurate quantitative calculations of material properties are carried out in a quantum first-principles frame, for small systems. These properties are then extrapolated and empirical methods are employed to make predictions for larger systems, such as alloys or nanostructures. We focus our attention on elasticity and electric polarization in semiconductors. These quantities serve as input for the calculation of the optoelectronic properties of these systems. Regarding the methods employed, our first-principles calculations use highly- accurate density functional theory (DFT) within both standard Kohn-Sham and generalized (hybrid functional) Kohn-Sham approaches. We have developed our own empirical methods, including valence force field (VFF) and a point-dipole model for the calculation of local polarization and local polarization potential. Our local polarization model gives insight for the first time to local fluctuations of the electric polarization at an atomistic level. At the continuum level, we have studied composition-engineering optimization of nitride nanostructures for built-in electrostatic field reduction, and have developed a highly efficient hybrid analytical-numerical staggered-grid computational implementation of continuum elasticity theory, that is used to treat larger systems, such as quantum dots.

Atomic layer deposition of interface control layers for the fabrication of III/V MOS devices

The continued advancement of metal oxide semiconductor field effect transistor (MOSFET) technology has shifted the focus from Si/SiO2 transistors towards high-κ/III-V transistors for high performance, faster devices. This has been necessary due to the limitations associated with the scaling of the SiO2 thickness below ~1 nm and the associated increased leakage current due to direct electron tunnelling through the gate oxide. The use of these materials exhibiting lower effective charge carrier mass in conjunction with the use of a high-κ gate oxide allows for the continuation of device scaling and increases in the associated MOSFET device performance. The high-κ/III-V interface is a critical challenge to the integration of high-κ dielectrics on III-V channels. The interfacial chemistry of the high-κ/III-V system is more complex than Si, due to the nature of the multitude of potential native oxide chemistries at the surface with the resultant interfacial layer showing poor electrical insulating properties when high-κ dielectrics are deposited directly on these oxides. It is necessary to ensure that a good quality interface is formed in order to reduce leakage and interface state defect density to maximise channel mobility and reduce variability and power dissipation. In this work, the ALD growth of aluminium oxide (Al2O3) and hafnium oxide (HfO2) after various surface pre-treatments was carried out, with the aim of improving the high-κ/III-V interface by reducing the Dit – the density of interface defects caused by imperfections such as dangling bonds, dimers and other unsatisfied bonds at the interfaces of materials. A brief investigation was performed into the structural and electrical properties of Al2O3 films deposited on In0.53Ga0.47As at 200 and 300oC via a novel amidinate precursor. Samples were determined to experience a severe nucleation delay when deposited directly on native oxides, leading to diminished functionality as a gate insulator due to largely reduced growth per cycle. Aluminium oxide MOS capacitors were prepared by ALD and the electrical characteristics of GaAs, In0.53Ga0.47As and InP capacitors which had been exposed to pre-pulse treatments from triethyl gallium and trimethyl indium were examined, to determine if self-cleaning reactions similar to those of trimethyl aluminium occur for other alkyl precursors. An improved C-V characteristic was observed for GaAs devices indicating an improved interface possibly indicating an improvement of the surface upon pre-pulsing with TEG, conversely degraded electrical characteristics observed for In0.53Ga0.47As and InP MOS devices after pre-treatment with triethyl gallium and trimethyl indium respectively. The electrical characteristics of Al2O3/In0.53Ga0.47As MOS capacitors after in-situ H2/Ar plasma treatment or in-situ ammonium sulphide passivation were investigated and estimates of interface Dit calculated. The use of plasma reduced the amount of interface defects as evidenced in the improved C-V characteristics. Samples treated with ammonium sulphide in the ALD chamber were found to display no significant improvement of the high-κ/III-V interface. HfO2 MOS capacitors were fabricated using two different precursors comparing the industry standard hafnium chloride process with deposition from amide precursors incorporating a ~1nm interface control layer of aluminium oxide and the structural and electrical properties investigated. Capacitors furnished from the chloride process exhibited lower hysteresis and improved C-V characteristics as compared to that of hafnium dioxide grown from an amide precursor, an indication that no etching of the film takes place using the chloride precursor in conjunction with a 1nm interlayer. Optimisation of the amide process was carried out and scaled samples electrically characterised in order to determine if reduced bilayer structures display improved electrical characteristics. Samples were determined to exhibit good electrical characteristics with a low midgap Dit indicative of an unpinned Fermi level

Facet-embedded thin-film III-V edge-emitting lasers integrated with SU-8 waveguides on silicon.

A thin-film InGaAs/GaAs edge-emitting single-quantum-well laser has been integrated with a tapered multimode SU-8 waveguide onto an Si substrate. The SU-8 waveguide is passively aligned to the laser using mask-based photolithography, mimicking electrical interconnection in Si complementary metal-oxide semiconductor, and overlaps one facet of the thin-film laser for coupling power from the laser to the waveguide. Injected threshold current densities of 260A/cm(2) are measured with the reduced reflectivity of the embedded laser facet while improving single mode coupling efficiency, which is theoretically simulated to be 77%.