996 resultados para Biochemical variation


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The mitochondrial DNA control region is amplified and sequenced from 8 genera and 10 species of gobiobotine fishes. The phylogenetic tree of Gobiobotinae and some representative species of other Cyprinid subfamilies obtained by the method of neighborhood joining, maximum likelihood and maximum parsimony with Danio rerio as an outgroup indicates that Gobiobotinae fishes are a monophyletic group which is close to Gobioninae subfamily. Gobiobotinae should be included into subfamily Gobioninae in terms of phylogenetic analysis. The research result supports that Gobiobotinae can be divided into genus Xenophysogobio and Gobiobotia. Xenophysogabio is the most primitive genera in the subfamily.

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The duration of occurrence of two morphological forms of Keratella cochlearis varied seasonally in Lake Donghu, a shallow eutrophic lake in China. The total lengths of both K cochlearis tecta and K cochlearis cochlearis were negatively correlated with the water temperature. Total length of K cochlearis tecta may also have been influenced by the degree of eutrophication or available food.

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The molecular variation in Bothriocephalus acheilognathi Yamaguti, 1934 from 11 species of freshwater fish collected in Australia, China, the Czech Republic, England and Hawaii was investigated by determining the nucleotide sequences of the internal transcribed spacer region. The length of the first and second internal transcribed spacer sequences of multiple individuals ranged from 553 to 571 bp and 553 to 615 bp, and the G + C content from 53.1 to 53.5%. The percentage sequence divergence varied between 0 and 0.9% in the ITS1 and 0 and 6.6% in the ITS2, respectively, indicating the occurrence of intraspecific variation. It is demonstrated that the fragment length variation resulted primarily from microsatellite polymorphisms present in the ITS region, especially in the ITS2 region. Phylogenetic analyses revealed that B. acheilognathi examined in this study consisted of three closely related genotypes with certain degrees of host-specificity, and the genotype representing isolates from Cyprinus carpio L. was the most common and diverse form within the species B. acheilognathi.

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Cytological and biochemical alterations of crucial carp (Carassius auratus) hepatocytes were characterized after exposure to sediments from a lake contaminated with dioxins and other industrial chemicals. Carp were exposed in 20 L water containing 25, 50, or 100 g of contaminated sediment for 2 and 4 weeks. Ultrastructural changes in the liver were characterized by severe enlargement of hepatocytes. Alterations in the cell. included formation of condensed and irregular cell nucleus, polynuclei, dispersed heterochromatin, enlargement of the nucleolus, and degeneration of the nucleus. Mitochondrial numbers were reduced and cristae were deformed. Myelin figures and lysosomes were increased, and sometimes cell organelles and cell matrix were totally lost after 4 weeks of exposure. The ultrastructural alterations were correlated with exposure time and sediment concentrations. Hepatosometic index was significantly increased in experimental groups at 2 and 4 weeks as compared with the control group. EROD enzyme activities were strongly induced in liver. A trend from rough endoplasmic reticulum (RER) to SER was observed. Our results suggest that the dioxin-like compounds bound by sediment were bioavailable to C. auratus and cause sublethal effects.

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Seasonal variation of the kinetic parameters of total alkaline phosphatase activity (APA) was studied in a shallow Chinese freshwater lake (Donghu Lake). At the three experimental stations the values of V-max of APA were higher and the negative correlation between orthophosphate and the total APA specific activity (V-max/Chl.) was stronger during summer (from June to September) P depletion. At the same time, the values of Michaelis constant (K-m) of APA at the three stations decreased. Phytoplankton seem to compensate for their phosphorus deficiency not only by an increase in enzyme production but also by an improved ability to use low substrate concentrations. (C) 1997 Elsevier Science Ltd.

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Frequency response of a fiber ring resonator (FRR) composed of an ordinary optical coupler and a segment of optical fiber is theoretically and experimentally investigated. The frequency response equation based oil small-signal modulation is derived and studied in detail. It is shown that the shape of the frequency response curve is very sensitive to the wavelength; as a result, the FRR can be applied to measure the wavelength of a lightwave source with high resolution. With this method, we demonstrate the measurement of tiny changes of wavelength of a DFB laser. (C) 2009 Wiley Periodicals. Inc. Microwave Opt Technol Lett 51 2444-2448, 2009 Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.24608

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ZnO thin films were prepared on Si (1 11) substrates at various temperatures from 250 to 700 degrees C using pulsed laser deposition (PLD) technique in order to investigate the structural and optical properties of the films. The structural and morphological properties of the films were investigated by XRD and SEM measurements, respectively. The quality of the films was improved with the increase of the temperature. By XRD patterns the FWHMs of the (0 0 2) peaks of the ZnO films became narrower when the temperatures were above 500 degrees C. The FWHMs of the peaks of (0 0 2) of the films were as narrow as about 0. 19 degrees when films were grown at 650 and 700 degrees C. This indicates the superior crystallinity of the films. The optical properties of the films were studied by photoluminescence spectra using a 325 nm He-Cd laser. The two strongest UV peaks were found at 377.9 nm from ZnO films grown at 650 and 700 degrees C. This result is consistent with that of the XRD investigation. Broad bands in visible region from 450 to 550 nm were also observed. Our works suggest that UV emissions have close relations with not only the crystallinity but also the stoichiometry of the ZnO films. (c) 2005 Elsevier Ltd. All rights reserved.

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Using the measured capacitance- voltage curves of Ni Schottky contacts with different areas on strained AlGaN/ GaN heterostructures and the current- voltage characteristics for the AlGaN/ GaN heterostructure field- effect transistors at low drain- source voltage, we found that the two- dimensional electron gas (2DEG) electron mobility increased as the Ni Schottky contact area increased. When the gate bias increased from negative to positive, the 2DEG electron mobility for the samples increased monotonically except for the sample with the largest Ni Schottky contact area. A new scattering mechanism is proposed, which is based on the polarization Coulomb field scattering related to the strain variation of the AlGaN barrier layer. (C) 2007 American Institute of Physics.

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A 275 mu m thick GaN layer was directly grown on the SiO2-prepatterned sapphire in a home-built vertical hydride vapour phase epitaxy (HVPE) reactor. The variation of optical and structure characteristics were microscopically identified using spatially resolved cathodeluminescence and micro-Raman spectroscopy in a cross section of the thick film. The D X-0(A) line with the FWHM of 5.1 meV and etch- pit density of 9 x 10(6) cm(-2) illustrated high crystalline quality of the thick GaN epitaxial layer. Optically active regions appeared above the SiO2 masks and disappeared abruptly due to the tapered inversion domains at 210 - 230 mu m thickness. The crystalline quality was improved by increasing the thickness of the GaN/sapphire interface, but the region with a distance of 2 mu m from the top surface revealed relatively low quality due to degenerate surface reconstruction by residual gas reaction. The x-ray rocking curve for the symmetric (0 0 2) and asymmetric (1 0 2) reflections also showed good quality and a small wing tilt of the epitaxial lateral overgrowth (ELO) GaN.

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The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity.