Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN
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2010
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| Resumo |
The optical quenching of photoconductivity under dual illumination in GaN samples with different resistivity is investigated to reveal the variation of deep levels. The samples are grown by metal organic chemical vapour deposition without intentional doping. Quenching bands centered at 1.35 eV, 1.55 eV, 1.98 eV, and 2.60 eV are observed. It is found that the 1.98 eV quenching band is dominated in all the samples and the 2.60 eV band is observed only in the high-resistivity samples. The possible defect levels responsible for the quenching bands and the origin of different quenching behaviour at 2.60 eV are discussed. It is suggested that the defect level responsible for quenching at 2.60 eV plays an important role for the enhancement of resistivity. Submitted by 阎军 (yanj@red.semi.ac.cn) on 2010-05-24T06:12:17Z No. of bitstreams: 1 Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (MD5) Approved for entry into archive by 阎军(yanj@red.semi.ac.cn) on 2010-05-24T07:16:49Z (GMT) No. of bitstreams: 1 Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (MD5) Made available in DSpace on 2010-05-24T07:16:49Z (GMT). No. of bitstreams: 1 Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.pdf: 458168 bytes, checksum: 7011fa935fabd2cf08e8a2fea18b2c99 (MD5) Previous issue date: 2010 Chinese Academy of Sciences YYYJ-0701-02 IS-CAS2008T01 ISCAS2009L01 ISCAS2009L02 其它 Chinese Academy of Sciences YYYJ-0701-02 IS-CAS2008T01 ISCAS2009L01 ISCAS2009L02 |
| Identificador | |
| Idioma(s) |
英语 |
| Fonte |
Hou QF (Hou Qi-Feng), Wang XL (Wang Xiao-Liang), Xiao, HL (Xiao Hong-Ling), Wang CM (Wang Cui-Mei), Yang CB (Yang Cui-Bai), Li JM (Li Jin-Min).Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN.CHINESE PHYSICS LETTERS,2010,27(5):Art. No. 057104 |
| Palavras-Chave | #半导体材料 #N-TYPE GAN #DEEP LEVELS #SELENIDE #DEFECTS |
| Tipo |
期刊论文 |
