992 resultados para Ak-509


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A new class of bio-composite polymer electrolyte membranes comprising chitosan (CS) and certain biomolecules in particular, plant hormones such as 3-indole acetic acid (IAA), 4-chlorophenoxy acetic acid (CAA) and 1-naphthalene acetic acid (NAA) are explored to realize proton-conducting bio-composite membranes for application in direct methanol fuel cells (DMFCs). The sorption capability, proton conductivity and ion-exchange capacity of the membranes are characterized in conjunction with their thermal and mechanical behaviour. A novel approach to measure the permeability of the membranes to both water and methanol is also reported, employing NMR imaging and volume localized NMR spectroscopy, using a two compartment permeability cell. A DMFC using CS-IAA composite membrane, operating with 2M aqueous methanol and air at 70 degrees C delivers a peak power density of 25 mW/cm(2) at a load current density of 150 mA/cm(2). The study opens up the use of bio-compatible membranes in polymer-electrolyte-membrane fuel cells. (C) 2011 The Electrochemical Society. [DOI: 10.1149/2.030111jes] All rights reserved.

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Functionalized multiwalled carbon nanotubes (CNTs) are coated with a 4-5 nm thin layer of V(2)O(5) by controlled hydrolysis of vanadium alkoxide. The resulting V(2)O(5)/CNT composite has been investigated for electrochemical activity with lithium ion, and the capacity value shows both faradaic and capacitive (nonfaradaic) contributions. At high rate (1 C), the capacitive behavior dominates the intercalation as 2/3 of the overall capacity value out of 2700 C/g is capacitive, while the remaining is due to Li-ion intercalation. These numbers are in agreement with the Trasatti plots and are corroborated by X-ray photoelectron spectroscopy (XPS) studies on the V(2)O(5)/CNTs electrode, which show 85% of vanadium in the +4 oxidation state after the discharge at 1 C rate. The cumulative high-capacity value is attributed to the unique property of the nano V(2)O(5)/CNTs composite, which provides a short diffusion path for Lit-ions and an easy access to vanadium redox centers besides the high conductivity of CNTs. The composite architecture exhibits both high power density and high energy density, stressing the benefits of using carbon substrates to design high performance supercapacitor electrodes.

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We report a Raman study of single crystal pyrochlore Er(2)Ti(2)O(7) as a function of temperature from 12 to 300 K. In addition to the phonons, various photoluminescence (PL) lines of Er(3+) in the visible range are also observed. Our Raman data show an anomalous red-shift of two phonons (one at similar to 200 cm(-1) and another at similar to 520 cm(-1)) upon cooling from room temperature which is attributed to phonon-phonon anharmonic interactions. However, the phonons at similar to 310, 330, and 690 cm(-1) initially show a blue-shift upon cooling from room temperature down to about 130 K, followed by a red-shift, indicating a structural deformation at similar to 130 K. The intensities of the PL bands associated with the transitions between the various levels of the ground state manifold ((4)I(15/2)) and the (2)H(11/2) as well as (4)S(3/2) excited state manifolds of Er(3+) show a change at similar to 130 K. Moreover, the temperature dependence of the peak position of the two PL bands shows a change in their slope (d(omega)/d(T)) at similar to 130 K, thus further strengthening the proposal of a structural deformation. The temperature dependence of the peak positions of the PL bands has been analyzed using the theory of optical dephasing in crystals.

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Two solid state galvanic cells:Pt, Ni + Ni2Si04 + Si02/(Y203)Zr02/Ni + + NiO, Pt (1) and Pt, Ni + NizSiOj + Si02/CaF2/Ni + + NiO, Pt (11) have been employed for the determination of the Gibbs' energy of formation of nickel orthosilicate(Ni2Si04) from nickel oxide and quartz. The emf of cell (I) was reversible and reproducible in the temperature range 925 to 1375K whereas emf of cell (11) drifted with time and changed polarity. From the results of cell (I), the Gibbs' energy of formation of nickel silicate is obtained as,2Ni0 (r.s.) + Si02 (quartz) + Ni2Si04 (olivine)Gibbs' energy of formation of the spinel form of Ni2Si04 is obtained by combining the data for olivine obtained in this study with high pressure data on olivine to spinel transition reported in the literature. The complex time dependence of the emf of cell (11) can be rationalised on the basis of formation of calcium silicates from calcium oxide, generally present as an impurity in the calcium fluoride electrolyte, and silica. The emf of cell (11) is shown to be the function of the activity of calcium oxide at the electrolyte/ electrode interface. The results provide strong evidence against the recent suggestion of mixed anionic conduction in calcium fluoride.

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The effect of an applied electric field on the magnetic properties of L1(0)-ordered CoPd thin films is investigated by first-principle calculations. Both the magnetic moment and the magnetocrystalline anisotropy of the surface atoms are changed by the electric field, but the net effect depends on the surface termination. The magnetocrystalline anisotropy switches from in-plane to perpendicular in the presence of external electric field. Typical magnetic-moment changes are 0.1 mu(B) per eV/angstrom The main mechanism is the shift of the Fermi level, but the anisotropy change also reflects a crystal-field change due to incomplete screening.

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The Gibbs' energy offormation of the intermetallic compound URh3has been measured in the temperature range 980 to 1320 K using an oxide solid state cell incorporating yttria-doped thoria as the solid electrolyte and a mixture of manganese and manganese oxide as the reference electrode. The cell can be represented as Pt, Mn + MnO I (Y203)Th02 I Rh + URh3 + U02 + x' Rh, Pt The reversible emf of the cell was a linear function of temperature E = 15.60 +0.0237 T (±0.8) mY. Using auxiliary thermodynamic data for MnO and U02+ x the Gibbs' energy of formation of URh3 from component metals has been computed. The results can be expressed by the equation L'.G?< URh3 > = -316240 + 13.22 T (± 3000) J mol-1. The "third-law" enthalpy of formation of URh3at 298 K is -293.2 (± 4) kJ mol-1, significantly more negative than the value of -181.5 kJ mol-1 calculated using Miedema's model.

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The tie lines between (CoXMg1−X)O solid solution with rock salt structure and orthosilicate solid solution (CoYMg1−Y)-Si0.5O2, and between orthosilicate and metasilicate (CoZMg1-Z)SiO3 crystalline solutions, have been determined experimentally at 1373 K. The compositions of coexisting phases have been determined by electron probe microanalysis (EPMA) and lattice parameter measurement on equilibrated samples. The metasilicate solid solution exists only for 0 > Z > 0.213. The activity of CoO in the rock salt solid solution was determined as a function of composition and temperature in the range of 1023 to 1373 K using a solid-state galvanic cell: Pt, (CoXMg1−X)O+Co|(Y2O3)ZrO2|Co+CoO, Pt The free energy of mixing of (CoXMg1−X)O crystalline solution can be expressed by the equation ΔGE=X(1 −X)[(6048 − 2.146T)X+ (8745 − 3.09T)(1 −X)] J·mol−1 The thermodynamic data for the rock salt phase is combined with information on interphase partitioning of Co and Mg to generate the mixing properties for the ortho- and metasilicate solid solutions. For the orthosilicate solution (CoYMg1 −Y)Si0.5O2 at 1373 K, the excess Gibbs free energy of mixing is given by the relation ΔGE=Y(1 −Y)[2805Y+ 3261(1 −Y)] J·mol−1 For the metasilicate solution (CoZMg1 −Z)SiO3 at the same temperature, the excess free energy can be expressed by the relation ΔGE=Z(1 −Z)[2570Z+ 3627(1 −Z)] J·mol−1

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Scanning tunneling microscopy was used to study the surface nanostructure of the epitaxial film Nd2/3Sr1/3MnO3 that shows giant magnetoresistance. The surface morphology of the film consists of a number of overlapping platelets of about 30–35 Å diameter that grow at an angle of 35°–45° to the surface normal. The peak to peak height of the platelets are multiples of the c‐axis lattice parameter of 7.85 Å showing that the growth of the platelets takes place by the layer by layer addition of one formula unit. The mean surface roughness is about 10 Å. In the range of a few microns the film exhibits no defects or dislocations. The film is unstable in ambient atmosphere and tends to get covered by an adsorbate layer. Tip‐surface interactions cause the adsorbate to be dislodged exposing the surface nanostructure. The degradation of the film in real time when imaged in air was recorded. The adsorbates increase the surface roughness of the film.

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We have studied the isothermal, magnetic field (H‖c) dependent rf power P(H) dissipation (Hrf‖a) in the superconducting state of Bi2Sr2CaCu2O8 single crystals prior to and after irradiation with 250 MeV 107Ag17+ ions. In the pristine state, P(H) shows an initial decrease with increase in field, reaches a minimum at HM(T) and increases monotonically for H>HM(T). This behavior arises when the electromagnetic coupling between the pancake vortices in adjacent CuO layers becomes dominant on increasing the field and minimizes the distortions of the flux lines by confining the 2D vortices. In the post irradiated state, such an initial decrease and the minimum in P(H) is not observed but only a much reduced rf dissipation that monotonically increases with field from H = 0 onwards is seen. We attribute this difference to the strong enhancement of the tilt modulus C44 of the flux lines on irradiation when the pancake vortices in adjacent CuO bilayers are pinned along the track forming a well-stacked flux line in the field direction (‖c). We have also observed that the rf dissipation disappears at a certain temperature Tsf, at which the normal core of the flux line becomes commensurate with the columnar track diameter.

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We have studied the magnetic field (H∥c) dependent rf dissipation (Hrf∥a) in an as-grown Bi2Sr2CaCu2O8 single crystal prior to and after irradiation with 250 MeV 107Ag17+ ions. In a comparison of the responses from the as-grown crystal with an air-annealed crystal, features due to oxygen deficient regions acting as weak links in the former are identified. These features disappear immediately after irradiation of the as-grown crystal. We attribute such behavior to the displacement of oxygen from columnar tracks to deficient regions thus eliminating the weak links. Losses from the same irradiated as-grown crystal stored at 300 K for 60 days show that the features similar but not identical to those observed in the pristine state have reappeared implying that the displaced oxygen is in a metastable configuration in the deficient regions and hence is mobile due to thermal effects even at 300 K.

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Effect of particle size on the electron transport and magnetic properties of La0.7Ca0.3MnO3 has been investigated. While the ferromagnetic Tc, low field magnetic susceptibility, and insulator‐metal transition are markedly affected by the particle size, the maximum magnetoresistance exhibited by the samples near Tc is not sensitive to the particle size. However, the magnetoresistance at 4.2 K increases with decrease in particle size, suggesting a substantial contribution by the grain boundaries. Preliminary measurements on La0.7Sr0.3MnO3 samples of different particle sizes also corroborate the above conclusions.

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Electron paramagnetic resonance studies under ambient conditions of boron‐doped porous silicon show anisotropic Zeeman (g) and hyperfine (A) tensors, signaling localization of the charge carriers due to quantum confinement.

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We report the effect of surface treatments on the dynamic conductance curves (G=dI/dV‐V) of Au‐Bi2Sr2CaCu2O8+δ (single crystal) point contact junctions of variable junction conductances (100 mS≳G≳100 μS). We find that if the crystal surface is cleaved freshly just prior to making contacts, all irreproducible sharp multiple features often observed in tunneling data of Bi(2212) oxide superconductors disappear. If the cleaved crystal surfaces are left under ambient conditions for a few days and the tunneling experiments are repeated, these multiple features reappear. We also find that if the current in the junction is made to pass predominantly through the bulk (and not along the surface), gap features are sharper. The observed conductance curves are fitted to a modified model [G. E. Blonder et al., Phys. Rev. B 25, 4515 (1982)] and estimated gap values are Δ≂28 to 30 meV corresponding to the ratio 2Δ/kBTc ≂ 7.5 with lifetime broadening Γ/Δ≂0.2. We conclude that the sharp multiple features observed in Bi(2212) tunneling curves has no intrinsic origin in the bulk and they arise from the surface only.

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Software transactional memory (STM) has been proposed as a promising programming paradigm for shared memory multi-threaded programs as an alternative to conventional lock based synchronization primitives. Typical STM implementations employ a conflict detection scheme, which works with uniform access granularity, tracking shared data accesses either at word/cache line or at object level. It is well known that a single fixed access tracking granularity cannot meet the conflicting goals of reducing false conflicts without impacting concurrency adversely. A fine grained granularity while improving concurrency can have an adverse impact on performance due to lock aliasing, lock validation overheads, and additional cache pressure. On the other hand, a coarse grained granularity can impact performance due to reduced concurrency. Thus, in general, a fixed or uniform granularity access tracking (UGAT) scheme is application-unaware and rarely matches the access patterns of individual application or parts of an application, leading to sub-optimal performance for different parts of the application(s). In order to mitigate the disadvantages associated with UGAT scheme, we propose a Variable Granularity Access Tracking (VGAT) scheme in this paper. We propose a compiler based approach wherein the compiler uses inter-procedural whole program static analysis to select the access tracking granularity for different shared data structures of the application based on the application's data access pattern. We describe our prototype VGAT scheme, using TL2 as our STM implementation. Our experimental results reveal that VGAT-STM scheme can improve the application performance of STAMP benchmarks from 1.87% to up to 21.2%.