A comparative study of superconducting LaBa2Cu3O7−δ and La3−xBa3+xCu6O14+δ

Based on X-ray diffraction and electron microscopy it is shown that oxides of the general formula La Ba2Cu3O7−δ become tetragonal when δ deviates slightly from 0. This tetragonal structure is similar to that of La3−xBa3+xCu6O14+δ, with a cubic perovskite subcell and triple periodicity. Electron micrographs of these tetragonal oxides show 90° microdomains. Orthorhombic LaBa2Cu3O7−δ with high Tc (not, vert, similar77 K) is found only when δ reverse similar, equals 0; this sample is subject to formation of twins. Fluorine substitution seems to favor superconductivity.

Al/SiC carriers for microwave integrated circuits by a new technique of pressureless infiltration

Materials with high thermal conductivity and thermal expansion coefficient matching with that of Si or GaAs are being used for packaging high density microcircuits due to their ability of faster heat dissipation. Al/SiC is gaining wide acceptance as electronic packaging material due to the fact that its thermal expansion coefficient can be tailored to match with that of Si or GaAs by varying the Al:SiC ratio while maintaining the thermal conductivity more or less the same. In the present work, Al/SiC microwave integrated circuit (MIC) carriers have been fabricated by pressureless infiltration of Al-alloy into porous SiC preforms in air. This new technique provides a cheaper alternative to pressure infiltration or pressureless infiltration in nitrogen in producing Al/SiC composites for electronic packaging applications. Al-alloy/65vol% SiC composite exhibited a coefficient of thermal expansion of 7 x 10(-6) K-1 (25 degrees C-100 degrees C) and a thermal conductivity of 147 Wm(-1) K-1 at 30 degrees C. The hysteresis observed in thermal expansion coefficient of the composite in the temperature range 100 degrees C-400 degrees C has been attributed to the presence of thermal residual stresses in the composite. Thermal diffusivity of the composite measured over the temperature range from 30 degrees C to 400 degrees C showed a 55% decrease in thermal diffusivity with temperature. Such a large decrease in thermal diffusivity with temperature could be due to the presence of micropores, microcracks, and decohesion of the Al/SiC interfaces in the microstructure (all formed during cooling from the processing temperature). The carrier showed satisfactory performance after integrating it into a MIC.

Lack of Cu3+, Pb4+, and Bi5+ ions in metallic and superconducting oxides

With a view to understand the oxidation states of metal ions involved in oxide superconductors, oxidation behavior of Cu, Pb, and Bi metals have been studiedi employing x-ray-photoemission and ultraviolet-photoemission spectroscopy. Pb and Bi have distinct 6p (0 to 4 eV) and 6s (7.5 to 10 eV) bands and upon oxidation, only the 6p electrons are ionized forming PbO and Bi2O3 with the simultaneous development of the O2-(2p) band (3 to 7 eV). We show that the 6s band of metals lies below the O2-(2p) band, and hence 6s electrons cannot be ionized to form Pb4+ and Bi4+ as expected in PbO2, BaPbO3, BaBiO3, and BaPb0.75Bi0.25O3. Instead these oxides are stabilized with lower valent O22- along with O2- ions with metals remaining in +2 and +3 states. Similarly, it is shown that the Cu2+(3d) band overlaps with the O2-(2p) band in the YBa2Cu3O6.95 completely and the excess oxygen can be stabilized through lower valent oxide ions instead of Cu3+.

Nature of the copper species in superconducting YBa2Cu3O7

The nominal composition of YBa2Cu3O7 oxide suggests that 33% of the copper should be in the 3+ state. In structural studies3–5, Cu3+ and Cu2+ ions have been assigned specific sites based on their preferred coordinations, and many of the models of superconductivity also require the presence of Cu3+. Our studies however show that Cu is present only in the Cu1+ and Cu2+ states, the proportion of the former increasing with decreasing temperature. It appears that there is no clear experimental evidence for the presence of Cu3+ in YBa2Cu3O7.

Superconducting Y--Ba--Cu--O Thin Films by RF Sputtering

Thin films of Y--Ba--Cu--O have been prepared by conventional methods of RF sputtering. The films exhibit superconducting onset temperatures as high as 91K, midpoint at 80K and a zero resistance state at 35K. Critical current measurements implied critical current densities of the order of 31 A/cm exp 2 . An attempt has been made to establish the role of substrate and various deposition parameters. 7 ref.--AA.

Impact of energy quantisation in single electron transistor island on hybrid complementary metal oxide semiconductor-single electron transistor integrated circuits

For the first time, the impact of energy quantisation in single electron transistor (SET) island on the performance of hybrid complementary metal oxide semiconductor (CMOS)-SET transistor circuits has been studied. It has been shown through simple analytical models that energy quantisation primarily increases the Coulomb Blockade area and Coulomb Blockade oscillation periodicity of the SET device and thus influences the performance of hybrid CMOS-SET circuits. A novel computer aided design (CAD) framework has been developed for hybrid CMOS-SET co-simulation, which uses Monte Carlo (MC) simulator for SET devices along with conventional SPICE for metal oxide semiconductor devices. Using this co-simulation framework, the effects of energy quantisation have been studied for some hybrid circuits, namely, SETMOS, multiband voltage filter and multiple valued logic circuits. Although energy quantisation immensely deteriorates the performance of the hybrid circuits, it has been shown that the performance degradation because of energy quantisation can be compensated by properly tuning the bias current of the current-biased SET devices within the hybrid CMOS-SET circuits. Although this study is primarily done by exhaustive MC simulation, effort has also been put to develop first-order compact model for SET that includes energy quantisation effects. Finally, it has been demonstrated that one can predict the SET behaviour under energy quantisation with reasonable accuracy by slightly modifying the existing SET compact models that are valid for metallic devices having continuous energy states.

Disorder-driven electronic localization and phase separation in superconducting Fe1+yTe0.5Se0.5 single crystals

We have investigated the influence of Fe excess on the electrical transport and magnetism of Fe1+yTe0.5Se0.5 (y=0.04 and 0.09) single crystals. Both compositions exhibit resistively determined superconducting transitions (T-c) with an onset temperature of about 15 K. From the width of the superconducting transition and the magnitude of the lower critical field H-c1, it is inferred that excess of Fe suppresses superconductivity. The linear and nonlinear responses of the ac susceptibility show that the superconducting state for these compositions is inhomogeneous. A possible origin of this phase separation is a magnetic coupling between Fe excess occupying interstitial sites in the chalcogen planes and those in the Fe-square lattice. The temperature derivative of the resistivity d(rho)/d(T) in the temperature range T-c < T < T-a with T-a being the temperature of a magnetic anomaly, changes from positive to negative with increasing Fe. A log 1/T divergence of the resistivity above T-c in the sample with higher amount of Fe suggests a disorder-driven electronic localization.

Gas Sensing Characteristics of Superconducting Cuprates

Gas sensing characteristics of YBa2Cu3O7−δ, La2−x SrxCuO4, and Bi2Y1−xCaxSr2Cu2O8 have been examined. La2−x SrxCuO4 (x = 0.075), and Bi2YSr2Cu2O8 are found to show good sensitivity (≈10 ppm) to ethyl alcohol and such vapours.

Relation between Tc and hole concentration in superconducting cuprates

The superconducting transition temperature, Tc, of several series of cuprates shows a nonlinear dependence on the hole concentration, nh, determined by chemical titrations. The tc becomes maximum when nh is in the 0.12-0.15 range in cuprates containing a single Cu-O layer and around 0.2 in cuprates containing two Cu-O layers.

Structure and superconducting properties of Tl1?yPbyY1?xCaxSr2Cu2O7star, open: Dependence of Tc on hole concentration

Structure and superconducting properties of Tl1?yPbyY1?xCaxSr2Cu2O7 (y=0.0, 0.1, 0.25 and 0.5) , derived from the parent insulator TlYSr2Cu2O7, have been investigated for different values of x. XANES studies show Pb to be in the 4+ state while Tl is in the 3+ state, suggesting thereby that in this series, (x?y) approximately corresponds to the hole concentration. The in-plane Cu---O distance decreases with increase in x for all values of y. The apical Cu---O distance as well as the Tl(Pb)---O(2) distance show anomalies at x=0.5 in the series with y=0.25; at this composition, Tc also reaches a maximum. In general, the composition (value of x) at which the Tc of Tl1?yPbyY1?xCaxSr2Cu2O7 reaches a maximum depends on the Pb content and the maximum Tc itself increases with increase in y, reaching a value of 105 K at y=0.5. More interestingly, a maximum Tc occurs at an (x?y) value of not, vert, similar0.25, which is close to the hole concentration at maximum Tc in other cuprate superconductors containing two CuO2 layers.

Superconducting gap in Nb seen by point contact spectroscopy

The nonlinear current voltage characteristics of a point contact convey information about various excitations in the metal. We have made a poin~ contact study on a superconductor to see the band gap and on a normal metal to see Ihe transport characteristics.

Occurrence of maximum Tc at an optimal carrier concentration in superconducting bismuth and thallium cuprates

The superconducting transition temperatures in Bi2Ca1−xLnxSr2Cu2O8+δ, TlCa1−xLnxSr2Cu2O6+δ, and Tl0.8Ca1−xLnxBa2Cu23O6+δ (Ln=Y or rare earth) vary with composition and show a maximum at a specific value of x or δ. This observation suggests that an optimal carrier concentration is required to attain maximum Tc in such cuprates which seem to be two‐band systems

Comparison of the effect of processing parameters and degradation on the DC and microwave properties of thin films and polycrystalline bulk high-Tc superconducting materials

The sharp increase in microwave power loss (the reverse of what has previously been reported) at the transition temperature in high-Tc superconducting systems such as YBaCu oxide (polycrystalline bulk and thin films obtained by the laser ablation technique) and BiPbSrCaCu oxide is reported. The differences between DC resistivity ( rho ) and the microwave power loss (related to microwave surface resistance) are analysed from the data obtained by a simultaneous measurement set-up. The influence of various parameters, such as preparation conditions, thickness and aging of the sample and the probing frequency (6-18 GHz), on the variation of microwave power loss with temperature is outlined.

Effect of tolerance on the propagation characteristic of a superconducting thin film microstrip delay line

The propagation constant of a superconducting microstrip transmission delay line is evaluated using the spectral domain immitance approach, modelling the superconductor as a surface current having an equivalent surface impedance found through the complex resistive boundary condition. The sensitivity approach is used to study the beta variations with substrate parameters and film characteristics. Results show that the surface impedance does not have much influence on beta sensitivities with respect to epsilon r, W and h. However, it can be observed that the surface impedance plays a crucial role in determining the optimum design.