Room temperature absorption in laterally biased Quantum Infrared Detectors fabricated by MBE regrowth

In this paper, we show room temperature operation of a quantum well infrared photodetector (QWIP) using lateral conduction through ohmic contacts deposited at both sides of two n-doped quantum wells. To reduce the dark current due to direct conduction in the wells, we apply an electric field between the quantum wells and two pinch-off Schottky gates, in a fashion similar to a field effect device. Since the normal incidence absorption is strongly reduced in intersubband transitions in quantum wells, we first analyze the response of a detector based on quantum dots (QD). This QD device shows photocurrent signal up to 150 K when it is processed in conventional vertical detector. However, it is possible to observe room temperature signal when it is processed in a lateral structure. Finally, the room temperature photoresponse of the QWIP is demonstrated, and compared with theory. An excellent agreement between the estimated and measured characteristics of the device is found

Dispersive optical bistability in quantum wells with logarithmic gain

We present an analytical model for studying optical bistability in semiconductor lasers that exhibit a logarithmic dependence of the optical gain on carrier concentration. Model results are shown for a Fabry–Pérot quantum-well laser and compared with the predictions of a commercial computer-aided design (CAD) software tool.

An iterative method based on boundary integrals for elliptic Cauchy problems in semi-infinite domains

In this study, we investigate the problem of reconstruction of a stationary temperature field from given temperature and heat flux on a part of the boundary of a semi-infinite region containing an inclusion. This situation can be modelled as a Cauchy problem for the Laplace operator and it is an ill-posed problem in the sense of Hadamard. We propose and investigate a Landweber-Fridman type iterative method, which preserve the (stationary) heat operator, for the stable reconstruction of the temperature field on the boundary of the inclusion. In each iteration step, mixed boundary value problems for the Laplace operator are solved in the semi-infinite region. Well-posedness of these problems is investigated and convergence of the procedures is discussed. For the numerical implementation of these mixed problems an efficient boundary integral method is proposed which is based on the indirect variant of the boundary integral approach. Using this approach the mixed problems are reduced to integral equations over the (bounded) boundary of the inclusion. Numerical examples are included showing that stable and accurate reconstructions of the temperature field on the boundary of the inclusion can be obtained also in the case of noisy data. These results are compared with those obtained with the alternating iterative method.

Investigation of generation -recombination noise and related processes in aluminum gallium arsenide TEGFETs and Hall structures with quantum wells

Experimental and theoretical studies regarding noise processes in various kinds of AlGaAs/GaAs heterostructures with a quantum well are reported. The measurement processes, involving a Fast Fourier Transform and analog wave analyzer in the frequency range from 10 Hz to 1 MHz, a computerized data storage and processing system, and cryostat in the temperature range from 78 K to 300 K are described in detail. The current noise spectra are obtained with the “three-point method”, using a Quan-Tech and avalanche noise source for calibration. ^ The properties of both GaAs and AlGaAs materials and field effect transistors, based on the two-dimensional electron gas in the interface quantum well, are discussed. Extensive measurements are performed in three types of heterostructures, viz., Hall structures with a large spacer layer, modulation-doped non-gated FETs, and more standard gated FETs; all structures are grown by MBE techniques. ^ The Hall structures show Lorentzian generation-recombination noise spectra with near temperature independent relaxation times. This noise is attributed to g-r processes in the 2D electron gas. For the TEGFET structures, we observe several Lorentzian g-r noise components which have strongly temperature dependent relaxation times. This noise is attributed to trapping processes in the doped AlGaAs layer. The trap level energies are determined from an Arrhenius plot of log (τT2) versus 1/T as well as from the plateau values. The theory to interpret these measurements and to extract the defect level data is reviewed and further developed. Good agreement with the data is found for all reported devices. ^

MOVPE growth and characterization of Al(Ga)N and InAlN/AlGaN quantum wells for UV LED applications

The study of III-nitride materials (InN, GaN and AlN) gained huge research momentum after breakthroughs in the production light emitting diodes (LEDs) and laser diodes (LDs) over the past two decades. Last year, the Nobel Prize in Physics was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura for inventing a new energy efficient and environmental friendly light source: blue light-emitting diode (LED) from III-nitride semiconductors in the early 1990s. Nowadays, III-nitride materials not only play an increasingly important role in the lighting technology, but also become prospective candidates in other areas, for example, the high frequency (RF) high electron mobility transistor (HEMT) and photovoltaics. These devices require the growth of high quality III-nitride films, which can be prepared using metal organic vapour phase epitaxy (MOVPE). The main aim of my thesis is to study and develop the growth of III-nitride films, including AlN, u-AlGaN, Si-doped AlGaN, and InAlN, serving as sample wafers for fabrication of ultraviolet (UV) LEDs, in order to replace the conventional bulky, expensive and environmentally harmful mercury lamp as new UV light sources. For application to UV LEDs, reducing the threading dislocation density (TDD) in AlN epilayers on sapphire substrates is a key parameter for achieving high-efficiency AlGaNbased UV emitters. In Chapter 4, after careful and systematic optimisation， a working set of conditions, the screw and edge type dislocation density in the AlN were reduced to around 2.2×108 cm-2 and 1.3×109 cm-2 , respectively, using an optimized three-step process, as estimated by TEM. An atomically smooth surface with an RMS roughness of around 0.3 nm achieved over 5×5 µm 2 AFM scale. Furthermore, the motion of the steps in a one dimension model has been proposed to describe surface morphology evolution, especially the step bunching feature found under non-optimal conditions. In Chapter 5, control of alloy composition and the maintenance of compositional uniformity across a growing epilayer surface were demonstrated for the development of u-AlGaN epilayers. Optimized conditions (i.e. a high growth temperature of 1245 °C) produced uniform and smooth film with a low RMS roughness of around 2 nm achieved in 20×20 µm 2 AFM scan. The dopant that is most commonly used to obtain n-type conductivity in AlxGa1-xN is Si. However, the incorporation of Si has been found to increase the strain relaxation and promote unintentional incorporation of other impurities (O and C) during Si-doped AlGaN growth. In Chapter 6, reducing edge-type TDs is observed to be an effective appoach to improve the electric and optical properties of Si-doped AlGaN epilayers. In addition, the maximum electron concentration of 1.3×1019 cm-3 and 6.4×1018 cm-3 were achieved in Si-doped Al0.48Ga0.52N and Al0.6Ga0.4N epilayers as measured using Hall effect. Finally, in Chapter 7, studies on the growth of InAlN/AlGaN multiple quantum well (MQW) structures were performed, and exposing InAlN QW to a higher temperature during the ramp to the growth temperature of AlGaN barrier (around 1100 °C) will suffer a significant indium (In) desorption. To overcome this issue, quasi-two-tempeature (Q2T) technique was applied to protect InAlN QW. After optimization, an intense UV emission from MQWs has been observed in the UV spectral range from 320 to 350 nm measured by room temperature photoluminescence.

Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

Les antimoniures sont des semi-conducteurs III-V prometteurs pour le développement de dispositifs optoélectroniques puisqu'ils ont une grande mobilité d'électrons, une large gamme spectrale d'émission ou de détection et offrent la possibilité de former des hétérostructures confinées dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui émet ou détecte à une certaine longueur d'onde, les détails, à savoir comment sont déterminés les compositions et surtout les alignements de bande, sont rarement explicites. Très peu d'études fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tétramères lors de l'épitaxie par jets moléculaires existent, et les méthodes afin de déterminer l'alignement des bandes des binaires qui composent ces alliages donnent des résultats variables. Un modèle a été construit et a permis de prédire l'alignement des bandes énergétiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modèle tient compte des effets thermiques, des contraintes élastiques et peut aussi inclure le confinement pour des puits quantiques. De cette manière, il est possible de prédire la transition de type de recombinaison en fonction de la composition. Il est aussi montré que l'indium ségrègue en surface lors de la croissance par épitaxie par jets moléculaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait déjà été observé pour ce type de matériau. Il est possible d'éliminer le gradient de composition à cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'épaisseur d'indium en surface dépend de la température et peut être évaluée par un modèle simple simulant la ségrégation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb où l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb à basse température immédiatement après la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des éléments III. L'arsenic, dont la source fournit principalement des tétramères, ne s'incorpore pas de la même manière. Les tétramères occupent deux sites en surface et doivent interagir par paire afin de créer des dimères d'arsenic. Ces derniers pourront alors être incorporés dans l'alliage. Un modèle de cinétique de surface a été élaboré afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce résultat s'explique par le fait que les réactions de deuxième ordre dans la décomposition des tétramères d'arsenic ralentissent considérablement la réaction d'incorporation et permettent à l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est préférable d'utiliser une source de dimères d'arsenic, plutôt que de tétramères, afin de mieux contrôler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont été fabriqués et caractérisés optiquement afin d'observer le passage de recombinaison de type I à type II. Cependant, celui-ci n'a pas pu être observé puisque les spectres étaient dominés par un niveau énergétique dans le GaSb dont la source n'a pu être identifiée. Un problème dans la source de gallium pourrait être à l'origine de ce défaut et la résolution de ce problème est essentielle à la continuité de ces travaux.

Role of substrate quality on the performance of semipolar (11 2 - 2) InGaN light-emitting diodes

We compare the optical properties and device performance of unpackaged InGaN/GaN multiple-quantum-well light-emitting diodes (LEDs) emitting at ∼430 nm grown simultaneously on a high-cost small-size bulk semipolar (11 2 - 2) GaN substrate (Bulk-GaN) and a low-cost large-size (11 2 - 2) GaN template created on patterned (10 1 - 2) r-plane sapphire substrate (PSS-GaN). The Bulk-GaN substrate has the threading dislocation density (TDD) of ∼ and basal-plane stacking fault (BSF) density of 0 cm-1, while the PSS-GaN substrate has the TDD of ∼2 × 108cm-2 and BSF density of ∼1 × 103cm-1. Despite an enhanced light extraction efficiency, the LED grown on PSS-GaN has two-times lower internal quantum efficiency than the LED grown on Bulk-GaN as determined by photoluminescence measurements. The LED grown on PSS-GaN substrate also has about two-times lower output power compared to the LED grown on Bulk-GaN substrate. This lower output power was attributed to the higher TDD and BSF density.

Optical properties of semiconductor quantum wires

This thesis presents theoretical investigations of the sub band structure and optical properties of semiconductor quantum wires. For the subband structure, we employ multiband effective-mass theory and the effective bond-orbital model both of which fully account for the band mixing and material anisotropy. We also treat the structure geometry in detail taking account of such effects as the compositional grading across material interfaces. Based on the subband structure, we calculate optical properties of quantum-wire structures. A recuring theme is the cross-over from one- to ~wo-dimensional behavior in these structures. This complicated behavior procludes the application of simple theoretical models to obtain the electronic structure. In particular, we calculate laser properties of quantum wires grown in V-grooves and find enhanced performance compared with quantum-well lasers. We also investigate optical anisotropy in quantum-wire arrays and propose an electro-optic device based on such structures.

Comprendre et maîtriser le passage de type I à type II de puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur substrat de GaSb

Les antimoniures sont des semi-conducteurs III-V prometteurs pour le développement de dispositifs optoélectroniques puisqu'ils ont une grande mobilité d'électrons, une large gamme spectrale d'émission ou de détection et offrent la possibilité de former des hétérostructures confinées dont la recombinaison est de type I, II ou III. Bien qu'il existe plusieurs publications sur la fabrication de dispositifs utilisant un alliage d'In(x)Ga(1-x)As(y)Sb(1-y) qui émet ou détecte à une certaine longueur d'onde, les détails, à savoir comment sont déterminés les compositions et surtout les alignements de bande, sont rarement explicites. Très peu d'études fondamentales sur l'incorporation d'indium et d'arsenic sous forme de tétramères lors de l'épitaxie par jets moléculaires existent, et les méthodes afin de déterminer l'alignement des bandes des binaires qui composent ces alliages donnent des résultats variables. Un modèle a été construit et a permis de prédire l'alignement des bandes énergétiques des alliages d'In(x)Ga(1-x)As(y)Sb(1-y) avec celles du GaSb pour l'ensemble des compositions possibles. Ce modèle tient compte des effets thermiques, des contraintes élastiques et peut aussi inclure le confinement pour des puits quantiques. De cette manière, il est possible de prédire la transition de type de recombinaison en fonction de la composition. Il est aussi montré que l'indium ségrègue en surface lors de la croissance par épitaxie par jets moléculaires d'In(x)Ga(1-x)Sb sur GaSb, ce qui avait déjà été observé pour ce type de matériau. Il est possible d'éliminer le gradient de composition à cette interface en mouillant la surface d'indium avant la croissance de l'alliage. L'épaisseur d'indium en surface dépend de la température et peut être évaluée par un modèle simple simulant la ségrégation. Dans le cas d'un puits quantique, il y aura une seconde interface GaSb sur In(x)Ga(1-x)Sb où l'indium de surface ira s'incorporer. La croissance de quelques monocouches de GaSb à basse température immédiatement après la croissance de l'alliage permet d'incorporer rapidement ces atomes d'indium et de garder la seconde interface abrupte. Lorsque la composition d'indium ne change plus dans la couche, cette composition correspond au rapport de flux d'atomes d'indium sur celui des éléments III. L'arsenic, dont la source fournit principalement des tétramères, ne s'incorpore pas de la même manière. Les tétramères occupent deux sites en surface et doivent interagir par paire afin de créer des dimères d'arsenic. Ces derniers pourront alors être incorporés dans l'alliage. Un modèle de cinétique de surface a été élaboré afin de rendre compte de la diminution d'incorporation d'arsenic en augmentant le rapport V/III pour une composition nominale d'arsenic fixe dans l'In(x)Ga(1-x)As(y)Sb(1-y). Ce résultat s'explique par le fait que les réactions de deuxième ordre dans la décomposition des tétramères d'arsenic ralentissent considérablement la réaction d'incorporation et permettent à l'antimoine d'occuper majoritairement la surface. Cette observation montre qu'il est préférable d'utiliser une source de dimères d'arsenic, plutôt que de tétramères, afin de mieux contrôler la composition d'arsenic dans la couche. Des puits quantiques d'In(x)Ga(1-x)As(y)Sb(1-y) sur GaSb ont été fabriqués et caractérisés optiquement afin d'observer le passage de recombinaison de type I à type II. Cependant, celui-ci n'a pas pu être observé puisque les spectres étaient dominés par un niveau énergétique dans le GaSb dont la source n'a pu être identifiée. Un problème dans la source de gallium pourrait être à l'origine de ce défaut et la résolution de ce problème est essentielle à la continuité de ces travaux.

Disorder driven transitions in non-equilibrium quantum systems

This thesis presents studies of the role of disorder in non-equilibrium quantum systems. The quantum states relevant to dynamics in these systems are very different from the ground state of the Hamiltonian. Two distinct systems are studied, (i) periodically driven Hamiltonians in two dimensions, and (ii) electrons in a one-dimensional lattice with power-law decaying hopping amplitudes. In the first system, the novel phases that are induced from the interplay of periodic driving, topology and disorder are studied. In the second system, the Anderson transition in all the eigenstates of the Hamiltonian are studied, as a function of the power-law exponent of the hopping amplitude.

In periodically driven systems the study focuses on the effect of disorder in the nature of the topology of the steady states. First, we investigate the robustness to disorder of Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are generated by resonantly driving a transition between the valence and conduction band. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator.

Interestingly, the effects of disorder are not necessarily adverse, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet Topological Anderson Insulator (FTAI). Such a state would be a dynamical realization of the topological Anderson insulator. We identify the conditions on the driving field necessary for observing such a transition. We realize such a disorder induced topological Floquet spectrum in the driven honeycomb lattice and quantum well models.

Finally, we show that two-dimensional periodically driven quantum systems with spatial disorder admit a unique topological phase, which we call the anomalous Floquet-Anderson insulator (AFAI). The AFAI is characterized by a quasienergy spectrum featuring chiral edge modes coexisting with a fully localized bulk. Such a spectrum is impossible for a time-independent, local Hamiltonian. These unique characteristics of the AFAI give rise to a new topologically protected nonequilibrium transport phenomenon: quantized, yet nonadiabatic, charge pumping. We identify the topological invariants that distinguish the AFAI from a trivial, fully localized phase, and show that the two phases are separated by a phase transition.

The thesis also present the study of disordered systems using Wegner's Flow equations. The Flow Equation Method was proposed as a technique for studying excited states in an interacting system in one dimension. We apply this method to a one-dimensional tight binding problem with power-law decaying hoppings. This model presents a transition as a function of the exponent of the decay. It is shown that the the entire phase diagram, i.e. the delocalized, critical and localized phases in these systems can be studied using this technique. Based on this technique, we develop a strong-bond renormalization group that procedure where we solve the Flow Equations iteratively. This renormalization group approach provides a new framework to study the transition in this system.

Evidence for zero-differential resistance states in electronic bilayers

We observe zero-differential resistance states at low temperatures and moderate direct currents in a bilayer electron system formed by a wide quantum well. Several regions of vanishing resistance evolve from the inverted peaks of magneto-intersubband oscillations as the current increases. The experiment, supported by a theoretical analysis, suggests that the origin of this phenomenon is based on instability of homogeneous current flow under conditions of negative differential resistivity, which leads to formation of current domains in our sample, similar to the case of single-layer systems.

Microwave Zero-Resistance States in a Bilayer Electron System

Magnetotransport measurements on a high-mobility electron bilayer system formed in a wide GaAs quantum well reveal vanishing dissipative resistance under continuous microwave irradiation. Profound zero-resistance states (ZRS) appear even in the presence of additional intersubband scattering of electrons. We study the dependence of photoresistance on frequency, microwave power, and temperature. Experimental results are compared with a theory demonstrating that the conditions for absolute negative resistivity correlate with the appearance of ZRS.

Transport in disordered two-dimensional topological insulators

The transport properties of the ""inverted"" semiconductor HgTe-based quantum well, recently shown to be a two-dimensional topological insulator, are studied experimentally in the diffusive regime. Nonlocal transport measurements are performed in the absence of magnetic field, and a large signal due to the edge states is observed. This shows that the edge states can propagate over a long distance, similar to 1 mm, and therefore, there is no difference between local and nonlocal electrical measurements in a topological insulator. In the presence of an in-plane magnetic field a strong decrease of the local resistance and complete suppression of the nonlocal resistance is observed. We attribute this behavior to an in-plane magnetic-field-induced transition from the topological insulator state to a conventional bulk metal state.

Interface roughness in short-period InGaAs/InP superlattices

Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.

Physical signatures of discontinuities of the time-dependent exchange-correlation potential

The exact exchange-correlation (XC) potential in time-dependent density-functional theory (TDDFT) is known to develop steps and discontinuities upon change of the particle number in spatially confined regions or isolated subsystems. We demonstrate that the self-interaction corrected adiabatic local-density approximation for the XC potential has this property, using the example of electron loss of a model quantum well system. We then study the influence of the XC potential discontinuity in a real-time simulation of a dissociation process of an asymmetric double quantum well system, and show that it dramatically affects the population of the resulting isolated single quantum wells. This indicates the importance of a proper account of the discontinuities in TDDFT descriptions of ionization, dissociation or charge transfer processes.