Interface roughness in short-period InGaAs/InP superlattices
Contribuinte(s) |
UNIVERSIDADE DE SÃO PAULO |
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Data(s) |
19/04/2012
19/04/2012
2008
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Resumo |
Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness. Brazilian agencies FAPESP CNPq Natural Sciences and Engineering Research Council of Canada (NSERC) |
Identificador |
APPLIED PHYSICS LETTERS, v.93, n.24, 2008 0003-6951 http://producao.usp.br/handle/BDPI/16477 10.1063/1.3050531 |
Idioma(s) |
eng |
Publicador |
AMER INST PHYSICS |
Relação |
Applied Physics Letters |
Direitos |
openAccess Copyright AMER INST PHYSICS |
Palavras-Chave | #electron mobility #gallium arsenide #III-V semiconductors #indium compounds #interface roughness #semiconductor superlattices #QUANTUM-WELL STRUCTURE #SCATTERING #EPITAXY #ALLOYS #Physics, Applied |
Tipo |
article original article publishedVersion |