Interface roughness in short-period InGaAs/InP superlattices


Autoria(s): Pusep, Yuri A.; GOZZO, G. C.; LAPIERRE, R. R.
Contribuinte(s)

UNIVERSIDADE DE SÃO PAULO

Data(s)

19/04/2012

19/04/2012

2008

Resumo

Electron mobility was studied in lattice-matched short-period InGaAs/InP superlattices as a function of the width of the wells. The decreasing mobility with decreasing well width was shown to occur due to the interface roughness. The roughnesses of InGaAs/InP and GaAs/AlGaAs interfaces were compared. Much smoother InGaAs/InP interfaces resulted in higher electron mobility limited by interface roughness.

Brazilian agencies FAPESP

CNPq

Natural Sciences and Engineering Research Council of Canada (NSERC)

Identificador

APPLIED PHYSICS LETTERS, v.93, n.24, 2008

0003-6951

http://producao.usp.br/handle/BDPI/16477

10.1063/1.3050531

http://dx.doi.org/10.1063/1.3050531

Idioma(s)

eng

Publicador

AMER INST PHYSICS

Relação

Applied Physics Letters

Direitos

openAccess

Copyright AMER INST PHYSICS

Palavras-Chave #electron mobility #gallium arsenide #III-V semiconductors #indium compounds #interface roughness #semiconductor superlattices #QUANTUM-WELL STRUCTURE #SCATTERING #EPITAXY #ALLOYS #Physics, Applied
Tipo

article

original article

publishedVersion