950 resultados para read-aloud
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基于能量最小近似模型,研究了应变异质结外延材料中,产生Frank-Read源以释放失配应力所需GeSi合金缓冲层的厚度。对Ge_xSi_(1-x)/Si进行了具体计算,其结果表明:产生Frank-Read源时缓冲层厚度要比临界厚度大得多,L_(min)=1300A是钉扎点间的最小距离。计算结果与LeGoues等的实验结果相符。就作者所知,计算产生Frank-Read源时GeSi合金缓冲层厚度的工作,以前未见报道。
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A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.
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We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.
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We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.
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Unlike alphabetic languages, Chinese language is ideographical writing system. Each Chinese character is single-syllable and usually has a direct meaning. So Chinese characters are a kind of valuable experimental material used for research on reading and comparisons of the reading mechanism of different language. In this paper, the normal persons and the patients with semantic dementia were respectively scheduled for two parts of experimental studies on the orthographic, phonologic, semantic and frequency effects of reading of Chinese characters. The Stroop-like character-picture interference experimental paradigm was used to investigate the orthographic, phonologic, semantic and frequency effects of Chinese characters on picture naming when they were presented with pictures to normal persons. The results indicated that the orthographic facilitation effect, phonologic facilitation effect, and semantic interference effect occurred at different SOA values. The orthographic and phonologic facilitation effects were independent. It was for the first time shown that the interaction between orthographic variable and semantic variable occurred when the high-frequency Chinese characters were read. Phonologic representation was activated quicker than semantic representation, by comparison of their SOA. Generally, it means that there is reading without meaning in Chinese character among the normal persons. The orthographic, phonologic, semantic, frequency and concrete effects of Chinese characters were further investigated among the dementia patients with DAT(dementia of Alzheimer's type disease) or CVA or both. They all have an impaired semantic memory. The results showed that patients with dementia could read the names of the pictures aloud while they could not name them or match them with a right character correctly. This is reading impairment without meaning in Chinese among the dementia patients. Meanwhile, they had a selective reading impairment and more LARC(a legitimate alternative reading of components) mistakes especially when reading low-frequency irregular, low-frequency inconsistent and abstract Chinese characters. With the patients' semantic impairment developed, their ability to read the pictures names would remain whereas their ability to read low-frequency irregular and low-frequency inconsistency Chinese characters was reduced. These results indicated that low-frequency irregular Chinese characters can be read correctly only when it is supported by their semantic information. Based on the above results of reading without meaning and of reading of low-frequency irregular Chinese characters supported by their semantic information, it is reasonable to suggest that at least two routes are involved in the process of reading Chinese characters. They are direct phonologic route and indirect semantic route; moreover, the two routes are independent.
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Fitzgerald, S., Simon, B., and Thomas, L. 2005. Strategies that students use to trace code: an analysis based in grounded theory. In Proceedings of the First international Workshop on Computing Education Research (Seattle, WA, USA, October 01 - 02, 2005). ICER '05. ACM, New York, NY, 69-80
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http://www.archive.org/details/memoirsandsermon00armsiala
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http://www.archive.org/details/islamandmissions012033mbp
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Tony Mann reviews: Owen Gingerich, The Book Nobody Read: In Pursuit of the Revolutions of Nicolaus Copernicus, Heinemann, 2004, 0-434-01315-3, £12.99.