Size effect of graphene on electrocatalytic activation of oxygen

Crystals of graphite nanosheets, achieved via a simple ball milling approach, show a significant size effect in electrocatalytic activation of oxygen.

Radiation-induced defects in quantum-size structures of A3B5 semiconductors

As estruturas quânticas de semicondutores, nomeadamente baseadas em GaAs, têm tido nos últimos vinte anos um claro desenvolvimento. Este desenvolvimento deve-se principalmente ao potencial tecnológico que estas estruturas apresentam. As aplicações espaciais, em ambientes agressivos do ponto de vista do nível de radiação a que os dispositivos estão sujeitos, motivaram todo o desenrolar de estudos na área dos defeitos induzidos pela radiação. As propriedades dos semicondutores e dos dispositivos de semicondutores são altamente influenciadas pela presença de defeitos estruturais, em particular os induzidos pela radiação. As propriedades dos defeitos, os processos de criação e transformação de defeitos devem ser fortemente alterados quando se efectua a transição entre o semicondutor volúmico e as heteroestruturas de baixa dimensão. Este trabalho teve como principal objectivo o estudo de defeitos induzidos pela radiação em estruturas quânticas baseadas em GaAs e InAs. Foram avaliadas as alterações introduzidas pelos defeitos em estruturas de poços quânticos e de pontos quânticos irradiadas com electrões e com protões. A utilização de várias técnicas de espectroscopia óptica, fotoluminescência, excitação de fotoluminescência e fotoluminescência resolvida no tempo, permitiu caracterizar as diferentes estruturas antes e após a irradiação. Foi inequivocamente constatada uma maior resistência à radiação dos pontos quânticos quando comparados com os poços quânticos e os materiais volúmicos. Esta resistência deve-se principalmente a uma maior localização da função de onda dos portadores com o aumento do confinamento dos mesmos. Outra razão provável é a expulsão dos defeitos dos pontos quânticos para a matriz. No entanto, a existência de defeitos na vizinhança dos pontos quânticos promove a fuga dos portadores dos níveis excitados, cujas funções de onda são menos localizadas, provocando um aumento da recombinação nãoradiativa e, consequentemente, uma diminuição da intensidade de luminescência dos dispositivos. O desenvolvimento de um modelo bastante simples para a estatística de portadores fora de equilíbrio permitiu reproduzir os resultados de luminescência em função da temperatura. Os resultados demonstraram que a extinção da luminescência com o aumento da temperatura é determinada por dois factores: a redistribuição dos portadores minoritários entre os pontos quânticos, o poço quântico e as barreiras de GaAs e a diminuição na taxa de recombinação radiativa relacionada com a dependência, na temperatura, do nível de Fermi dos portadores maioritários.

Fractional quantum Hall effect in second subband of a 2DES

In the present paper we report on the experimental electron sheet density vs. magnetic field diagram for the magnetoresistance R(xx) of a two-dimensional electron system (2DES) with two occupied subbands. For magnetic fields above 9T, we found fractional quantum Hall levels centered around the filing factor v = 3/2 in both the two occupied electric subbands. We focused specially on the fractional levels of the second subband, whose experimental values of the magnetic field B of their minima do not obey a periodicity law in 1/|B-B(c)|, where B(c) is the critical field at the filling factor v = 3/2, and we explain this fact entirely in the framework of the composite fermions theory. We use a simple theoretical model to give a possible explanation for the fact. Copyright (c) EPLA, 2011

Reentrant quantum Hall effect in bilayer system at high filling factors

We report on the measurements of the quantum Hall effect states in double quantum well structures at the filling factors v = 4N + 1 and 4N + 3, where N is the Landau index number, in the presence of the in-plane magnetic field. The quantum Hall states at these filling factors vanish and reappear several times. Repeated reentrance of the transport gap occurs due to the periodic vanishing of the tunneling amplitude in the presence of the in-plane field. When the gap vanishes, the transport becomes anisotropic. The anisotropy persist at half-odd filling factors, when bilayer quantum Hall states are recovered with increase of the tilt angle. (C) 2007 Elsevier B.V. All rights reserved.

PL spectroscopy of Fermi electrons in regime of the quantum Hall effect

The influence of the interlayer coupling on formation of the quantized Hall phase at the filling factor v = 2 was studied in the multilayer GaAs/AlGaAs heterostructures The disorder broaden Gaussian photoluminescence line due to the localized electrons was found in the quantized Hall phase of the isolated multi-quantum well structure On the other hand. the quantized Hall phase of the weakly-coupled multilayers emitted an asymmetrical line similar to that one observed in the metallic electron systems. We demonstrated that the observed asymmetry indicates a formation of the Fermi Surface in the quantized Hall phase of the multilayer electron system due to the interlayer peicolation. A sharp decrease of the single-particle scattering time associated with the extended states oil the Fermi surface was observed at the filling factor v = 2. (C) 2009 Elsevier B.V All rights reserved

Grain size effect on the electrical response of SnO2 thin and thick film gas sensors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Size effect on structure and dielectric properties of Nb-doped barium titanate

It is known that the dielectric properties of BaTiO3 (BT) are strongly dependent on its grain size. Coarse-grained ceramics of pure BT showed lower dielectric constant at room temperature then fine grained. Many authors considered that when the grain size is lower than 700 nm, the lattice of BT changes from tetragonal to pseudocubic, and the dielectric constant value is very low. In the doped BT this effect is more complex, because it is necessary to consider also the influence of dopants. The grain size effect on the structure and dielectric properties of niobium-doped barium titanate was investigated. Niobium-doped barium titanate was prepared from powders obtained by doping of commercial barium titanate and from organometallic complex using citrates as precursors (Pechini procedure). The crystal and microstructure of sintered niobium-doped barium titanate were determined. Dielectric constant and dissipation factor were measured. The observation confirmed that the structure and properties are strongly dependent on grain size. (C) 2003 Elsevier B.V. B.V. All rights reserved.

Grain size effect on the structural and dielectric properties of Pb0.85La0.15TiO3 ferroelectric ceramic compound

This paper presents a study of the influence of particle size on the structural and dielectric properties of Pb0.85La0.15TiO3 (PLT15) ferroelectric ceramic samples. The samples were prepared with average grain size of 1.69 +/- 0.08 mu m and 146 +/- 8 nm using, respectively, conventional and spark plasma sintering techniques. A decrease in the tetragonality degree as the crystallite size decreased was explained by an internal stress caused by the existence of a large amount of grain boundaries. The local structure exhibited no significant modification and the dielectric measurements showed a diffuse phase transition and a reduction in the permittivity magnitude at T-m as the average grain size decreased. The nanostructured ceramic sample prepared at a relatively lower temperature and sintering time presented a dielectric constant value of approximately 2000 at room temperature. (c) 2012 Elsevier Ltd and Techna Group S.r.l. All rights reserved.

A Laboratory Experiment Using Nanoindentation to Demonstrate the Indentation Size Effect

A laboratory experiment using nanoindentation to demonstrate the indentation size effect is described. This laboratory introduces students to sophisticated instrumentation at low cost and low risk and utilizes recent research in the materials community as its foundation. The motivation, learning objectives, experimental details, data, and data analysis are presented. This experiment is intended for use in an upper-division materials science elective at the university level and has been successfully used in laboratory courses for senior undergraduates and first-year graduate students at Stanford University and Santa Clara University.

Latent hardening size effect in small-scale plasticity

We aim at understanding the multislip behaviour of metals subject to irreversible deformations at small-scales. By focusing on the simple shear of a constrained single-crystal strip, we show that discrete Dislocation Dynamics (DD) simulations predict a strong latent hardening size effect, with smaller being stronger in the range [1.5 µm, 6 µm] for the strip height. We attempt to represent the DD pseudo-experimental results by developing a flow theory of Strain Gradient Crystal Plasticity (SGCP), involving both energetic and dissipative higher-order terms and, as a main novelty, a strain gradient extension of the conventional latent hardening. In order to discuss the capability of the SGCP theory proposed, we implement it into a Finite Element (FE) code and set its material parameters on the basis of the DD results. The SGCP FE code is specifically developed for the boundary value problem under study so that we can implement a fully implicit (Backward Euler) consistent algorithm. Special emphasis is placed on the discussion of the role of the material length scales involved in the SGCP model, from both the mechanical and numerical points of view.

Latent hardening size effect in small-scale plasticity

We aim at understanding the multislip behaviour of metals subject to irreversible deformations at small-scales. By focusing on the simple shear of a constrained single-crystal strip, we show that discrete Dislocation Dynamics (DD) simulations predict a strong latent hardening size effect, with smaller being stronger in the range [1.5 µm, 6 µm] for the strip height. We attempt to represent the DD pseudo-experimental results by developing a flow theory of Strain Gradient Crystal Plasticity (SGCP), involving both energetic and dissipative higher-order terms and, as a main novelty, a strain gradient extension of the conventional latent hardening. In order to discuss the capability of the SGCP theory proposed, we implement it into a Finite Element (FE) code and set its material parameters on the basis of the DD results. The SGCP FE code is specifically developed for the boundary value problem under study so that we can implement a fully implicit (Backward Euler) consistent algorithm. Special emphasis is placed on the discussion of the role of the material length scales involved in the SGCP model, from both the mechanical and numerical points of view.

Quantum Hall effect in gapped graphene heterojunctions

We model the quantum Hall effect in heterostructures made of two gapped graphene stripes with different gaps, Δ1 and Δ2. We consider two main situations, Δ1=0,Δ2≠0, and Δ1=−Δ2. They are different in a fundamental aspect: only the latter features kink states that, when intervalley coupling is absent, are protected against backscattering. We compute the two-terminal conductance of heterostructures with channel length up to 430 nm, in two transport configurations, parallel and perpendicular to the interface. By studying the effect of disorder on the transport along the boundary, we quantify the robustness of kink states with respect to backscattering. Transport perpendicular to the boundary shows how interface states open a backscattering channel for the conducting edge states, spoiling the perfect conductance quantization featured by the homogeneously gapped graphene Hall bars. Our results can be relevant for the study of graphene deposited on hexagonal boron-nitride, as well as to model graphene with an interaction-driven gapped phase with two equivalent phases separated by a domain wall.

A survey of the literature on the size effect on material strength /

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