Fabrication and emission properties of Er3+/Yb3+ codoped tellurite glass fiber for broadband optical amplification

Tellurite glass is proposed as a host for broadband erbium-doped fiber amplifiers because of their excellent optical and chemical properties. A new single mode Er3+/Yb3+ codoped tellurite fiber with D-shape cladding geometry is fabricated in this work. When pumped at 980 nm, a broad erbium amplified spontaneous emission (ASE) nearly 100 nm in the wavelength range of 1450-1650 ran around 1.53 mu m is observed. It was found that the emission spectrum from erbium in tellurite glass fibers is almost twice as broad as the corresponding spectrum in tellurite bulk glass. The changes in ASE with regard to fiber lengths and pumping power were measured and discussed. The output of about 2.3 mW from Er3+/Yb3+ codoped tellurite fiber ASE source is obtained under the pump power of 700 mW. The broad 1.53 mu m emission of Er3+ in Er3+/Yb3+ codoped tellurite glass fiber can be used as host material for potential broadband optical amplifier and tunable fiber lasers. (c) 2005 Elsevier B.V. All rights reserved.

High Er3+ concentration low refractive index fluorophosphate glass for evanescent wave optical amplifiers

This is about the first reported laser glass with very low no, high Er3+ concentration and no quenching. In this work, a series of high Er3+ concentration (10.6-12.2 x 10(20) ions/cm(3)), low refractive index (n(1550) < 1.47) and relatively high fluorescence lifetime (6.8-12.6 ms) fluorophosphate glasses were made. A cw-pumping evanescent wave optical amplifier experiment was performed with it, and a relative gain of around 2dB at 1550 nm wavelength was achieved while the noise level was almost unchanged. To our knowledge, this is the first successful relative gain in evanescent wave optical amplifiers (EWOA) demonstrated with cw pumping. It is a valuable study of specially designed fluorophosphate glass suitable for EWOA communication experiment. (C) 2008 Elsevier B.V. All rights reserved.

A novel scalable photonic analog switch architecture based on semiconductor optical amplifiers

We propose a novel semiconductor optical amplifier (SOA) based switch architecture for analog applications. Proof-of-principle experiments show that the system is very linear with an SFDR of approximately 100dB·Hz 2/3 for a switching time of 50μs. The port number of this switch is scalable and can be expanded to 80 × 80.

Large port count high-speed optical switch fabric for use within datacenters [Invited]

This paper reviews advances in the technology of integrated semiconductor optical amplifier based photonic switch fabrics, with particular emphasis on their suitability for high performance network switches for use within a datacenter. The key requirements for large port count optical switch fabrics are addressed noting the need for switches with substantial port counts. The design options for a 16×16 port photonic switch fabric architecture are discussed and the choice of a Clos-tree design is described. The control strategy, based on arbitration and scheduling, for an integrated switch fabric is explained. The detailed design and fabrication of the switch is followed by experimental characterization, showing net optical gain and operation at 10 Gb/s with bit error rates lower than 10-9. Finally improvements to the switch are suggested, which should result in 100 Gb/s per port operation at energy efficiencies of 3 pJ/bit. © 2011 Optical Society of America.

Negligible penalty all-optical routing using a 12 × 12 passive InP wavelength-selective router

This work demonstrates transmission at 2.5 Gbit/s across two wavelength-division multiplexing (WDM) network nodes, constructed using counter-propagating semiconductor optical amplifier (SOA) wavelength converters and an integrated wavelength-selective router separated by 45 km of fiber, with an overall penalty of 0.6 dB. Minimal degradation of the eye diagram is evident across the whole system. Full utilization of the capacity of the router would allow an aggregate 360-Gbit/s node capacity for a WDM channel of 2.5 Gb/s.

Wavelength reused bidirectional transmission of adaptively modulated optical OFDM signals in WDM-PONs incorporating SOA and RSOA intensity modulators.

Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a colorless WDM-PON incorporating a semiconductor optical amplifier (SOA) intensity modulator and a reflective SOA (RSOA) intensity modulator in the optical line termination and optical network unit, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5 Gb/s. It is shown that the RB noise and crosstalk effects are dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10 Gb/s downstream and 6 Gb/s upstream over 40 km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing in-line optical amplification and chromatic dispersion compensation. In particular, the aforementioned transmission performance can be improved to 23 Gb/s downstream and 8 Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems.

Experimental demonstration of real-time optical OFDM Transmission at 7.5 Gb/s over 25-km SSMF using a 1-GHz RSOA

The 7.5-Gb/s real-time end-to-end optical orthogonal frequency-division- multiplexing (OOFDM) transceivers incorporating variable power loading on each individual subcarrier are demonstrated experimentally using a live-optimized reflective semiconductor optical amplifier intensity modulator having a modulation bandwidth as narrow as 1 GHz. Real-time OOFDM signal transmission at 7.5 Gb/s over 25-km standard single-mode fiber is achieved across the $C$-band in simple intensity modulation and direct detection systems without in-line optical amplification and dispersion compensation. © 2006 IEEE.

Broad-band semiconductor optical amplifiers

Broad-band semiconductor optical amplifiers (SOAs) with different thicknesses and thin bulk tensile-strained active layers were fabricated and studied. Amplified spontaneous emission (ASE) spectra and gain spectra of SOAs were measured and analyzed at different CW biases. A maximal 3 dB ASE bandwidth of 136 nm ranging from 1480 to 1616 nm, and a 3 dB optical amplifier gain bandwidth of about 90 nm ranging from 1510 to 1600 nm, were obtained for the very thin bulk active SOA. Other SOAs characteristics such as saturation output power and polarization sensitivity were measured and compared. (c) 2006 Elsevier B.V. All rights reserved.

Measurement and analysis of microwave frequency response of semiconductor optical amplifiers - art. no. 682406

The measurement and analysis of the microwave frequency response of semiconductor optical amplifiers (SOAs) are proposed in this paper. The response is measured using a vector network analyzer. Then with the direct-subtracting method, which is based on the definition of scattering parameters of optoelectronic devices, the responses of both the optical signal source and the photodetector are eliminated, and the response of only the SOA is extracted. Some characteristics of the responses can be observed: the responses are quasi-highpass; the gain increases with the bias current; and the response becomes more gradient while the bias current is increasing. The multisectional model of an SOA is then used to analyze the response theoretically. By deducing from the carrier rate equation of one section under the steady state and the small-signal state, the expression of the frequency response is obtained. Then by iterating the expression, the response of the whole SOA is simulated. The simulated results are in good agreement with the measured on the three main characteristics, which are also explained by the deduced results. This proves the validity of the theoretical analysis.

SOA-based polarity-preserving all-optical wavelength conversion at 80Gbit/s: Wide conversion range, well dynamic characteristics and polarization insensitive

This letter presents the effective design of a tunable 80 Gbit/s wavelength converter with a simple configuration consisting of a single semiconductor optical amplifier (SOA) and an optical bandpass filter (OBPF). Based on both cross-gain and cross-phase modulation in SOA, the polarity-preserved, ultrafast wavelength conversion is achieved by appropriately filtering the blue-chirped spectral component of a probe light. Moreover, the experiments are carried out to investigate into the wavelength tunability and the maximum tuning range of the designed wavelength converter. Our results show that a wide wavelength conversion range of nearly 35 nm is achieved with 21-nm downconversion and 14-nm upconversion, which is substantially limited by the operation wavelength ranges of a tunable OBPF and a tunable continuous-wave laser in our experiment. We also exploited the dynamics characteristics of the wavelength converter with variable input powers and different injection current of SOA. (C) 2008 Wiley Periodicals, Inc.

Design and fabrication of polarization-insensitive 1550 mm semiconductor optical amplifiers

Polarization-insensitive semiconductor optical amplifiers (SOA's) with tensile-strained multi-quantum-wells as actice regions are designed and fabricated. The 6x6 Luttinger-Kohn model and Bir-Pikus Hamiltonian are employed to calculate the valence subband structures of strained quantum wells, and then a Lorentzian line-shape function is combined to calculate the material gain spectra for TE and TM modes. The device structure for polarization insensitive SOA is designed based on the materialde gain spectra of TE and TM modes and the gain factors for multilayer slab waveguide. Based on the designed structure parameters, we grow the SOA wafer by MOCVD and get nearly magnitude of output power for TE and TM modes from the broad-area semiconductor lasers fabricated from the wafer.

All-optical modulation converter for on-off keying to duobinary and alternate-mark inversion at 42.6 Gbps

Advanced modulation formats have become increasingly important as telecoms engineers strive for improved tolerance to both linear and nonlinear fibre-based transmission impairments. Two important modulation schemes are Duobinary (DB) and Alternate-mark inversion (AMI) [1] where transmission enhancement results from auxiliary phase modulation. As advanced modulation formats displace Return-to-zero On-Off Keying (RZ-OOK), inter-modulation converters will become increasingly important. If the modulation conversion can be performed at high bitrates with a small number of operations per bit, then all-optical techniques may offer lower energy consumption compared to optical-electronic-optical approaches. In this paper we experimentally demonstrate an all-optical system incorporating a pair of hybrid-integrated semiconductor optical amplifier (SOA)-based Mach-Zehnder interferometer (MZI) gates which translate RZ-OOK to RZ-DB or RZ-AMI at 42.6 Gbps. This scheme includes a wavelength conversion to arbitrary output wavelength and has potential for high-level photonic integration, scalability to higher bitrates, and should exhibit regenerative properties [2].

High speed nonlinear optical components for next-generation optical communications

Electronic signal processing systems currently employed at core internet routers require huge amounts of power to operate and they may be unable to continue to satisfy consumer demand for more bandwidth without an inordinate increase in cost, size and/or energy consumption. Optical signal processing techniques may be deployed in next-generation optical networks for simple tasks such as wavelength conversion, demultiplexing and format conversion at high speed (≥100Gb.s-1) to alleviate the pressure on existing core router infrastructure. To implement optical signal processing functionalities, it is necessary to exploit the nonlinear optical properties of suitable materials such as III-V semiconductor compounds, silicon, periodically-poled lithium niobate (PPLN), highly nonlinear fibre (HNLF) or chalcogenide glasses. However, nonlinear optical (NLO) components such as semiconductor optical amplifiers (SOAs), electroabsorption modulators (EAMs) and silicon nanowires are the most promising candidates as all-optical switching elements vis-à-vis ease of integration, device footprint and energy consumption. This PhD thesis presents the amplitude and phase dynamics in a range of device configurations containing SOAs, EAMs and/or silicon nanowires to support the design of all optical switching elements for deployment in next-generation optical networks. Time-resolved pump-probe spectroscopy using pulses with a pulse width of 3ps from mode-locked laser sources was utilized to accurately measure the carrier dynamics in the device(s) under test. The research work into four main topics: (a) a long SOA, (b) the concatenated SOA-EAMSOA (CSES) configuration, (c) silicon nanowires embedded in SU8 polymer and (d) a custom epitaxy design EAM with fast carrier sweepout dynamics. The principal aim was to identify the optimum operation conditions for each of these NLO device configurations to enhance their switching capability and to assess their potential for various optical signal processing functionalities. All of the NLO device configurations investigated in this thesis are compact and suitable for monolithic and/or hybrid integration.

Analysis and optimisation of semiconductor reflective modulators for optical networks

Reflective modulators based on the combination of an electroabsorption modulator (EAM) and semiconductor optical amplifier (SOA) are attractive devices for applications in long reach carrier distributed passive optical networks (PONs) due to the gain provided by the SOA and the high speed and low chirp modulation of the EAM. Integrated R-EAM-SOAs have experimentally shown two unexpected and unintuitive characteristics which are not observed in a single pass transmission SOA: the clamping of the output power of the device around a maximum value and low patterning distortion despite the SOA being in a regime of gain saturation. In this thesis a detailed analysis is carried out using both experimental measurements and modelling in order to understand these phenomena. For the first time it is shown that both the internal loss between SOA and R-EAM and the SOA gain play an integral role in the behaviour of gain saturated R-EAM-SOAs. Internal loss and SOA gain are also optimised for use in a carrier distributed PONs in order to access both the positive effect of output power clamping, and hence upstream dynamic range reduction, combined with low patterning operation of the SOA Reflective concepts are also gaining interest for metro transport networks and short reach, high bit rate, inter-datacentre links. Moving the optical carrier generation away from the transmitter also has potential advantages for these applications as it avoids the need for cooled photonics being placed directly on hot router line-cards. A detailed analysis is carried out in this thesis on a novel colourless reflective duobinary modulator, which would enable wavelength flexibility in a power-efficient reflective metro node.

All-optical processing systems based on semiconductor optical amplifiers

Nesta tese investigam-se e desenvolvem-se dispositivos para processamento integralmente óptico em redes com multiplexagem densa por divisão no comprimento de onda (DWDM). O principal objectivo das redes DWDM é transportar e distribuir um espectro óptico densamente multiplexado com sinais de débito binário ultra elevado, ao longo de centenas ou milhares de quilómetros de fibra óptica. Estes sinais devem ser transportados e encaminhados no domínio óptico de forma transparente, sem conversões óptico-eléctrico-ópticas (OEO), evitando as suas limitações e custos. A tecnologia baseada em amplificadores ópticos de semicondutor (SOA) é promissora graças aos seus efeitos não-lineares ultra-rápidos e eficientes, ao potencial para integração, reduzido consumo de potência e custos. Conversores de comprimento de onda são o elemento óptico básico para aumentar a capacidade da rede e evitar o bloqueio de comprimentos de onda. Neste trabalho, são estudados e analisados experimentalmente métodos para aumentar a largura de banda operacional de conversores de modulação cruzada de ganho (XGM), a fim de permitir a operação do SOA para além das suas limitações físicas. Conversão de um comprimento de onda, e conversão simultânea de múltiplos comprimentos de onda são testadas, usando interferómetros de Mach-Zehnder com SOA. As redes DWDM de alto débito binário requerem formatos de modulação optimizados, com elevada tolerância aos efeitos nefastos da fibra, e reduzida ocupação espectral. Para esse efeito, é vital desenvolver conversores integramente ópticos de formatos de modulação, a fim de permitir a interligação entre as redes já instaladas, que operam com modulação de intensidade, e as redes modernas, que utilizam formatos de modulação avançados. No âmbito deste trabalho é proposto um conversor integralmente óptico de formato entre modulação óptica de banda lateral dupla e modulação óptica de banda lateral residual; este é caracterizado através de simulação e experimentalmente. Adicionalmente, é proposto um conversor para formato de portadora suprimida, através de XGM e modulação cruzada de fase. A interligação entre as redes de transporte com débito binário ultra-elevado e as redes de acesso com débito binário reduzido requer conversão óptica de formato de impulso entre retorno-a-zero (RZ) e não-RZ. São aqui propostas e investigadas duas estruturas distintas: uma baseada em filtragem desalinhada do sinal convertido por XGM; uma segunda utiliza as dinâmicas do laser interno de um SOA com ganho limitado (GC-SOA). Regeneração integralmente óptica é essencial para reduzir os custos das redes. Dois esquemas distintos são utilizados para regeneração: uma estrutura baseada em MZI-SOA, e um método no qual o laser interno de um GC-SOA é modulado com o sinal distorcido a regenerar. A maioria dos esquemas referidos é testada experimentalmente a 40 Gb/s, com potencial para aplicação a débitos binários superiores, demonstrado que os SOA são uma tecnologia basilar para as redes ópticas do futuro.