988 resultados para hybrid devices


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In this contribution we report the research and development of 1.55 mu m InGaAsP/InP gain-coupled DFB laser with an improved injection-carrier induced grating and of high performance 1.3 mu m and 1.55 mu m InGaAsP/InP FP and DFB lasers for communications. Long wavelength strained MQW laser diodes with a very low threshold current (7-10 mA) have been fabricated. Low pressure MOVPE technology has been employed for the preparation of the layered structure. A novel gain-coupled DFB laser structure with an improved injection-carrier modulated grating has been proposed and fabricated. The laser structures have been prepared by hybrid growth of MOVPE and LPE techniques and reasonably good characteristics have been achieved for resultant lasers. High performance 1.3 mu m and 1.55 mu m InGaAsP/InP DFB lasers have successfully been developed for CATV and trunk line optical fiber communication.

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We report the fabrication of permeable metal-base transistors based on bis(2-methyl-8-quinolinolato-N1,O8)-(1,1'-biphenyl-4-olato) aluminum (BAlq(3))/tri(8-hydroxyquinoline) aluminum (Alq(3)) isotype heterostructure as emitter layer. In this transistor, n-Si was used as the collector, LiF/Al as the emitter electrode, and Au/Al bilayer metal as the base. We show that the leakage current is greatly reduced in Al/n-Si/Au/Al/BAlq(3)/Alq(3)/LiF/Al devices with respect to Al/n-Si/Au/Al/Alq(3)/LiF/Al devices due to the utilization of BAlq(3)/Alq(3) isotype heterostructure emitter, leading to high common-base and common-emitter current gains at low driving voltages.

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A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials. (C) 2009 Elsevier B.V. All rights reserved.

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A new kind of polyfluorene copolymers, poly(2,7-(9,9-dioctyl-fluorene)-alt-5,5 -(4',7'-di-2-thienyl-2',1',3',-benzothiadiazole) (PFDTBT), was prepared. The introduction of ZnO nanoparticles with perfect wurtzite crystal character into PFDTBT makes the resulted single-layer photovoltaic device to perform a significant photovoltaic response. Among the tested devices, the best performance is observed for that containing 60 wt% of ZnO nanoparticles, which has a photocurrent density of 1.17 mu A/cm(2), an open circuit voltage of 0.81 V. a fill factor of 0.09 and a power conversion efficiency of 0.009%. The results show that the polyfluorene derivatives/ZnO nanoparticles hybrid composites are excellent fluorescence and photovoltaic materials.

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In this work we present a permeable base transistor consisting of a 60 nm thick N,N'diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine layer or a 40 nm thick 2,6-diphenyl-indenofluorene layer as the emitter, a CalAl/Ca multilayer as the metal base, and p-Si as collector. In the base, the Ca layers are 5 nm thick and the Al layer was varied between 10 and 40 nm. the best results obtained with a 20 nm thick layer. The devices present common-base current gain with both organic layer and silicon acting as emitter, but there is only observable common-emitter current gain when the organic semiconductor acts as emitter. The obtained common-emitter current gain, similar to 2, is independent on collector-emitter voltage, base current and organic emitter in a reasonable wide interval. Air exposure or annealing of the base is necessary to achieve these characteristics, indicating that an oxide layer is beneficial to proper device operation.

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In this paper, we have reported a very simple strategy (combined sonication with sol-gel techniques) for synthesizing well-defined silica-coated carbon nanotube (CNT) coaxial nanocable without prior CNT functionalization. After functionalization with NH2 group, the CNT/silica coaxial nanocable has been employed as a three-dimensional support for loading ultra-high-density metal or hybrid nanoparticles (NPs) such as gold NPs, Au/Pt hybrid NPs, Pt hollow NPs, and Au/Ag core/shell NPs. Most importantly, it is found that the ultra-high-density Au/Pt NPs supported on coaxial nanocables (UASCN) could be used as enhanced materials for constructing electrochemical devices with high performance. Four model probe molecules (O-2, CH3OH, H2O2, and NH2NH2) have been investigated on UASCN-modified glassy carbon electrode (GCE). It was observed that the present UASCN exhibited high electrocatalytic activity toward diverse molecules and was a promising electrocatalyst for constructing electrochemical devices with high performance. For instance, the detection limit for H2O2 with a signal-to-noise ratio of 3 was found to be 0.3 mu M, which was lower than certain enzyme-based biosensors.

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We report the electrical characterization of hybrid permeable-base transistors with tris(8-hydroxyquinoline) aluminum as emitter layer. These transistors were constructed presenting an Al/n-Si/Au/Alq(3)/V2O5/Al structure. We investigate the influence of the V2O5 layer thickness and demonstrate that these devices present high common-base and common-emitter current gain, and can be operated at very low driving voltages, lower than 1 V, in both, common-base and common-emitter modes.

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Negative differential resistance (NDR) and memory effect were observed in diodes based on 1,4-dibenzyl C60 (DBC) and zinc phthalocyanine doped polystyrene hybrid material. Certain negative starting sweeping voltages led to a reproducible NDR, making the hybrid material a promising candidate in memory devices. It was found that the introduction of DBC enhanced the ON/OFF current ratio and significantly improved the memory stability. The ON/OFF current ratio was up to 2 orders of magnitude. The write-read-erase-reread cycles were more than 10(6), and the retention time reached 10 000 s without current degradation.

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Novel hybrid thin films covalently doped with Eu3+ (Tb3+) have been prepared via direct routes involving co-condensation of tetraethoxysilane and phen-Si in the presence of Eu3+ (Tb3+) by spin-casting and their luminescence properties have been investigated in detail. Lanthanide ions can be sensitized by anchored phenanthroline in hybrid thin films. Excitation at the ligand absorption wavelength (272 nm) resulted in the strong emission of the lanthanide ions i.e. Eu3+ D-5(0)-F-7(J) (J=0, 1, 2, 3, 4) emission lines and Tb3+ D-5(4)-F-7(J) (J = 6, 5, 4, 3) due to the energy transfer from the ligands to the lanthanide ions.

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This thesis covers both the packaging of silicon photonic devices with fiber inputs and outputs as well as the integration of laser light sources with these same devices. The principal challenge in both of these pursuits is coupling light into the submicrometer waveguides that are the hallmark of silicon-on-insulator (SOI) systems. Previous work on grating couplers is leveraged to design new approaches to bridge the gap between the highly-integrated domain of silicon, the Interconnected world of fiber and the active region of III-V materials. First, a novel process for the planar packaging of grating couplers with fibers is explored in detail. This technology allows the creation of easy-to-use test platforms for laser integration and also stands on its own merits as an enabling technology for next-generation silicon photonics systems. The alignment tolerances of this process are shown to be well-suited to a passive alignment process and for wafer-scale assembly. Furthermore, this technology has already been used to package demonstrators for research partners and is included in the offerings of the ePIXfab silicon photonics foundry and as a design kit for PhoeniX Software’s MaskEngineer product. After this, a process for hybridly integrating a discrete edge-emitting laser with a silicon photonic circuit using near-vertical coupling is developed and characterized. The details of the various steps of the design process are given, including mechanical, thermal, optical and electrical steps. The interrelation of these design domains is also discussed. The construction process for a demonstrator is outlined, and measurements are presented of a series of single-wavelength Fabry-Pérot lasers along with a two-section laser tunable in the telecommunications C-band. The suitability and potential of this technology for mass manufacture is demonstrated, with further opportunities for improvement detailed and discussed in the conclusion.

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The objective of this thesis is the exploration and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, nanofabricate and characterize Au nanorods-semiconductor nanowire hybrid nanodevices with novel optoelectronic capabilities compared to the non-hybrid counterpart. In this regards, I first discuss the seed-mediated protocols to synthesize Au nanorods with different sizes and the influence of nanorod geometries and non-homogeneous surrounding medium on the optical properties investigated by theoretical simulation. Novel methodologies for assembling Au nanorods on (i) a Si/SiO2 substrate with highly-ordered architecture and (ii) on semiconductor nanowires with spatial precision are developed and optimized. By exploiting these approaches, I demonstrate that Raman active modes of an individual ZnO nanowire can be detected in non-resonant conditions by exploring the longitudinal plasmonic resonance mediation of chemical-synthesized Au nanorods deposited on the nanowire surface otherwise not observable on bare ZnO nanowire. Finally, nanofabrication and detailed electrical characterization of ZnO nanowire field-effect transistor (FET) and optoelectronic properties of Au nanorods - ZnO nanowire FET tunable near-infrared photodetector are investigated. In particular we demonstrated orders of magnitude enhancement in the photocurrent intensity in the explored range of wavelengths and 40 times faster time response compared to the bare ZnO FET detector. The improved performance, attributed to the plasmonicmediated hot-electron generation and injection mechanism underlying the photoresponse is investigated both experimentally and theoretically. The miniaturized, tunable and integrated capabilities offered by metal nanorodssemicondictor nanowire device architectures presented in this thesis work could have an important impact in many application fields such as opto-electronic sensors, photodetectors and photovoltaic devices and open new avenues for designing of novel nanoscale optoelectronic devices.

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While the number of traditional laptops and computers sold has dipped slightly year over year, manufacturers have developed new hybrid laptops with touch screens to build on the tactile trend. This market is moving quickly to make touch the rule rather than the exception and the sales of these devices have tripled since the launch of Windows 8 in 2012, to reach more than sixty million units sold in 2015. Unlike tablets, that benefit from easy-to-use applications specially designed for tactile interactions, hybrid laptops are intended to be used with regular user-interfaces. Hence, one could ask whether tactile interactions are suited for every task and activity performed with such interfaces. Since hybrid laptops are increasingly used in educational situations, this study focuses on information search tasks which are commonly performed for learning purposes. It is hypothesized that tasks that require complex and/or less common gestures will increase user's cognitive load and impair task performance in terms of efficacy and efficiency. A study was carried out in a usability laboratory with 30 participants for whom prior experience with tactile devices has been controlled. They were asked to perform information search tasks on an online encyclopaedia by using only the touch screen of and hybrid laptop. Tasks were selected with respect to their level of cognitive demand (amount of information that had to be maintained in working memory) and the complexity of gestures needed (left and/or right clicks, zoom, text selection and/or input.), and grouped into 4 sets accordingly. Task performance was measured by the number of tasks succeeded (efficacy) and time spent on each task (efficiency). Perceived cognitive load was assessed thanks to a questionnaire given after each set of tasks. An eye tracking device was used to monitor users' attention allocation and to provide objective cognitive load measures based on pupil dilation and the Index of Cognitive Activity. Each experimental run took approximately one hour. The results of this within-subjects design indicate that tasks involving complex gestures led to a lower efficacy, especially when the tasks were cognitively demanding. Regarding efficacy, there is no significant differences between sets of tasks excepted for tasks with low cognitive demand and complex gestures that required more time to be achieved. Surprisingly, users that declared the biggest experience with tactile devices spent more time than less frequent users. Cognitive load measures indicate that participants reported having devoted more mental effort in the interaction when they had to use complex gestures.

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The optical properties of plasmonic semiconductor devices fabricated by focused ion beam (FIB) milling deteriorate because of the amorphisation of the semiconductor substrate. This study explores the effects of combining traditional 30 kV FIB milling with 5 kV FIB patterning to minimise the semiconductor damage and at the same time maintain high spatial resolution. The use of reduced acceleration voltages is shown to reduce the damage from higher energy ions on the example of fabrication of plasmonic crystals on semiconductor substrates leading to 7-fold increase in transmission. This effect is important for focused-ion beam fabrication of plasmonic structures integrated with photodetectors, light-emitting diodes and semiconductor lasers.

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Plug-in hybrid electric vehicles (PHEVs) provide much promise in reducing greenhouse gas emissions and, thus, are a focal point of research and development. Existing on-board charging capacity is effective but requires the use of several power conversion devices and power converters, which reduce reliability and cost efficiency. This paper presents a novel three-phase switched reluctance (SR) motor drive with integrated charging functions (including internal combustion engine and grid charging). The electrical energy flow within the drivetrain is controlled by a power electronic converter with less power switching devices and magnetic devices. It allows the desired energy conversion between the engine generator, the battery, and the SR motor under different operation modes. Battery-charging techniques are developed to operate under both motor-driving mode and standstill-charging mode. During the magnetization mode, the machine's phase windings are energized by the dc-link voltage. The power converter and the machine phase windings are controlled with a three-phase relay to enable the use of the ac-dc rectifier. The power converter can work as a buck-boost-type or a buck-type dc-dc converter for charging the battery. Simulation results in MATLAB/Simulink and experiments on a 3-kW SR motor validate the effectiveness of the proposed technologies, which may have significant economic implications and improve the PHEVs' market acceptance