907 resultados para high beam quality
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根据波导模理论,推导了高功率激光二极管阵列的远场分布,根据其分布特点,设计了一种离轴外腔.运用这种外腔,在工作电流为17A时,光束的束宽积从自由运转时的1100mm.mrad减小到128mm.mrad,二极管阵列的光束质量提高了8.5倍左右,输出功率约为自由运转时的75%.
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提出一种新型光束质量实时测量技术, 该技术主要基于由平板反射镜组成的多平面成像系统, 一次性将激光束腰附近2倍瑞利距离内的多个光斑成像在同一个平面上, 用CCD相机获取这些光斑的光强分布图样。通过图像处理获知接收到的光斑的光强分布。采用远场发散角、焦点尺寸、桶中功率比和M2因子四种光束质量评价标准对激光光束质量进行评价。利用该方法实时测量了高能钕玻璃双板条激光器的输出光束。
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报道了利用声光振幅调制锁模的方法,在激光二极管端面抽运Nd:YVO4激光器上获得320MHz高重复频率脉冲列的实验结果。实验采用平一平腔结构,腔长452mm,耦合输出镜透过率为3.6%。所用声光介质为熔融石英晶体,以铌酸锂作换能器,在驱动功率4.5W时,对1064nm波长衍射效率为50,相应的调制深度为0.31。在最佳锁模状态下,激光二极管抽运功率为3.5W,此时激光平均输出功率为15mw。示波器记录脉冲宽度680ps,实测光束质量因子M^2小于1.5。并在实验基础上对激光器工作的稳定性进行了分析,结果表
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A planar waveguide laser operating in a negative branch unstable resonator is Q-switched by an acoustooptic mod latorin anew configuration, providing effective, high-speed switching. The laser using a 200-mu m Nd:YAG core, face pumped by 10 laser diode bars, has produced 100-W output in a good beam quality at 100-kHz pulse rate, and 4.5 mJ at lower frequency with 15-ns pulse duration.
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缠绕技术通常被用于大模场面积多模光纤激光器的横模控制。将光纤弯曲成不同半径的圆环,多模光纤激光器的高阶横模逐个被抑制并在缠绕半径为20mm时,获得15.4W的单模激光输出。实验研究表明,缠绕半径减小时,由于激光器高阶模式被抑制,其光束质量变好,同时其斜率效率降低。实验测量了多模光纤激光器在不同缠绕半径下的输出性能,并理论计算了各阶模式在不同缠绕半径下的损耗特性。实验测量结果与理论计算结果符合得较好。
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采用光纤缠绕的方法,来抑制大模场面积(LMA)双包层光纤激光器中的高阶模振荡。将光纤缠绕至两种不同半径,实验测量了相应条件下激光器的输出功率和光束质量因子M2。缠绕半径为165mm时,输出功率为217W,M2为2.96;缠绕半径为52mm时,输出功率为160W,M2为1.38。光纤激光器相应的斜率效率分别为60%和48%。光纤缠绕半径较小时,虽然激光器输出功率减小,但其亮度是大缠绕半径时对应值的3.4倍。
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文中报道了一台采用激光二极管部分边缘泵浦方式的高功率薄片激光器,晶体尺寸是1 mm×10 mm×60 mm。Cr4+:YAG被用来作为被动调Q晶体,在重复频率高于10kHz时,获得了脉宽10ns,平均功率70W,斜线效率为36\%的激光输出。通过控制泵浦光束直径的大小,我们在厚度方向得到了近似衍射极限的光束输出。整个激光器结构紧凑,大小为60 mm×174 mm×150 mm。
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A novel double-slab Nd:YAG laser, which uses face-pumped slab medium cooled by liquid with different temperatures on both sides, is proposed. The thermal distortion of wavefront caused by the non-uniform temperature distribution in the laser gain media can be self-compensated. According to the method of operation, the models of the temperature distribution and stress are presented, and the analytic solutions for the model are derived. Furthermore, the numerical simulations with pulse pumping energy of 10 J and repetition frequencies of 500 and 1000 Hz are calculated respectively for Nd:YAG laser medium. The simulation results show that the temperature gradient remains the approximative linearity, and the heat stress is within the extreme range. Then the absorption coefficient is also discussed. The result indicates that the doping concentration cannot be too large for the high repetition frequency laser. It has been proved that the high repetition frequency, high laser beam quality, and high average output power of the order of kilowatt of Nd: YAG slab laser can be achieved in this structure.
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Based on the Collins integral formula, the analytic expressions of propagation of the coherent and the incoherent off-axis Hermite-cosh-Gaussian (HChG) beam combinations with rectangular symmetry passing through a paraxial first-order optical system are derived, and corresponding numerical examples are given and analysed. The resulting beam quality is discussed in terms of power in the bucket (PIB). The study suggests that the resulting beam cannot keep the initial intensity shape during the propagation and the beam quality for coherent mode is not always better than that for incoherent mode. Reviewing the numerical simulations of Gaussian, Hermite-Gaussian (HG) and cosh Gaussian (ChG) beam combinations indicates that the Hermite polynomial exerts a chief influence on the irradiance profile of composite beam and far field power concentration.
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We developed a highly efficient diode side-pumped Nd:YAG ceramic laser with a diffusive reflector as an optical pump cavity. A maximum output power of 211.6W was obtained with an optical -to- optical conversion efficiency of 48.7%. This corresponds to the highest conversion efficiency in the side-pumped ceramic rod. Thermal effects of the Nd:YAG ceramic rod were analyzed in detail through the measurements of laser output powers and beam profiles near the critically unstable region. A M-2 beam quality factor of 18.7 was obtained at the maximum laser output power. (c) 2006 Elsevier Ltd. All rights reserved.
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The CaF2 single crystals with diameters up to 200 mm were successfully grown by modified temperature gradient technique (TGT), which are suitable for application as optical elements in the ultraviolet range. The optimizations of various growth parameters were systematically studied. Properties of as-grown CaF2 crystals were characterized by the nature of inclusions, dislocations, crystallinity, and impurities contents. The results showed that the dislocations and multinucleation were mostly constrained in the conical part of the crystals with the cylindrical parts having the best crystalline quality and lowest impurity contents. The high optical quality of TGT-grown CaF2 single crystals was also confirmed to have excellent optical transmission in 190-2500 nm and refractive index homogeneity. (c) 2005 Elsevier Ltd. All rights reserved.
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Low-threshold and highly efficient continuous-wave laser performance of Yb:Y3Al5O12 (Yb:YAG) single crystal grown by a temperature gradient technique (TGT) was achieved at room temperature. The laser can be operated at 1030 and 1049 nm by varying the transmission of the output coupler. Slope efficiencies of 57% and 68% at 1049 and 1030 nm, respectively, were achieved for 10 at. % Yb:YAG sample in continuous-wave laser-diode pumping. The effect of pump power on the laser emission spectrum of both wavelengths is addressed. The near-diffraction-limited beam quality for different laser cavities was achieved. The excellent laser performance indicates that TGT-grown Yb:YAG crystals have very good optical quality and can be potentially used in high-power solid-state lasers.
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The use of large size Si substrates for epitaxy of nitride light emitting diode (LED) structures has attracted great interest because Si wafers are readily available in large diameter at low cost. In addition, such wafers are compatible with existing processing lines for the 6-inch and larger wafer sizes commonly used in the electronics industry. With the development of various methods to avoid wafer cracking and reduce the defect density, the performance of GaN-based LED and electronic devices has been greatly improved. In this paper, we review our methods of growing crack-free InGaN-GaN multiple quantum well (MQW) LED structures of high crystalline quality on Si(111) substrates. The performance of processed LED devices and its dependence on the threading dislocation density were studied. Full wafer-level LED processing using a conventional 6-inch III-V processing line is also presented, demonstrating the great advantage of using large-size Si substrates for mass production of GaN LED devices.
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In this paper, a mini-staged multi-stacked quantum cascade laser structure with a designed wavelength of 4.7 mu m is presented. By introducing five 0.5 mu m thick high thermal conductivity InP interbuffer layers, the 60-stages active region core of the quantum cascade laser is divided into six equal parts. Based on simulation, this kind of quantum cascade laser with a 10 mu m ridge width gives nearly circular two-dimensional far-field distribution (FWHM = 32.8 degrees x 29 degrees) and good beam quality parameters M-2 = 1.32 x 1.31 in the fast axis (growth direction) and the slow axis (lateral direction). Due to the enhancement of lateral heat extraction through the interbuffer layers, compared to the conventional structure, a decrease of about 5-6% for the maximum temperature in the active region core of the mini-staged multi-stacked quantum cascade laser with indium-surrounded and gold-electroplated packaging profiles is obtained at all possible dissipated electrical power levels.
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High material quality is the basis of quantum cascade lasers (QCLs). Here we report the solid source molecular beam epitaxy (MBE) growth details of realizing high quality of InGaAs/InAlAs QCL structures. Accurate control of material compositions, layer thickness, doping profile, and interface smoothness can be realized by optimizing the growth conditions. Double crystal x-ray diffraction discloses that our grown QCL structures possess excellent periodicity and sharp interfaces. High quality laser wafers are grown in a single epitaxial run. Room temperature continuous-wave (cw) operation of QCLs is demonstrated.