STRUCTURAL DEFECTS AND THEIR ELECTRICAL-ACTIVITY IN GERMANIUM IMPLANTED SILICON

The electrical and structural characteristics of secondary defects in regrown amorphous layers formed in n-type Si(100) with a resistivity of 2 OMEGA cm and 6 OMEGA cm using Ge+ ions, has been studied. The amorphous layers with a thickness of 460 nm are formed by implantation of 1 x 10(15) Ge+ cm-2 at an energy of 400 keV. Both conventional furnace and rapid thermal annealing were used to regrow the amorphous layer and the residual defects have been characterised in terms of their concentration depth distribution and activation energies using C-V and DLTS. Structural information has been obtained from RBS and XTEM. By choosing suitable anneal conditions it is possible to eliminate extended defects, apart from a low concentration of end of range dislocation loops. However, a substantial population of electrically active point defects remain after simple low thermal budget anneals. In a sample implanted with 1 x 10(15) Ge+ cm-2 at 400 keV a region of deep donors approximately 460 nm from the surface is always present When the samples are annealed at higher temperatures (> 850-degrees the total deep donor concentration is reduced by one order of magnitude. Other electrically active defects not observable in the low (750-degrees-C) temperature annealed layers become apparent during anneals at intermediate temperatures.

Synthesis, structures and antitumor activities of beta-phenolester propyl germanium sesquioxides

Eight new compounds of (GeCH2CH (CH3) COOAr)(2)O-3 type were synthesized. Four of them were tested for antitumor activities against Hela cells in vitro, showing considerable tumor inhibitory activities.

CRYSTAL AND MOLECULAR STRUCTURES AND MS ANALYSE OF beta-CARBOXYLETHYL (OR alpha-METHYLETHYL) GERMANIUM TRICHLORIDES

This paper reports the results of the crystal and molecular structures, CI-MS and FAB-MS analyse of Cl3GeCH2CH2COOH and Cl3GeCH(CH3)CH2COOH. The characters and active parts of these molecules are also discussed

PROPERTIES OF BETA-CARBOXYETHYL-GERMANIUM SESQUIOXIDE AND INTERACTIONS OF IT WITH SOME SUBSTRATES

Three samples of β-carboxyethyl-germanium sesquioxide (Ge-132) have been prepared with different methods. Their IR, Raman, XPS, TG-DTA and FAB-MS spectra are quite different and indicate that they have different degree of polymerization and molecule structures. In the aqeous solution, all of them interaot strongly with fructose, but not with polypeptides such as GSH and GSSG. This faot may be important in understanding the bioactivity of Ge-132.

Impact of germanium on the growth of Pseudonitzschia pungens f. multiseries and the production of algal toxin

The impacts of germanic acid Ge(OH)(4) on the growth of Psuedonitzschia pungens f. multiseries and on the production of the algal toxin, domoic acid, were studied. The results showed that germanic acid in the range of concentrations could inhibit the growth of the algal cells and the inhibition was enhancing with the concentrations of germanic acid increasing. Germanic acid also could inhibit the production of the algal toxin, domoic acid in cells and the inhibition reached up to 100% at Ge/Si = 35. Based on the results, the mechanism was discussed.