Synthesis and electrical properties of new solid state. Electrolyte materials Ce5.2RE0.8MoO15-delta

A series of solid state electrolytes, Ce-5.2 RE0.8 MoO15-delta (RE = Y, La, Sm, Gd, Dy, Ho, Er), were synthesized by sol-gel method. Their structures and electrical conductivities were characterized by X-ray Diffraction (XRD), Raman and X-ray Photoelectron Spectroscopy (XPS) and AC impedance spectroscopy, respectively. The results show that the concentrations of oxygen vacancy increased with increasing x and their conductivity were improved. And the cell parameters increase as the radius of RE3+ increases. Because the ionic radius of doped Dy3+ (0.0908 nm) is closed to that of Ce4+ (0.0920 nm), their oxide has minimal cell elastic straining between RE3+ and oxygen vacancy, and the system has the least association enthalpy, thus the oxide Ce-5.2 Dy-0.8 MoO15-delta exhibits a higher conductivity (7.02 x 10(-3) S/cm) and lower activation energy (1.056 eV) compared to the other doped compounds.

Synthesis, characterization and electrical properties of solid state electrolyte materials La2-xCaxMo1.7W0.3O9-delta (0 <= x <= 0.2)

The new compounds La2-xCaxMo1.7W0.3O9-delta (0 <= x <= 0.2) in which La3+ substituted with Ca2+ were synthesized by dry-chemistry techniques based on the oxygen Ionic conductor La2Mo1.7W0.3O9. The new series were characterized by X-ray Diffraction (XRD), Raman and X-ray Photoelectron Spectroscopy (XPS) and the electrical conductivity of samples were investigated by AC impedance spectroscopy. The lattice parameters were reduced due to the smaller atomic radius of the Ca2+ compared with that of the La3+. Furthermore, Additional oxygen vacancies were introduced into La2Mo1.7W0.3O9 lattice by substitution, and then the oxygen ionic conductivity was increased. At 550 degrees C, the conductivity increased 89.9%, that is, from 0.79 x 10(-4) S center dot cm(-1) (x=0) to 1.5 X 10(-4)S center dot cm(-1) (x=0.16, 0.2).

Synthesis, structural characterization and electrical property of new oxide ion conductors: La3MMo2O12 (M = In, Ga and Al)

New series of oxides, La3MMo2O12 (M = In, Ga and Al), have been prepared by the solid-state reaction. The composition and elemental distribution were analyzed by the energy-dispersive X-ray (EDX) analysis. As determined by the X-ray diffraction (XRD), these compounds have similar crystal structures that can be indexed on a monoclinic cell at room temperature. AC impedance spectra and the DC electrical conductivity measurements in various atmospheres indicate that they are oxide ion conductors with ionic conductivities between 10(-2) and 10(-3) S/cm at 800 degrees C. The conductivity decreases in the order of La3GaMo2O12 > La3AlMo2O12 > La3InMo2O12, implying that the effect of cell volume and polarization associated with In3+, Ga3+ and Al3+ play an important role in the anion transport of these materials. The reversible phase transition was observed in all these compounds as confirmed by the differential thermal analysis (DTA) and dilatometric measurements.

Synthesis, structural and electrical characterizations of Sr2Fe1-xMxNbO6 (M = Zn and Cu) with double perovskite structure

Sr2Fe1-xZnxNbO6-x/2 (0 <= x <= 0.5) and Sr2Fe1-xCuxNbO6-x/2 (0.01 <= x <= 0.05) with the double perovskite structure have been synthesized. The crystal structures at room temperature were determined from Rietveld refinements of X-ray powder diffraction data. The plots of the imaginary parts of the impedance spectrum, Z '', and the electric modulus, M '', versus log (frequency), possess maxima for both curves separated by less than a half decade in frequency with associated capacities of 2 nF. The enhancement of the overall conductivity Of Sr2Fe1-xMxNbO6-x/2 (M = Cu and Zn) is observed, as increases from 2.48 (3) x 10(-4) S/cm for Sr2FeNbO6 to 3.82 (5) x 10(-3) S/cm for Sr2Fe0.8Zn0.2NbO5.9 at 673 K. Sr2Fe0.8Zn0.2NbO5.9 is chemically stable under the oxygen partial pressure from 1 atm to 10(-22) atm at 873 K. The p and n-type electronic conductions are dominant under oxidizing and reducing conditions, respectively, suggesting a small-polaron hopping mechanism of electronic conduction.

Synthesis, characterization and electrical properties of the new solid electrolyte materials Ce6-xErxMoO15-delta (0.0 < x < 1.5)

A new series of oxides, Ce6-xErxMoO15-delta (0.0 less than or equal to x less than or equal to 1.5), was synthesized using wet-chemistry techniques. The precursors and resultant oxide powders were characterized by differential thermal analysis/thermogravimetry, x-ray diffraction, and IR, Raman and x-ray photoelectron spectroscopy. The formation temperature of the powders was found to be as low as 350degreesC. Ce6-xErxMoO15-delta crystallized to a fluorite-related cubic structure. The electrical conductivity of the samples was investigated by using ac impedance spectroscopy. This showed that the presence of Er was related to the oxygen-ion conductivity, and that the highest oxygen-ion conductivity was found in Ce6-xErxMoO15-delta (x = 0.4), ranging from 5.9 x 10(-5) S cm(-1) at 300degreesC to 1.26 x 10(-2) S cm(-1) at 700degreesC, respectively. This kind of material shows a potential application in intermediate-temperature solid oxide fuel cells.

Sol-gel synthesis and electrical properties of ceria-based solid electrolytes

A series of solid electrolytes (Ce0.8RE0.2)(1-x)MxO2-delta(RE: Rare earth, M: Alkali earth) were prepared by sol-gel methods. XRD indicated that a pure fluorite phase was formed at 800 degrees C. The synthesis temperature by the sol-gel methods was about 700 degrees C lower than by the traditional ceramic method. The electrical conductivity and impedance spectra were measured. XPS showed that the oxygen vacancy increased obviously by doping MO, thus, resulting in the increase of the oxygen ionic transport number and conductivity. The performance of ceria-based solid electrolyte was improved. The effects of RE2O3 and MO on the electrical properties were discussed. The conductivity and the oxygen ionic transport number of (Ce0.8Sm0.2)(1-0.05)Ca0.05O2-delta is 0.126 S.cm(-1) and 0.99 at 800 degrees C, respectively.

Electrical characterization of metal-oxide-polymer devices for non-volatile memory applications

The objective of this thesis is to study the properties of resistive switching effect based on bistable resistive memory which is fabricated in the form of Al2O3/polymer diodes and to contribute to the elucidation of resistive switching mechanisms. Resistive memories were characterized using a variety of electrical techniques, including current-voltage measurements, small-signal impedance, and electrical noise based techniques. All the measurements were carried out over a large temperature range. Fast voltage ramps were used to elucidate the dynamic response of the memory to rapid varying electric fields. The temperature dependence of the current provided insight into the role of trapped charges in resistive switching. The analysis of fast current fluctuations using electric noise techniques contributed to the elucidation of the kinetics involved in filament formation/rupture, the filament size and correspondent current capabilities. The results reported in this thesis provide insight into a number of issues namely: (i) The fundamental limitations on the speed of operation of a bi-layer resistive memory are the time and voltage dependences of the switch-on mechanism. (ii) The results explain the wide spread in switching times reported in the literature and the apparently anomalous behaviour of the high conductance state namely the disappearance of the negative differential resistance region at high voltage scan rates which is commonly attributed to a “dead time” phenomenon which had remained elusive since it was first reported in the ‘60s. (iii) Assuming that the current is filamentary, Comsol simulations were performed and used to explain the observed dynamic properties of the current-voltage characteristics. Furthermore, the simulations suggest that filaments can interact with each other. (iv) The current-voltage characteristics have been studied as a function of temperature. The findings indicate that creation and annihilation of filaments is controlled by filling and neutralizing traps localized at the oxide/polymer interface. (v) Resistive switching was also studied in small-molecule OLEDs. It was shown that the degradation that leads to a loss of light output during operation is caused by the presence of a resistive switching layer. A diagnostic tool that predicts premature failure of OLEDs was devised and proposed. Resistive switching is a property of oxides. These layers can grow in a number of devices including, organic light emitting diodes (OLEDs), spin-valve transistors and photovoltaic devices fabricated in different types of material. Under strong electric fields the oxides can undergo dielectric breakdown and become resistive switching layers. Resistive switching strongly modifies the charge injection causing a number of deleterious effects and eventually device failure. In this respect the findings in this thesis are relevant to understand reliability issues in devices across a very broad field.

Application of genetic algorithms in the design of an electrical potential of fractional order

Fractional calculus (FC) is currently being applied in many areas of science and technology. In fact, this mathematical concept helps the researches to have a deeper insight about several phenomena that integer order models overlook. Genetic algorithms (GA) are an important tool to solve optimization problems that occur in engineering. This methodology applies the concepts that describe biological evolution to obtain optimal solution in many different applications. In this line of thought, in this work we use the FC and the GA concepts to implement the electrical fractional order potential. The performance of the GA scheme, and the convergence of the resulting approximation, are analyzed. The results are analyzed for different number of charges and several fractional orders.

Optical and electrical characterization of samaria-doped ceria

Ce(0.8)SM(0.2)O(1.9) and CeO(2) nanomaterials were prepared by a solution technique to produce an ultrafine particulate material with high sinterability. In this work, the structural characteristics, the photoluminescent behavior and the ionic conductivity of the synthesized materials are focused. The thermally decomposed material consists of less than 10 nm in diameter nanoparticles. The Raman spectrum of pure CeO(2) consists of a single triple degenerate F(2g) model characteristic of the fluorite-like structure. The full width at half maximum of this band decreases linearly with increasing calcination temperature. The photoluminescence spectra show a broadened emission band assigned to the ligand-to-metal charge-transfer states O -> Ce(4+). The emission spectra of the Ce(0.8)Sm(0.2)O(1.9) specimens present narrow bands arising from the 4G(5/2) -> (6)H(J) transitions (J = 5/2, 7/2, 9/2 and 11/2) of Sm(3+) ion due to the efficient energy transfer from the O -> Ce(4+) transitions to the emitter 4G(5/2) level. The ionic conductivity of sintered specimens shows a significant dependence on density. (C) 2009 Elsevier B.V. All rights reserved.

Electrical characterization of new electrochromic devices

Electrochromic devices change their color and optical properties with applied voltage. A new symmetrical electrochromic configuration was constructed in previous works, where PEDOT acted as electrochromic layer or as counter electrode layer, depending on the polarity of the applied voltage. Devices of around 500mm2 and switching voltages from 0,5V to 2V are used in this work. Measured electrochemical impedance is fitted to an equivalent circuit based on a Randles cell, with Warburg impedance simulating ionic diffusion at low frequencies. Voltage dependence is analyzed for the first time in this kind of devices. Results show homogeneity problems in the contact layers, not seen in normal operation, and the voltage dependence on some construction parameters. This will be used to improve the devices construction, but improvements in the equivalent circuit should also be made. The proposed equivalent circuit is not valid after the redox reaction, from 1.5 to 2V.

Electrical characterization of poly(amide-imide) for application in organic field effect devices

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Generating VHDL-AMS models of digital-to-analogue converters from MATLAB (R)/SIMULINK (R)

Today, the trend within the electronics industry is for the use of rapid and advanced simulation methodologies in association with synthesis toolsets. This paper presents an approach developed to support mixed-signal circuit design and analysis. The methodology proposed shows a novel approach to the problem of developing behvioural model descriptions of mixed-signal circuit topologies, by construction of a set of subsystems, that supports the automated mapping of MATLAB (R)/SINIULINK (R) models to structural VHDL-AMS descriptions. The tool developed, named (MSSV)-S-2, reads a SIMULINK (R) model file and translates it to a structural VHDL-AMS code. It also creates the file structure required to simulate the translated model in the SystemVision (TM). To validate the methodology and the developed program, the DAC08, AD7524 and AD5450 data converters were studied and initially modelled in MATLAB (R)/SIMULINK (R). The VHDL-AMS code generated automatically by (MSSV)-S-2, (MATLAB (R)/SIMULINK (R) to SystemVision (TM)), was then simulated in the SystemVision (TM). The simulation results show that the proposed approach, which is based on VHDL-AMS descriptions of the original model library elements, allows for the behavioural level simulation of complex mixed-signal circuits.

Signaling pathways associated with the expression of inflammatory mediators activated during the course of two models of experimental periodontitis

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Electrical conductivity of silicate glasses with tetravalent cations substituting Si

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Dependence of the nonlinear electrical behavior of SnO2-based varistors on Cr2O3 addition

Tin dioxide varistors doped with Coo, ZnO, Ta2O5 and Cr2O3 were prepared by the mixed oxide method. Temperature dependent impedance spectroscopy revealed two different activation energies, one at low frequencies and the other at high frequencies. These activation energies were associated with the adsorption and reaction of O-2 species at the grain boundary interface. We show that Cr2O3 improves the varistor properties, generating sites for the adsorption of O' and O at the grain boundary region. The O' and O defects are truly responsible for the barrier formation at the grain boundary interface. (c) 2005 Elsevier Ltd and Techna Group S.r.l. All rights reserved.