Tunable and multiple-wavelengths/temporal output from gain-switched diode laser and a four Bragg-grating fiber

The spectral narrowing and selective tuning of picosecond pulse outputs from gain-switched diode laser and a four Bragg-grating fiber, were investigated. The fiber used under investigation was designed to provide spectral narrowing and multiple wavelength/temporal output. The maximum transmission out of each of the four output fibers was ∼7.5 mW, for a current of 180 mA. The results show that an output of any combination of multiple wavelengths is only produced at modulation frequencies which satisfy resonant conditions for all cavity arms simultaneously.

Spectrally controlled, picosecond pulse generation from an InGaN violet diode laser

Self-seeded, gain-switched operation of an InGaN multi-quantum-well diode laser is reported for the first time. Narrow-line, wavelength-tunable, picosecond pulses have been generated from a standard, uncoated diode laser in an external cavity.

Near-transform-limited picosecond pulses from a gain-switched InGaAs diode laser with fiber Bragg gratings

We have generated near-transform-limited picosecond pulses(ΔτΔν≈0.45) from a gain-switched diode laser using periodic and chirped fiber Bragg gratings. This configuration reduced the spectral bandwidth from 11 to 0.08 nm and the pulse duration was reduced, from 30 to<18 ps. Average and peak powers of 27 and 770 mW, respectively, were obtained.

Clinical and microbiological evaluation of high intensity diode laser adjutant to non-surgical periodontal treatment: a 6-month clinical trial

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

5.5W CWYb3+ : Y2O3 ceramic laser pumped with 970 nm laser diode

CW laser output has been demonstrated for polycrystalline transparent 10 at.% Yb3+-doped Y2O3 ceramics. End-pumped with 970 nm laser diode, a maximum output power of 5.5 W has been obtained with absorbed pump power of 31.1 W. The slope efficiency is 25% while the threshold pump power is 5.6 W. Saturation is not observed in our experiments, indicating higher laser output can be expected with higher pump power. (C) 2004 Elsevier B.V. All rights reserved.

Diode-pumped Yb : YAG ceramic laser

Transparent polycrystalline Yb:YAG ceramics were fabricated by solid-state reactive sintering a mixture of commercial Al2O3, Y2O3, and Yb2O3 powders. The powders were mixed in ethanol and doped with 0.5 wt% tetraethoxysilane, dried, and pressed. Pressed samples were sintered at 1730 degrees C in vacuum. Transparent fully dense samples with grain sizes of several micrometers were obtained. The phase from 1500 degrees to 1700 degrees C was important for the grain growth, in which the grains grew quickly and a mass of pores were eliminated from the body of the sample. Annealing was an important step to remove the vacancies of oxygen and transform Yb2+ to Yb3+. The 1 at.% Yb:YAG ceramic sample was pumped by a diode laser to study the laser properties. The maximum output power of 1.02 W was obtained with a slope efficiency of 25% at 1030 nm. The size of the lasering sample was 4 mm x 4 mm x 3 mm.

The junction temperature and forward voltage relationship of GaN-based laser diode

In GaAs-based light-emitting diode (LED) or laser diode (LD), the forward voltage (V) will decrease linearly with the increasing junction temperature (T). This can be used as a convenient method to measure the junction temperature. In GaN-based LED, the relationship is linear too. But in GaN-based LD, the acceptor M (g) in p-GaN material can not ionize completely at-room temperature, and the carrier density will change with temperature. But we find finally that, this change won't lead to a nonlinear relationship of V-T. Our experiments show that it is Linear too.

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I'Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.

Subtraction of scattering parameters for small-signal modulation characteristics of laser diode

An extended subtraction method of scattering parameters for characterizing laser diode is proposed in this paper. The intrinsic response is extracted from the measured transmission coefficients of laser diode, and the parasitics of packaging net-work laser chip are determined from the measured reflection coefficient of laser diode simultaneously. It is shown that the theories agree well with the experimental results.

Q-switched and mode-locked diode-pumped Nd : GdVO4 laser with low temperature GaAs saturable absorber

Low temperature GaAs (LT-GaAs) was successfully grown at the temperature of 550 degrees C by metal organic vapor phase epitaxy on a semi-insular GaAs substrate. With such an absorber as well as an output coupler we obtain Q-switched mode-locked (QML) 1064 nm Nd:GdVO4 laser pumped by diode laser with high repetition rate, formed with a simple flat-flat cavity. The repetition rate of the Q-switched envelope increased from 100 to 660 kHz as the pump power increased from 2.28 to 7.29 W. The mode-locked pulses inside the Q-switched pulse envelope had a repetition rate of similar to 1.36 GHz. A maximum average output power of 953 mW was obtained. The dependence of the operational parameters on the pump power was also investigated experimentally. (C) 2005 Elsevier B.V. All rights reserved.

Passive Q-switching of diode-pumped Yb:YAG microchip laser with ion-implanted GaAs

We reported a passive Q-switched diode laser pumped Yb:YAG microchip laser with an ion-implanted semi-insulating GaAs wafer. The wafer was implanted with 400-keV As^(+) in the concentration of 10^(16) ions/cm^(2). To decrease the non-saturable loss, we annealed the ion-implanted GaAs at 500 oC for 5 minutes and coated both sides of the ion-implanted GaAs with antireflection (AR) and highreflection (HR) films, respectively. Using GaAs wafer as an absorber and an output coupler, we obtained 52-ns pulse duration of single pulse.

Influence of prior 810-nm-diode intracanal laser irradiation on hydrophilic resin-based sealer obturation

Dentin wall structural changes caused by 810-nm-diode laser irradiation can influence the sealing ability of endodontic sealers. The objective of this study was to evaluate the apical leakage of AH Plus and RealSeal resin-based sealers with and without prior diode laser irradiation. Fifty-two single-rooted mandibular premolars were prepared and divided into 4 groups, according to the endodontic sealer used and the use or non-use of laser irradiation. The protocol for laser irradiation was 2.5W, continuous wave in scanning mode, with 4 exposures per tooth. After sample preparation, apical leakage of 50% ammoniacal silver nitrate impregnation was analyzed. When the teeth were not exposed to irradiation, the Real Seal sealer achieved the highest scores, showing the least leakage, with significant differences at the 5% level (Kruskal-Wallis test, p = 0.0004), compared with AH Plus. When the teeth were exposed to the 810-nm-diode laser irradiation, the sealing ability of AH Plus sealer was improved (p = 0282). In the Real Seal groups, the intracanal laser irradiation did not interfere with the leakage index, showing similar results in the GRS and GRSd groups (p = 0.1009).

Influence of prior 810-nm-diode intracanal laser irradiation on hydrophilic resin-based sealer obturation

Dentin wall structural changes caused by 810-nm-diode laser irradiation can influence the sealing ability of endodontic sealers. The objective of this study was to evaluate the apical leakage of AH Plus and RealSeal resin-based sealers with and without prior diode laser irradiation. Fifty-two single-rooted mandibular premolars were prepared and divided into 4 groups, according to the endodontic sealer used and the use or non-use of laser irradiation. The protocol for laser irradiation was 2.5W, continuous wave in scanning mode, with 4 exposures per tooth. After sample preparation, apical leakage of 50% ammoniacal silver nitrate impregnation was analyzed. When the teeth were not exposed to irradiation, the Real Seal sealer achieved the highest scores, showing the least leakage, with significant differences at the 5% level (Kruskal-Wallis test, p = 0.0004), compared with AH Plus. When the teeth were exposed to the 810-nm-diode laser irradiation, the sealing ability of AH Plus sealer was improved (p = 0282). In the Real Seal groups, the intracanal laser irradiation did not interfere with the leakage index, showing similar results in the GRS and GRSd groups (p = 0.1009).

THz emission from quantum dot-based THz antennas pumped by a tunable quantum-dot laser diode

The THz optoelectronics field is now maturing and semiconductor-based THz antenna devices are becoming more widely implemented as analytical tools in spectroscopy and imaging. Photoconductive (PC) THz switches/antennas are driven optically typically using either an ultrashort-pulse laser or an optical signal composed of two simultaneous longitudinal wavelengths which are beat together in the PC material at a THz difference frequency. This allows the generation of (photo)carrier pairs which are then captured over ultrashort timescales usually by defects and trapping sites throughout the active material lattice. Defect-implanted PC materials with relatively high bandgap energy are typically used and many parameters such as carrier mobility and PC gain are greatly compromised. This paper demonstrates the implementation of low bandgap energy InAs quantum dots (QDs) embedded in standard crystalline GaAs as both the PC medium and the ultrafast capture mechanism in a PC THz antenna. This semiconductor structure is grown using standard MBE methods and allows the device to be optically driven efficiently at wavelengths up to ~1.3 µm, in this case by a single tunable dual-mode QD diode laser.