Low-Temperature Sputtering Deposition of Aligned Polycrystalline CaCu3Ti4O12 Nanorods

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Nanocrystalline GaN and GaN:H films grown by RF-magnetron sputtering

The structural and optical properties of nanocrystalline GaN and GaN:H films grown by RF-tnagnetron sputtering are focused here. The films were grown using a Ga target and a variety of deposition parameters (N 2/H 2/Arflow rates, RF power, and substrate temperatures). Si (100) and fused silica substrates were used at relatively low temperatures (T s ≤ 420K). The main effects resulting from the deposition parameters variations on the films properties were related to the presence of hydrogen in the plasma. The X-ray diffraction analysis indicates that the grain sizes (∼15nm) and the crystallized volume fraction significantly decrease when hydrogen is present in the plasma. The optical absorption experiments indicate that the hydrogenated films have absorption edges very similar to that of GaN single crystal films reported in the literature, while the non-hydrogenated samples present larger absorption tails encroaching into the gap energies.

Preparação de filmes policristalinos de GaN pela técnica de sputtering reativo a baixas temperaturas de substrato

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Análise morfológica de filmes finos de óxido de zinco

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermoelectric properties of TiNiSn and Zr 0.5 Hf 0.5 NiSn thin films and superlattices with reduced thermal conductivities

Durch steigende Energiekosten und erhöhte CO2 Emission ist die Forschung an thermoelektrischen (TE) Materialien in den Fokus gerückt. Die Eignung eines Materials für die Verwendung in einem TE Modul ist verknüpft mit der Gütezahl ZT und entspricht α2σTκ-1 (Seebeck Koeffizient α, Leitfähigkeit σ, Temperatur T und thermische Leitfähigkeit κ). Ohne den Leistungsfaktor α2σ zu verändern, soll ZT durch Senkung der thermischen Leitfähigkeit mittels Nanostrukturierung angehoben werden.rnBis heute sind die TE Eigenschaften von den makroskopischen halb-Heusler Materialen TiNiSn und Zr0.5Hf0.5NiSn ausgiebig erforscht worden. Mit Hilfe von dc Magnetron-Sputterdeposition wurden nun erstmals halbleitende TiNiSn und Zr0.5Hf0.5NiSn Schichten hergestellt. Auf MgO (100) Substraten sind stark texturierte polykristalline Schichten bei Substrattemperaturen von 450°C abgeschieden worden. Senkrecht zur Oberfläche haben sich Korngrößen von 55 nm feststellen lassen. Diese haben Halbwertsbreiten bei Rockingkurven von unter 1° aufgewiesen. Strukturanalysen sind mit Hilfe von Röntgenbeugungsexperimenten (XRD) durchgeführt worden. Durch Wachstumsraten von 1 nms 1 konnten in kürzester Zeit Filmdicken von mehr als einem µm hergestellt werden. TiNiSn zeigte den höchsten Leistungsfaktor von 0.4 mWK 2m 1 (550 K). Zusätzlich wurde bei Raumtemperatur mit Hilfe der differentiellen 3ω Methode eine thermische Leitfähigkeit von 2.8 Wm 1K 1 bestimmt. Es ist bekannt, dass die thermische Leitfähigkeit mit der Variation von Massen abnimmt. Weil zudem angenommen wird, dass sie durch Grenzflächenstreuung von Phononen ebenfalls reduziert wird, wurden Übergitter hergestellt. Dabei wurden TiNiSn und Zr0.5Hf0.5NiSn nacheinander abgeschieden. Die sehr hohe Kristallqualität der Übergitter mit ihren scharfen Grenzflächen konnte durch Satellitenpeaks und Transmissionsmikroskopie (STEM) nachgewiesen werden. Für ein Übergitter mit einer Periodizität von 21 nm (TiNiSn und Zr0.5Hf0.5NiSn jeweils 10.5 nm) ist bei einer Temperatur von 550 K ein Leistungsfaktor von 0.77 mWK 2m 1 nachgewiesen worden (α = 80 µVK 1; σ = 8.2 µΩm). Ein Übergitter mit der Periodizität von 8 nm hat senkrecht zu den Grenzflächen eine thermische Leitfähigkeit von 1 Wm 1K 1 aufgewiesen. Damit hat sich die Reduzierung der thermischen Leitfähigkeit durch die halb-Heusler Übergitter bestätigt. Durch die isoelektronischen Eigenschaften von Titan, Zirkonium und Hafnium wird angenommen, dass die elektrische Bandstruktur und damit der Leistungsfaktor senkrecht zu den Grenzflächen nur schwach beeinflusst wird.rn

Estimation of vertical groundwater fluxes into a streambed through continuous temperature profile monitoring and the relationship of groundwater fluxes to coaster brook trout spawning habitat

We hypothesized that the spatial distribution of groundwater inflows through river bottom sediments is a critical factor associated with the selection of coaster brook trout (a life history variant of Salvelinus fontinalis,) spawning sites. An 80-m reach of the Salmon Trout River, in the Huron Mountains of the upper peninsula of Michigan, was selected to test the hypothesis based on long-term documentation of coaster brook trout spawning at this site. Throughout this site, the river is relatively similar along its length with regard to stream channel and substrate features. A monitoring well system consisting of an array of 27 wells was installed to measure subsurface temperatures underneath the riverbed over a 13-month period. The monitoring well locations were separated into areas where spawning has and has not been observed. Over 200,000 total temperature measurements were collected from 5 depths within each of the 27 monitoring wells. Temperatures within the substrate at the spawning area were generally cooler and less variable than river temperatures. Substrate temperatures in the non-spawning area were generally warmer, more variable, and closely tracked temporal variations in river temperatures. Temperature data were inverted to obtain subsurface groundwater velocities using a numerical approximation of the heat transfer equation. Approximately 45,000 estimates of groundwater velocities were obtained. Estimated velocities in the spawning and non-spawning areas confirmed that groundwater velocities in the spawning area were primarily in the upward direction, and were generally greater in magnitude than velocities in the non-spawning area. In the non-spawning area there was a greater occurrence of velocities in the downward direction, and velocity estimates were generally lesser in magnitude than in the spawning area. Both the temperature and velocity results confirm the hypothesis that spawning sites correspond to areas of significant groundwater influx to the river bed.

The study of ultra-low energy deposition of hydrogenated amorphous carbon thin films

This thesis is dedicated to the production and analysis of thin hydrogenated amorphous carbon films. A cascaded arc plasma source was used to produce a high density plasma of hydrocarbon radicals that deposited on a substrate at ultra low energies. The work was intended to create a better understanding of the mechanisms responsible for the film formation, by an extensive analysis on the properties of the films in correlation with the conditions used in the plasma cell. Two different precursors were used: methane and acetylene. They revealed a very different picture for the mechanism of film formation and properties. Methane was less successful, and the films formed were soft, with poor adhesion to the substrate and decomposing with time. Acetylene was the better option, and the films formed in this case were harder, with better adhesion to the substrate and stable over time. The plasma parameters could be varied to change the character of films, from polymer-like to diamond-like carbon. Films deposited from methane were grown at low deposition rates, which increased with the increase in process pressure and source power and decreased with the increase in substrate temperature and in hydrogen fraction in the carrier gas. The films had similar hydrogen content, sp3 fractions, average roughness (Ra) and low hardness. Above a deposition temperature of 350°C graphitization occurred - an increase in the sp2 fraction. A deposition mechanism was proposed, based upon the reaction product of the dissociative recombination of CH4+. There were small differences between the chemistries in the plasma at low and high precursor flow rates and low and high substrate temperatures; all experimental conditions led to formation of films that were either polymer-like, soft amorphous hydrogenated carbon or graphitic-like in structure. Films deposited from acetylene were grown at much higher deposition rates on different substrates (silicon, glass and plastics). The film quality increased noticeably with the increase of relative acetylene to argon flow rate, up to a certain value, where saturation occurred. With the increase in substrate temperature and the lowering of the acetylene injection ring position further improvements in film quality were achieved. The deposition process was scaled up to large area (5 x 5 cm) substrates in the later stages of the project. A deposition mechanism was proposed, based upon the reaction products of the dissociative recombination of C2H2 +. There were large differences between the chemistry in the plasma at low and medium/high precursor flow rates. This corresponded to large differences in film properties from low to medium flow rates, when films changed their character from polymer-like to diamond-like, whereas the differences between films deposited at medium and high precursor flow rates were small. Modelling of the film growth on silicon substrates was initiated and it explained the formation of sp2 and sp3 bonds at these very low energies. However, further improvements to the model are needed.

Properties of ultra fast deposited diamond-like hydrogenated carbon films

Hydrogenated amorphous carbon films with diamond like structures have been formed on different substrates at very low energies and temperatures by a plasma enhanced chemical vapor deposition process employing acetylene as the precursor gas. The plasma source was of a cascaded arc type with Ar as carrier gas. The films were grown at very high deposition rates. Deposition on Si, glass and plastic substrates has been studied and the films characterized in terms of sp3 content, roughness, hardness, adhesion and optical properties. Deposition rates up to 20 nm/s have been achieved at substrate temperatures below 100°C. The typical sp3 content of 60-75% in the films was determined by X-ray generated Auger electron spectroscopy. Hardness, reduced modulus and adhesion were measured using a MicroMaterials Nano Test Indenter/Scratch tester. Hardness was found to vary from 4 to 13 GPa depending on deposition conditions. Adhesion was significantly influenced by the substrate temperature and in situ DC cleaning. Hydrogen content in the film was measured by a combination of the Fourier transform infrared and Rutherford backscattering techniques. Advantages of these films are: low ion energy and deposition temperature, very high deposition rates, low capital cost of the equipment and the possibility of film properties being tailored according to the desired application.

A Comparati ve Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

A Comparative Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

A Comparati ve Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

A Comparative Study of Mechanical and Tribological Properties of AISI-304 and AISI-316 Submitted to Glow Discharge Nitriding

Mechanical and tribological properties of AISI 304 and AISI 316 stainless steels submitted to glow discharge ion nitriding are reported. The atmosphere was 20:80 - N2:H2 with substrate temperatures ranging from 300 to 500 °C. Treatment at 300 °C produced expanded austenite (γN) in both steels. Increasing the temperature, the phases γ′-Fe4N and ε- Fe2+xN were present and the latter is the major phase for AISI 304. At 500 °C, the CrN phase was also identified in both steels. Hardnesses of about 13-14 GPa at near surface regions were obtained in both steels. Moreover, AISI 316 nitrided at 500 °C has the deepest hard layer. Tribological tests showed that wear can be reduced by up to a factor of six after the nitriding processes, even for a working temperature of 300 °C. The profiles during and after nanoscratch tests did not reveal significant differences after nitriding processes in both steels.

Core-level photoemission investigations of the CDTE(100) and INSB(100) surface and interfacial structures

Photoemission techniques, utilizing a synchrotron light source, were used to analyze the clean (100) surfaces of the zinc-blende semiconductor materials CdTe and InSb. Several interfacial systems involving the surfaces of these materials were also studied, including the CdTe(lOO)-Ag interface, the CdTe(lOO)-Sb system, and the InSb(lOO)-Sn interface. High-energy electron diffraction was also employed to acquire information about of surface structure. A one-domain (2xl) structure was observed for the CdTe(lOO) surface. Analysis of photoemission spectra of the Cd 4d core level for this surface structure revealed two components resulting from Cd surface atoms. The total intensity of these components accounts for a full monolayer of Cd atoms on the surface. A structural model is discussed commensurate with these results. Photoemission spectra of the Cd and Te 4d core levels indicate that Ag or Sb deposited on the CdTe(l00)-(2xl) surface at room temperature do not bound strongly to the surface Cd atoms. The room temperature growth characteristics for these two elements on the CdTe(lOO)-(2xl) are discussed. The growth at elevated substrate temperatures was also studied for Sb deposition. The InSb(lOO) surface differed from the CdTe(lOO) surface. Using molecular beam epitaxy, several structures could be generated for the InSb(lOO) surface, including a c(8x2), a c(4x4), an asymmetric (lx3), a symmetric (lx3), and a (lxl). Analysis of photoemission intensities and line shapes indicates that the c(4x4) surface is terminated with 1-3/4 monolayers of Sb atoms. The c(8x2) surface is found to be terminated with 3/4 monolayer of In atoms. Structural models for both of these surfaces are proposed based upon the photoemission results and upon models of the similar GaAs(lOO) structures. The room temperature growth characteristics of grey Sn on the lnSb(lOO)-c(4x4) and InSb(l00)-c(8x2) surfaces were studied with photoemission. The discontinuity in the valence band maximum for this semiconductor heterojunction system is measured to be 0.40 eV, independent of the starting surface structure and stoichiometry. This result is reconciled with theoretical predictions for heterostructure behavior.

Patterns of substrate utilization during long-term incubations at different temperatures

Microorganisms play key roles in biogeochemical cycling by facilitating the release of nutrients from organic compounds. In doing so, microbial communities use different organic substrates that yield different amounts of energy for maintenance and growth of the community. Carbon utilization efficiency (CUE) is a measure of the efficiency with which substrate carbon is metabolized versus mineralized by the microbial biomass. In the face of global change, we wanted to know how temperature affected the efficiency by which the soil microbial community utilized an added labile substrate, and to determine the effect of labile soil carbon depletion (through increasing duration of incubation) on the community's ability to respond to an added substrate. Cellobiose was added to soil samples as a model compound at several times over the course of a long-term incubation experiment to measure the amount of carbon assimilated or lost as CO2 respiration. Results indicated that in all cases, the time required for the microbial community to take up the added substrate increased as incubation time prior to substrate addition increased. However, the CUE was not affected by incubation time. Increased temperature generally decreased CUE, thus the microbial community was more efficient at 15 degrees C than at 25 degrees C. These results indicate that at warmer temperatures microbial communities may release more CO2 per unit of assimilated carbon. Current climate-carbon models have a fixed CUE to predict how much CO2 will be released as soil organic matter is decomposed. Based on our findings, this assumption may be incorrect due to variation of CUE with changing temperature. (c) 2008 Elsevier Ltd. All rights reserved.

Visible light-driven cross-coupling reactions at lower temperatures using a photocatalyst of palladium and gold alloy nanoparticles

Palladium (Pd)-catalyzed cross-coupling reactions are among the most important methods in organic synthesis. We report the discovery of highly efficient and green photocatalytic processes by which cross-coupling reactions, including Sonogashira, Stille, Hiyama, Ullmann, and Buchwald–Hartwig reactions, can be driven with visible light at temperatures slightly above room temperature using alloy nanoparticles of gold and Pd on zirconium oxide, thus achieving high yields. The alloy nanoparticles absorb visible light, and their conduction electrons gain energy, which is available at the surface Pd sites. Results of the density functional theory calculations indicate that transfer of the light excited electrons from the nanoparticle surface to the reactant molecules adsorbed on the nanoparticle surface activates the reactants. When the light intensity was increased, a higher reaction rate was observed, because of the increased population of photoexcited electrons. The irradiation wavelength also has an important impact on the reaction rates. Ultraviolet irradiation can drive some reactions with the chlorobenzene substrate, while visible light irradiation failed to, and substantially improve the yields of the reactions with the bromobenzene substrate. The discovery reveals the possibility of using low-energy and -density sources such as sunlight to drive chemical transformations.