Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate

We report the growth of well-ordered InAs QD chains by molecular beam epitaxy system. In order to analyze and extend the results of our experiment, a detailed kinetic Monte Carlo simulation is developed to investigate the effects of different growth conditions to the selective growth of InAs quantum dots (QDs). We find that growth temperature plays a more important role than growth rate in the spatial ordering of the QDs. We also investigate the effect of periodic stress on the shape of QDs in simulation. The simulation results are in good qualitative agreement with our experiment. (c) 2006 Elsevier Ltd. All rights reserved.

Kinetic Monte Carlo simulation of semiconductor quantum dot growth

Performing an event-based continuous kinetic Monte Carlo (KMC) simulation, We investigate the growth conditions which are important to form semiconductor quantum dot (QD) in molecular beam epitaxy (MBE) system. The simulation results provide a detailed characterization of the atomic kinetic effects. The KMC simulation is also used to explore the effects of periodic strain to the epitaxy growth of QD. The simulation results are in well qualitative agreement with experiments.

Monte Carlo simulation of the neutron detection wall at RIBLL II in HIRFL-CSR

With the construction of the new Radioactive Ion Beam Line in Lanzhou (RIBLL II) which connects the CSRm and the CSRe, an experimental setup for physics research is highly required. A large area neutron detection wall is the main part of the setup. This paper introduced the detection principle of the neutron detection wall and the Monte-Carlo simulation of its design under the environment of the Geant4 toolkit. We presented the final design with the optimized parameters and the performance of the wall.

基于GEANT4的CsI(Tl)闪烁体探测器的Monte Carlo模拟；Monte Carlo Simulation of CsI(Tl) Scintillator Detector with GEANT4 ToolKit

对闪烁光在晶体内的传输以及光电子倍增过程进行了建模,基于GEANT4软件包对CsI(T1)闪烁体探测器进行了蒙特卡罗模拟,得到了不同形状、尺寸和包装的CsI(Tl)晶体测量γ射线的能谱。对比模拟和测试结果,两者得到了很好的符合,从而验证了模拟参数的合理性和可靠性。该模拟程序的建立为闪烁体探测器的设计提供了更精确的开发工具。

Rigidity effect on phase behavior of symmetric ABA triblock copolymers: A Monte Carlo simulation

The phase behavior of symmetric ABA triblock copolymers containing a semiflexible midblock is studied by lattice Monte Carlo simulation. As the midblock evolves from a fully flexible state to a semiflexible state in terms of increase in its persistence length, different phase behaviors are observed while cooling the system from an infinite high temperature to a temperature below T-ODT (order-disorder transition temperature). Within the midblock flexibility range we studied (l(p)/N-c <= 0.105), a lamellar structure is formed at equilibrium state as the situation for fully flexible chains. The fraction of bridge chain is evaluated for the lamellar structures. We find that the increase in midblock rigidity indeed results in the increase in bridge chain fraction within the range from 44.9% to 51.8%.

Monte Carlo simulation on symmetric ABA/AB copolymer blends in confined thin films

The effects of blend composition on morphology, order-disorder transition (ODT), and chain conformation of symmetric ABA/AB copolymer blends confined between two neutral hard walls have been investigated by lattice Monte Carlo simulation. Only lamellar structure is observed in all the simulation morphologies under thermodynamic equilibrium state, which is supported by theoretical prediction. When the composition of AB diblock copolymer (phi) increases, both lamellar spacing and the corresponding ODT temperature increase, which can be attributed to the variation of conformation distribution of the diblock and the triblock copolymer chains. In addition, both diblock and triblock copolymer, chains with bridge conformation extend dramatically in the direction parallel to the surface when the system is in ordered state. Finally, the copolymer chain conformation depends strongly on both the blend composition and the incompatibility parameter chi N.

Monte Carlo simulation of the compatibility of graft copolymer compatibilized two incompatible homopolymer blends: Effect of graft structure

Compatibility of graft copolymer compatibilized two incompatible homopolymer A and B blends was simulated by using Monte Carlo method in a two-dimensional lattice model. The copolymers with various graft structures were introduced in order to study the effect of graft structure on the compatibility. Simulation results showed that incorporation of both A-g-B (A was backbone) and B-g-A (B was backbone) copolymers could much improve the compatibility of the blends. However, A-g-B copolymer was more effective to compatibilize the blend if homopolymer A formed dispersed phase. Furthermore, simulation results indicated that A-g-B copolymers tended to locate at the interface and anchor two immiscible components when the side chain is relatively long. However, most of A-g-B copolymers were likely to be dispersed into the dispersed homopolymer A phase domains if the side chains were relatively short. On the other hand, B-g-A copolymers tended to be dispersed into the matrix formed by homopolymer B. Moreover, it was found that more and more B-g-A copolymers were likely to form thin layers at the phase interface with decreasing the length of side chain.

A Monte Carlo simulation of morphology and structure for thin films of symmetric triblock copolymer after quenching and annealing

Self-assembly thin films of symmetric triblock copolymer after annealing and quenching were examined by an effective Monte Carlo simulation method. The defects in the ordered lamellae of the thin films after quenching, which were dependent on the initialization of copolymer melts, are removed in the thin films after annealing. The mean-square gyration radius and end-to-end distance of copolymer chains in the thin films after annealing are smaller than those in the thin films after quenching because of the complete relaxation of polymer during annealing. We also find that the density of A block in the region near to the surface is higher than that in the interior of the thin films. As a result, it is different from the thin films of symmetric A(n)B(n) diblock copolymer, in which surface ordering forms before the interior, that ordering phenomena occurs first in the interior region in the thin films of symmetric A(n)B(m)A(n). triblocl copolymer.