Low power consumption and high sensitivity carbon monoxide gas sensor using indium oxide nanowire.

In this paper, micro gas sensor was fabricated using indium oxide nanowire for effective gas detection and monitoring system. Indium oxide nanowire was grown using thermal CVD, and their structural properties were examined by the SEM, XRD and TEM. The electric properties for microdropped indium oxide nanowire device were measured, and gas response characteristics were examined for CO gas. Sensors showed high sensitivity and stability for CO gas. And with below 20 mw power consumption, 5 ppm CO could be detected.

A pseudo-spin model for the wall of cytoskeletal microtubule

A pseudo-spin model is intended to describe the physical dynamics of unbound electrons in the wall of cytoskeletal microtubule (MT). Due to the inherent symmetry of the structure and the electric properties in the MT, one may treat it as a one-dimensional ferroelectric system, and describe the nonlinear dynamics of dimer electric dipoles in one protofilament of the MT by virtue of the double-well potential. Consequently, the physical problem has been mapped onto the pseudo-spin system, and the mean-field approximation has been taken to get some physical results.

Síntese e caracterização de copolímeros à base de poli(metacrilato de metila) e divinilbenzeno com propriedades magnéticas

Nesta dissertação, foram sintetizados copolímeros à base de poli(metacrilato de metila) (PMMA), divinilbenzeno (DVB) com propriedades magnéticas pela técnica de polimerização em suspensão. O material utilizado para conferir propriedade magnética foi o ferro. Foi estudada a influência das variáveis reacionais para a formação de microesferas (ordem de adição das fases orgânica e aquosa e a dispersão do ferro antes e após a pré-polimerização), o efeito da concentração de ferro adicionado na polimerização, a influência da razão molar MMA/DVB na formação do copolímero, o efeito do tipo de agente de suspensão e a velocidade de agitação para a síntese dos copolímeros. Os copolímeros foram caracterizados quanto à morfologia, estabilidade térmica, teor de ferro incorporado, distribuição de tamanho de partículas, propriedades magnéticas, área superficial, volume e tamanho de poros. As análises de propriedades magnéticas mostraram que os materiais obtidos não apresentaram ciclos de histerese, estando assim próximos de um material com propriedades superparamagnéticas, com magnetização de saturação entre 8,0 e 13,0 emu/g. Os copolímeros sintetizados com velocidade de agitação 500 RPM, temperaturade 90 C, tempo de polimerização de 24h, monômeros MMA/DVB 50/50 (% molar); razão volumétrica fase orgânica/fase aquosa 1/3, diluente heptano, grau de diluição 100% apresentaram melhor controle morfológico, melhor magnetização de saturação, tamanho de partículas menores e maior tamanho de poros

First-principles prediction of the magnetism of 3d transition-metal-doped Rocksalt MgO

Using first-principles band structure methods, we have systematically studied the electronic structures, magnetic stabilities, and half-metal properties of 3d transition-metal (TM) doped Rocksalt MgO compounds TMMg3O4 (TM = V, Cr, Mn, Fe, Co, and Ni). The calculations reveal that only CrMg3O4 has a ferromagnetic stability among the six compounds, which is explained by double-exchange mechanism. The magnetic stability is affected by the doping concentration of TM if the top valance band is composed of partially occupied t(2g) states. In addition, CrMg3O4 is a half-metallic ferromagnet. The origins of half-metallic and ferromagnetic properties are explored. The Curie temperature (T-c) of CrMg3O4 is 182 K. And it is hard for CrMg3O4 to deform due to the large bulk modulus and shear modulus, so it is a promising spintronic material. Our calculations provide the first available information on the magnetic properties of 3d TM-doped MgO.

Fabrication and Characterization of High Power InGaN Blue-Violet Lasers with an Array Structure

InGaN/GaN multi-quantum-well-structure laser diodes with an array structure are successfully fabricated on sapphire substrates. The laser diode consists of four emitter stripes which share common electrodes on one laser chip. An 800-mu m-long cavity is formed by cleaving the substrate along the < 1 (1) over bar 00 >. orientation using laser scriber. The threshold current and voltage of the laser array diode are 2A and 10.5 V, respectively. A light output peak power of 12W under pulsed current injection at room temperature is achieved. We simulate the electric properties of GaN based laser diode in a co-planar structure and the results show that minimizing the difference of distances between the different ridges and the n-electrode and increasing the electrical conductivity of the n-type GaN are two effective ways to improve the uniformity of carrier distribution in emitter stripes. Two pairs of emitters on a chip are arranged to be located near the two n-electrode pads on the left and right sides, and the four stripe emitters can laser together. The laser diode shows two sharp peaks of light output at 408 and 409 nm above the threshold current. The full widths at half maximum for the parallel and perpendicular far field patterns are 8 degrees and 32 degrees, respectively.

Preparation and characterization of Si sheets by renewed SSP technique

Silicon sheets from powder (SSP) ribbons have been prepared by modified SSP technique using electronic-grade (9N purity) silicon powder. The surface morphology, crystallographic quality, composition and electric properties of the SSP ribbons were investigated by surface profiler, X-ray diffraction (XRD), scanning electron microscopy (SEM), metallurgical microscope, Auger electron spectroscopy (AES) and four-point probe apparatus, respectively. The results show that the SSP ribbon made from electronic-grade silicon powder is a suitable candidate for the substrates of crystalline silicon thin film (CSiTF) solar cells, which could meet the primary requirements of CSiTF solar cell process on the substrates, including surface smoothness, crystallographic quality, purity and electric conductivity, etc. (C) 2004 Elsevier B.V. All rights reserved.

Emitter of hetero-junction solar cells created using pulsed rapid thermal annealing

In this paper, we use a pulsed rapid thermal processing (RTP) approach to create an emitter layer of hetero-junction solar cell. The process parameters and crystallization behaviour are studied. The structural, optical and electric properties of the crystallized films are also investigated. Both the depth of PN junction and the conductivity of the emitter layer increase with the number of RTP pulses increasing. Simulation results show that efficiencies of such solar cells can exceed 15% with a lower interface recombination rate, but the highest efficiency is 11.65% in our experiments.

Hole capture barrier of self-organized InAs quantum dots

Deep level transient spectroscopy (DLTS) technique was successfully applied to characterize the electric properties of p type self-organized InAs quantum dots. The ground state energy and capture barrier energy of hole of quantum dots were measured for the first time. The energy of ground state of 2.5ML InAs quantum dots with respect to the valence band of bulk GaAs was obtained being about 0.09eV, and there was a barrier associated to the change of charge state of quantum dots. The capture barrier energy of such dots for hole was about 0.26eV. The work is very meaningful for further understanding the intrinsic properties of quantum dots.

稀土与钼复合氧化物的合成、结构和电性质研究

固体氧化物燃料电池（SOFC）被称为“二十一世纪的绿色能源”。氧化忆稳定氧化错（YSZ）是目前sOFC普遍采用的固体电解质材料。由于YSZ只有在高温时（大于1000℃）才具有较高的离子导电性，而SOFC在高温时会带来一系列技术性的问题，如机械强度的不稳定、材料的老化及各构成材料之间的相互扩散等。因此，迫切需要开发在中、低温范围内（600-800℃）具有较高离子电导率（大于10-2S．cm-l）的电解质材料。在众多的候选材料中，稀土作为基体和掺杂元素的固体电解质越来越引起人们的重视。特别是萤石型化合物CeOZ、钙钦矿型化合物LaGaO3，以及阴离子空位型化合物La2MO2O9等的研究，开阔了寻找固体电解质材料的视野。本论文主要研究稀土与钥复合氧化物的合成、结构及其电学性质，希望进一步提高现有材料的导电性能和寻找新型固体电解质材料。基于母体化合物La2Mo2O9在580℃左右有一个相变点，因为存在相变点的固体电解质在实用方面（如SOFC）有很大的局限性。我们从稀土掺杂的角度出发，对母体化合物进一步改性，稳定其高温结构相。为此，我们利用改性柠檬酸盐法合成了系列化合物La2-xRExMo2O9（RE＝Ce，Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Yb）。结果发现，只有Nd和Sm可以进入La2Mo2O9中La的格位；利用本方法合成样品的温度比用固相法低250℃左右；所合成的样品粒度分布非常均匀，并且随着Nd和Sm掺杂量的增加而变大；Nd和Sm的掺杂稳定了其高温相，电导率有所提高。从而使此类固体电解质在实用方面成为可能。合成了一种新型稀土与钥的复合氧化合物Ce6MoO15，电学性质测试发现，它是一性能优良的固体电解质材料。以此化合物为母体）进行低价金属离子的掺杂取代后发现，它们的导电性又进一步地提高，进而派生出多种固体电解质体系如Ce6-6 MoO15-δ、Ce6+x Mo1-x O15-6、Ce6Mo1-xBixO16-6以及Ce6-xAxMoO15-6。（A＝Li，Ca，Sr和Ba）等。本研究工作中主要合成了Ce6-xRExMoO16-6（RE=Pr，Nd，Sm，Gd，Tb，Dy，Ho，Er，Yb；x=0.0-6.0）等系列化合物，并对其进行了结构表征及电学性质测试。结果发现所有样品均为类莹石结构；样品的导电性起源于氧离子空位；在相同的温度下，样品电导率相当于或高于经典的固体电解质（如YSZ），并且样品的抗老化性能有所提高。所有这些实验事实证明，它们在中温区是一种高效氧离子导体，从而为此类化合物在SOFC中的应用奠定了基础。通过合成AgScMo2O8，尝试了一种钥酸盐固溶体的合成方法，即钥酸盐水溶液合成法。这种方法不需要加入有机物（如柠檬酸等）作为络合剂，而是通过钼酸根与金属离子之间的酸碱对效应直接合成。我们对此化合物的结构、电学性质进行研究后发现：此化合物在较低的温度即已完全成相；室温下，Agsco208为单斜结构，不同于AgLnMo2O8（Ln＝Y-Lu）；随着温度的升高，AgscMo2o8在485℃、539℃附近各有一个不可逆，可逆相变点出现。在可逆相变点出现的同时，伴随着其电导率有一个很大的突跃。

Phosphonate-Functionalized Polyfluorene as a Highly Water-Soluble Iron(III) Chemosensor

An anionic, phosphonate-functionalized polyfluorene, i.e., poly(9,9-bis(3'-phosphatepropyl)fluorene-alt-1,4-phenylene) sodium salt (PFPNa), has been synthesized by copolymerization of phosphonic acid-substituted 2,7-dibromofluorene and phenyldiboronic ester via direct Suzuki polycondensation reaction in DMF/water. Polymer PFPNa is highly soluble and emissive in water with a solubility of 60 mg/mL and a photoluminescence quantum yield of 75%. The absorption and fluorescence spectra of PFPNa are strongly dependent on pH value owing to the partial protonation of phosphate groups and the aggregation of the polymer chains.

Structural evolution of tensile deformed high-density polyethylene at elevated temperatures: Scanning synchrotron small- and wide-angle X-ray scattering studies

The structural evolution of an ice-quenched high-density polyethylene (HDPE) subjected to uniaxial tensile deformation at elevated temperatures was examined as a function of the imposed strains by means of combined synchrotron small-angle X-ray scattering (SAXS) and wide-angle X-ray scattering (WAXS) techniques. The data show that when stretching an isotropic sample with the spherulitic structure, intralamellar slipping of crystalline blocks was activated at small deformations, followed by a stress-induced fragmentation and recrystallization process yielding lamellar crystallites with their normal parallel to the stretching direction. Stretching of an isothermally crystallized HDPE sample at 120 degrees C exhibited changes of the SAXS diagram with strain similar to that observed for quenched HDPE elongated at room temperature, implying that the thermal stability of the crystal blocks composing the lamellae is only dependent on the crystallization temperature.

Progress in polymer solar cell

This review outlines current progresses in polymer solar cell. Compared to traditional silicon-based photovoltaic (PV) technology, the completely different principle of optoelectric response in the polymer cell results in a novel configuration of the device and more complicated photovoltaic generation process. The conception of bulk-heterojunction (BHJ) is introduced and its advantage in terms of morphology is addressed. The main aspects including the morphology of photoactive layer, which limit the efficiency and stability of polymer solar cell, are discussed in detail. The solutions to boosting up both the efficiency and stability (lifetime) of the polymer solar cell are highlighted at the end of this review.

Soluble, saturated-red-light-emitting poly(p-phenylenevinylene) containing triphenylamine units and cyano groups

A conjugated poly(p-CN-phenylenevinylene) (PCNPV) containing both electron-donating triphenylamine units and electron-withdrawing cyano groups was prepared via Knoevenagel condensation in a good yield. Gel permeation chromatography suggested that the soluble polymer had a very high weight-average molecular weight of 309,000. A bright and saturated red emission was observed under UV excitation in solution and film. Cyclic voltammetry showed that the polymer presented quasi-reversible oxidation with a relatively low potential because of the triphenylamine unit. A single-layer indium tin oxide/PCNPV/Mg-Ag device emitted a bright red light (633 nm).