Domestic microwave oven adapted for fast heat treatment of Ba0.5Sr0.5(Ti0.8Sn0.2)O-3 powders

In this work, BSTSn powders prepared by the polymeric precursor method were heat treated in a domestic microwave oven (MW) using a SiC susceptor to absorb the microwave energy and transfer the heat to the powder. The main advantage of MW is to reduce the thermal treatment time for phase crystallization. The powders were heat treated at 300 degrees C for 20 h in conventional oven, 300 degrees C for 10 min, 20 min, and 30 min in MW and at 500 degrees C for 1 min in MW. After thermal treatment, the photoluminescent properties of powders at room temperature were analyzed. (c) 2007 Published by Elsevier B.V.

Piezoresponse behavior of niobium doped bismuth ferrite thin films grown by chemical method

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Effect of niobium dopant on fatigue characteristics of BiFeO3 thin films grown on Pt electrodes

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Visible and near-infrared luminescent Eu3+ or Er3+ doped laponite-derived xerogels and thick films: Structural and spectroscopic properties

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Oxygen mobility and structural phase transformation in Bi2Sr2CaCu2O8+delta measured by anelastic spectroscopy

One of the most studied ceramic superconductors for application has been, undoubtedly, Bi2Sr2CaCu2O8+delta. Although being a multiphasic material, it has proved to have great advantages compared to other ceramic systems. Measurements of the elastic energy loss and modulus (anelastic spectroscopy) as a function of temperature call distinguish among different atomic jumps that occur inside the various phases or at different local ordering. In this paper, mechanical loss spectra of Bi2Sr2CaCu2O8+delta bar shaped samples, made by a conventional method, have been measured between 80 and 600 K, using a torsion pendulum operating in frequencies below 50 Hz, for samples annealed in vacuum up to 600 K. Possible relaxation mechanisms are proposed to explain the origin of the mechanical-loss peaks observed 300 and 500 K. (C) 2004 Elsevier B.V. All rights reserved.

Nanocrystalline anatase thin films prepared from redispersible sol-gel powders

Transparent thin films of nanocrystalline anatase were obtained by dip-coating process using an ethanolic suspension of redispersed nanoparticles. This suspension was prepared by sol-gel route and their redispersability achieved by surface grafting of para-toluene-sulfonic acid and acetylacetone. The effects of the acetylacetone content on the powder redispersibility and on the structural evolution of films were determined by small angle X-ray scattering, X-ray reflectometry and X-ray diffraction for different firing temperatures. The results demonstrated that the porous structure of the studied films consist of agglomerates of primary particles with two levels of porosity. The control of the amount of capping ligand allows for a fine-tuning of the average pore size of the dried films. Upon increasing the firing temperature up to 500 degrees C, progressive increase in apparent density, average pore size of films and average crystallite size of powders were observed. (c) 2005 Elsevier Ltd. All rights reserved.

Study on the orientation degree of Pb1-xLaxTiO3 thin films by the rocking curve technique and its morphological aspects

Thin films of perovskite-type materials such as PbTiO3, BaTiO3, (Pb,La)TiO3, (Pb, La)(ZrTi)O-3, KNbO3, and Pb(Mg,Nb)03 have been attracting great interest for applications like non-volatile memories, ultrasonic sensors and optical devices. Thin film should be epitaxially grown or at least highly textured since the properties of this anisotropic material depend on the crystallographic orientation. For optical devices, in particular, an epitaxial thin film without defects are essential to reduce optical propagation losses. Pb1-xLaxTiO3 (PLT) where x=0, 13 and 27% thin films were prepared by a chemical method (polymeric precursors method), and deposited by the spin coating technique onto substrates of SrTiO3 (STO) and LaAlO3 (LAO). The films were then beat treated at 500 degrees C in a controlled atmosphere of 0,. The orientation degree of the thin films was obtained from rocking curve technique, by means of X-ray difftaction analysis. A microstructural study revealed that the films were crack-free, homogeneous and have low roughness. (c) 2006 Elsevier B.V. All rights reserved.

Densification and coarsening of SnO2-based materials containing manganese oxide

The present work presents results on natural sintering of tin dioxide ceramics, prepared by a chemical route or by conventional mixing and containing manganese (X-Mn = Mn/(Mn + Sn)(atomic) with 0 less than or equal to X(Mn)less than or equal to 0.15). This cation, which is practically insoluble in SnO2 network, stays at the grain surface. During thermal treatment (500 degrees C less than or equal to T-s less than or equal to 1400 degrees C), as long as the manganese surface concentration is lower than a critical value, equal to 5.10(-6) mol m(-2), no densification takes place. As soon as this value is reached, densification and grain growth occur simultaneously. The shrinkage kinetics is fast and high rho/rho(t) values can be obtained (for example. rho/rho(t)=0.95 for T-s=1300 degrees C and X-Mn=0.004). The dependence between manganese content, manganese distribution, grain size and sintering behaviour is also discussed. (C) 1998 Published by Elsevier B.V. Limited.

Indium tin oxide films prepared via wet chemical route

In this work, indium tin oxide (ITO) films were prepared using a wet chemical route, the Pechini method. This consists of a polyesterification reaction between an alpha-hydroxicarboxylate complex (indium citrate and tin citrate) with a polyalcohol (ethylene glycol) followed by a post annealing at 500 degrees C. A 10 at.% of doping of Sn4+ ions into an In2O3 matrix was successfully achieved through this method. In order to characterize the structure, the morphology as well as the optical and electrical properties of the produced ITO films, they were analyzed using different experimental techniques. The obtained films are highly transparent, exhibiting transmittance of about 85% at 550 nm. They are crystalline with a preferred orientation of [222]. Microscopy discloses that the films are composed of grains of 30 nm average size and 0.63 nm RMS roughness. The films' measured resistivity, mobility and charge carrier concentration were 5.8 x 10(-3) Omega cm, 2.9 cm(2)/V s and -3.5 x 10(20)/cm(3), respectively. While the low mobility value can be related to the small grain size, the charge carrier concentration value can be explained in terms of the high oxygen concentration level resulting from the thermal treatment process performed in air. The experimental conditions are being refined to improve the electrical characteristics of the films while good optical, chemical, structural and morphological qualities already achieved are maintained. (C) 2007 Elsevier B.V. All rights reserved.

Sintering of ZnO doped SnO2

Dense SnO2 ceramics were obtained by doping with ZnO concentrations varies from 0.5 to 5.0 mel. The obtained powder was isostaticaly pressed to 210MPa in cylindrical shape and sintered from ambient to 1.500 degrees C using constant heating rate of 10 degrees C/min. Densities above 97% were obtained depending on the ZnO doping concentration. A maximum density was reached with the addition of 2 mol%. It can be concluded from shrinkage data and the observed microstructure obtained by SEM that the solid solution limit for ZnO in SnO2 is about 1.0 mol%. Above this concentration the formation of a second ceramic phase is observed.

Synthesis by the polymeric precursor method and characterization of undoped and Sn, Cr and V-doped ZrTiO4

In this work, zirconium titanate doped with 0. 1, 0.2, and 0.4 mole% of tin, chromium and vanadium was synthesized by the polymeric precursors method and characterized by thermal analysis (TG/DTA), X-ray diffraction (XRD), nitrogen adsorption and scanning electronic microscopy (SEM). The powder presented two mass losses attributed to the exit of water and to the pyrolysis of the organic material. The surface area reduction observed from 500 degrees C indicates the beginning of the sintering process. All the dopants led to changes in the lattice parameters and to the decrease of both crystallite size and particle size. (c) 2005 Elsevier B.V. All rights reserved.

Low-temperature, self-nucleated growth of indium-tin oxide nanostructures by pulsed laser deposition on amorphous substrates

Indium-tin oxide nanostructures were deposited by excimer laser ablation in a nitrogen atmosphere using catalyst-free oxidized silicon substrates at 500 degrees C. Up to 1 mbar, nanowires grew by the vapor-liquid-solid (VLS) mechanism, with the amount of liquid material decreasing as the deposition pressure increased. The nanowires present the single-crystalline cubic bixbyite structure, oriented < 100 >. For the highest pressure used, pyramids were formed and no sign of liquid material could be observed, indicating that these structures grew by a vapor-solid mechanism. (c) 2006 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Microstructure and electrical properties of perovskite (Pb, La)TiO3 thin film deposited at low temperature by the polymeric precursor method

High-quality (Pb, La)TiO3 ferroelectric thin films were successfully prepared on a Pt(111)/Ti/SiO2/Si(100) substrate for the first time by spin coating, using the polymeric precursor method. The X-ray diffraction patterns show that the films are polycrystalline in nature. This method allows for low temperature (500 degrees C) synthesis, a high quality microstructure and superior dielectric properties. The effects on the microstructure and electrical properties were studied by changing the La content. The films annealed at 500 degreesC have a single perovskite phase with only a tetragonal or pseudocubic structure. As the La content is increased, the dielectric constant of PLT thin films increases from 570 up to 1138 at room temperature. The C-V and P-E characteristics of perovskite thin films prepared at a low temperature show normal ferroelectric behavior, representing the ferroelectric switching property. The remanent polarization and coercive field of the films deposited decreased due to the transformation from the ferroelectric to the paraelectric phase with an increased La content. (C) 2001 Kluwer Academic Publishers.

Density improvement of the sol-gel dip-coated SnO2 films by chemical surface modification

We compare the effect of organic (Tiron (R)) and inorganic (Mn(11)) additives on the low temperature (< 600 degrees C) densification of the sol-gel dip-coated SnO2 films. The structural and compositional properties of the samples were investigated by X-ray reflectometry (XRR), X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS). The results suggest that the replacement of hydroxyl groups at the particle surface by Tiron (R) reduces the level of agglomeration of the sol, increasing the particles packing and the apparent density of the coatings. Undoped and Mn-doped films drawn from a Tiron (R) containing suspension show after firing at 500 degrees C a porosity reduction of 12 and 8.6%, respectively. The porosity decrease is less pronounced (4.3%) for the film without additives. Both XAS and XPS data show the presence of trivalent manganese. The formation of a non-homogeneous solid solution characterised by the presence of Mn(111) replacing tin atom near to the crystallite surface was evidenced by XAS. Additionally, XPS results reveal the presence of metallic Sn at the surface of films containing Tirono. (c) 2005 Elsevier Ltd. All rights reserved.

Disorder-dependent photoluminescence in Ba0.8Ca0.2TiO3 at room temperature

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)