Au nanorods-semiconductor nanowire hybrid nanostructures : nanofabrication techniques and optoelectronic properties

The objective of this thesis is the exploration and characterization of novel Au nanorod-semiconductor nanowire hybrid nanostructures. I provide a comprehensive bottom-up approach in which, starting from the synthesis and theoretical investigation of the optical properties of Au nanorods, I design, nanofabricate and characterize Au nanorods-semiconductor nanowire hybrid nanodevices with novel optoelectronic capabilities compared to the non-hybrid counterpart. In this regards, I first discuss the seed-mediated protocols to synthesize Au nanorods with different sizes and the influence of nanorod geometries and non-homogeneous surrounding medium on the optical properties investigated by theoretical simulation. Novel methodologies for assembling Au nanorods on (i) a Si/SiO2 substrate with highly-ordered architecture and (ii) on semiconductor nanowires with spatial precision are developed and optimized. By exploiting these approaches, I demonstrate that Raman active modes of an individual ZnO nanowire can be detected in non-resonant conditions by exploring the longitudinal plasmonic resonance mediation of chemical-synthesized Au nanorods deposited on the nanowire surface otherwise not observable on bare ZnO nanowire. Finally, nanofabrication and detailed electrical characterization of ZnO nanowire field-effect transistor (FET) and optoelectronic properties of Au nanorods - ZnO nanowire FET tunable near-infrared photodetector are investigated. In particular we demonstrated orders of magnitude enhancement in the photocurrent intensity in the explored range of wavelengths and 40 times faster time response compared to the bare ZnO FET detector. The improved performance, attributed to the plasmonicmediated hot-electron generation and injection mechanism underlying the photoresponse is investigated both experimentally and theoretically. The miniaturized, tunable and integrated capabilities offered by metal nanorodssemicondictor nanowire device architectures presented in this thesis work could have an important impact in many application fields such as opto-electronic sensors, photodetectors and photovoltaic devices and open new avenues for designing of novel nanoscale optoelectronic devices.

Theory of the electronic and optical properties of dilute bismide alloys

Dilute bismide alloys, containing small fractions of bismuth (Bi), have recently attracted interest due to their potential for applications in a range of semiconductor devices. Experiments have revealed that dilute bismide alloys such as GaBixAs1−x, in which a small fraction x of the atoms in the III-V semiconductor GaAs are replaced by Bi, exhibit a number of unusual and unique properties. For example, the band gap energy (E g) decreases rapidly with increasing Bi composition x, by up to 90 meV per % Bi replacing As in the alloy. This band gap reduction is accompanied by a strong increase in the spin-orbit-splitting energy (ΔSO) with increasing x, and both E g and ΔSO are characterised by strong, composition-dependent bowing. The existence of a ΔSO > E g regime in the GaBixAs1−x alloy has been demonstrated for x ≳10%, a band structure condition which is promising for the development of highly efficient, temperature stable semiconductor lasers that could lead to large energy savings in future optical communication networks. In addition to their potential for specific applications, dilute bismide alloys have also attracted interest from a fundamental perspective due to their unique properties. In this thesis we develop the theory of the electronic and optical properties of dilute bismide alloys. By adopting a multi-scale approach encompassing atomistic calculations of the electronic structure using the semi-empirical tight-binding method, as well as continuum calculations based on the k•p method, we develop a fundamental understanding of this unusual class of semiconductor alloys and identify general material properties which are promising for applications in semiconductor optoelectronic and photovoltaic devices. By performing detailed supercell calculations on both ordered and disordered alloys we explicitly demonstrate that Bi atoms act as isovalent impurities when incorporated in dilute quantities in III-V (In)GaAs(P) materials, strongly perturbing the electronic structure of the valence band. We identify and quantify the causes and consequences of the unusual electronic properties of GaBixAs1−x and related alloys, and our analysis is reinforced throughout by a series of detailed comparisons to the results of experimental measurements. Our k•p models of the band structure of GaBixAs1−x and related alloys, which we derive directly from detailed atomistic calculations, are ideally suited to the study of dilute bismide-based devices. We focus in the latter part of the thesis on calculations of the electronic and optical properties of dilute bismide quantum well lasers. In addition to developing an understanding of the effects of Bi incorporation on the operational characteristics of semiconductor lasers, we also present calculations which have been used explicitly in designing and optimising the first generation of GaBixAs1−x-based devices.

Optical Characterization of Indium Gallium Nitride for Application in High-Efficiency Solar Photovoltaic Cells

The semiconductor alloy indium gallium nitride (InxGa1-xN) offers substantial potential in the development of high-efficiency multi-junction photovoltaic devices due to its wide range of direct band gaps, strong absorption and other optoelectronic properties. This work uses a variety of characterization techniques to examine the properties of InxGa1-xN thin films deposited in a range of compositions by a novel plasma-enhanced evaporation deposition system. Due to the high vapour pressure and low dissociation temperature of indium, the indium incorporation and, ultimately, control of the InxGa1-xN composition was found to be influenced to a greater degree by deposition temperature than variations in the In:Ga source rates in the investigated region of deposition condition space. Under specific deposition conditions, crystalline films were grown in an advantageous nano-columnar microstructure with deposition temperature influencing column size and density. The InxGa1-xN films were determined to have very strong absorption coefficients with band gaps indirectly related to indium content. However, the films also suffer from compositional inhomogeneity and In-related defect complexes with strong phonon coupling that dominates the emission mechanism. This, in addition to the presence of metal impurities, harms the alloy’s electronic properties as no significant photoresponse was observed. This research has demonstrated the material properties that make the InxGa1-xN alloy attractive for multi-junction solar cells and the benefits/drawbacks of the plasma-enhanced evaporation deposition system. Future work is needed to overcome significant challenges relating to crystalline quality, compositional homogeneity and the optoelectronic properties of In-rich InxGa1-xN films in order to develop high-performance photovoltaic devices.

Chalcogenide thin films for solar cells: growth and properties

Thin film solar cells have in recent years gained market quota against traditional silicon photovoltaic panels. These developments were in a large part due to CdTe solar panels on whose development started earlier than their competitors. Panels based on Cu(In,Ga)Se2 (CIGS), despite being more efficient in a laboratory and industrial scale than the CdTe ones, still need a growth technology cheaper and easier to apply in industry. Although usually presented as a good candidate to make cheap panels, CIGS uses rare and expensive materials as In and Ga. The price evolution of these materials might jeopardize CIGS future. This thesis presents three different studies. The first is the study of different processes for the incorporation of Ga in a hybrid CIGS growth system. This system is based on sputtering and thermal evaporation. This technology is, in principle, easier to be applied in the industry and solar cells with efficiencies around to 7% were fully made in Aveiro. In the second part of this thesis, a new material to replace CIGS in thin film solar cells is studied. The growth conditions and fundamental properties of Cu2ZnSnSe4 (CZTSe) were studied in depth. Suitable conditions of temperature and pressure for the growth of this material are reported. Its band gap energy was estimated at 1.05 eV and the Raman scattering peaks were identified. Solar cells made with this material showed efficiencies lower than 0.1%. Finally, preliminary work regarding the incorporation of selenium in Cu2ZnSnS4 (CZTS) thin films was carried out. The structural and morphological properties of thin films of Cu2ZnSn(S,Se)4 have been studied and the results show that the incorporation of selenium is higher in films with precursors rather with already formed Cu2SnS3 or Cu2ZnSnS4 thin films. A solar cell with 0.9 % of efficiency was prepared.

Development of Photorefractive Polymers: Evaluation of Photoconducting and Electro-optic Properties

This Thesis discussed molecules suitable for photorefractive effect. Out of the molecules studied, only one system was used to make photorefractive polymers system. Other molecules, especially, the electro-optic polymer, Poly(3-methacrloyl-1-(4'-nitro-4-azo-1'-phenyl)phenylalanine-co- methyl methacrylate) can be subjected to more detailed studies to explore the possibilities of using them for electro-optic applications. Though not included in the thesis, the efficient photoconductor, Poly(6-tert-butyl-3- phenyl-3,4-dihydro-2H-1,3-benzoxazine) sensitized with C60, which was described in Chapter 3 showed a low magnitude photovoltaic effect. This hints at the possibility of using this system for organic solar cells also. The thesis presented the initial observation of photorefractive effect in a polybenzoxazine based polymer system. A detailed analysis of the effect of C60, ECZ and DR1 can be carried out to check for the possibility of a high efficiency photorefractive system.

Photoconductivity studies on some semiconducting thin films for photovoltaic applications

Photoconductivity (PC) processes may be the most suitable technique for obtaining information about the states in the gap. It finds applications in photovoItaics, photo detection and radiation measurements. The main task in the area of photovoltaics, is to increase the efficiency of the device and also to develop new materials with good optoelectronic properties useful for energy conversion, keeping the idea of cost effectiveness. Photoconduction includes generation and recombination of carriers and their transport to the electrodes. So thermal relaxation process, charge carrier statistics, effects of electrodes and several mechanisms of recombination are involved in photoconductivity.A major effect of trapping is to make the experimentally observed decay time of photocurrent, longer than carrier lifetime. If no trapping centers are present, then observed photocurrent will decay in the same way as the density of free carriers and the observed decay time will be equal to carrier lifetime. If the density of free carriers is much less than density of trapped carriers, the entire decay of photocurrent is effectively dominated by the rate of trap emptying rather than by the rate of recombination.In the present study, the decay time of carriers was measured using photoconductive decay (PCD) technique. For the measurements, the film was loaded in a liquid Helium cryostat and the temperature was controlled using Lakshore Auto tuning temperature controller (Model 321). White light was used to illuminate the required area of the sample. Heat radiation from the light source was avoided by passing the light beam through a water filter. The decay current. after switching off the illumination. was measured using a Kiethely 2000 multi meter. Sets of PCD measurements were taken varying sample temperature, sample preparation temperature, thickness of the film, partial pressure of Oxygen and concentration of a particular element in a compound. Decay times were calculated using the rate window technique, which is a decay sampling technique particularly suited to computerized analysis. For PCD curves with two well-defined regions, two windows were chosen, one at the fast decay region and the other at the slow decay region. The curves in a particular window were exponentially fitted using Microsoft Excel 2000 programme. These decay times were plotted against sample temperature and sample preparation temperature to study the effect of various defects in the film. These studies were done in order to optimize conditions of preparation technique so as to get good photosensitive samples. useful for photovoltaic applications.Materials selected for the study were CdS, In2Se3, CuIn2Se3 and CuInS2• Photoconductivity studies done on these samples are organised in six chapters including introduction and conclusion.

Investigation of structural, optical and electrical properties and valence band splitting in cu-ln-se compounds

Investigations on thin films that started decades back due to scientific curiosity in the properties of a two-dimensional solid, has developed into a leading research field in recent years due to the ever expanding applications of the thin films in the fann of a variety of active and passive microminiaturized components and devices, solar cells, radiation sowces and detectors, magnetic memory devices, interference filters, refection and antireflection coatings etc. [1]. The recent environment and energy resource concerns have aroused an enonnous interest in the study of materials in thin film form suitable for renewable energy sources such as photovoltaic devices. Recognition of the immense potential applications of the chalcopyrites that can fonn homojunctions or heterojunctions for solar cell fabrication has attracted many researchers to extensive and intense research on them. In this thesis, we have started with studies performed on CuInSe, thin films, a technologically well recognized compound belonging to the l•ill-VI family of semiconductors and have riveted on investigations on the preparation and characterization of compoWlds Culn3Se5. Culn5Seg and CuIn7Se12, an interesting group of compounds related to CuInSe2 called Ordered Vacancy Compounds, having promising applications in photovoltaic devices. A pioneering work attempted on preparing and characterizing the compound Culn7Sel2 is detailed in the chapters on OVC's. Investigation on valence band splitting in avc's have also been attempted for the first time and included as the last chapter in the thesis. Some of the salient features of the chalcopyrite c.ompounds are given in the next section .of this introductory chapter.

Non-destructive evaluation of photovoltaic materials and solar cells using Photoluminescence

Photoluminescence (PL) spectroscopy is an optical technique that has emerged successful in the field of semiconductor material and device characterization. This technique is quite a powerful one which gives idea about the defect levels in a material, the band gap of the material, composition as well as material quality. Over the recent years it has received an elevation as a mainstream characterization technique. This thesis is an attempt to characterize each individual layer used in a thin film solar cell with special focus on the electrical properties. This will be highly beneficial from the lab as well as industrial point of view because electrical measurements generally are contact mode measurements which tend to damage the surface. As far as a thin film solar cell is concerned, the constituent layers are the transparent conducting oxide (TCO), absorber layer, buffer layer and top electrode contact. Each layer has a specific role to play and the performance of a solar cell is decided and limited by the quality of each individual layer. Various aspects of PL spectroscopy have been employed for studying compound semiconductor thin films [deposited using chemical spray pyrolysis (CSP)] proposed for solar cell application. This thesis has been structured in to seven chapters

Reliable and Damage-Free Estimation of Resistivity of ZnO Thin Films for Photovoltaic Applications Using Photoluminescence Technique

This work projects photoluminescence (PL) as an alternative technique to estimate the order of resistivity of zinc oxide (ZnO) thin films. ZnO thin films, deposited using chemical spray pyrolysis (CSP) by varying the deposition parameters like solvent, spray rate, pH of precursor, and so forth, have been used for this study. Variation in the deposition conditions has tremendous impact on the luminescence properties as well as resistivity. Two emissions could be recorded for all samples—the near band edge emission (NBE) at 380 nm and the deep level emission (DLE) at ∼500 nm which are competing in nature. It is observed that the ratio of intensities of DLE to NBE ( DLE/ NBE) can be reduced by controlling oxygen incorporation in the sample. - measurements indicate that restricting oxygen incorporation reduces resistivity considerably. Variation of DLE/ NBE and resistivity for samples prepared under different deposition conditions is similar in nature. DLE/ NBE was always less than resistivity by an order for all samples.Thus from PL measurements alone, the order of resistivity of the samples can be estimated.

Theoretical Design and Synthesis of Donor-Acceptor Conjugated Polymers for Photovoltaic and NLO Applications

Polymers with conjugated π-electron backbone display unusual electronic properties such as low energy optical transition, low ionization potentials, and high electron affinities. The properties that make these materials attractive include a wide range of electrical conductivity, mechanical flexibility and thermal stability. Some of the potential applications of these conjugated polymers are in sensors, solar cells, field effect transistors, field emission and electrochromic displays, supercapacitors and energy storage. With recent advances in the stability of conjugated polymer materials, and improved control of properties, a growing number of applications are currently being explored. Some of the important applications of conducting polymers include: they are used in electrostatic materials, conducting adhesives, shielding against electromagnetic interference (EMI), artificial nerves, aircraft structures, diodes, and transistors.

Substitutional Impurities in PPV Crystals: An Intrinsic Donor-Acceptor System for High V(oc) Photovoltaic Devices

Defects are usually present in organic polymer films and are commonly invoked to explain the low efficiency obtained in organic-based optoelectronic devices. We propose that controlled insertion of substitutional impurities may, on the contrary, tune the optoelectronic properties of the underivatized organic material and, in the case studied here, maximize the efficiency of a solar cell. We investigate a specific oxygen-impurity substitution, the keto-defect -(CH(2)-C=O)- in underivatized crystalline poly(p-phenylenevinylene) (PPV), and its impact on the electronic structure of the bulk film, through a combined classical (force-field) and quantum mechanical (DFT) approach. We find defect states which suggest a spontaneous electron hole separation typical of a donor acceptor interface, optimal for photovoltaic devices. Furthermore, the inclusion of oxygen impurities does not introduce defect states in the gap and thus, contrary to standard donor-acceptor systems, should preserve the intrinsic high open circuit voltage (V(oc)) that may be extracted from PPV-based devices.

Photovoltaic Process Development and innovative Techniques

Photovoltaic processing is one of the processes that have significance in semiconductor process line. It is complicated due to the no. of elements involved that directly or indirectly affect the processing and final yield. So mathematically or empirically we can’t say assertively about the results specially related with diffusion, antireflective coating and impurity poisoning. Here I have experimented and collected data on the mono-crystal silicon wafers with varying properties and outputs. Then by using neural network with available experimental data output required can be estimated which is further tested by the test data for authenticity. One can say that it’s a kind of process simulation with varying input of raw wafers to get desired yield of photovoltaic mono-crystal cells.

Cu nanoparticles enable plasmonic-improved silicon photovoltaic devices

This work examines the effect of copper nanoparticles (Cu NPs) on the photocurrent efficiency of silicon photovoltaic (Si PV) devices. An optimized synthesis of stable Cu NPs is reported together with a procedure for their immobilization on the Si PV surface. A comprehensive analysis of the photocurrent and power dependence of the Cu NPs surface coverage and size is presented. A decrease in photoconversion was observed for wavelengths shorter than similar to 500 nm, due to the Cu interband absorption. In the low surface coverage limit, where the level of aggregation was found to be low, the surface plasmon resonance absorption dominates leading to a modest effect on the photocurrent response. As the number of aggregates increased with the surface coverage, the photocurrent efficiency also increased, and a maximum enhancement power conversion of 16% was found for a 54 +/- 6 NPs per mu m(2) PV cell. This enhancement was attributed to SPR light scattering and trapping into the Si PV device. Higher surface coverage yielded numerous aggregates which acted as a bulk coating and caused a decrease in both photocurrent and power measurements.

Synthetical engineering of supramolecular properties of large polycyclic aromatic hydrocarbons

An important property for devices is the charge-carrier mobility values for discotic organic materials like hexa-peri-hexabenzocoronenes. A close relation exists between the degree of their columnar self-arrangement of the molecules and their mobilities. Within this first step an induction of a higher order via hydrogen-bonding was considered, which mainly pointed towards the improvement of the intracolumnar stacking of the materials. For the analytics a broad range of methods was used including differential scanning calorimetry (DSC), wide-angle X-ray diffractometry (WAXS), solid-state NMR spectroscopy and scanning tunneling microscopy (STM). Indeed, a specific influence of the hydrogen-bonds could be identified, although in several cases by the cost of a severe reduction of solubility and processability. This effect was dampened by the addition of a long alkyl chain next to the hydrogen-bond exerting functional group, which resulted in an improved columnar arrangement by retention of processability. In contrast to the before mentioned example of inducing a higher intracolumnar order by hydrogen-bonding, the focus was also be set upon larger aromatic systems. The charge-carrier mobility is also in close relation to the size of the aromatic core and larger π-areas are expected to lead to improved mobilities. For photovoltaic applications a high extinction coefficient over a broad range of the spectrum is favorable, which can also be achieved by enlarging the aromatic core component. In addition the stronger π-interactions between the aromatic core components should yield an improved columnar stability and order. However the strengthening of the π-interactions between the aromatic core components led to a reduction of the solubility and the processability due to the stronger aggregation of the molecules. This required the introduction of efficiently solubilizing features in terms of long alkyl chains in the corona of the aromatic entity, in combination of a distortion of the aromatic core moiety by bulky tert-butyl groups. By this approach not only the processing and cleaning of the materials with standard laboratory techniques became possible, but moreover the first structure-rich UV/vis and a resolved 1H-NMR spectra for an aromatic system two times larger than hexa-peri-hexabenzocoronene were recorded. The bulk properties in an extruded fiber as well as on the surface showed a columnar self-assembly including a phase in which a homeotropic alignment on a substrate was observed, which turns the material into an interesting candidate for future applications in electronic devices.

Light harvesting and orbital tuning : perylene monoimides and diimides for photovoltaic purposes

Die vorliegende Dissertation beschaftigt sich mit der Steuerung der Absorption und Orbitalenergien von Perylenmonoimiden und Perylendiimiden fur die Anwendung in organischer Photovoltaik (OPV). Eine breite Absorption spielt hier eine wichtige Rolle, um moglichst viel Licht zu ernten, das dann in elektrische Energie umgewandelt wird. Um sicher zu stellen, dass die Zelle ezient arbeiten kann, ist die Abstimmung von Orbitalenergien eine zweite wichtige Voraussetzung. Es werden drei neue Design-Konzepte fur Perylenmonoimid-Sensibilatoren fur Festk orper-Farbstosolarzellen (solid-state dye-sensitised solar cells - sDSSCs) untersucht. Die Synthese, die optischen und elektronischen Eigenschaften der neuen Sensibilisator- Verbindungen sowie ihre Leistungsdaten in sDSSCs werden beschrieben und diskutiert. Die in dieser Arbeit vorgestellten Konzepte reichen von der Einfuhrung von - Abstandhaltern uber neue Funktionalisierungen bis hin zur Erweiterung der Perylenmonimid Grundkorper. Der Push-Pull-Charakter der Systeme variiert von starker Kopplung bis zu kompletter Entkopplung des Donors vom Akzeptor. Dies hat einen starken Ein uss sowohl auf die Absorptionseigenschaften, als auch auf die HOMO/LUMO Energie-Niveaus der Verbindungen. Einige der Konzepte konnen auf Perylendiimide ubertragen werden. Ein Beispiel von Perylendiimid (PDI)-Farbsteuerung wird an einer Reihe von drei Terthiophen-PDIs gezeigt