Subthalamic (STN) Deep Brain Stimulation (DBS) in Parkinson's Disease (PD): Correlation Between the Location of the Stimulated Contacts and the Clinical Effects in 14 Patients

Objectives: To correlate the chronic stimulated electrode position on postoperative MRI with the clinical response obtained in PD patients. Material and Method: We retrospectively reviewed 14 consecutive parkinsonian patients who were selected for STN-DBS surgery. Coordinates were determined on an IR T2 MRI coronal section per pendicular to AC-PC plane 3 mm posterior to midcommissural point (MCP) and 12 mm lateral to the midline the inferior aspect of subthalamic region. A CRW stereotactic frame was used for the surgical procedure. A 3D IR T2 MRI was performed postoperatively to determine the location of the stimulated contact in each patient. The clinical results were assessed independently by the neurological team. Results: All but 2 patients had monopolar stimulation. The mean coordinates of the stimulated contacts were: AP ^ ÿ4:23G1:4, Lat ^ 1:12G0:15, Vert ^ ÿ4:1 G2:7 to the MCP. With a mean follow-up of 8 months, all stimulated patients had a significant clinical improvement (preop/postop «ON» UPDRS: 25:8G7:0= 23:3 G8:6; preop/postop «OFF» UPDRS: 50:2G11:4=26:0 G7:8), 60% of them without any antiparkinsonian drug. Conclusion: According to the stereotactic atlas of Schaltenbrand and Warren and the 3D shape of the STN, our results show that our targetting is accurate and almost all the stimulated contacts are comprised in the STN volume. This indicates that MRI is a safe, precise and reproducible procedure for targetting the STN. The location of the stimulated contact within the STN volume is a good predictor of the clinical results.

Utilisation of customer contacts: customer observation

Importance of customer as a source of knowledge and finding out the customer needs have both been emphasised both in business literature and in the interviews made for this study. Especially the latent customer needs are seen important for future competitiveness. However, the methods for finding out the customer needs concentrate on the present, clearly phrased needs. There is a need for rich customer based knowledge. Customer contacts are underutilised as a source of knowledge. The objective of this study is to find a method to utilise the customer contacts as a source of knowledge more efficiently. To reach this objective, the customer observation is presented. A concrete goal is the development of a general method of customer observation and its application to the needs of the case company Fastems. Fastems hopes that the method raises the amount of ideas that come to the product and service development processes and increases their customer orientation. The method is tested in practise in the piloting stage. The testing is done in service organisations of Fastems in several countries. The observations received during the piloting phase are analysed and feedback is given to the observers. An important part of the study is to find appropriate methods for motivating the observers. The successful implementation and sustenance of the method are seen as goals of high importance. Later on, the customer observation method is implemented throughout the company. The results of the piloting are promising and the described method has roused interest among other companies as well.

Spin Polarization and Normal Reflection at Nanoscale Point Contacts

This thesis presents point-contact measurements between superconductors (Nb, Ta, Sn,Al, Zn) and ferromagnets (Co, Fe, Ni) as well as non-magnetic metals (Ag, Au, Cu, Pt).The point contacts were fabricated using the shear method. The differential resistanceof the contacts was measured either in liquid He at 4.2 K or in vacuum in a dilutionrefrigerator at varying temperature down to 0.1 K. The contact properties were investigatedas function of size and temperature. The measured Andreev-reflection spectrawere analysed in the framework of the BTK model – a three parameter model that describescurrent transport across a superconductor - normal conductor interface. Theoriginal BTK model was modified to include the effects of spin polarization or finitelifetime of the Cooper pairs. Our polarization values for the ferromagnets at 4.2 K agree with the literature data, but the analysis was ambiguous because the experimental spectra both with ferromagnets and non-magnets could be described equally well either with spin polarization or finite lifetime effects in the BTK model. With the polarization model the Z parametervaries from almost 0 to 0.8 while the lifetime model produces Z values close to 0.5. Measurements at lower temperatures partly lift this ambiguity because the magnitude of thermal broadening is small enough to separate lifetime broadening from the polarization. The reduced magnitude of the superconducting anomalies for Zn-Fe contacts required an additional modification of the BTK model which was implemented as a scaling factor. Adding this parameter led to reduced polarization values. However, reliable data is difficult to obtain because different parameter sets produce almost identical spectra.

Humoral response to low molecular weight antigens of Mycobacterium tuberculosis by tuberculosis patients and contacts

Much effort has been devoted to the identification of immunologically important antigens of Mycobacterium tuberculosis and to the combination of target antigens to which antibodies from serum of tuberculous patients could react specifically. We searched for IgG antibodies specific for antigens of 45 to 6 kDa obtained after sonication of the well-characterized wild M. tuberculosis strain in order to detect differences in the antibody response to low molecular weight antigens from M. tuberculosis between patients with pulmonary tuberculosis and contacts. Specific IgG antibodies for these antigens were detected by Western blot analysis of 153 serum samples collected from 51 patients with confirmed pulmonary tuberculosis. Three samples were collected from each patient: before therapy, and after 2 and 6 months of treatment. We also analyzed 25 samples obtained from contacts, as well as 30 samples from healthy individuals with known tuberculin status, 50 samples from patients with other lung diseases and 200 samples from healthy blood donors. The positive predictive value for associated IgG reactivity against the 6-kDa and 16-kDa antigens, 6 and 38 kDa, and 16 and 38 kDa was 100% since simultaneous reactivity for these antigens was absent in healthy individuals and individuals with other lung diseases. This association was observed in 67% of the patients, but in only 8% of the contacts. The humoral response against antigens of 16 and 6 kDa seems to be important for the detection of latent tuberculosis since the associated reactivity to these antigens is mainly present in individuals with active disease.

Simulation de centres de contacts

Thèse numérisée par la Division de la gestion de documents et des archives de l'Université de Montréal

Réduction de la durée de vie des porteurs de charge dans le silicium noir par implantation ionique

Le but de ce projet est d’étudier l’effet des défauts cristallins sur les propriétés optoélectroniques de photodétecteurs fabriqué à partir de « silicium noir », c’est-à-dire du silicium dopé et microstructuré par impulsions laser femtoseconde, ce qui lui donne une apparence noire mate caractéristique. Des échantillons de silicium noir ont été recuits puis implantés avec des ions ayant une énergie de 300 keV (Si+), 1500 keV (Si+) ou 2000 keV (H+). Trois fluences pour chaque énergie d’implantation ont été utilisées (1E11, 1E12, ou 1E13 ions/cm2) ce qui modifie le matériau en ajoutant des défauts cristallins à des profondeurs et concentrations variées. Neuf photodétecteurs ont été réalisés à partir de ces échantillons implantés, en plus d’un détecteur-contrôle (non-implanté). La courbe de courant-tension, la sensibilité spectrale et la réponse en fréquence ont été mesurées pour chaque détecteur afin de les comparer. Les détecteurs ont une relation de courant-tension presque ohmique, mais ceux implantés à plus haute fluence montrent une meilleure rectification. Les implantations ont eu pour effet, en général, d’augmenter la sensibilité des détecteurs. Par exemple, l’efficacité quantique externe passe de (0,069±0,001) % à 900 nm pour le détecteur-contrôle à (26,0±0,5) % pour le détecteur ayant reçu une fluence de 1E12 cm-2 d’ions de silicium de 1500 keV. Avec une tension appliquée de -0,50 V, la sensibilité est améliorée et certains détecteurs montrent un facteur de gain de photocourant supérieur à l’unité, ce qui implique un mécanisme de multiplication (avalanche ou photoconductivité). De même, la fréquence de coupure a été augmentée par l’implantation. Une technique purement optique a été mise à l’essai pour mesurer sans contacts la durée de vie effective des porteurs, dans le but d’observer une réduction de la durée de vie causée par les défauts. Utilisant le principe de la réflexion photo-induite résolue en fréquence, le montage n’a pas réuni toutes les conditions expérimentales nécessaires à la détection du signal.

Impedance field and transition from thermal to shot noise in Cd1-xZnxTe semi-insulating Ohmic detectors

Within a drift-diffusion model we investigate the role of the self-consistent electric field in determining the impedance field of a macroscopic Ohmic (linear) resistor made by a compensated semi-insulating semiconductor at arbitrary values of the applied voltage. The presence of long-range Coulomb correlations is found to be responsible for a reshaping of the spatial profile of the impedance field. This reshaping gives a null contribution to the macroscopic impedance but modifies essentially the transition from thermal to shot noise of a macroscopic linear resistor. Theoretical calculations explain a set of noise experiments carried out in semi-insulating CdZnTe detectors.

An investigation on the electrical characteristics of antimony trisulphide films and certain metal semiconductor (Sb2S3) contacts

The Thesis consist of the study of the electrical properties of antimony trisulphide films and the electrical behaviour of different metal contacts to antimony trisulphide films. Since the thermal evapouration of the compound antimony trisulphide as such mayresult in nonstoichiometric compound films , sb2s3 films in the present work were mostly prepared by the three temperature method ,keeping the substrate at different temperature ranging from 3031 to 4231 and evapourating antimony and sulphur simultaneously from separate sources.

Effects of Platinum on NiPtSiGe/n-SiGe and NiPtSi/n-Si Schottky Contacts

Solid phase reaction of NiPt/Si and NiPt/SiGe is one of the key issues for silicide (germanosilicide) technology. Especially, the NiPtSiGe, in which four elements are involved, is a very complex system. As a result, a detailed study is necessary for the interfacial reaction between NiPt alloy film and SiGe substrate. Besides using traditional material characterization techniques, characterization of Schottky diode is a good measure to detect the interface imperfections or defects, which are not easy to be found on large area blanket samples. The I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%) germanosilicides/n-Si₀/₇Ge₀.₃ and silicides/n-Si contact annealed at 400 and 500°C were studied. For Schottky contact on n-Si, with the addition of Pt in the Ni(Pt) alloy, the Schottky barrier height (SBH) increases greatly. With the inclusion of a 10% Pt, SBH increases ~0.13 eV. However, for the Schottky contacts on SiGe, with the addition of 10% Pt, the increase of SBH is only ~0.04eV. This is explained by pinning of the Fermi level. The forward I-V characteristics of 10nm Ni(Pt=0, 5, 10 at.%)SiGe/SiGe contacts annealed at 400°C were investigated in the temperature range from 93 to 300K. At higher temperature (>253K) and larger bias at low temperature (<253K), the I-V curves can be well explained by a thermionic emission model. At lower temperature, excess currents at lower forward bias region occur, which can be explained by recombination/generation or patches due to inhomogenity of SBH with pinch-off model or a combination of the above mechanisms.