Demonstration of a compact InGaAsP active crosspoint switch operating at 1.5 μm using novel reflective y-coupler components

An extremely compact active optoelectronic crosspoint switch, having overall dimensions of 400 μm×200 μm, is reported. The device provides unity facet-to-facet gain for both bar and cross state operation for TE or TM input signals.

Long-wavelength monolithic mode-locked diode lasers

A detailed study of the design issues relevant to long-wavelength monolithic mode-locked lasers is presented. Following a detailed review of the field, we have devised a validated travelling wave model to explore the limits of mode-locking in monolithic laser diodes, not only in terms of pulse duration and repetition rate, but also in terms of stability. It is shown that fast absorber recovery is crucial for short pulse width, that the ratio of gain to absorption saturation is key in accessing ultrashort pulses and that low alpha factors give only modest benefit. Finally, optimized contact layouts are shown to greatly enhance pulse stability and the overall operational success. The design rules show high levels of consistency with published experimental data.

Monolithic electro-optically modulated VCSEL suitable for radio over fibre applications to 20 GHz

An integrated EOM VCSELs is shown to offer high linearity (92dB/Hz 2/3 at 6GHz) and by extrapolation ∼90dB/Hz2/3 up to 20GHz. Successful modulation with IEEE 802.11g signals is demonstrated at 6GHz with a 12dB dynamic range. © 2011 Optical Society of America.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

All-optical switching in a vertical coupler space switch employing photocarrier-induced nonlinearity

A novel compact integrated nonlinear optical switch is demonstrated. Using a high-power picosecond pulse of 5-ps pulsewidth and 250-MHz repetition rate, all-optical switching with a contrast ratio of 23 dB has been achieved using an in-fiber input power < 14 dBm (100 pJ/pulse). The switch speed depends on the carrier sweep-out time, which can be reduced to the 10 ps range by either applying a reverse bias or by introduction of carrier recombination centers in the active layer.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.

Mode division multiplexing over 2km of OM2 fibre using rotationally optimized mode excitation with fibre coupler demultiplexer

A Spatial Light Modulator and a non-specialized multimode coupler are used together to provide sufficient channel isolation and modal bandwidth for 2x12.5Gbps NRZ over 2km of standard graded-index multimode fibre without DSP. © 2012 IEEE.

Relating monolithic and granular leaching from contaminated soil treated with different cementitious binders.

This work employed a clayey, silty, sandy gravel contaminated with a mixture of metals (Cd, Cu, Pb, Ni and Zn) and diesel. The contaminated soil was treated with 5 and 10% dosages of different cementitious binders. The binders include Portland cement, cement-fly ash, cement-slag and lime-slag mixtures. Monolithic leaching from the treated soils was evaluated over a 64-day period alongside granular leachability of 49- and 84-day old samples. Surface wash-off was the predominant leaching mechanism for monolithic samples. In this condition, with data from different binders and curing ages combined, granular leachability as a function of monolithic leaching generally followed degrees 4 and 6 polynomial functions. The only exception was for Cu, which followed the multistage dose-response model. The relationship between both leaching tests varied with the type of metal, curing age/residence time of monolithic samples in the leachant, and binder formulation. The results provide useful design information on the relationship between leachability of metals from monolithic forms of S/S treated soils and the ultimate leachability in the eventual breakdown of the stabilized/solidified soil.