Anisotropic surface properties of micro/nanostructured a-C:H:F thin films with self-assembly applications

The singular properties of hydrogenated amorphous carbon (a-C:H) thin filmsdeposited by pulsed DC plasma enhanced chemical vapor deposition (PECVD), such as hardness and wear resistance, make it suitable as protective coating with low surface energy for self-assembly applications. In this paper, we designed fluorine-containing a-C:H (a-C:H:F) nanostructured surfaces and we characterized them for self-assembly applications. Sub-micron patterns were generated on silicon through laser lithography while contact angle measurements, nanotribometer, atomic force microscopy (AFM), and scanning electron microscopy (SEM) were used to characterize the surface. a-C:H:F properties on lithographied surfaces such as hydrophobicity and friction were improved with the proper relative quantity of CH4 and CHF3 during deposition, resulting in ultrahydrophobic samples and low friction coefficients. Furthermore, these properties were enhanced along the direction of the lithographypatterns (in-plane anisotropy). Finally, self-assembly properties were tested with silicananoparticles, which were successfully assembled in linear arrays following the generated patterns. Among the main applications, these surfaces could be suitable as particle filter selector and cell colony substrate.

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.

Extension of the impedance field method to the noise analysis of a semiconductor junction: Analytical approach

We present an analytical procedure to perform the local noise analysis of a semiconductor junction when both the drift and diffusive parts of the current are important. The method takes into account space-inhomogeneous and hot-carriers conditions in the framework of the drift-diffusion model, and it can be effectively applied to the local noise analysis of different devices: n+nn+ diodes, Schottky barrier diodes, field-effect transistors, etc., operating under strongly inhomogeneous distributions of the electric field and charge concentration

Local noise analysis of a Schottky contact: combined thermionic-emissiondiffusion theory

A theoretical model for the noise properties of Schottky barrier diodes in the framework of the thermionic-emission¿diffusion theory is presented. The theory incorporates both the noise inducedby the diffusion of carriers through the semiconductor and the noise induced by the thermionicemission of carriers across the metal¿semiconductor interface. Closed analytical formulas arederived for the junction resistance, series resistance, and contributions to the net noise localized indifferent space regions of the diode, all valid in the whole range of applied biases. An additionalcontribution to the voltage-noise spectral density is identified, whose origin may be traced back tothe cross correlation between the voltage-noise sources associated with the junction resistance andthose for the series resistance. It is argued that an inclusion of the cross-correlation term as a newelement in the existing equivalent circuit models of Schottky diodes could explain the discrepanciesbetween these models and experimental measurements or Monte Carlo simulations.

Impedance field and noise of submicrometer n+ nn+ diodes: analytical approach

A theoretical model for the noise properties of n+nn+ diodes in the drift-diffusion framework is presented. In contrast with previous approaches, our model incorporates both the drift and diffusive parts of the current under inhomogeneous and hot-carrier conditions. Closed analytical expressions describing the transport and noise characteristics of submicrometer n+nn+ diodes, in which the diode base (n part) and the contacts (n+ parts) are coupled in a self-consistent way, are obtained

Effects of the epitaxial layer thickness on the noise properties of Schottky barrier diodes

An analytical theory to describe the combined effects of the epitaxial layer thickness and the ohmic contact on the noise properties of Schottky barrier diodes is presented. The theory, which provides information on both the local and the global noise properties, takes into account the finite size of the epitaxial layer and the effects of the back ohmic contact, and applies to the whole range of applied bias. It is shown that by scaling down the epitaxial layer thickness, the current regime in which the noise temperature displays a shot-noise-like behavior increases at the cost of reducing the current range in which the thermal-noise-like behavior dominates. This improvement in noise temperature is limited by the effects of the ohmic contact, which appear for large currents. The theory is formulated on general trends, allowing its application to the noise analysis of other semiconductor devices operating under strongly inhomogeneous distributions of the electric field and charge concentrations.

Microcontroller-based interface circuit for inductive sensors

This work proposes a fully-digital interface circuit for the measurement of inductive sensors using a low-cost microcontroller (µC) and without any intermediate active circuit. Apart from the µC and the sensor, the circuit just requires an external resistor and a reference inductance so that two RL circuits with a high-pass filter (HPF) topology are formed. The µC appropriately excites such RL circuits in order to measure the discharging time of the voltage across each inductance (i.e. sensing and reference) and then it uses such discharging times to estimate the sensor inductance. Experimental tests using a commercial µC show a non-linearity error (NLE) lower than 0.5%FSS (Full-Scale Span) when measuring inductances from 1 mH to 10 mH, and from 10 mH to 100 mH.

Micro- and nanostructuring of poly(ethylene-2,6-naphthalate) surfaces, for biomedical applications, using polymer replication techniques

Here we investigate the formation of superficial micro- and nanostructures in poly(ethylene-2,6-naphthalate) (PEN), with a view to their use in biomedical device applications, and compare its performance with a polymer commonly used for the fabrication of these devices, poly(methyl methacrylate) (PMMA). The PEN is found to replicate both micro- and nanostructures in its surface, albeit requiring more forceful replication conditions than PMMA, producing a slight increase in surface hydrophilicity. This ability to form micro/nanostructures, allied to biocompatibility and good optical transparency, suggests that PEN could be a useful material for production of, or for incorporation into, transparent devices for biomedical applications. Such devices will be able to be autoclaved, due to the polymer's high temperature stability, and will be useful for applications where forceful experimental conditions are required, due to a superior chemical resistance over PMMA.

Sensortizació en aplicacions alimentàries

La societat actual es caracteritza pel seu ús intensiu i extensiu de les telecomunicacions, que ha esdevingut possible gràcies a la microelectrònica i altres tecnologies. Abans, la microelectrònica ja havia deixat la seva empremta en l’automatització i la computació, on la reducció de costos que hi aportava havia anat fent viables cada vegada més aplicacions. Aquest fet ha esdevingut particularment clar en l’automoció on fa relativament pocs anys els elements electrònics tenien un rol marginal i ara constitueixen una part important de tota mena de vehicles. Però mentre aquestes aplicacions afectaven principalment les màquines, les telecomunicacions involucren majoritàriament les persones i això ha implicat un esforç tecnològic addicional per aconseguir que els nous dispositius fossin assequibles per a molt usuaris.Aquest cicle “nova tecnologia que permet noves aplicacions que redueixen el cost de la tecnologia i això fa viables noves aplicacions”, no queda tancat dins cap àmbit d’aplicació sinó que té una dimensió totalment transversal. Els sensors, molts d’ells basats en tecnologies microelectròniques, són un paradigma del caràcter transversal de la tecnologia fins el punt que han esdevingut omnipresents, també en aplicacions alimentàries, tot i que encara hi hagi molts reptes per afrontar.En aquesta ponència s’exposaran en primer lloc els fonaments dels sensors i alguns dels avenços tecnològics que han marcat la seva evolució en els darrers anys. Després es revisaran algunes de les aplicacions actuals dels sensors en la indústria alimentària i els factors singulars que per una banda requereixen la incorporació de nous sensors i que per altra impedeixen que aquesta incorporació es pugui fer mitjançant la simple adaptació de solucions aplicades en altres indústries. Finalment, s’exposaran algunes tendències que es preveu que poden influir notablement en una major implantació dels sensors actuals i en el desenvolupament de nous sensors.

Educación y los nuevos medios : (reflexiones sobre los medios y su papel en una sociedad tecnológica : Pedagogía de los medios y Pedagogía en los medios).

Resumen tomado de la publicación

Prospectiva y vigilancia tecnológica en la cadena fibra-textil-confecciones. Mapa tecnológico estratégico, nuevos escenarios para el futuro de la cadena productiva fibra textil confección de Colombia

Este libro es el resultado de una investigación exhaustiva sobre el impacto que el cambio tecnológico tiene sobre la cadena productiva de fibra-textil-confección. Los autores logran demostrar cómo esta cadena pasó de ser utilizadora de tecnología a generadora de nuevas tecnologías, asociadas a la nueva economía digital, como lo son la biotecnología, la microelectrónica, las tecnologías de la información y la comunicación y la nano tecnología. Por lo tanto, dada la importancia del sector textil confección para Colombia, los autores llaman la atención sobre las consecuencias de esta situación. En este sentido, identifican las llamadas brechas de competitividad y tecnología que separan a las empresas colombianas frente al estado del arte de quienes lideran el sector a nivel mundial. Para cerrar las brechas, los autores proponen una cartera de proyectos que son presentados en su contexto sistémico, es decir, que buscan generar impactos en toda la cadena de valor, y no solamente hacia un solo eslabón de la misma.

La influencia de los nuevos soportes textuales en la formación del pensamiento.

La revolución tecnológica y cultural de la microelectrónica y la telemática que caracteriza el tiempo histórico actual presenta propuestas artefactuales que reclaman, como respuesta, la creación de 'más y diferente' valor- conocimiento, el que sólo será accesible y a su vez, se verá polibilitado por el desarrollo de 'personas inteligentes'. Entre los procesos de relevancia central a promover, es el de la lectura el fundamental como puerta de acceso a la construcción del saber, a fin de desafiar el desarrollo de las funciones superiores del pensamiento. Hoy, la producción, distribución e interacción de gran parte del valor-conocimiento producido incluyen, abarcan y se presentan en géneros innumerables y en múltiples formatos impresos y electrónicos, llegando a los ámbitos de la educación formal, ya que su presencia en la educación informal goza de una salud más aceptada. Así mismo habrá de reconocerse la aparición de y consolidación de las propuestas informático-multimedias las que no podrán disociarse de aquellas convencionalmente encarnadas en los textos impresos, donde tradicionalmente se confiaban a través del proceso de lectura, el desarrollo de la reflexión, la argumentación, el pensamiento crítico, etc. Estamos frente a nuevos escenarios pedagógicos dentro del tránsito actual de paradigmas de 'transmisión' hacia la 'interacciíon' en la comprensión del mundo, la vida y de la persona. Ello reclama serios desafíos en los diseños didácticos al articular todas y las diversas propuestas de enfoques, textual e hipertextual y que serán presentadas a los estudiantes de diversa edad en los diferentes ámbitos educativos que se encuentren..