Annealing kinetics of vacancy-related defects in low-dose MeV self-ion-implanted n-type silicon

Autoria(s): Pellegrino, Paolo; Leveque, P.; Hallen, A.; Lalita, J.; Jagadish, C.(Chennupati); Svensson, Bengt G.
Data(s)

28/12/2009

28/12/2009

2001
Formato

10 p.

application/pdf
Identificador

0163-1829

http://hdl.handle.net/2445/10599

521835
Idioma(s)

eng
Publicador

The American Physical Society
Relação

Reproducció digital del document publicat en format paper, proporcionada per PROLA i http://dx.doi.org/10.1103/PhysRevB.64.195211

Physical Review B, 2001, vol. 64, núm. 19, p. 195211-195221
Direitos

(c) The American Physical Society, 2001

info:eu-repo/semantics/openAccess
Palavras-Chave #Microelectrònica #Dispositius magnètics #Microelectronics #Magnetic devices
Tipo

info:eu-repo/semantics/article
Acesso ao item digital