High-speed 2 x 2 silicon-based electro-optic switch with nanosecond switch time

A 2 x 2 electro-optic switch is experimentally demonstrated using the optical structure of a Mach-Zehnder interferometer (MZI) based on a submicron rib waveguide and the electrical structure of a PIN diode on silicon-on-insulator (SOI). The switch behaviour is achieved through the plasma dispersion effect of silicon. The device has a modulation arm of I mm in length and cross-section of 400 nmx340 nm. The measurement results show that the switch has a V pi L pi figure of merit of 0.145 V-cm and the extinction ratios of two output ports and cross talk are 40 dB, 28 dB and -28 dB, respectively. A 3 dB modulation bandwidth of 90 MHz and a switch time of 6.8 ns for the rise edge and 2.7 ns for the fall edge are also demonstrated.

Effect of InxGa1-xAs (0 <= x <= 0.4) capping layer on self-assembled 1.3 mu m wavelength InAs/GaAs quantum islands

We report the effect of InchiGa1-chiAs (0 less than or equal to chi less than or equal to0.4) capping layer on photoluminescence (PL) properties of 1.3 mum wavelength self-assembled InAs quantum islands, which are formed via depositing 3.5 monolayers (ML) InAs on GaAs (1 0 0) substrate by molecular beam epitaxy (MBE). Compared with the InchiGa1-chiAs capping layer containing a larger In mole fraction chi greater than or equal to0.2 and the GaAs capping layer (chi = 0), the InAs islands covered by the In0.1Ga0.9As layer show PL with lower emission energy, narrower full-width at half-maximum (FWHM), and quite stronger intensity. The PL peak energy and FWHM become more temperature dependent with the increase of In content in the InchiGa1-chiAs capping layer (chi greater than or equal to0.2), while the InAs islands covered by the In0.1Ga0.9As layer is much less temperature sensitive. In addition, the InAs islands covered by the In0.1Ga0.9As capping layer show room temperature PL wavelength at about 1.3 mum. (C) 2001 Published by Elsevier Science B.V.

离子取代对稀土－铜复合氧化物的结构、电性和磁性的影响

本论文工作主要研究了各种离子取代对Y_2Cu_2O_5和 La_2CuO_4的结构、电性和磁性的影响。通过离子取代，得到了很多有这两种不同结构的化合物的磁结构方面的信息。本论文工作的主要结论如下：1、In_2Cu_2O_5 与Y_2Cu_2O_5 在晶体结构上同构；2、Ca~(2+) 取代Y~(3+) 或Sr~(2+)取代La~(3+)，使 Y_(2-x)Ca_xCu_2O_5，和 La_(2-x)Sr_xCuO_4中存在一定量的 Cu~(3+)（三价铜）；3、Zn~(2+)和 Mg~(2+)取代Y_2Cu_2O_5中的 Cu~(2+) 后，通过切断铁磁交换链来降低 Cu~(2+) 的有效磁矩，同时也使Weiss常数向低温方向移动；4、各种离子取代，无论取代的是 Cu~(2+) 还是La~(3+)，都会使 La_2CuO_4中的CuO_4 平面的磁学性质发生彻底改变，即使其Neel温度消失。此外，我们还研究了 N_2H_4 在GC电极和 PCoPP/GC 修饰电极上的阳极氧化机理。

2 x 2 electrooptical switch in silicon-on-insulator waveguide

A 2 x 2 Mach-Zehnder interferometer electrooptical switch integrated in silicon-on-insulator using multimode interference 3-dB couplers as splitter and combiner has been proposed and fabricated. Free carriers plasma dispersion effect was utilized to realize light modulation in silicon. Switching operation was achieved at an injection current of 358mA and which can be much reduced by optimizing the PIN structure and improving fabrication process. Extinction ratio of 7.7dB and crosstalk of 4.8dB has been observed.

激波管壁AlO自由基B~2∑~+-X~2∑~+和C~2∏_r-X~2∑~+带系辐射光谱的研究

爆轰驱动过程中产生的高温高压气流对铝质膜片、激波管壁产生烧蚀和冲刷作用,以致激波管壁、端盖上附有氧化铝等杂质,而高温下AlO自由基在气体分子的高速碰撞下被激发并产生强烈的辐射,从而干扰了高温气体辐射光谱的分析。用爆轰驱动加热技术将空气加热到4 000~7 000 K,利用多通道光学分析仪对AlO自由基辐射光谱进行分析,实验发现在460~530 nm波长范围内有多支辐射非常强烈的AlO自由基B2Σ+-X2Σ+(T00=20 689 cm-1)带系辐射谱带,且每支谱带都由多个带头组成,带头间隔约为2 nm,带头处于高频位置并向低频方向伸延。通过实验与理论计算相结合,重点分析了AlO自由基B2Σ+-X2Σ+带系辐射光谱的结构特征。AlO自由基C2Πr-X2Σ+(T00=33 047 cm-1)带系辐射光谱处于270~335 nm波长范围内,其辐射强度相对于B2Σ+-X2Σ+带系较弱,并且与OH基A2Σ+-X2Π(T00=32 682 cm-1)带系辐射光谱互相干扰而难以分辨,对该波段高温空气的辐射光谱分析产生不利的影响。

Twisted duality symmetry and integrability of hybrid superstring on AdS(2) x S-2

IEECAS SKLLQG

Structure of coordination polymer, [Zn(bipy)(H2O)(3)SO4] center dot 2H(2)O (bipy=4,4 '-bipyridine)

The crystal of the title compound (C10H18N2O9SZn M-r=407.69) belongs to the hexagonal system, space group P 6(5) with cell parameters: a=11.411 (2), c=20.908(4) Angstrom, V=2357.7(7) Angstrom(3), Z=6, D-c=1.723g/cm(3), F(000)=1260, mu(MoKa)=1.743mm(-1). The final R and omega R factors are 0.072 and 0.178 respectively for 1335 observed reflections. in the structure, zinc ions are bridged by 4,4'-bipyridine to form infinite chains. The sheets containing parallel chains stack along a 65 screw axis to give a helical staircase motif. The helical structure is mainly controlled by the hydrogen bonds.

三苯基锡-2-(1,2-亚乙二硫)亚甲基-3-羰基-5-芳基-4-戊烯酸酯的合成及晶体结构

由2-(1,2-亚乙二硫)亚甲基-3-羰基-5-芳基-4-戊烯酸与三苯基氢氧化锡反应,合成了九个标题化合物3.用X射线衍射法测定了3b的晶体结构.该晶体属三斜晶系,空间群Pl,α=0.9074(2)nm,b=1.6809(3)nm,c=2.1834(4)nm,α=77.57(3)°,β=88.04(3)°,γ=89.47(3)°,V=3.2503nm~3,Z=2;R=0.0592.由锡氧原子间距离可推测,该晶体中羧酸根作为双齿配体与锡原子形成了分子内五配位结构.

Ce_(1-x)Sm_xO_(2-x/2)的溶胶-凝胶法的合成及氧空位的研究

本文利用溶胶-凝胶法合成了Ce_(1-x)Sm_xO_(2-x/2)(x=0-0.4)系列固体电解质,并且系统地研究了其晶体结构随Sm含量的变化关系。XRD表明:该体系从160℃开始即形成了立方萤石结构,且在所研究的组成范围内全部形成了单相固溶体。此温度远低于传统的高温固相合成法所需的温度,同时也较水热合成法的温度低。高温X-ray衍射研究表明直到800℃Ce_(1-x)Sm_xO_(2-x/2)未出现结构相转变,其晶格常数和晶胞体积随温度升高而增大。EPR测试证实了由于Sm~(3+)部分置换Ce~(4+)固溶体中所存在的单电荷缺陷(Sm_(Ce’),V_o~(oo))结构。在固溶体的Raman谱中观察到:纯CeO_2在465cm~(-1)仅有一个Raman振动模式,随着掺杂量的增大,此振动模式向低频方向移动,而且Raman线变宽且在570cm~(-1)附近出现一新的峰,这些变化都是由Sm~(3+)取代Ce~(4+)所产生的氧空位引起的。

Metal ion and anion coordination in the thiamine-[Pt-II(NO2)(4)](2-) system. Structures of a metal complex, Pt(thiamine)(NO2)(3), and two salts, (H-thiamine)[Pt(NO2)(4)]center dot 2H(2)O and (thiamine monophosphate)(2)[Pt(NO2)(4)]center dot 2H(2)O

Reaction of thiamine or thiamine monophosphate (TMP) with K2Pt(NO2)(4) afforded a metal complex, Pt(thiamine)(NO2)(3) (1), and two salt-type compounds, (H-thiamine)[Pt(NO2)(4)]. 2H(2)O (2) and (TMP)(2)[Pt(NO2)(4)]. 2H(2)O (3), which were structurally characterized by X-ray diffraction. In 1, the square-planar Pt2+ ion is coordinated to the pyrimidine N(1'), a usual metal-binding site, and three NO2- groups. The thiamine molecule exists as a monovalent cation in 1 and a divalent cation in 2 while the TMP molecule is a monovalent cation in 3. In each compound, thiamine or TMP adopts the usual F conformation and forms two types of host-guest-like interactions with anions, which are of the bridging forms, C(2)-H . . . anion . . . pyrimidine-ring and N(4'1)-H(...)anion(...)thiazolium-ring. In 3, there is an additional anion-bridging interaction between the pyrimidine and thiazolium rings of TMP, being of the form C(6')-H . . . anion . . . thiazolium-ring. The salts 2 and 3 show similar hydrogen-bonded cyclic dimers of thiamine or TMP between which the anions are held. Results are compared with those of the other thiamine-platinum complexes. (C) 2001 Elsevier Science B.V. All rights reserved.

三环己基锡-2-(1,2-亚乙二硫)亚甲基-3-羰基-5-芳基-4-戊烯酸酯的结构研究

合成了 3个三环己基锡 -2 -( 1 ,2 -亚乙二硫 )亚甲基 -3-羰基 -5 -芳基 -4 -戊烯酸酯化合物 .用 IR,1 H NMR,1 3 C NMR和 1 1 9Sn NMR光谱及 X射线衍射对所合成的化合物进行了表征 .结果表明标题化合物为四配位、具有畸变四面体结构的锡酯类化合物

The use of half-sandwich iridium dithiolate and diselenolate complexes, Cp*Ir(L)(ER)(2) (L = CO, PMe3, PPh3; ER = SPh, SePh, SeMe), for the synthesis of heterodimetallic compounds. The molecular structure of Cp*Ir(CO)(mu-SePh)(2)[Mo(CO)(4)]

Carbonyl-iridium half-sandwich compounds, Cp*Ir(CO)(EPh)(2) (E = S, Se), were prepared by the photo-induced reaction of Cp*Ir(CO)(2) with the diphenyl dichalcogenides, E2Ph2, and used as neutral chelating ligands in carbonylmetal complexes such as Cp*Ir(CO)(mu-EPh)(2)[Cr(CO)(4)], Cp*Ir(CO)(mu-EPh)(2)[Mo(CO)(4)] and Cp*Ir(CO)(mu-EPh)(2)[Fe(CO)(3)], respectively. A trimethylphosphane - iridium analogue, Cp*Ir(PMe3)(mu-SeMe)(2)[Cr(CO)(4)], was also obtained. The new heterodimetallic complexes were characterized by IR and NMR spectroscopy, and the molecular geometry of Cp*Ir(CO)(mu-SePh)(2)[Mo(CO)(4)] has been determined by a single crystal X-ray structure analysis. According to the long Ir...Mo distance (395.3(1) Angstrom), direct metal-metal interactions appear to be absent. (C) 1998 Elsevier Science S.A. All rights reserved.

La_(1-x)Pr_xP_5O_(14)晶体的发光

Pr~(3+)离子的能级结构丰富,在紫外可见区有很好的荧光发射。因此,以Pr~(3+)为激活离子的发光材料研究工作引起了人们的关注。轻稀土五磷酸盐晶体结构为单斜晶系,空间群为P_(1/2)/C,稀土离子处在隔离的多面体中,离子间的作用减弱,即使在化学计量比的PrP_5O_(14)仍得到激光输出。本文采用水热法生长出La_(1-x)Pr_xP_5O_(14)

Roles of oxygen vacancy and lower valence metallic ion in direct decomposition of NO over La-2-x(Sr,Th)(x)CuO4+/-lambda

Two systems of La2-xSrxCuO4+/-lambda and La2-xThxCuO4+/-lambda, mixed oxides with K2NiF4 structure were synthesized. The compositions and structures of the catalysts were characterized by means of XRD, XPS, chemical analysis and so on. The catalytic behavior for the direct decomposition of NO has been investigated. The results show that the catalytic activity is closely related to the oxygen vacancy and lower valence metallic ion in the direct decomposition of NO. The presence of oxygen vacancy is necessary for mixed oxide to have steady activity in NO decomposition.