单脉冲和多脉冲飞秒激光对单层光学薄膜的损伤

利用掺钛的蓝宝石飞秒激光系统输出的单脉冲和多脉冲飞秒激光（中心波长800nm，脉宽50fs,靶面聚焦直径Ф40／μm）。分别对BK7玻璃基底上厚约500nm的单层HfO2和单层ZrO2薄膜进行辐照,得到了这两种薄膜在1-on-1和1000-on-1测试方法下的激光损伤阙值。实验发现,两种方法下HfO2单层膜的阈值均比ZrO2单层膜的阈值高。从简化的Keldysh多光子离化理论出发，认为HfO2薄膜材料的带比ZrO2的宽是导致上述结果的主要原因。同时，同一种薄膜的多脉冲下的阙值比单脉冲下的低，原因是多脉冲下

多层介质膜光栅和介质膜反射镜抗激光损伤阈值研究

对多层介质膜光栅以及介质膜反射镜的激光损伤阈值进行了系统的研究。测试方法采用国际测试标准。测试结果表明，介质光栅的损伤阈值远低于未刻蚀的多层介质膜。对样品损伤形貌的扫描电镜照片分析发现，相比于未刻蚀的多层介质膜，介质膜光栅的初始损伤主要发生在光栅槽形的侧壁，且损伤主要是由驻波场的空间分布引起的本征吸收、制备过程中引入的杂质污染以及刻蚀过程中HfO2的化学计量机失衡引起的。

多层介质膜脉冲压缩光栅近场光学特性分析

利用傅里叶模式理论分析了TE波自准直角入射的使用条件下，多层介质膜光栅的光栅区和多层膜区电场分布的特点．分别讨论了HfO2和SiO2为顶层光栅材料时，光栅结构参数对光栅脊峰值电场的影响，结果表明，对于不同膜厚的顶层材料，存在一个最佳膜厚度，使光栅脊峰值电场最小，并且当膜厚增大时，设计大高宽比的光栅可以降低该电场峰值．最后，在大角度条件下使用多层膜光栅也可以降低光栅脊处的峰值电场．

多层介质膜脉宽压缩光栅的严格矢量分析

用于展宽和压缩激光脉冲的多层膜脉宽压缩光栅是由多层介质高反膜和位于其顶层的浮雕光栅构成。以设计的高反射多层膜为基础，利用傅里叶模式理论分析了其衍射场分布，给出了TE波自准直角入射的使用条件下，多层介质膜脉宽压缩光栅衍射效率的表达式。以-1级衍射效率为评价函数，分别讨论了HfO2和SiO2为顶层材料时，多层膜脉宽压缩光栅-1级衍射效率高于0．95的光栅结构参量范围。结果表明，在该条件下，选择HfO2为顶层材料时，光栅结构参量有较大的取值范围。给出了优化的光栅结构参量，并分析了光栅制作误差及其使用条件的宽容度

飞秒激光用多层介质膜脉宽压缩光栅的设计

以薄膜光学的干涉理论和衍射光学的傅里叶模式理论为基础，给出了0．8μm飞秒激光器用多层介质膜脉宽压缩光栅的理论设计；设计采用H3L（HL）^9H0．5L2．4H的多层介质膜为基底，当刻蚀后表面浮雕结构的占宽比为0．35，线密度为1480线／mm，槽深为0．2μm，顶层HfO2的剩余厚度为0．15μm时，对于Littrow角度（36．7°）和TE波模式入射的衍射光栅其-1级衍射效率达到95％以上．

负离子元素杂质破坏模型

探讨了HfO2薄膜中负离子元素杂质破坏模型，并得出薄膜中的杂质主要来源于镀膜材料。用电子束蒸发方法沉积两种不同Cl元素古量的HfO2薄膜，测定薄膜弱吸收和损伤阈值来验证负离子元素破坏模型。结果表明，随着Cl元素含量的增加薄膜的弱吸收增加损伤阈值减小。这主要是因为负离子元素在蒸发过程中形成挥发性的气源中心而产生缺陷，缺陷在激光辐照过程中又形成吸收中心．因此负离子元素的存在将加速薄膜的破坏。

制备工艺条件对薄膜微结构的影响

用不同的方法在石英玻璃，YAG晶体，K9玻璃和LiNbO3晶体等几种衬底上制备了ZrO2，HfO2和TiO2薄膜。HfO2薄膜利用电子束蒸发（EB）、离子束辅助（IAD）和双束离子束溅射（DIBS）三种方法沉积。对其中的一些样品进行了不同温度下的退火处理，对所有的样品进行X射线衍射（XRD）测试，以获得不同条件下得到的薄膜的晶相及晶粒尺寸等的微结构参数。实验结果表明，薄膜的晶相结构以及晶粒尺寸强烈地依赖于沉积过程的各种技术参数，如衬底的种类、沉积温度、沉积方法和退火温度。利用薄膜表面扩散以及薄膜成核长大热

用于掺钛蓝宝石激光系统的高反膜的激光损伤

用电子束蒸发制备了用于掺钛蓝宝石啁啾脉冲放大激光系统的TiO2/HfO2/SiO2高反膜，其带宽约为176nm（R>98%, λ0=800nm），激光损伤阈值（LIDT）为2.4 J/cm2。通过TiO2和HfO2单层膜的透过光谱计算了这两种材料的折射率和消光系数。高反膜的性能主要由高折射率材料决定：折射率越高，反射带越宽；消光系数越小，薄膜吸收越小，LIDT越高。最后，讨论了高反膜的激光损伤机制。

Characteristics of high reflection mirror with an SiO2 top layer for multilayer dielectric grating

The high reflection (HR) mirror composed of dielectric stacks with excellent spectrum characteristics and high damage resistant ability is critical for fabricating multilayer dielectric (MLD) grating for pulse compressor. The selection of the SiO2 material as the top layer of the HR mirror for grating fabrication is beneficial for improving the laser-induced damage threshold of MLD grating as well as minimizing the standing-wave effect in the photoresist during the exposure process. Based on an (HLL) H-9 design comprising quarter-waves of HfO2 ( H) and half-waves of SiO2 ( L), we obtain an optimal design of the HR mirror for MLD grating, the SiO2 top layer of which is optimized with a merit function including both the diffraction efficiency of the MLD grating and the electric field enhancement in the grating. Dependence of the performance of the MLD grating on the fabrication error of the dielectric mirror is analysed in detail. The HR mirror is also fabricated by E-beam evaporation, which shows good spectral characteristics at the exposure wavelength of 413 nm and at the operation wavelength of 1053 nm and an average damage threshold of 10 J cm(-2) for a 12 ns pulse.

Optimization of thin-film design for multi-layer dielectric grating

Thin-film design used to fabricate multi-layer dielectric (MLD) gratings should provide high transmittance during holography exposure, high reflectance at use wavelength and sufficient manufacturing latitude of the grating design making the MLD grating achieve both high diffraction efficiency and low electric field enhancement. Based on a (HLL)H-9 design comprising of quarter-waves of high-index material and half-waves of low-index material, we obtain an optimum MLD coating meeting these requirements by inserting a matching layer being half a quarter-wave of Al2O3 between the initial design and an optimized HfO2 top layer. The optimized MLD coatings exhibits a low reflectance of 0.017% under photoresist at the exposure angle of 17.8 degrees for 413 nm light and a high reflectance of 99.61% under air at the use angle of 51.2 degrees for 1053 nm light. Numerical calculation of intensity distribution in the photoresist coated on the MLD film during exposure shows that standing-wave patterns are greatly minimized and thus simulation profile of photoresist gratings after development demonstrates smoother shapes with lower roughness. Furthermore, a MLD gratings with grooves etched into the top layer of this MLD coating provides a high diffraction efficiency of 99.5% and a low electric field enhancement ratio of 1.53. This thin-film design shows perfect performances and can be easily fabricated by e-beam evaporation. (c) 2006 Elsevier B.V. All rights reserved.

Influence of deposition conditions on the microstructure of oxides thin films

Thin films of ZrO2, HfO2 and TiO2 were deposited on kinds of substrates by electron beam evaporation (EB), ion assisted deposition (IAD) and dual ion beam sputtering (DIBS). Then some of them were annealed at different temperatures. X-ray diffraction (XRD) was applied to determine the crystalline phase and the grain size of these films, and the results revealed that their microstructures strongly depended on the deposition conditions such as substrate, deposition temperature, deposition method and annealing temperature. Theory of crystal growth and migratory diffusion were applied to explain the difference of crystalline structures between these thin films deposited and treated under various conditions. (c) 2007 Elsevier B.V. All rights reserved.

基底对光学薄膜弱吸收测量的影响

对表面热透镜技术测量光学薄膜弱吸收低频调制时不同基底对测量的影响进行了理论分析。用Lambda-900分光光度计测量了K9和石英基底的Ti3O5单层膜的吸收值，将该组样品作为定标片；用表面热透镜装置分别测量了BK7和石英空白基底及HfO2，ZnO两组不同基底不同厚度单层膜样品的吸收。通过分析比较同一工艺条件下镀制的不同基底薄膜样品用与其同种和不同种基底定标片定标测量的结果，表明在低频测量时需要用与测量样品同种基底的定标片定标；不同厚度样品的测量结果表明，在不能严格满足热薄条件时，测量结果需引入修正值。

离子束辅助反应制备的氧化铪薄膜特性

采用电子束直接蒸发氧化铪、无辅助电子束反应蒸发和离子束辅助反应蒸发金属铪3种沉积方式制备了单层HfO2薄膜,对样品的光学性能、结构特性以及激光损伤特性进行了研究。实验结果表明:通过反应沉积的方法可以有效减少缺陷产生并改善均匀性,施加离子辅助可以提高薄膜的折射率,在一定条件下还可以有效地降低吸收,但激光损伤阈值仍未达到直接采用氧化铪制备的水平;晶体结构方面,离子辅助条件下可以获得单斜相氧化铪薄膜,并且随着轰击能量的提高由(002)面的择优取向向(-111)面转变。

基于严格耦合波理论的多层介质膜光栅衍射特性分析

基于严格耦合波理论建立了多层介质膜光栅的衍射机理模型,给出了TE波自准直条件下多层介质膜光栅衍射效率的表达式.以-1级衍射效率为评价函数,分析了表面浮雕结构分别为HfO2和SiO2材料的介质膜光栅获得衍射效率优于96%的结构参数.数值计算表明,顶层材料为HfO2的介质膜光栅具有更宽的结构选择范围.最后分析了介质膜光栅的制备容差和允许的入射角度范围.

Working pressure dependence of properties of Al2O3 thin films prepared by electron beam evaporation

The effects of working pressure on properties of Al2O3 thin films are investigated. Transmittance of the Al2O3 thin film is measured by a Lambda 900 spectrometer. Laser-induced damage threshold (LIDT) is measured by a Nd:YAG laser at 355nm with a pulse width of 7ns. Microdefects were observed under a Nomarski microscope. The samples are characterized by optical properties and defect, as well as LIDT under the 355 nm Nd: YAG laser radiation. It is found that the working pressure has fundamental effect on the LIDT. It is the absorption rather than the microdefect that plays an important role on the LID T of Al2O3 thin film.