Modeling of Channel Potential and Subthreshold Slope of Symmetric Double-Gate Transistor

A new physically based classical continuous potential distribution model, particularly considering the channel center, is proposed for a short-channel undoped body symmetrical double-gate transistor. It involves a novel technique for solving the 2-D nonlinear Poisson's equation in a rectangular coordinate system, which makes the model valid from weak to strong inversion regimes and from the channel center to the surface. We demonstrated, using the proposed model, that the channel potential versus gate voltage characteristics for the devices having equal channel lengths but different thicknesses pass through a single common point (termed ``crossover point''). Based on the potential model, a new compact model for the subthreshold swing is formulated. It is shown that for the devices having very high short-channel effects (SCE), the effective subthreshold slope factor is mainly dictated by the potential close to the channel center rather than the surface. SCEs and drain-induced barrier lowering are also assessed using the proposed model and validated against a professional numerical device simulator.

Within-Die Gate Delay Variability Measurement using Re-configurable Ring Oscillator

We report a circuit technique to measure the on-chip delay of an individual logic gate (both inverting and non-inverting) in its unmodified form using digitally reconfigurable ring oscillator (RO). Solving a system of linear equations with different configuration setting of the RO gives delay of an individual gate. Experimental results from a test chip in 65nm process node show the feasibility of measuring the delay of an individual inverter to within 1pS accuracy. Delay measurements of different nominally identical inverters in close physical proximity show variations of up to 26% indicating the large impact of local or within-die variations.

Within-Die Gate Delay Variability Measurement Using Reconfigurable Ring Oscillator

We report the design and characterization of a circuit technique to measure the on-chip delay of an individual logic gate (both inverting and noninverting) in its unmodified form. The test circuit comprises of digitally reconfigurable ring oscillator (RO). The gate under test is embedded in each stage of the ring oscillator. A system of linear equations is then formed with different configuration settings of the RO, relating the individual gate delay to the measured period of the RO, whose solution gives the delay of the individual gates. Experimental results from a test chip in 65-nm process node show the feasibility of measuring the delay of an individual inverter to within 1 ps accuracy. Delay measurements of different nominally identicall inverters in close physical proximity show variations of up to 28% indicating the large impact of local variations. As a demonstration of this technique, we have studied delay variation with poly-pitch, length of diffusion (LOD) and different orientations of layout in silicon. The proposed technique is quite suitable for early process characterization, monitoring mature process in manufacturing and correlating model-to-hardware.

Garden gate to Daijas' father's house Architecture; Residences; Exterior

Verso: Das Gartentor zu Daijas Vaterhaus Georg lebete um die Ecke

The world of perovskite oxides: From dielectrics to superconductors

Some aspects of the properties of oxides of perovskite and K2 NiF4 structures are presented. Some of the interesting aspects discussed are intergrowths, orthorhombicity of superconducting cuprates and importance of holes on oxygen.

Effect of organic gate dielectric material properties on interfacial charging and discharging of pentacene MIM device

The effect of material properties of an environmentally friendly, optically transparent dielectric material, polyterpenol, on the carrier transients within the pentacene-based double-layer MTM device was investigated. Polyterpenol films were RF plasma polymerised under varied process conditions, with resultant films differing in surface chemistry and morphology. Independent of type of polyterpenol, time-resolved EFISHG study of IZO/polyterpenol/pentacene/Au structures showed similar transient behaviour with carriers injected into pentacene from Au electrode only, confirming polyterpenol to be a suitable blocking layer for visualisation of single-species carrier transportation during charging and discharging under different bias conditions. Polyterpenol fabricated under higher input power show better promise due to higher chemical and thermal stability, improved uniformity, and absence of defects.

Jer. (Jerusalem) - Temple Pl. (place) - Golden Gate

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EPR studies on donor doped BaTiO3 grain boundary layer ceramic dielectrics

Donor doped BaTiO3 ceramics become insulating5 under controlled conditions with effective dielectric constants >10. The changes in EPR signals indicate that a certain fraction of the donor doped BaTiO3 is cubic even at room temperature and that the cubic fraction increases with the donor content. X-ray powder diffraction data support the EPR results. The coexistence of both the phases over a range of temperature is characteristic of diffused phase transition. The effect of grain size variation on EPR signal intensities indicate that the boundary layers surrounding the grains may constitute the cubic phase as a result of higher Ba-vacancies and donor contents at the grain boundary layer than in the bulk. Since the acceptor states arising from the Ba-vacancies and the impurities are activated in the cubic phase, they capture electrons from the conduction band, rendering the cubic phase electrically more insulating than the semiconductive tetragonal grain interiors. Thus, the cubic grain boundary layers act as effective dielectric media where the field tends to concentrate.

Entrance Gate to Old City of Jerusalem

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The Gate, Internment camp at Huyton, near Liverpool.

Signed and dated lower right. See also 78.1689

Brillouin Scattering by Phonons Renormalized by Two-Magnon Excitations in Ferromagnetic Dielectrics

Brillouin scattering by one-phonon-two-magnon interacting excitations in ferromagnetic dielectrics is discussed. The basic light scattering mechanism is taken to be the modulation of the density-dependent optical dielectric polarizability of the medium by the dynamic strain field generated by the longitudinal acoustic (LA) phonons. The renormalization effects arising from the scattering of phonons by the two-magnon creation-annihilation processes have, however, been taken into account. Via these interactions, the Brillouin components corresponding to the two-magnon excitations are reflected indirectly in the spectrum of the phonon scattered light as line-broadening of the otherwise relatively sharp Brillouin doublet. The present mechanism is shown to be dominant in a clean saturated ferromagnetic dielectric with large magneto-strictive coupling constant, and with the magnetic ions in the orbitally quenched states. Following the linear response theory, an expression has been derived for the spectral density of the scattered light as a function of temperature, scattering angle, and the strength of the externally applied magnetic field. Some estimates are given for the line-width and line-shift of the Brillouin components for certain typical choice of parameters involved. The results are discussed in relation to some available calculations on the ultrasonic attenuation in ferromagnetic insulators at low temperatures.

A New Threshold Voltage Model for Omega Gate Cylindrical Nanowire Transistor

In this work, for the first time, we present a physically based analytical threshold voltage model for omega gate silicon nanowire transistor. This model is developed for long channel cylindrical body structure. The potential distribution at each and every point of the of the wire is derived with a closed form solution of two dimensional Poisson's equation, which is then used to model the threshold voltage. Proposed model can be treated as a generalized model, which is valid for both surround gate and semi-surround gate cylindrical transistors. The accuracy of proposed model is verified for different device geometry against the results obtained from three dimensional numerical device simulators and close agreement is observed.

Phase change on transmission of microwaves through metal disc delay dielectrics

Expressions for the phase change Φ suffered by microwaves when transmitted through an artificial dielectric composed of metallic discs arranged in a three-dimensional array have been derived with different approaches as follows (i) molecular theory, (ii) electromagnetic theory and (iii) transmission line theory. The phase change depends on the distance t that the wave traverses inside the dielectric and also the spacing d between centre to centre of any two adjacent discs in the three principal directions. Molecular theory indicates Φ as an increasing function of t, whereas, the other two theories indicate Φ as an oscillatory function of t. The transmission line theory also exhibits Φ to be real or imaginary depending on t. Experimental values of Φ as a function of t have been obtained with the help of a microwave (3·2 cms wavelength) interferometer for two dielectrics having d as 1·91 cms and 2·22 cms respectively.

A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors

Previous techniques used for solving the 1-D Poisson equation ( PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.

Synthesis, characterization and photoluminescence properties of Gd2O3:Eu3+ nanophosphors prepared by solution combustion method

Gd2O3:Eu3+ (0.5-8.0 mol%) nanophosphors have been prepared by low temperature solution combustion method using metal nitrates as oxidizers and oxalyl dihydrazide (ODH) as a fuel. The phosphors are well characterized by powder X-ray diffraction (PXRD), scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and photoluminescence (PL) techniques. PXRD patterns of as-formed and calcined (800 degrees C, 3 h) Gd2O3 powders exhibit monoclinic phase with mean crystallite sizes ranging from 20 to 50 nm. Eu3+ doping changes the structure from monoclinic to mixed phase of monoclinic and cubic. SEM micrographs shows the products are foamy, agglomerated and fluffy in nature due to the large amount of gases liberated during combustion reaction. Upon 254 nm excitation the photoluminescence of the Gd2O3:Eu3+ particles show red emission at 611 nm corresponding to D-5(0)-> F-7(2) transition. It is observed that PL intensity increases with calcination temperature. This might be attributed to better crystallization and eliminates the defects, which serve as centers of non-radiative relaxation for nanomaterials. It is observed that the optical energy gap (E-g) is widened with increase Eu3+ content. (C) 2010 Elsevier B.V. All rights reserved.