Filmes finos ferroelétricos do tipo PBCT, PBST e PCST: estudo experimental e teórico

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Obtenção e caracterização de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos

Pós-graduação em Engenharia Mecânica - FEG

Implantação iônica por imersão em plasma e deposição de filmes finos poliméricos provenientes da mistura hexametildisilazano/argônio

Thin polymeric films deposited by plasma are very atractive for many industrial and scientific applications, in areas such as electronics, mechanics, coatings, biomaterials, among others, due to its favorable properties such as good adhesion to the substrate, high crosslinking, nanomectric thickness, homogeneity, etc. In this work, thin films were deposited by plasma immersion ion implantation and deposition technique from a hexamethyldisilazane/argon mixture at different proportions. These films were subjected to several characterizations, such as, contact angle, which presented values near to 100 degrees, surface energy, with values near to 31 mJ/m2, hardness with values between 0.7 and 2.6 GPa, thickness from 100 to 200 nm, refractive index from 1.56 to 1.64, molecular structure presenting the following functional groups in the infrared spectra region: CHx from 2960 to 2900 cm-1; Si-H around 2130 cm-1; CH3 in Si-(CH3)x around 1410 cm-1; CH3 in Si-(CH3)x in 1260 cm-1; N-H around 1180 cm-1; CH2 in Si-CH2-Si bonds around 1025 cm-1; Si-O in Si-O-Si from 1020 to 1100 cm-1; Si-N in Si-H-Si bonds around 940 cm-1; CH3 in Si-(CH3)3 in 850 cm-1; Si-C bonds in Si-(CH3)2 around 800 cm-1; and Si-H in 680 cm-1 . From these characterizations, it was possible to conclude that the concentration of argon or hexamethyldisilazane in the mixture changed the resulting polymer

Preparação e caracterização de filmes finos ferroelétricos nanoestruturados do tipo Pb1-x(Ca,Ba)xTiO3

O rápido crescimento do mercado de dispositivos eletrônicos portáteis, com aplicações em diferentes áreas (telecomunicações, medicina, engenharia), criou uma grande demanda por fontes de potência compactas leves e, sobretudo, de baixo custo. Essa demanda levou ao desenvolvimento de tecnologia de filmes finos nanoestruturados para a obtenção de componentes eletroeletrônicos, por exemplo, memórias de computador. Estes dispositivos são empregados em “notebooks”, circuitos integrados, telefones celulares. O estudo de cristalização de filmes finos ferroelétricos nanoestruturados será feito através da cristalização induzida por rotas convencionais tal como cristalização em forno mufla. A modulação entre os diferentes cátions (Pb, Ca e Ba) para formar o sistema Pb1-x(Ca,Ba)xTiO3 serão analisadas, visando obter filmes com propriedades compatíveis para uso em memórias ferroelétricas. Para isso, os filmes finos serão depositados em substratos adequados controlando-se a homogeneidade química, a microestrutura e a interação filme-substrato

Síntese e caracterização dielétrica de filmes finos de Bi3NbO7 obtidos pelo método dos precursores poliméricos

Bi3NbO7 thin films were prepared by the polymeric precursor method. The precursor solutions were prepared with excess of bismuth ranging from 0% to 10% and the pH was controlled to be maintained between 8 and 9. This control was done by adding to the solution niobium and ethylene glycol. The final solution was clear and free of precipitation. After obtaining the precursor solution, has begun the process of characterization of powders with thermogravimetry (TG), differential thermal analysis and X-ray analysis (XRD). The films were obtained by the polymeric precursors, the method is advantageous because it is simple, and low cost involves steps and controlled stoichiometry. The films were annealed and characterized by XRD and SEM and also characterized according to their dialectics properties. We observed that the best results were obtained when the film is thermally at 800 ° C for two hours and 860 ° C for two hour. Under these conditions we obtain Bi3NbO7 thin films with good homogeneity, uniform distribution of the grains, but with the formation of secondary phase, which does not occur in treatments with lower temperature. The dielectric characterization showed that the produced film showed good characteristics with high dielectric constant and low loss

Desenvolvimento de filmes finos de Bi3NbO7 pelo método dos precursores poliméricos em diferentes eletrodos óxidos

Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films

Síntese e caracterização de filmes finos de ferrita de bismuto dopados com cálcio visando aplicação em memórias de múltiplos estados

The increasing demand for electro-electronic devices, with high performance and multi-functional and the rapid advances of the nanotechnology require the development of new methods and techniques for the production and characterization of nanostructure materials and phenomenological models to describe/to predict some of its properties. The demand for multifunctionality requires, at least, new materials, that can integrate ferroelectric and magnetic properties of high technological interest. Inside of this context, multiferroics material can be considered suitable to integrate two or more physical properties of high technological interest. It can also provides new challenges in the processes of synthesis of new materials, and development of new devices with controlling and simulation of its physical properties and modeling. For this Calcium (Ca)-doped bismuth ferrite (BiFeO3) thin films prepared by using the polymeric precursor method (PPM) were characterized by X-ray diffraction (XRD), field emission gun scanning electron microscopy (FEG-SEM), transmission electron microscopy (TEM), polarization and piezoelectric measurements.In order to study the behavior and determine which are the most important parameters to achieve the optimal property to be applied to a multiferroic materials

Estudo da condutividade elétrica em filmes finos de derivados de politiofeno

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Propriedades ópticas e elétricas de materiais híbridos de sílica/orgânico à base de GPTS:TEOS preparados pelo método sol-gel

Fabrication of optoelectronic devices requires the employment of at least one transparent electrode. Usually, commercially transparent electrodes have been made by deposition of indium tin oxide (ITO) films by RF-Sputtering technique. These commercial electrodes have sheet resistance of about 100 Ω/sq and optical transmittance of 77% at the wavelength of 550 nm. The poly(3,4-ethylenedioxythiophene):polystyrene-sulfonate (PEDOT:PSS) is an alternative material to fabricate transparent electrodes due to its high conductivity (about 600 S/cm) and solubility in water. Soluble conductive materials exhibits advantages for processing of electrode layers, however there is a disadvantage during devices fabrication once materials with the same solvent of the electrode material cannot be coated one over the other. Alternatively, organic/Silica hybrid materials prepared by sol-gel process allow producing bulks and films with high chemical durability. In order to obtain transparent electrodes with high chemical durability, we introduced a blended material comprising the high UV-VIS transparency of organic/Silica sol-gel material and a high conductivity polymer PEDOT:PSS. The organic/Silica sol was obtained using two different molar concentrations (1:1 and 4:1), of tetraethylorthosilicate (TEOS) and 3-glycidoxypropyltrimethoxysilane (GPTS). Amounts of PEDOT:PSS solutions were added to the sol material, resulting in different weight fractions of sol and polymer. G:T/P:P were deposit onto glass substrates by spray-coating. In order to perform electrical characterization of the blended material, gold electrodes were thermally evaporated onto the films. The electrical characterization was performed using a Keithley 2410 source/meter unity and the optical characterization, using a Cary50 UV-Vis spectrophotometer. The absorption coefficient and electric conductivity of the different compositions blends, as function of the PEDOT:PSS concentration, were...

Crescimento epitaxial e caracterização de filmes finos: óxidos condutores e ferroelétricos preparados por deposição de solução química

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Filmes finos depositados pela técnica de implantação iônica por imersão em plasma e deposição (IIIPD), utilizando o monômero HMDSN e os gases argônio, hélio e nitrogênio

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo da cristalinidade de filmes finos de nitreto de índio e simulado pelo pacote de programas Wien2k

Neste trabalho, foi utilizado o método de deposição assistida por feixe de íons (IBAD na sigla em inglês) para produção de filmes finos de nitreto de índio em substratos de silício (111) e Safira-C. Variando as condições de deposição e utlilizando a técnica de difração de raios-X, investigou-se com o intuito de obter os parâmetros que resultam em filmes finos com melhor grau de cristalinidade. Os filmes produzidos a 380C apresentaram alta cristalinidade, superior àqueles a 250C. Temperaturas muito superiores a 380C não ocasionam a formação de filme cristalino de InN, como foi observado ao utilizar a temperatura de 480C; o mesmo se observa ao utilizar temperatura ambiente. Na temperatura considerada adequada ,de 380C, obteve-se que a utilização de Ra, ou seja, a razão de fluxo de partículas entre o nitrogênio e índio, em torno de 2,3 permite obter um melhor grau de cristalinização, o qual decresce conforme se diverge desse valor. A comparação entre difratogramas de amostras produzidas com e sem a evaporação prévia de titânio, o qual é possível observar um deslocamento dos picos do InN, indicam que o efeito Gettering permite a redução de impurezas no filme, principalmente de oxigênio. Utilizou-se a técnica de Retroespalhamento de Rutherford para obtenção da composição dos elementos e o perfil de profundidade. Notou-se uma forte mistura dos elementos do substrato de silício e safira com o nitreto de índio mesmo próximos a superfície. A presença indesejável de impurezas, principalmente o oxigênio, durante a deposição de filmes finos é praticamente inevitável. Desta forma, cálculos ab initio baseados na Teoria do Funcional da Densidade (DFT) foram realizados para investigar defeitos isolados e complexos de oxigênio no nitreto de índio e a sua influência nas propriedades óticas. Considerou-se diferentes concentrações de oxigênio (x=2,76, 8,32, 11,11 e 22,22%) aplicando-se o método PBEsolGGA e TB-mBJ para o tratamento da energia e potencial de troca e correlação. Obteve-se que é energeticamente favorável o oxigênio existir principalmente como defeito carregado e isolado. Os resultados utilizando a aproximação de TB-mBJ indicam um estreitamento do bandgap conforme a concentração de oxigênio aumenta. Entretanto, a alta contribuição do efeito de Moss-Burstein resulta num efetivo alargamento do band gap, gerando valores de band gap ótico maiores que no do bulk de nitreto de índio.

Modificação do eletrodo AWS E7018 com adição de filmes finos externos de PVC e Al, para soldagem de aço C-Mn

This paper suggests modifications in coating of electrodes providing an alternative for execution of welding with low hydrogen electrode AWS E7018 without having to dry it, reducing thus the cost and time of manufacturing of high resistance welds. The welds in this research were developed with basic coated electrodes (hygroscopic) – SMAW process – externally painted with aluminum spray paint for high temperatures or wrapped with thin plastic films (PVC) and aluminum foil films used commonly for food protection. The basic premise is that establishing a barrier between the atmosphere and the electrode coating could reduce the effects of high hygroscopicity presented by coatings of low hydrogen, minimizing this way the main source of supply of hydrogen to the fusion pool during welding. It is also expected that the addition of new materials from the electrode coating to the fusion pool would induce metallurgical changes in the deposited metal and, as a consequence, modifications in its mechanical properties. This research dealt with measuring the dissolved hydrogen in the deposited metal after welding with modified electrodes, evaluating the influence of these changes in the produced microstructures and in the mechanical properties of the resulting weld, and comparing the obtained results with the standard welding procedures and with the recently developed waterproof electrodes. The results obtained in most samples welded with modified electrodes showed increased mechanical resistance and increased tenacity due to the increased percentage of acicular ferrite in metal deposited without significant elevation of hardness, when compared with the traditional welding with AWS E7018 electrode and with ELBRÁS BRH4R waterproof electrode. The diffusing hydrogen measured in the modified electrodes was kept inside the parameters defined by international codes.

Modificação do eletrodo AWS E7018 com adição de filmes finos externos de PVC e Al, para soldagem de aço C-Mn

This paper suggests modifications in coating of electrodes providing an alternative for execution of welding with low hydrogen electrode AWS E7018 without having to dry it, reducing thus the cost and time of manufacturing of high resistance welds. The welds in this research were developed with basic coated electrodes (hygroscopic) – SMAW process – externally painted with aluminum spray paint for high temperatures or wrapped with thin plastic films (PVC) and aluminum foil films used commonly for food protection. The basic premise is that establishing a barrier between the atmosphere and the electrode coating could reduce the effects of high hygroscopicity presented by coatings of low hydrogen, minimizing this way the main source of supply of hydrogen to the fusion pool during welding. It is also expected that the addition of new materials from the electrode coating to the fusion pool would induce metallurgical changes in the deposited metal and, as a consequence, modifications in its mechanical properties. This research dealt with measuring the dissolved hydrogen in the deposited metal after welding with modified electrodes, evaluating the influence of these changes in the produced microstructures and in the mechanical properties of the resulting weld, and comparing the obtained results with the standard welding procedures and with the recently developed waterproof electrodes. The results obtained in most samples welded with modified electrodes showed increased mechanical resistance and increased tenacity due to the increased percentage of acicular ferrite in metal deposited without significant elevation of hardness, when compared with the traditional welding with AWS E7018 electrode and with ELBRÁS BRH4R waterproof electrode. The diffusing hydrogen measured in the modified electrodes was kept inside the parameters defined by international codes.

Análise superficial em AFM de filmes finos com gradiente de composição em profundidade obtidos por codeposição catódica

Dissertação apresentada na Faculdade de Ciências e Tecnologia da Universidade Nova de Lisboa para obtenção do grau de Mestre em Engenharia Física