高速流动激光器的稳定振荡条件、模式结构与输出功率特性

本文直接由辐射场方程与边界条件导出了高速流动激光器的稳定振荡条件,指出了文献[1]所假定的稳定振荡条件仅在一定条件下近似成立,用本文得到的稳定振荡条件与文献[2]的饱和增益公式导出了GDL输出功率表达式,指出了输出功率与GDL各种参量之间的关系,用几何光学近似导出了光腔模式的解析表达式,指出了充有流动激活介质的Fabry-Perot腔的模式结构与特征.文中对Gerry的典型

Generation of attosecond pulses in a system with permanent dipole moment

The generation of attosecond pulses in a two-level system with permanent dipole moment is investigated. It is shown due to the presence of permanent dipole moments, that the plateau of the high-order harmonic generation spectrum can be extended to X-ray range. Moreover, attosecond pulses with higher intensity can be synthesized by using both even and odd harmonics because of their quantum interference. (c) 2006 Elsevier B.V. All rights reserved.

An Optically recombined laser interferometer for gravitational wave detection

Kilometer scale interferometers for the detection of gravitational waves are currently under construction by the LIGO (Laser Interferometer Gravitational-wave Observatory) and VIRGO projects. These interferometers will consist of two Fabry-Perot cavities illuminated by a laser beam which is split in half by a beam splitter. A recycling mirror between the laser and the beam splitter will reflect the light returning from the beam splitter towards the laser back into the interferometer. The positions of the optical components in these interferometers must be controlled to a small fraction of a wavelength of the laser light. Schemes to extract signals necessary to control these optical components have been developed and demonstrated on the tabletop. In the large scale gravitational wave detectors the optical components must be suspended from vibration isolation platforms to achieve the necessary isolation from seismic motion. These suspended components present a new class of problems in controlling the interferometer, but also provide more exacting test of interferometer signal and noise models.

This thesis discusses the first operation of a suspended-mass Fabry-Perot-Michelson interferometer, in which signals carried by the optically recombined beams are used to detect and control all important mirror displacements. This interferometer uses an optical configuration and signal extraction scheme that is planned for the full scale LIGO interferometers with the simplification of the removal of the recycling mirror. A theoretical analysis of the performance that is expected from such an interferometer is presented and the experimental results are shown to be in generally good agreement.

Spontaneous and stimulated light emission due to radiative recombination in forward biased lead telluride P-N junctions

Since the discovery in 1962 of laser action in semiconductor diodes made from GaAs, the study of spontaneous and stimulated light emission from semiconductors has become an exciting new field of semiconductor physics and quantum electronics combined. Included in the limited number of direct-gap semiconductor materials suitable for laser action are the members of the lead salt family, i.e . PbS, PbSe and PbTe. The material used for the experiments described herein is PbTe . The semiconductor PbTe is a narrow band- gap material (E_g = 0.19 electron volt at a temperature of 4.2°K). Therefore, the radiative recombination of electron-hole pairs between the conduction and valence bands produces photons whose wavelength is in the infrared (λ ≈ 6.5 microns in air).

The p-n junction diode is a convenient device in which the spontaneous and stimulated emission of light can be achieved via current flow in the forward-bias direction. Consequently, the experimental devices consist of a group of PbTe p-n junction diodes made from p –type single crystal bulk material. The p - n junctions were formed by an n-type vapor- phase diffusion perpendicular to the (100) plane, with a junction depth of approximately 75 microns. Opposite ends of the diode structure were cleaved to give parallel reflectors, thereby forming the Fabry-Perot cavity needed for a laser oscillator. Since the emission of light originates from the recombination of injected current carriers, the nature of the radiation depends on the injection mechanism.

The total intensity of the light emitted from the PbTe diodes was observed over a current range of three to four orders of magnitude. At the low current levels, the light intensity data were correlated with data obtained on the electrical characteristics of the diodes. In the low current region (region A), the light intensity, current-voltage and capacitance-voltage data are consistent with the model for photon-assisted tunneling. As the current is increased, the light intensity data indicate the occurrence of a change in the current injection mechanism from photon-assisted tunneling (region A) to thermionic emission (region B). With the further increase of the injection level, the photon-field due to light emission in the diode builds up to the point where stimulated emission (oscillation) occurs. The threshold current at which oscillation begins marks the beginning of a region (region C) where the total light intensity increases very rapidly with the increase in current. This rapid increase in intensity is accompanied by an increase in the number of narrow-band oscillating modes. As the photon density in the cavity continues to increase with the injection level, the intensity gradually enters a region of linear dependence on current (region D), i.e. a region of constant (differential) quantum efficiency.

Data obtained from measurements of the stimulated-mode light-intensity profile and the far-field diffraction pattern (both in the direction perpendicular to the junction-plane) indicate that the active region of high gain (i.e. the region where a population inversion exists) extends to approximately a diffusion length on both sides of the junction. The data also indicate that the confinement of the oscillating modes within the diode cavity is due to a variation in the real part of the dielectric constant, caused by the gain in the medium. A value of τ ≈ 10^-9 second for the minority- carrier recombination lifetime (at a diode temperature of 20.4°K) is obtained from the above measurements. This value for τ is consistent with other data obtained independently for PbTe crystals.

Data on the threshold current for stimulated emission (for a diode temperature of 20. 4°K) as a function of the reciprocal cavity length were obtained. These data yield a value of J’_th = (400 ± 80) amp/cm² for the threshold current in the limit of an infinitely long diode-cavity. A value of α = (30 ± 15) cm^-1 is obtained for the total (bulk) cavity loss constant, in general agreement with independent measurements of free- carrier absorption in PbTe. In addition, the data provide a value of n_s ≈ 10% for the internal spontaneous quantum efficiency. The above value for n_s yields values of t_b ≈ τ ≈ 10^-9 second and t_s ≈ 10^-8 second for the nonradiative and the spontaneous (radiative) lifetimes, respectively.

The external quantum efficiency (n_d) for stimulated emission from diode J-2 (at 20.4° K) was calculated by using the total light intensity vs. diode current data, plus accepted values for the material parameters of the mercury- doped germanium detector used for the measurements. The resulting value is n_d ≈ 10%-20% for emission from both ends of the cavity. The corresponding radiative power output (at λ = 6.5 micron) is 120-240 milliwatts for a diode current of 6 amps.

Cryogenic Silicon Optical Reference Cavities

Thermodynamical fluctuations in temperature and position exist in every physical system, and show up as a fundamental noise limit whenever we choose to measure some quantity in a laboratory environment. Thermodynamical fluctuations in the position of the atoms in the dielectric coatings on the mirrors for optical cavities at the forefront of precision metrology (e.g., LIGO, the cavities which probe atomic transitions to define the second) are a current limiting noise source for these experiments, and anything which involves locking a laser to an optical cavity. These thermodynamic noise sources scale physical geometry of experiment, material properties (such as mechanical loss in our dielectric coatings), and temperature. The temperature scaling provides a natural motivation to move to lower temperatures, with a potential huge benefit for redesigning a room temperature experiment which is limited by thermal noise for cryogenic operation.

We design, build, and characterize a pair of linear Fabry-Perot cavities to explore limitations to ultra low noise laser stabilization experiments at cryogenic temperatures. We use silicon as the primary material for the cavity and mirrors, due to a zero crossing in its linear coefficient of thermal expansion (CTE) at 123 K, and other desirable material properties. We use silica tantala coatings, which are currently the best for making high finesse low noise cavities at room temperature. The material properties of these coating materials (which set the thermal noise levels) are relatively unknown at cryogenic temperatures, which motivates us to study them at these temperatures. We were not able to measure any thermal noise source with our experiment due to excess noise. In this work we analyze the design and performance of the cavities, and recommend a design shift from mid length cavities to short cavities in order to facilitate a direct measurement of cryogenic coating noise.

In addition, we measure the cavities (frequency dependent) photo-thermal response. This can help characterize thermooptic noise in the coatings, which is poorly understood at cryogenic temperatures. We also explore the feasibility of using the cavity to do macroscopic quantum optomechanics such as ground state cooling.

基于法布里-珀罗干涉仪的毫米波副载波光学产生方法

在光纤无线电系统(ROF)中，提出了一种利用法布里-珀罗干涉仪来实现将一个光学脉冲转换为毫米波频率调制的光学脉冲的方法。在这种方法中，毫米波调制的频率是由法布里-珀罗干涉仪的腔长来决定的，而脉冲序列振幅衰减和能量转移效率则是由法布里-珀罗干涉仪的腔镜反射率决定的。同时，文中对输出脉冲宽度的扩展所导致的脉冲间的干涉问题也进行了详细阐述。

调Q及连续掺Yb光纤激光器中的自锁模研究

在用半导体激光器抽运的单包层掺Yb调Q光纤激光器中观察到了清晰稳定的自锁模脉冲序列。脉冲包络形状为调Q脉冲。每个锁模脉冲的幅值由其在调Q脉冲中的相应位置决定。经过分析，认为自相位调制是调Q光纤激光器中产生锁模的主要原因。自相位调制的存在使得光脉冲的频谱被展宽，当这种展宽和腔的模式间隔相差不多时，腔内的模式便能相互作用，直到它们之间产生一个固定的相位关系。也即形成锁模。在此基础上。去掉声光晶体，并用两个光栅作为腔镜，实现了全光纤法布里-珀罗(F-P)腔锁模光纤激光器。改变腔结构，分别采用光栅和光纤反射圈作为

Single mode Er-doped pi-phase-shifted distributed feedback fibre grating laser

A novel method incorporating the shielded method and the post-processing method has been proposed to fabricate the pi-phase-shilted fibre grating. Then an Er-doped pi-phase-shifted distributed feedback fibre grating laser has been fabricated using the grating. The laser threshold is 20 mW. When pumped with 90 mW light at 980 nm, the laser gives an output of 1.1 mW. Its signal-to-noise ratio is better than 60 dB. It is demonstrated that the laser is single mode operation by means of a Fabry-Perot scanning interferometer.

ICF中可调法布里-珀罗滤波器间距稳定度研究

在神光Ⅱ第9路ICF高功率激光装置中，采用可调法布里-珀罗（F-P）滤波器对幅度调制效应进行补偿，根据补偿装置的技术要求，提出-种应用nm量级精度的电容式位移传感器对可调F-P滤波器间距稳定度进行监控的系统，详细论述了监控系统的结构与工作原理。给出了电容式位移传感器的驱动电路及数据处理与控制软件的设计方案，并对电容式位移传感器的精度进行了标定。实验结果表明，该位移监控系统能够使可调F—P滤波器的间距稳定度保持在15nm／h以内，使幅度调制效应的调制深度优于4％。

激光稳频的共焦法布里-珀罗干涉仪

针对多普勒激光雷达激光源短期频率漂移低于1 MHz的要求,设计了一种共焦干涉仪作为频率标准进行稳频。通过对三种不同材料制成的共焦法布里-珀罗(Fabry-Perot)干涉仪中心频率随温度漂移情况进行分析对比,选用零膨胀微晶玻璃材料制作共焦法布里-珀罗干涉仪,腔镜和隔离器通过光胶的方式进行组合,并且置于温控精度优于0.01 K的双层密封温控箱中。经过实验测量,共焦法布里-珀罗干涉仪的自由光谱范围为370 MHz,透射谱半峰全宽(FWHM)为1.7 MHz,精细度为220。采用该共焦干涉仪进行稳频,理论稳频精度可达0.15 MHz,满足激光多普勒雷达单频激光源的稳频要求。

车载直接探测多普勒测风激光雷达光学鉴频器

基于建立的车载直接探测激光雷达系统，对接收光学鉴频器进行了研究。针对边界层、对流层和平流层不同的气溶胶和大气分子浓度以及风速动态范围，同时采用直接探测的两种主要技术。利用多光束菲索（Fizeau）干涉仪（MFI）和阵列光电倍增管（PMT），接收气溶胶散射信号，获得边界层风速。采用双法布里-珀罗（Fabry-Perot）干涉仪（DFP）和光电倍增管探测器，分析分子散射信号，得到对流层风场。使用实际的激光雷达系统参数和大气模型参数，对两个鉴频器进行了优化设计，分析了它们的风速测量灵敏度和精度。多光束菲索干涉仪

用于多普勒测风雷达的单频全固态激光器稳频

采用Pound-Drever-Hall技术，对用于多普勒测风雷达的种子注入激光器的主动激光器进行稳频，将其频率锁定在一个特殊设计的法珀腔上。该法珀腔总体采用零膨胀微晶玻璃材料制成，具有极高的温度稳定性。使用计算机采集鉴频信号并且进行处理。锁定后，1秒内激光器的相对频率漂移为±25kHz，一小时内的相对频率漂移为±55kHz，满足多普勒测风雷达的要求。

基于法珀标准具的激光稳频方法理论研究

介绍了使用法珀(Fabry-Perot,F-P)标准具作为频率标准的三种稳频方法,并且进行理论分析,分别得出了各种方法的鉴频曲线.通过对鉴频曲线进行比较发现边频锁定技术具有斜率大、信号强、控制范围广的优点,优于另外两种方法,是一种理想的激光稳频技术.

Measurement of polarisation dependent all-optical nonlinearity in GaAs/AlGaAs quantum well waveguides far from the bandedge

The all-optical nonlinearity of a quantum well waveguide is studied by measuring the intensity dependent transmission through a Fabry-Perot cavity formed around the guide. Values for the nonlinear refractive index coefficient, η 2, at a wavelength of 1.06μm are obtained for light whose polarisation is either parallel or perpendicular to the quantum well layers. A simple measurement to estimate the two photon absorption coefficient, B2, using relatively low optical power levels is also described.

Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.