836 resultados para Dielectric loss
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This paper focuses on the magnetoelectric coupling (ME) at room temperature in lanthanum modified bismuth ferrite thin film (BLFO) deposited on SrRuO 3-buffered Pt/TiO 2/SiO 2/Si(100) substrates by the soft chemical method. BLFO film was coherently grown at a temperature of 500 °C. The magnetoelectric coefficient measurement was performed to evidence magnetoelectric coupling behavior. Room temperature magnetic coercive field indicates that the film is magnetically soft. The maximum magnetoelectric coefficient in the longitudinal direction was close to 12 V/cmOe. Dielectric permittivity and dielectric loss demonstrated only slight dispersion with frequency due the less two-dimensional stress in the plane of the film. Polarization reversal was investigated by applying dc voltage through a conductive tip during the area scanning. We observed that various types of domain behavior such as 71 ° and 180° domain switching, and pinned domain formation occurred. Copyright © 2009 American Scientific Publishers All rights reserved.
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In the present communication, by using dielectric spectroscopy measurement, the correlations between Nanosized Barrier Layer Capacitance (NBLC) (Bueno et al. (2009) [7]) and the high frequency polaronic near-Debye dipolar relaxation found in CaCu3Ti4O12 compounds was discussed. The polaronic process was confirmed to be closely associated with the ultrahigh dielectric features of CaCu3Ti4O12 materials and its concomitant dielectric loss. Herein, the shift in relaxation frequency as a function of temperature was used for calculating the activation energy for hopping electronic conduction. The value obtained was 33 meV, an energy whose magnitude is compatible and confirmed the hypothesis of polaronic features for this high frequency dipolar relaxation process. Furthermore, it is shown that the nanosized barrier inferred from the NBLC model has a polaronic feature with dielectric permittivity exiting orthogonally to dielectric loss, a phenomenological pattern that contradicts the normally observed behavior for traditional dielectrics but explain the dielectric and conductivity feature of CaCu3Ti4O12 compounds. © 2010 Elsevier Ltd. All rights reserved.
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Calcium copper titanate, CaCu3Ti4O12, CCTO, thin films with polycrystalline nature have been deposited by RF sputtering on Pt/Ti/SiO2/Si (100) substrates at a room temperature followed by annealing at 600 °C for 2 h in a conventional furnace. The CCTO thin film present a cubic structure with lattice parameter a = 7.379 ±0.001 Å free of secondary phases. The observed electrical features of CCTO thin films are highly dependent on the [CaO12], [CaO 4], [CuO11], [CuO11Vx 0] and [TiO5.VO] clusters. The CCTO film capacitor showed a dielectric loss of 0.40 and a dielectric permittivity of 70 at 1 kHz. The J-V behavior is completely symmetrical, regardless of whether the conduction is limited by interfacial barriers or by bulk-like mechanisms. © 2013 Elsevier B.V. All rights reserved.
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Pós-graduação em Ciência e Tecnologia de Materiais - FC
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)
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Technology always advances and thus the device miniaturization and improved performance, besides multifunctionality, they become extremely necessary. A wave of research on the area tends to grow in number and importance in today's market, it is necessary to search for new materials, new applicability of the existing ones and new processes for increasingly cheaper costs. Dielectric materials are considered a key element in this sector being the main electrical properties its high dielectric constant and low dielectric loss. The Polymeric Precursor Method appears as a good alternative because is a low cost, simple process with controlled stoichiometry. In this method, two steps were performed. In a first step, the precursor solution was decomposed into powders and in a second step the precursor solution was converted in thin films. In this work, was used the polymeric precursor methods to get thin films where they were heat treated and characterized by XRD, SEM and AFM. We have obtained Bi3NbO7 thin films with good homogeneity and uniform distribution of grains were noted. We observed that the best condition to obtain the tetragonal phase is annealing the film at high temperatures for a longer soaking time and with excess of bismuth. Several oxides electrodes were evaluated aiming to obtain textured dielectric thin films
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)
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Pós-graduação em Ciência e Tecnologia de Materiais - FC
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Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)
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Es wurde eine homologe Reihe von Polyalkoholen mit der allgemeinen Summenformel CNHN+2(OH)N (N=3-6) hinsichtlich ihrer Glaseigenschaften ober- und unterhalb der Glasübergangstemperatur TG untersucht. Dabei kamen die dielektrische und magnetische Resonanzspektroskopie (NMR) zum Einsatz. Es ergab sich oberhalb TG eine systematische Zunahme aller untersuchten dynamischen Parameter wie Fragilität, Breite der angenommenen Korrelationszeitenverteilungen und der Sprungwinkel der primären Glasrelaxation mit zunehmendem N. Dies kann insgesamt als eine Abnahme des Netzwerkcharakters, der durch Wasserstoffbrückenbindungen bedingt ist, bei zunehmender Kettenlänge interpretiert werden. Unterhalb TG entwickelt sich mit zunehmendem N die Sekundärrelaxation von einem 'Wing Szenario' zu einem ausgeprägten Johari - Goldstein (JG) - Prozess. Ein Sprungmodell, welches eine eingeschränkte Reorientierung auf einem Konusrand beschreibt, erzeugt mit Hilfe der parametrisierten dielektrischen Verlustspektren Sprungwinkel, die mit denen aus aktuellen ²H - NMR spektroskopischen Untersuchungen vergleichbar sind. Durch den Vergleich unterschiedlich deuterierter Derivate von Glyzerin (N=3) und Sorbitol (N=6) wurde gefolgert, dass auch unterhalb TG der Netzwerkcharakter mit zunehmender Kettenlänge abnimmt.Aufgrund der hier durchgeführten Untersuchungen konnte eine Zeitskala für einen Johari - Goldstein - Prozess im Modellglasbildner Glyzerin extrapoliert werden. Eine Deutung des Wings als Hochfrequenzausläufer des JG - Prozesses ist dadurch möglich.Der JG - Prozess kann somit als universeller Glasprozess interpretiert werden, der in verschiedenen Glasbildnern in unterschiedlicher Ausprägung auftritt.