Respiration and the efficiency of energy during embryonic development of Asellus aquaticus L. (Crustacea) [Translation from: Vestsi Akademii Navuk Belorusskoi SSR, Seriya Biyal. 1978(5) 112-114, 1978]

Experimental studies were carried out on the transformation of matter and energy during embryonic development of the isopod Crustacea Asellus aquaticus L. under two constant temperatures. Material for the experiments was collected in the quarry lakes of the Kurasovshchin-zone (city-Minsk) at 9°C in April and at 18°C in June, 1977. The rate of consumption of oxygen per specimen by eggs and embryos of Asellus aquaticus was observed and dynamics of the basic biological characteristics during embryonic development studied.

Kinetics of dissociative water adsorption on stepped Si(001), on Si(115), Si(113), Si(5,5,12) and Si(112)

We present photoelectron spectroscopic and low energy electron diffraction measurements of water adsorption on flat Si samples of the orientations (001), (115), (113), (5,5,12) and (112) as well as on curved samples covering continuously the ranges (001)-(117) and (113)-(5,5,12)-(112). On all orientations, water adsorption is dissociative (OH and H) and non-destructive. On Si(001) the sticking coefficient S and the saturation coverage Theta(sat) are largest. On Si(001) and for small miscuts in the [110]-azimuth, S is constant nearly up to saturation which proves that the kinetics involves a weakly bound mobile precursor state. For (001)-vicinals with high miscut angles (9-13 degrees), the step structure breaks down, the precursor mobility is affected and the adsorption kinetics changed. On (115), (113), (5,5,12) and (112), the values of S and Theta(sat) are smaller which indicates that not all sites are able to dissociate and bind water. For (113) the shape of the adsorption curves Theta versus exposure shows the existence of two adsorption processes, one with mobile precursor kinetics and one with Langmuir-like kinetics. On (5,5,12), two processes with mobile precursor kinetics are observed which are ascribed to adsorption on different surface regions within the large surface unit cell. From the corresponding values of S and Theta(sat), data for structure models are deduced. (C) 1997 Elsevier Science B.V.

Electron diffraction and photoemission studies of clean and water-covered Si(5,5,12) and Si(112) surfaces

The structure of silicon surfaces in the orientation range (113)-(5,5,12)-(337)-(112) has been investigated using high resolution LEED and photoemission both on a spherical and on flat samples. We find that Si(5,5,12) [5.3 degrees from (113) and 0.7 degrees from (937)] is the only stable orientation between (113) and (111) and confirm the result of Baski et al. [Science 269, 1556 (1995)] that it has a 2 x 1 superstructure with a very large unit cell of 7.68 x 53.5 Angstrom(2). Adsorption measurements of water on Si(5,5,12) yield a mobile precursor kinetics with two kinds of regions saturating at 0.25 and 0.15 ML which are related to adsorption on different sites. Using these results, a modified structure model is proposed. Surfaces between (113) and (5,5,12) separate into facets of these two orientations; between (5,5,12) and (112), they separate into (5,5,12) and (111) facets. (337) facets in this range may be considered as defective (5,5,12) facets.

Si（112）高密勒指数面的理论研究

于2010-11-23批量导入

35MeV／u~(36)Ar+~(112,124)Sn反应中中等质量碎片关联函数的入射道依赖

测量了35MeV／u36Ar+112,124Sn反应中小角关联出射的中等质量碎片(IMF)约化速度关联函数．结果表明36Ar+124Sn反应系统中的约化速度关联函数在小约化速度处的反关联程度比36Ar+112Sn反应系统中的强,表现出明显的入射道依赖性．考察出射粒子对的单核子总动量时,发现这种差异主要来自于高动量粒子对的贡献．用三体弹道理论模型MENEKA分别计算了两个系统的IMF发射时标,在36Ar+112Sn反应系统中约为150fm／c,而在36Ar+124Sn反应系统中,约为120fm／c．同位旋相关的量子分子动力学计算表明,36Ar+124Sn系统中IMF的发射时间谱比36Ar+112Sn系统略有前移,相应地,其中心密度从最高点随时间的下降亦比36Ar+112Sn系统略快．

30MeV/u~(40)Ar+~(112,124)Sn反应中态布居核温度的同位旋效应

用 13单元望远镜探测器阵列测量了 30MeV u40 Ar +112 ,12 4Sn反应中小角关联粒子 ,由两体符合事件提取了α α关联函数 .用三体弹道理论模型MENEKA计算本底关联函数 ,用Monte Carlo方法计算探测效率函数 ,在扣除本底产额并考虑探测效率的修正后 ,对不同同位旋反应系统 40 Ar +112 Sn和 40 Ar+12 4Sn提取的相对态布居核温度分别是 4 .18±0 .2 50 .2 1MeV和 4 .10±0 .2 20 .2 0 MeV ;考察态布居核温度和粒子能量的关系时 ,观察到两个系统的发射温度均随着粒子能量的增加而降低 ,缺中子系统40 Ar +112 Sn中由低能时的 5 .13±0 .3 00 .2 6MeV降低到高能时的 3.87±0 .3 70 .2 9MeV ,丰中子系统 40 Ar +12 4Sn中由低能时的 5 .39±0 .3 00 .2 6MeV降低到高能时的 3.32±0 .2 80 .2 3 MeV .用激发热核衰变过程的同位旋选择性对这种同位旋相关性进行了解释

30MeV/u~(40)Ar+~(112,124)Sn反应中的同位素产额比与核温度

系统研究了 3 0MeV u40 Ar+ 1 1 2 ,1 2 4 Sn反应中的轻粒子同位素产额比随角度和初始激发能的变化关系 .对于两个反应体系 ,均观察到3He 4He和6Li 7Li的产额比随角度的增加而增加 ,6He 4He和8Li 7Li随角度的增加而减小 .统计发射的运动学效应不能完全符合实验结果 .各种单同位素产额比与靶核的N Z比有关 ,表现出同位旋效应 ,而由双同位素比提取的核温度几乎没有靶核相关性

30MeV/u~(40)Ar+~(112,124)Sn反应后角能谱温度的同位旋效应

在 30MeV/u4 0 Ar +112 ,12 4 Sn反应中用平行板雪崩计数器实现了前冲余核的测量 .在不同的线性动量转移下用运动源模型拟合了后角的3 He,α和6He能谱 ,发现3 He的能谱斜率温度在12 4 Sn系统中高于112 Sn系统 ,而6He的温度在112 Sn系统中更高 ,α粒子在两个系统中没有明显差别 .用热核粒子蒸发过程衰变道的选择性对这种同位旋相关性进行了解释 .GEMINI的计算不能重现实验结果