All-optical switching application of germano-silicate optical fiber incorporated with Ag nanocrystals

银纳米晶体掺杂的高非线性石英光纤的全光转换应用

The Influence of Age and Sex on the Cell Counts of Peripheral Blood Leukocyte Subpopulations in Chinese Rhesus Macaques

therapeutic drugs, vaccines and mechanisms of human diseases. Little is known about the normal levels of leukocyte subpopulations of Chinese rhesus macaques. To obtain these data, 100 blood samples from Chinese rhesus macaques were collected. The normal range of major leukocyte subpopulations, such as T lymphocytes, B lymphocytes, monocytes, myeloid dendritic cells (mDCs) and plasmacytoid dendritic cells (pDCs), were quantitatively analyzed by flow cytometry through BD trucount tubes. The influence of age and sex on the cell counts of leukocyte subpopulations was analyzed. The counts of CD3+ T cells, CD3+CD4+ T cells, CD3+CD8+ T cells and B cells decreased with age, but those of monocytes, mDCs and pDCs had no significant correlation with age. Significant differences existed in the cell counts of most leukocyte subpopulations between the male and female groups except pDCs. Furthermore the values of the females were higher than those of the males. The study provided basic information about the leukocyte subpopulations of Chinese rhesus macaques, and it may be valuable for immunobiological study of Chinese rhesus macaques. Cellular & Molecular Immunology. 2009;6(6):433-440.

Band crossing in isovalent semiconductor alloys with large size mismatch: First-principles calculations of the electronic structure of Bi and N incorporated GaAs

For large size- and chemical-mismatched isovalent semiconductor alloys, such as N and Bi substitution on As sites in GaAs, isovalent defect levels or defect bands are introduced. The evolution of the defect states as a function of the alloy concentration is usually described by the popular phenomenological band anticrossing (BAC) model. Using first-principles band-structure calculations we show that at the impurity limit the N-(Bi)-induced impurity level is above (below) the conduction- (valence-) band edge of GaAs. These trends reverse at high concentration, i.e., the conduction-band edge of GaAs1-xNx becomes an N-derived state and the valence-band edge of GaAs1-xBix becomes a Bi-derived state, as expected from their band characters. We show that this band crossing phenomenon cannot be described by the popular BAC model but can be naturally explained by a simple band broadening picture.

Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively.

The exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses

This paper studies the exciton-longitudinal-optical-phonon coupling in InGaN/GaN single quantum wells with various cap layer thicknesses by low temperature photoluminescence (PL) measurements With increasing cap layer thickness, the PL peak energy shifts to lower energy and the coupling strength between the exciton and longitudinal-optical (LO) phonon, described by Huang-Rhys factor, increases remarkably due to an enhancement of the internal electric field With increasing excitation intensity, the zero-phonon peak shows a blueshift and the Huang-Rhys factor decreases These results reveal that there is a large built-in electric field in the well layer and the exciton-LO phonon coupling is strongly affected by the thickness of the cap layer