V5+-doped Bi3.4Yb0.6Ti3O12 fatigue resistant ferroelectric thin films

In this paper, a serial of Bi3.4Yb0.6Ti3-xVxO12 (BYTV) thin film with different V5+ contents were deposited on Pt/Ti/SiO2/Si substrates by chemical solution deposition (CSD). The crystallized phase and electrical properties of the films were investigated using X-ray diffraction, polarization hysteresis loops, leakage current-voltage, and fatigue test. From our experimental results, it can be found that the ferroelectric properties can be improved greatly using V5+-doped in Bi3.4Yb0.6Ti3O12 (BYT) thin film, compared with the reported BYT thin film. The remanent polarization was enhanced and excellent leakage current characteristic with 10(-11)A at the bias voltage of 4V, which is much lower than the BYT thin film or some reported bismuth layer-structure ferroelectric films. Fatigue test shows that the fabricated films have good anti-fatigue characteristic after 10(10) switching cycles. (c) 2008 Published by Elsevier B.V.

Microstructure and NO2 sensing properties of Fe2O3 thin films

W-doped Fe2O3 films have been fabricated on polycrystalline alumina substrates by the RF magnetron sputtering method, and effects of annealing temperature on the NO2 sensing properties have been examined. The crystal structure of the obtained film changed from Fe3O4 to α-Fe2O3 after annealing at temperatures of 500 to 500°C in air. An increase in the annealing temperature increased the particle size, resulting in a decrease in the NO2-gas sensitivity. These results suggest that the NO2 sensitivity of W-doped Fe2O3 film depends on the particle size.

Effect of the nature of annealing solvent on the morphology of diblock copolymer blend thin films

The morphologies and structures for the thin film of blend systems consisting of two asymmetric polystyrene-block-polybutadiene (SB) diblock copolymers induced by annealing in the vapor of different solvents, namely, cyclohexane, benzene, and heptane, which have different selectivity or preferential affinity for a certain block, were investigated by tapping mode atomic force microscopy (AFM) and transmission electron microscopy (TEM). The results revealed that even a slight preferential affinity of good solvent for one block would strongly alter the morphology of the blend thin film.

Polymer Crystallization Influenced by Initial Orientation of Cylindrical Diblock Copolymers in Thin Films

The effect of the initial states (disordered perpendicular cylinder structure vs. parallel cylinder structure) on the crystallization of polystyrene-block-poly(ethylene oxide) (PS-b-PEO) thin films during cyclohexane annealing was investigated. The cylindrical domains perpendicular or parallel to the surface were obtained by controlling the film thickness. During solvent annealing, for the film with the perpendicular cylinders, the ordering degree of cylinders was increased.

Ring-shaped morphology in H-shaped block copolymer thin films

The formation of ring-shaped structures in an H-shaped block copolymer [a poly(ethylene glycol) backbone with polystyrene branches, i.e., (PS)(2)PEG(PS)(2)] thin film was investigated when it was annealed in saturated PEG-selective acetonitrile vapor. Our results clearly indicate that ring formation is determined by the initial morphology of the spin-coated film, the solvent vapor selectivity and the environmental temperature of the solvent-annealing process. Only the films with the initial core-shell cylindrical structure in strongly PEG-selective acetonitrile vapor could form the ring-shaped structures.

Single mode and multimodes lasing emission from MEH-PPV doped polystyrene thin films with surface ripples formed by vapour-induced phase separation

We report single mode and multimodes lasing emission from conjugated polymer poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylenevinylene] (MEH-PPV) doped polystyrene ( PS) thin films with surface ripples. Surface ripples were formed by water vapour-induced phase separation. A single mode lasing emission at 606 nm with a line-width of less than 0.4 nm was obtained. The laser threshold was as low as 3.5 mu J pulse(-1). The side mode suppression ratio was 5.76 dB. The periodic changes of the refraction index in the MEH-PPV : PS blending film due to the phase separation should be attributed to the lasing actions.

Weak epitaxy growth of organic semiconductor thin films

The fabrication of organic semiconductor thin films is extremely important in organic electronic devices. This tutorial review-which should particularly appeal to chemists and physicists interested in organic thin-film growth, organic electronic devices and organic semiconductor materials-summarizes the method of weak epitaxy growth (WEG) and its application in the fabrication of high quality organic semiconductor thin films.

Dendritic Superstructures and Structure Transitions of Asymmetric Poly(L-lactide-b-ethylene oxide) Diblock Copolymer Thin films

The evolution of morphologies of isothermally crystallized thin films with different thicknesses of poly(L-lactide-bethylene oxide) diblock copolymer was observed by optical microscopy (OM) and atomic force microscopy (AFM). Dendritic superstructures stacked with lamellae were investigated in thin films with similar to 200 nm to similar to 400 nm thickness. The lamellar structure was a lozenge- or truncated-lozenge-shaped single crystal of PLLA confirmed by AFM observations. The contour of the dendritic superstructures is hexagonal, and two types of sectors, [110] and [100], can be classified in terms of the chain-folding and crystal growth directions. These phenomena Are due to the interplay of the crystallization of the PLLA block, the microphase separation of the block copolymer, and the effect of the film thickness.

GIUSAXS and AFM Studies on Surface Reconstruction of Latex Thin Films during Thermal Treatment

The structural evolution of a single-layer latex film during annealing was studied via grazing incidence ultrasmall-angle X-ray scattering (GIUSAXS) and atomic force microscopy (AFM). The latex particles were composed of a low-T-g (-54 degrees C) core (n-butylacrylate, 30 wt %) and a high-T-g (41 degrees C) shell (t-butylacrylate, 70 wt %) and had an overall diameter of about 500 nm. GIUSAXS data indicate that the q(y) scan at q(z) = 0.27 nm(-1) (out-of-plane scan) contains information about both the structure factor and the form factor. The GIUSAXS data on latex films annealed at various temperatures ranging from room temperature to 140 degrees C indicate that the structure of the latex thin film beneath the surface changed significantly. The evolution of the out-of-plane scan plot reveals the surface reconstruction of the film. Furthermore, we also followed the time-dependent behavior of structural evolution when the latex film was annealed at a relatively low temperature (60 degrees C) where restructuring within the film can be followed that cannot be detected by AFM, which detects only surface morphology.

Microphase-Separated Brushes on Square Platelets in PS-b-PEO Thin Films

In polystyrene-block-poly(ethylene oxide) thin square platelets can be obtained via fast solvent evaporation by controlling the tethering density (0.08 < sigma < 0.11). The tethering density of the brushes is proportional to the thickness of the PEO crystal and increases with increasing initial solution heating temperature (T-i). When T-i < T-m, where T-m is the melting point of PEO, brushes with microphase-separated structures are observed. The formation of microphase-separated brushes depends on two factors: the strong incompatibility between PS and noncrystalline PEO chains (attached to the crystalline PEO) and the weak interaction between PS-PS brushes.

Formation of Two Kinds of Hexagonally Arranged Structures in ABC Triblock Copolymer Thin Films Induced by a Strongly Selective Solvent Vapor

An order-order transition (OOT) in the sequence of a hexagonally arranged core-shell cylinder to a double-hexagonally arranged dot in polystyrene-block-poly(butadiene)-block-poly(2-vinylpyridine) (SBV) triblock copolymer thin films is reported to be induced upon exposure to a solvent vapor that: is strongly selective for the two end blocks. These two kinds of hexagonally arranged structures could form when the film thickness is 44, 3.23, and 223 nm. When the film thickness is decreased to 13 nm, the ordered structure is absent. The sizes of the cylinder structures formed with the same annealing time in films of different thickness are compared to address the effects of film thickness on the phase structure. The mechanism is analyzed from the total surface area of the blocks and the effective interaction parameter in the solvent vapor.

Lamella reorientation in thin films of a symmetric poly(L-lactic acid)-block-polystyrene upon crystallization at different temperatures

The thin films of a symmetric crystalline-coil diblock copolymer of poly(L-lactic acid) and polystyrene (PLLA-b-PS) formed lamellae parallel to the substrate surface in melt. When annealed at temperatures well above the glass transition temperature of PLLA block (T-g(PLLA)), the PLLA chains started to crystallize, leading to reorientation of lamellae. Such reorientation behavior exhibited dependence on the correlation between the crystallization temperature (T-c), the glass transition temperature of PS (T-g(PS)), the peak melting point of PLLA crystals (T-m(PLLA)), and the end melting point of PLLA crystals (T-m,end(PLLA)). When annealed at (T-c =) 80 degrees C (T-c < T-g(PS) < T-ODT, order-disorder transition temperature), 123 degrees C (T-g(PS) < T-c < T-m(PLLA) < T-ODT). 165 degrees C (T-g(PS) < T-m(PLLA) < T-c < T-m,end(PLLA) < T-ODT), the parallel lamellae became perpendicular to the substrate surface, exclusively starting at the edge of surface relief patterns. Meanwhile, the corresponding lamellar spacing was significantly enhanced.