Investigations on PVP/Y3BO6:Eu3+, a red Luminescent composite for lighting devices based on near UV-LEDs

This work deals with a red phosphor. Y3BO6:Eu3+, and its corresponding poly(N-vinylpyrrolidone) (PVP)/Y3BO6:Eu3+ luminescent composite film suitable for applications in the next generation of Hg-free lamps based on near ultraviolet (UV) light emitting diodes (LEDs). Well crystallized samples of Y3BO6 powders with the Eu3+ content up to 20 mol% were prepared by the Pechini method. After structural, morphological and optical characterization, the best doping rate of Eu3+ in the matrix was determined to be 15 mol%. This optimal powder, which is highly friable, was easily ground into fine particles and homogeneously dispersed into a PVP polymer solution to give rise to a polymer phosphor composite. Structural and optical features of the composite film have been studied and compared to those of a pristine PVP film and Y3BO6:Eu3+ powder. All the characterization (XRD, SAXS, luminescence...) proved that the red phosphor particles are well incorporated into the polymer composite film which exhibited the characteristic red emission of Eu3+ under UV light excitation. Furthermore, photostability of the polymer/phosphor composite film under UV-LED irradiation was evaluated from exposure to accelerated artificial photoageing at wavelengths above 300 nm.

Magnetism in spin models for depleted honeycomb-lattice iridates: Spin-glass order towards percolation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Estudo, construção e caracterização de diodos orgânicos tipo Schttky

During the twentieth century the inorganic electronics was largely developed being present in various industrial equipment or household use. However, at the end of that century were verified electronic properties in organic compounds, giving rise to the field of organic electronics. Since then, the physical properties of elementary devices such as diodes and organic transistors have been studied. In this work was studied the properties of diode devices fabricated with a semiconductor polymer, the poly-o-methoxyaniline (POMA). Devices containing electrodes of Au and Al were fabricated with semiconductor polymer of different doping levels. We found that the rectifying behavior for the heterojunctions metal/polimer are reached only for high doping level (with conductivity greater than 1,77. 10-9 S / cm), which gives the devices characteristic of a Schottky diode. The rectifying behavior was observed for electric fields of low magnitude, below the operating field (~ 600 V/cm), while for electric field greater than 600 V/cm the a linear behavior I vs.V was obtained. We determined that this Ohmic behavior arises from the charge transport over the volume of the semiconductor material after the lowering of the metal/semiconductor barrier. In devices with weakly doped semiconductor, the electrical resistance of the volume becomes high and the process of charge transportation is dominated by the volume, for any intensity of the applied electric field

Síntese por reação em estado sólido de pós cerâmicos multifuncionais à base de CaCu3Ti4O12 modificados com estrôncio

The study of ceramic materials is constantly evolving, especially in research related to advanced ceramics. Once these have many applications, this paper relates to synthesis by solid state reaction of calcium copper titanate (CCTO) ceramic material means doping with strontium. The powders were characterized using thermal analysis techniques such as TG (thermogravimetry), DTA (differencial thermal analysis), dilatometry, X-ray diffraction (XRD) and scanning electron microscopy (SEM). The compositions have submitted weight loss at around 6% with respect to carbonates used, and was attributed a temperature of 950° C to perform the calcination according to thermogravimetric analysis. After the process of calcination and milling, the particles presented approximately spherical shapes and high percentages of substitution Ca2+ with Sr2+ was evident by the presence of necks between to particles due to the milling calcination. Analyses with Energy Dispersive Spectroscopy (EDS) showed stoichiometries in different samples very similar to the theoretical stoichiometry

Efeito do recobrimento de filmes de carbono tipo diamante depositados a plasma na manutenção do torque de parafusos protéticos

Pós-graduação em Odontologia Restauradora - ICT

Diodo planar orgânico Schottky: construção e caracterização

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Formação e crescimento do óxido de zinco e óxido de zinco dopado com cobre

Pós-graduação em Química - IQ

Efeitos do tratamento térmico na obtenção da fase 2223 em amostras de BSCCO com e sem substituição

Pós-graduação em Ciência dos Materiais - FEIS

Temperature-induced spontaneous time-reversal symmetry breaking on the honeycomb lattice

Phase transitions involving spontaneous time-reversal symmetry breaking are studied on the honeycomb lattice at finite hole doping with next-nearest-neighbor repulsion. We derive an exact expression for the mean-field equation of state in closed form, valid at temperatures much less than the Fermi energy. Contrary to standard expectations, we find that thermally induced intraband particle-hole excitations can create and stabilize a uniform metallic phase with broken time-reversal symmetry as the temperature is raised in a region where the ground state is a trivial metal.

Fingerprints of short-range and long-range structure in BaZr1-xHfxO3 solid solutions: an experimental and theoretical study

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Structural properties of cerium doped siloxane-PMMA hybrid coatings with high anticorrosive performance

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Theoretical study of the stoichiometric and reduced Ce-Doped TiO2 anatase (001) surfaces

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Thermal inkjet printing of copper tetrasulfonated phthalocyanine (CuTsPc) as a semiconducting layer on flexible MIS capacitors

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Morphological and electrical evolution of ZnO:Al thin films deposited by rf magnetron sputtering onto glass substrates

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Subband mixing inducing negative resistance

A new double channel field-effect structure based on delta-doping technology is proposed Resonant tunneling between the channels is employed to control the transport along the interface plane. A realistic simulation is performed for several temperatures. We solve the Schrodinger and Poisson equations self-consistently and have found that a large peak-to-valley ratio in the current-voltage characteristic occurs at the whole range of temperature investigated this effect indicates the potential application of this phenomenon for switching devices, where the transversal conductivity can be controlled due to the coupling between states belonging to different channels.