Analysis of orthogonal memory patterns

It is well known that the storage capacity may be large if all memory patterns are orthogonal to each other. In this paper, a clear description is given about the relation between the dimension N and the maximal number of orthogonal vectors with components +/-1, and also the conception of attractive index is proposed to estimate the basin of attraction. Theoretic analysis and computer simulation show that each memory pattern's basin of attraction contains at least one Hamming ball when the storage capacity is less than 0.33N which is better than usual 0.15 N.

Retrieval of Electron Return Time from High-order Harmonics Generated in a Mixture of He and Ne Gases

In terms of single-atom induced dipole moment by Lewenstein model, we present the macroscopic high-order harmonic generation from mixed He and Ne gases with different mixture ratios by solving three-dimensional Maxwell's equation of harmonic field. And then we show the validity of mixture formulation by Wagner et al. [Phys. Rev. A 76 (2007) 061403(R)] in macroscopic response level. Finally, using least squares fitting we retrieve the electron return time of short trajectory by formulation in Kanai et al. [Phys. Rev. Lett. 98 (2007) 153904] when the gas jet is put after the laser focus.

accurate and self-consistent ocean color algorithm:simultaneous retrieval of aerosol optical properties and chlorphyll concentrations

A new algorithm has been developed for simultaneous retrieval of aerosol optical properties and chlorophyll concentrations in case I waters. This algorithm is based on an improved complete model for the inherent optical properties and accurate simulations of the radiative transfer process in the coupled atmosphere-ocean system. It has been tested against synthetic radiances generated for the Sea-Viewing Wide Field-of-View Sensor (SeaWiFS) channels and has been shown to be robust and accurate. A unique feature of this algorithm is that it uses the measured radiances in both near-IR and visible channels to find that combination of chlorophyll concentration and aerosol optical properties that minimizes the error across the spectrum. Thus the error in the retrieved quantities can be quantified.

An integrated aurora image retrieval system: AuroraEye

With the digital all-sky imager (ASI) emergence in aurora research, millions of images are captured annually. However, only a fraction of which can be actually used. To address the problem incurred by low efficient manual processing, an integrated image analysis and retrieval system is developed. For precisely representing aurora image, macroscopic and microscopic features are combined to describe aurora texture. To reduce the feature dimensionality of the huge dataset, a modified local binary pattern (LBP) called ALBP is proposed to depict the microscopic texture, and scale-invariant Gabor and orientation-invariant Gabor are employed to extract the macroscopic texture. A physical property of aurora is inducted as region features to bridge the gap between the low-level visual features and high-level semantic description. The experiments results demonstrate that the ALBP method achieves high classification rate and low computational complexity. The retrieval simulation results show that the developed retrieval system is efficient for huge dataset. (c) 2010 Elsevier Inc. All rights reserved.

Realization of write-once-read-many-times memory devices based on poly(N-vinylcarbazole) by thermally annealing

A nonvolatile write-once-read-many-time (WORM-time) memory device based on poly(N-vinylcarbazole) (PVK) films was realized by thermally annealing. The device can be fabricated using a simple spin coat method. It was found that the control of PVK film surface morphology by thermally annealing plays an important role in achieving the WORM memory properties. The memory device showed an ON/OFF current ratio as high as 10(4) and the retention time was over 2000 s without degradation.

The morphology control of pentacene for write-once-read-many-times memory devices

We realized write-once-read-many-times (WORM) memory devices based on pentacene and demonstrated that the morphology control of the vacuum deposited pentacene thin film is greatly important for achieving the unique nonvolatile memory properties. The resulted memory devices show a high ON/OFF current ratio (10(4)), long retention time (over 12 h), and good storage stability (over 240 h). The reduction of the barrier height caused by a large interface dipole and the damage of the interface dipole under a critical bias voltage have been used to explain the transition processes.

Origin of negative differential resistance and memory characteristics in organic devices based on tris(8-hydroxyquinoline) aluminum

Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

Organic Thin-Film Transistor Memory With Nanoparticle Floating Gate

Organic thin-film transistor memory devices were realized by inserting a layer of nanoparticles (such as Ag or CaF2) between two Nylon 6 gate dielectrics as the floating gate. The transistor memories were fabricated on glass substrates by full thermal deposition. The transistors exhibit significant hysteresis behavior in current-voltage characteristics, due to the separated Ag or CaF2 nanoparticle islands that act as charge trap centers. The mechanism of the transistor memory operation was discussed.

Write-Once Read-Many-Times Memory Based on a Single Layer of Pentacene

We realized an organic electrical memory device with a simple structure based on single-layer pentacene film embedded between Al and ITO electrodes. The optimization of the thickness and deposition rate of pentacene resulted in a reliable device with an on/off current ratio as high as nearly 10(6), which was two orders of magnitude higher than previous results, and the storage time was more than 576 h. The current transition process is attributed to the formation and damage of the Interface dipole at different electric fields, in which the current conduction showed a transition from ohmic conductive current to Fowler-Nordheim tunneling current. After the transition from ON- to OFF-state, the device tended to remain in the OFF-State even when the applied voltage was removed, which indicated that the device was very promising for write-once read-many-times memory.