Preparation and properties of ferroelectric Pb1-xCaxTiO3 thin films produced by the polymeric precursor method

Pb1- xCaxTiO3 thin films with x = 0.24 composition were prepared by the polymeric precursor method on Pt/Ti/SiO2/Si substrates. The surface morphology and crystal structure, and the ferroelectric and dielectric properties of the films were investigated. X-ray diffraction patterns of the films revealed their polycrystalline nature. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness. The multilayer Pb1-xCaxTO3 thin films were granular in structure with a grain size of approximately 60-70 nm. The dielectric constant and dissipation factor were, respectively, 174 and 0.04 at a 1 kHz frequency. The 600-nm thick film showed a current density leakage in the order of 10(-7) A/cm(2) in an electric field of about 51 kV/cm. The C-V characteristics of perovskite thin films showed normal ferroelectric behavior. The remanent polarization and coercive field for the deposited films were 15 muC/cm(2) and 150 kV/cm, respectively. (C) 2001 Kluwer Academic Publishers.

Structural and electrical properties of SrBi2Nb2O9 thin films prepared by chemical aqueous solution at low temperature

SrBi2Nb2O9 (SBN) thin films were prepared by the polymeric precursors method and deposited by dip coating onto Pt/Ti/SiO2/Si(100) substrates. The dip-coated films were specular and crack-free and crystallized during firing at 700 degrees C. Microstructure and morphological evaluation were followed by grazing incident X-ray diffraction (GIXRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The films exhibited somewhat porous grain structure with rounded grains of about 100 nm. For the electrical measurements, gold electrodes of 300 mu m in diameter were sputter deposited on the top surface, forming a metal-ferroelectric-metal (MFM) configuration. The remanent polarization (P-r) and coercive field (E-c) were 5.6 mu C/cm(2) and 100 kV/cm, respectively. (C) 1999 Elsevier B.V. B.V. All rights reserved.

The influence of crystallization route on the properties of lanthanum-doped Bi4Ti3O12 thin films prepared from polymeric precursors

Pure and lanthanum-doped Bi4Ti3O12 thin films were deposited on Pt/Ti/SiO2/Si substrate using a polymeric precursor solution. The spin-coated films were specular and crack-free and crystalline after annealing at 700 degreesC for 2 h. Crystallinity and morphological evaluation were examined by X-ray diffraction (XRD), scanning electron microscopy (SEM), and atomic force microscopy (AFM). Multilayered films obtained using the intermediate-crystalline layer route present a dense microstructure with spherical grains. Films obtained using the intermediate-amorphous layer, present elongated grains around 250 nm in size. The dielectric and ferroelectric properties of the lanthanum-doped Bi4Ti3O12 films are strongly affected by the crystallization route. The hysteresis loops are fully saturated with a remnant polarization and drive voltage of the films, heat-treated by the intermediate-crystalline (P-r = 20.2 muC/cm(2) and V = 1.35 V) and for the film heat-treated by amorphous route (P-r = 22.4 muC/cm(2) and V = 2.99 V). (C) 2004 Elsevier B.V. All rights reserved.

Influence of the solution pH on the morphological, structural and electrical properties of Bi3.50La0.50Ti3O12 thin films obtained by the polymeric precursor method

Lanthanum-doped Bi4Ti3O12 thin films (BLT) were deposited on Pt/Ti/SiO2/Si substrates using a polymeric precursor solution. The spin-coated films were specular, crack-free and crystalline after annealing at 700 degrees C for 2 h. Crystallinity and morphological evaluation were examined by X ray diffraction (YRD) and atomic force microscopy (AFM). The stability of the formed complex is of extreme importance for the formation of the perovskite phase. Films obtained from acid pH solution present elongated grains around 200 ran in size, whereas films obtained from basic solution present a dense microstructure with spherical grains (100 nm). The dielectric and ferroelectric properties of the BLT films are strongly affected by the solution pH. The hysteresis loops are fully saturated with a remnant polarization and coercive voltage of P-r=20.2 mu C/cm(2) and V-c = 1.35 V and P-r= 15 mu C/cm(2) and V-c = 1.69 V for the films obtained from basic and acid solutions, respectively. (C) 2005 Elsevier B.V. All rights reserved.

Coating residual stress effects on fatigue performance of 7050-T7451 aluminum alloy

The tendency of the aircraft industry is to enhance customer value by improving performance and reducing environmental impact. In view of availability, aluminum alloys have a historically tendency to faster insertion due to their lower manufacturing and operated production infrastructure. In landing gear components, wear and corrosion control of many components is accomplished by surface treatments of chrome electroplating on steel or anodizing of aluminum. One of the most interesting environmentally safer and cleaner alternatives for the replacement of hard chrome plating or anodizing is tungsten carbide thermal spray coating, applied by the high velocity oxy fuel (HVOF) process. However, it was observed that residual stresses originating from these coatings reduce the fatigue strength of a component.An effective process as shot peening treatment, considered to improve the fatigue strength, pushes the crack sources beneath the surface in most of medium and high cycle cases, due to the compressive residual stress field induced. The objective of this research is to evaluate a tungsten carbide cobalt (WC-Co) coating applied by the high velocity oxy fuel (HVOF) process, used to replace anodizing. Anodic films were grown on 7050-T7451 aluminum alloy by sulfuric acid anodizing, chromic acid anodizing and hard anodizing. The influence on axial fatigue strength of anodic films grown on the aluminum alloy surface is to degrade the stress-life performance of the base material. Three groups of specimens were prepared and tested in axial fatigue to obtain S-N curves: base material, base material coated by HVOF and base material shot peened and coated.Experimental results revealed increase in the fatigue strength of Al 7050-T7451 alloy associated with the WC 17% Co coating. on the other hand, a reduction in fatigue life occurred in the shot peened and coated condition. Scanning electron microscopy technique and optical microscopy were used to observe crack origin sites, thickness and coating/substrate adhesion. (c) 2007 Elsevier B.V. All rights reserved.

Cracks developed during SrTiO3 thin-film preparation from polymeric precursors

Strontium titanate (SrTiO3) thin films were prepared by dip-coating Si(111) single-crystal substrates in citrate solutions of ethylene glycol, considering several citric acid/ethylene glycol (CA/EG) ratios. Measurements of intrinsic viscosity indicate that increasing the amount of EG increases the precursors' polymeric chains and increases the weight loss. After deposition the substrates were dried on a hotplate (approximate to 150 degrees C); this was followed by heat treatment at temperatures ranging from 500 to 700 degrees C using heating and cooling rates of 1 degrees C min(-1). SEM and optical microscopy investigations of the sintered films obtained from different CA/EG ratios indicate that there is a critical thickness above which the films present cracks. This critical thickness for SrTiO3 films deposited on the Si(111) substrate is about 150 nm, Measurements of crack spacing as a function of film thickness indicate that the origin of cracks cannot be explained by the elastic behavior of the film but rather by the viscoelastic relaxation of the film during pyrolysis and sintering. Copyright (C) 1999 John Wiley & Sons, Ltd.

High dielectric constant of SrTiO3 thin films prepared by chemical process

SrTiO3 thin films were prepared by the polymeric precursor method and deposited by spin-coating onto Pt/Ti/SiO2/Si(100) substrates. The spin-coated films heat treated at 700 degrees C were crack-free, dense, and homogeneous. Microstructural and morphological evaluations were followed by grazing incident X-ray, scanning electron microscopy and atomic force microscopy. Dielectric studies indicated a dielectric constant of about 475, which is higher than that of ceramic SrTiO3, and a factor dissipation of about 0.050 at 100 kHz. SrTiO3 thin films were found to have paraelectric properties with C-V characteristics. (C) 2000 Kluwer Academic Publishers.

Multi-layered LiNbO3 films prepared by a polymeric precursor method

The polymeric precursor method was used to prepare multi-layered LiNbO3 films. The overall process consists of preparing a coating solution from the Pechini process and the deposited film is subsequently heat-treated. Two-layered films were prepared by this process, onto (0001) sapphire substrates. Two different routes were investigated for the heat-treatment. The amorphous route consisted of performing, after each deposition, a pre-treatment at low temperature to eliminate the organic material. In this case, the crystallization heat-treatment was performed only after the two layers had been deposited. on the other hand, a process layer-after-layer crystallization was used. Both routes led to (0001) LiNbO3 oriented films. However, only the film prepared by the layer-after-layer crystallization presented an epitaxial growth and a crack-free morphology. Moreover, the layer-after-layer crystallization process led to a film exhibiting the best optical properties. (C) 2001 Elsevier B.V. Ltd. All rights reserved.

Microstructural and ferroelectric properties of PbZr1-xTi(x)O(3) thin films prepared by the polymeric precursor method

The polymeric precursor method was employed in the preparation of PZT thin films on Pt(111)Ti/SiO2/Si(100) substrates. X-ray diffraction patterns revealed the polycrystalline nature of the PZT (53:47) thin films, which had a granular structure and a grain size of approximately 70 nm. A 350-nm thick film was obtained by running three cycles of the dip-coating/heating process. Atomic force microscopy (AFM) analyses showed the surface of these thin films to be smooth, dense and crack-free with low surface roughness (= 2.0 nm). The PZT (53:47) thin films annealed at 700 degreesC showed a well-saturated hysteresis loop. The C-V curves of perovskite thin film displayed normal ferroelectric behavior, while the remanent polarization (2P(r)) and coercive field (E-e) of the film deposited and measured at room temperature were 40 muC/cm(2) and 110 kV/cm, respectively. (C) 2001 Elsevier B.V. B.V. All rights reserved.

A probabilistic model for elastic-plastic fracture analysis of plane and axisymmetric structures

This work presents a methodology for elastic-plastic fracture reliability analysis of plane and axisymmetric structures. The structural reliability analysis is accomplished by means of the FORM analytical method. The virtual crack extension technique based on a direct minimization of potencial energy is utililized for the calculation of the energy release rate. Results are presented to illustrate the performance of the adopted methodology.

An implicit BEM formulation to model strong discontinuities in solids

A boundary element method (BEM) formulation to predict the behavior of solids exhibiting displacement (strong) discontinuity is presented. In this formulation, the effects of the displacement jump of a discontinuity interface embedded in an internal cell are reproduced by an equivalent strain field over the cell. To compute the stresses, this equivalent strain field is assumed as the inelastic part of the total strain. As a consequence, the non-linear BEM integral equations that result from the proposed approach are similar to those of the implicit BEM based on initial strains. Since discontinuity interfaces can be introduced inside the cell independently on the cell boundaries, the proposed BEM formulation, combined with a tracking scheme to trace the discontinuity path during the analysis, allows for arbitrary discontinuity propagation using a fixed mesh. A simple technique to track the crack path is outlined. This technique is based on the construction of a polygonal line formed by segments inside the cells, in which the assumed failure criterion is reached. Two experimental concrete fracture tests were analyzed to assess the performance of the proposed formulation.

Preparation of ceramic membranes from surface modified tin oxide nanoparticles

The preparation of crack-free SnO2 supported membranes requires the development of new strategies of synthesis capable to allow controlled changes of surface chemistry and to improve the processability of supported layers. In this way, the controlled modification of the SnO2 nanoparticle surface by adding capping molecules like Tiron(R) ((OH)(2)C6H2(SO3Na)(2)) during the sol-gel process was studied, aiming to obtain high performance membranes. Colloidal suspensions were prepared by hydrolyzing SnCl4.5H(2)O aqueous solution with NH4OH in presence of Tiron(R). The effect of the amount of Tiro(R) (from I to 20 wt.%) on the structural features of nanoparticles, powder redispersability and particle-solution interface properties was investigated by X-ray powder diffraction (XRPD), extended X-ray absorption fine structure (EXAFS), quasi-elastic light scattering and electrophoretic mobility measurements. XRPD and EXAFS results showed that the addition of Tiron(R) up to 20 wt.% to colloidal suspensions does not affect the crystallite size of SnO2 primary particles, determined around 2-3 nm. This value is comparable to the hydrodynamic size measured after redispersion of powder prepared with amount of Tiro(R) higher than 7.5 wt.%, indicating the absence of condensation reactions between primary particles after the initial precipitation step. As a consequence the powder with amount of Tiron(R) > 7.5 wt.%, can be fully redispersed in aqueous solution at pH greater than or equal to I I until a nanoparticle concentration of 6 vol.%. The electrophoresis measurements showed a decrease of the isoelectric point by increasing the amount of grafted Tiron(R) at the SnO2 nanoparticle surface, resulting in negatively charged particle-solution interface in all the studied pH range (2-11). These features govern the gelation process favoring the preparation of crack-free SnO2 supported membranes. The control exercised by Tiron(R) modifying agent in the aggregation process allows the fine-tuning of the porosity, from 0.124 to 0.065 cm(3) g(-1), and mean pore size, from 6.4 to 1.9 nm, as the amount of grafted molecules increases from 0 to 10 wt.%. In consequence, the membrane cut-off determined by filtration of polyethylene glycol standard solutions can be screened from 1500 to 3500 g mol(-1). (C) 2002 Elsevier B.V. B.V. All rights reserved.

Low temperature crystallization of SrBi2Ta2O9 thin films using microwave oven

SrBi2Ta2O9 thin films, produced by the polymeric precursor method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films thus obtained are crack-free, well-adhered, and fully crystallized, even when treated at 600 degreesC for 10 min. The microstructure displayed a polycrystalline nature with an elongate grain size comparable to the films obtained by the conventional treatment. The dielectric constant values are 240, 159 and 67, for the films treated at 600 degreesC, 650 degreesC and 700 degreesC, respectively, when the films are placed directly on the SiC susceptor. Electrical measurements revealed that the increase of the temperature treatment to 700 degreesC causes a complete loss of ferroelectricity due to degradation of the bottom interface. A 4 nun-ceramic wool put between the susceptor and the substrate minimizes the interface degradation leading to a dielectric constant, a dielectric loss, and a remnant polarization (2P(r)) of 181 muC/cm(2), 0.032 muC/cm(2), and 12.8 muC/cm(2), respectively, for a film treated at 750 degreesC for 20 min. (C) 2004 Elsevier B.V. All rights reserved.

Improvement of the ferroelectric properties of ABO(3) (A= Pb, Ca, Ba; B=Ti, Zr) films

High-quality ABO(3)/LaNiO3 (A = Ph, Ca, Ba; B = Ti, Zr) hetero structures have been grown on LaAlO3 (1 0 0) substrate by the chemical solution deposition method and crystallized by a microwave oven technique. The structural, morphological and electric properties were characterized by means of X-ray diffraction (XRD), atomic force microscope (AFM), and dielectric and ferroelectric measurements. XRD patterns revealed single-phase polycrystalline and oriented thin films whose feature depends on the composition of the films. The AFM surface morphologies showed a smooth and crack-free surface with the average grain size ranging from 116 to 300 nm for both LaNiO3 electrode and the ferroelectric films. Dielectric measurements on these samples revealed dielectric constants as high as 1800 at frequency of 100 KHz. Such results showed that the combination of the chemical solution method with the microwave process provides a promising technique to grow high-quality thin films with good dielectric and ferroelectric properties. (c) 2005 Elsevier Ltd. All rights reserved.

Barium strontium titanate nanocrystalline thin films prepared by soft chemical method

Barium strontium titanate (Ba0.65Sr0.35TiO3) nanocrystalline thin films, which were produced by the soft chemical method, were crystallized at low temperature using a domestic microwave oven. A SiC susceptor were used to absorb the microwave energy and rapidly transfer the heat to the film. Low microwave power and short time have been used. The films obtained are crack-free, well-adhered, and fully crystallized. The microstructure displayed a polycrystalline nature with nanograin size. The metal-BST-metal structure of the thin films treated at 700 degrees C show food electric properties. The ferroelectric nature of the BST35 thin film was indicated by buttertly- shaped C-V curves. The capacitance-frequency curves reveal that the dielectric constant may reach a value up to 800 at 100kHz. The dissipation factor was 0.01 at 100kHz. The charge storage density as function of applied voltage graph showed that the charge storage densities are suitable for use in trench type 64 Mb ( 1-5 mu C/cm(2) and 265 Mb (2-11 mu C/cm(2)) DRAMs. (C) 2007 Elsevier Ltd. All rights reserved.