Estudo do desempenho de resinas poliméricas para remoção de H2S do gás natural

The natural gas (NG) is a clean energy source and found in the underground of porous rocks, associated or not to oil. Its basic composition includes methane, ethane, propane and other components, like carbon dioxide, nitrogen, hydrogen sulphide and water. H2S is one of the natural pollutants of the natural gas. It is considered critical concerning corrosion. Its presence depends on origin, as well as of the process used in the gas treatment. It can cause problems in the tubing materials and final applications of the NG. The Agência Nacional do Petróleo sets out that the maximum concentration of H2S in the natural gas, originally national or imported, commercialized in Brazil must contain 10 -15 mg/cm3. In the Processing Units of Natural Gas, there are used different methods in the removal of H2S, for instance, adsorption towers filled with activated coal, zeolites and sulfatreat (solid, dry, granular and based on iron oxide). In this work, ion exchange resins were used as adsorbing materials. The resins were characterized by thermo gravimetric analysis, infrared spectroscopy and sweeping electronic microscopy. The adsorption tests were performed in a system linked to a gas-powered chromatograph. The present H2S in the exit of this system was monitored by a photometrical detector of pulsing flame. The electronic microscopy analyzes showed that the topography and morphology of the resins favor the adsorption process. Some characteristics were found such as, macro behavior, particles of variable sizes, spherical geometries, without the visualization of any pores in the surface. The infrared specters presented the main frequencies of vibration associated to the functional group of the amines and polymeric matrixes. When the resins are compared with sulfatreat, under the same experimental conditions, they showed a similar performance in retention times and adsorption capacities, making them competitive ones for the desulphurization process of the natural gas

Propriedades magnéticas e magnetorresistência em filmes finos de Ni81Fe19

The ferromagnetic materials play an important role in the development of various electronic devices and, have great importance insofar as they may determine the efficiency, cost and, size of the devices. For this reason, many scientific researches is currently focused on the study of materials at ever smaller scales, in order to understand and better control the properties of nanoscale systems, i.e. with dimensions of the order of nanometers, such as thin film ferromagnetic. In this work, we analyze the structural and magnetic properties and magnetoresistance effect in Permalloy-ferromagnetic thin films produced by magnetron sputtering. In this case, since the magnetoresistance effect dependent interfaces of thin films, this work is devoted to the study of the magnetoresistance in samples of Permalloy in nominal settings of: Ta[4nm]/Py[16nm]/Ta[4nm], Ta[4nm]/Py[16nm]/O2/Ta[4nm], Ta[4nm]/O2/Py[16nm]/Ta[4nm], Ta[4nm]/O2/Py[16n m]/O2/Ta[4nm], as made and subjected to heat treatment at temperatures of 160ºC, 360ºC e 460ºC, in order to verify the influence of the insertion of the oxygen in the layer structure of samples and thermal treatments carried out after production of the samples. Results are interpreted in terms of the structure of the samples, residual stresses stored during deposition, stresses induced by heat treatments and magnetic anisotropies

Structure and ferro/piezoelectric properties of SrBi(4)Ti(4)O(15) films deposited on TiO(2) buffer layer

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photocatalyst TiO2-Co: the effect of doping depth profile on methylene blue degradation

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Photoelectrocatalytic Removal of Bromate Using Ti/TiO2 Coated as a Photocathode

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

The photoelectrocatalytic oxidative treatment of textile wastewater containing disperse dyes

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Comparison of oxidation efficiency of disperse dyes by chemical and photoelectrocatalytic chlorination and removal of mutagenic activity

Degradation of Disperse Orange 1, Disperse Red 1 and Disperse Red 13 dyes has been performed using electrochemical oxidation on Pt electrode, chemical chlorination and photoelectrochemical oxidation on Ti/TiO(2) thin film electrodes in NaCl or Na(2)SO(4) medium. 100% discoloration was obtained for all tested methods after 1 h of treatment. Faster color removal was obtained by photoelectrocatalytic oxidation in 0.1 mol L(-1) NaCl pH 4.0 under UV light and an applied potential of +1.0V (vs SCE reference electrode), which indicates also values around 60% of TOC removal. The conventional chlorination method and electrochemical oxidation on Pt electrode resulted in negligible reduction of TOC removal. All dyes showed positive mutagenic activity in the Salmonella/microsome assay with the strain TA98 in the absence and presence of S9 (exogenous metabolic activation). Nevertheless, there is complete reduction of the mutagenic activity after 1 h of photoelectrocatalytic oxidation, suggesting that this process would be good option to remove disperse azo dyes from aqueous media. (C) 2008 Elsevier Ltd. All rights reserved.

Filmes de titânio-silício preparados por spin e dip-coating

The conditions for the preparation of luminescent materials, consisting of Eu3+ ions entrapped in a titanium matrix, in the forma of a thin film, using the sol-gel process, are described. The films were obtained from sols prepared with TEOS and TEOT, in the presence of acetylacetone as the hidrolysis-retarding agent, using the dip-coating and spin-coating techniques. The influence of these techniques on the films based on titanium and silicon are presented. The Eu3+ was used as a luminescent probe. The films have been characterized by luminescence, reflection and transmittance. The thickness of the films could be related to the preparation procedure. Transparent thin films have been prepared by dip-coating technique.

Nitrogen assimilation in Citrus based on CitEST data mining

Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)

Microstructural and electric properties of bismuth-layered structured ceramics - SrBi2(Ta1-xNbx)O-9

Ceramic samples of SrBi2(Nb1-xTax)O-9 (0 less than or equal to x less than or equal to 1) were prepared by the solid state reaction method in order to investigate their structural and electrical features as well as obtain useful information to improve the properties of SrBi2(Nb1-xTax)O-9 as a thin film. The X-ray diffraction patterns and the scanning electronic microscopy photomicrographs show no secondary phases but the formation of a solid-state solution for all the composition. The ac conductivity of the samples, measured at 25 degreesC and 100 kHz frequency, decreases with the increase of Ta content. Such results were explained by intrinsic conductivity of pure components.

Pechini's solution as precursor for Eu(III)-containing ZnO films

The flat-panel-display's (FPD) market and demand for highly efficient and colored luminescent films have been growing quickly. In this work, thin films were obtained from Pechini's solution by dip-coating. The green films were thermally treated at 873 K in order to get ZnO:Eu 1 at% thin film. A Schott(R) glass plate hydrothermally treated was used as substrate. The films have a mosaic shaped feature that was observed by optical microscopy. That feature is a result of substrate thermal treatment. The film deposition decreases the substrate transmittance in the visible range. When the F-7(0) -->L-5(6) (392nm) Eu3+ transition is excited, it is possible to detect emission from D-5(0) --> F-7(J) (J = 1, 2, 3 and 4) transitions. The D-5(0) --> F-7(2) transition is also observed by using ZnO excitation wavelengths indicating energy transfer from ZnO to Eu3+ ion. (C) 2003 Elsevier B.V. (USA). All rights reserved.

Spectral redistribution of waveguided emission in BEH-PPV films

We report on spectral redistribution of the photoluminescence (PL) emission from the edge of thin-film planar waveguides of the conjugated polymer BEH-PPV [Poly(2,5-bis(2'-ethyl-hexyl)-1,4-phenylenevinylene] induced by self-absorption in the polymer film. The PL spectra present drastic changes and displace to longer wavelengths with increasing self-absorption. We observe an enhancement of the absolute PL intensity at longer wavelengths, which was interpreted as due to re-emission of self-absorbed photons. The significant efficiency for the PL re-emission suggests the use of self-absorption as a mechanism for tuning the emission into the near infrared.

Effect of Ta2O5 doping on the electrical properties of 0.99SnO(2)center dot 0.01CoO ceramic

The effect of Ta2O5 doping in 0.99SnO(2). 0.01CoO on the microstructure and electrical properties of this ceramic were analyzed in this study. The grain size was found to decrease from 6.87 mu m to 5.68 mu m when the Ta2O5 concentration increased from 0.050 to 0.075 mol%. DC electrical characterization showed a dramatic increase in the current loss and decrease in the non-linear coefficient with the increase of the Ta2O5 concentration. The conduction mechanism is by thermionic emission and the potential barriers are of Schottky type, separated by a thin film. (C) 2000 Kluwer Academic Publishers.

Transport and sensors properties of nanostructured antimony-doped tin oxide films

Tin oxide thin films doped with 7 mol% antimony oxide multilayer were prepared by the polymeric precursor method. Morphological characterization revealed films with round-shaped grains, nanometric size (similar to 13 nm), and low roughness. These films display high transmittance (similar to 80%) in the visible range of transmittance spectra, which is desirable for transparent conductive oxide films. Analysis on electrical resistivity versus temperature data showed two different conduction mechanisms toward the temperature range. The gas sensor properties measurement of the thicker thin film revealed good sensibility for the NOx. (c) 2006 Elsevier B.V. All rights reserved.

A CMOS/SOI single-input PWM discriminator for low-voltage body-implanted applications

A CMOS/SOI circuit to decode Pulse-Width Modulation (PWM) signals is presented as part of a body-implanted neurostimulator for visual prosthesis. Since encoded data is the sole input to the circuit, the decoding technique is based on a novel double-integration concept and does not require low-pass filtering. Non-overlapping control phases are internally derived from the incoming pulses and a fast-settling comparator ensures good discrimination accuracy in the megahertz range. The circuit was integrated on a 2 mum single-metal thin-film CMOS/SOI fabrication process and has an effective area of 2 mm(2). Measured resolution of encoding parameter a is better than 10% at 6 MHz and V-DD = 3.3 V. Idle-mode consumption is 340 LW. Pulses of frequencies up to 15 MHz and alpha = 10% can be discriminated for 2.3 V less than or equal to V-DD less than or equal to 3.3 V. Such an excellent immunity to V-DD deviations meets a design specification with respect to inherent coupling losses on transmitting data and power by means of a transcutaneous link.