Laser beam control, combining, and propagation in atmospheric turbulence

This dissertation is concerned with the control, combining, and propagation of laser beams through a turbulent atmosphere. In the first part we consider adaptive optics: the process of controlling the beam based on information of the current state of the turbulence. If the target is cooperative and provides a coherent return beam, the phase measured near the beam transmitter and adaptive optics can, in principle, correct these fluctuations. However, for many applications, the target is uncooperative. In this case, we show that an incoherent return from the target can be used instead. Using the principle of reciprocity, we derive a novel relation between the field at the target and the scattered field at a detector. We then demonstrate through simulation that an adaptive optics system can utilize this relation to focus a beam through atmospheric turbulence onto a rough surface. In the second part we consider beam combining. To achieve the power levels needed for directed energy applications it is necessary to combine a large number of lasers into a single beam. The large linewidths inherent in high-power fiber and slab lasers cause random phase and intensity fluctuations occurring on sub-nanosecond time scales. We demonstrate that this presents a challenging problem when attempting to phase-lock high-power lasers. Furthermore, we show that even if instruments are developed that can precisely control the phase of high-power lasers; coherent combining is problematic for DE applications. The dephasing effects of atmospheric turbulence typically encountered in DE applications will degrade the coherent properties of the beam before it reaches the target. Finally, we investigate the propagation of Bessel and Airy beams through atmospheric turbulence. It has been proposed that these quasi-non-diffracting beams could be resistant to the effects of atmospheric turbulence. However, we find that atmospheric turbulence disrupts the quasi-non-diffracting nature of Bessel and Airy beams when the transverse coherence length nears the initial aperture diameter or diagonal respectively. The turbulence induced transverse phase distortion limits the effectiveness of Bessel and Airy beams for applications requiring propagation over long distances in the turbulent atmosphere.

Exploiting Nested Parallelism on Heterogeneous Processors

Heterogeneous computing systems have become common in modern processor architectures. These systems, such as those released by AMD, Intel, and Nvidia, include both CPU and GPU cores on a single die available with reduced communication overhead compared to their discrete predecessors. Currently, discrete CPU/GPU systems are limited, requiring larger, regular, highly-parallel workloads to overcome the communication costs of the system. Without the traditional communication delay assumed between GPUs and CPUs, we believe non-traditional workloads could be targeted for GPU execution. Specifically, this thesis focuses on the execution model of nested parallel workloads on heterogeneous systems. We have designed a simulation flow which utilizes widely used CPU and GPU simulators to model heterogeneous computing architectures. We then applied this simulator to non-traditional GPU workloads using different execution models. We also have proposed a new execution model for nested parallelism allowing users to exploit these heterogeneous systems to reduce execution time.

LIVE-Fab – CNC-Programmierung und Montageplanung in einer virtuellen Lernfabrik. Konzepte, Grundlagen, Technik, Anwendung

Am Institut für Arbeitswissenschaft und Betriebsorganisation (ifab) Universität Karlsruhe wird zurzeit das Projekt LIVE-Fab (Lernen in der virtuellen Fabrik) gemeinsam mit der Fachhochschule Landshut, Fachbereich Maschinenbau, durchgeführt. Dieses Projekt wird vom Bundesministerium für Bildung und Forschung (BMBF) im Rahmen des Programms „Neue Medien in der Bildung“ gefördert. Das Ziel des Projektes ist die Entwicklung eines anschaulichen Lehr- und Lernmodells für eine Fabrik als funktionierendes Ganzes. Dazu soll im Rechner eine Modellfabrik mit den Bereichen Wareneingang, Fertigung, Montage und Qualitätssicherung abgebildet werden. Die Fabrik mit ihren Anlagen (Maschinen, Transportsysteme etc.) und Materialflüsse soll in einem 3D-Modell visuell erfassbar sein. Die Grundlagen zur Schaffung einer virtuell funktionierenden Produktion einschließlich Anlagenplanung, Arbeitsvorbereitung, die Mechanismen, Kundenbestellungen und Qualitätsmanagement sollen in einzelnen Fallstudien den Studierenden vermittelt werden. Den Studierenden aus den Fachbereichen Maschinenbau, Wirtschaftsingenieurwesen, Elektrotechnik und Betriebswirtschaft mit technischer Ausrichtung soll mit der virtuellen Fabrik ein Werkzeug an die Hand gegeben werden, mit dem sie die komplexen, ineinander verzahnten Vorgänge eines Produktionsprozesses besser verstehen lernen. Dies bedeutet, dass in der virtuellen Fabrik die inhaltlichen Aspekte mehrerer vorgelagerter Vorlesungen kombiniert werden und dadurch ein Verbund zum Verständnis der Produktionsprozesse geschaffen wird.(DIPF/Orig.)

Eficiência Energética, Gestão de Energia e Integração de Renováveis em Instalações Hospitalares

A presente dissertação é o resultado de um estudo realizado entre Março de 2015 e Março de 2016 centrado no tema Eficiência Energética nos Edifícios, no âmbito da Dissertação do 2º ano do Mestrado em Engenharia Eletrotécnica – Sistemas Elétricos de Energia no Instituto Superior de Engenharia do Porto (ISEP). Atualmente, os edifícios são responsáveis por cerca de 40% do consumo de energia na maioria dos países da europa. Energia consumida, principalmente, no aquecimento, arrefecimento e na alimentação de aparelhos elétricos. Os hospitais, como grandes edifícios, são grandes consumidores de energia e, na maioria dos países europeus, situam-se entre os edifícios públicos menos eficientes. Neste contexto, representam um tipo de edifícios cuja atividade apresenta um potencial de poupança energético importante. O tipo de atividade aí desenvolvida, aliada às especificidades do sector da saúde, faz deste tipo de edifícios um alvo de análise e otimização energética bastante apetecível. O presente trabalho passa pelo estudo do potencial para a eficiência energética de um hospital situado na zona do Porto. Foi, inicialmente, efetuado um levantamento das necessidades energéticas, de modo a identificar os sectores prioritários de atuação. Este estudo conta com a análise dos consumos obtidos através do processo de monitorização, substituição da iluminação existente por uma mais eficiente, a instalação de painéis solares para reduzir o consumo destinado às águas quentes sanitárias, a substituição de caldeira a diesel por caldeira a biomassa, substituição de um chiller por um mais eficiente, entre outros. Os consumos registados no hospital em estudo serão comparados com um plano nacional (Eficiência Energética e Hídrica no Sistema Nacional de Saúde), para, desta forma, se perceber quais os consumos do hospital em estudo, quando comparados com outros hospitais.

Thermal Tracking and Estimation for Microprocessors

Due to increasing integration density and operating frequency of today's high performance processors, the temperature of a typical chip can easily exceed 100 degrees Celsius. However, the runtime thermal state of a chip is very hard to predict and manage due to the random nature in computing workloads, as well as the process, voltage and ambient temperature variability (together called PVT variability). The uneven nature (both in time and space) of the heat dissipation of the chip could lead to severe reliability issues and error-prone chip behavior (e.g. timing errors). Many dynamic power/thermal management techniques have been proposed to address this issue such as dynamic voltage and frequency scaling (DVFS), clock gating and etc. However, most of such techniques require accurate knowledge of the runtime thermal state of the chip to make efficient and effective control decisions. In this work we address the problem of tracking and managing the temperature of microprocessors which include the following sub-problems: (1) how to design an efficient sensor-based thermal tracking system on a given design that could provide accurate real-time temperature feedback; (2) what statistical techniques could be used to estimate the full-chip thermal profile based on very limited (and possibly noise-corrupted) sensor observations; (3) how do we adapt to changes in the underlying system's behavior, since such changes could impact the accuracy of our thermal estimation. The thermal tracking methodology proposed in this work is enabled by on-chip sensors which are already implemented in many modern processors. We first investigate the underlying relationship between heat distribution and power consumption, then we introduce an accurate thermal model for the chip system. Based on this model, we characterize the temperature correlation that exists among different chip modules and explore statistical approaches (such as those based on Kalman filter) that could utilize such correlation to estimate the accurate chip-level thermal profiles in real time. Such estimation is performed based on limited sensor information because sensors are usually resource constrained and noise-corrupted. We also took a further step to extend the standard Kalman filter approach to account for (1) nonlinear effects such as leakage-temperature interdependency and (2) varying statistical characteristics in the underlying system model. The proposed thermal tracking infrastructure and estimation algorithms could consistently generate accurate thermal estimates even when the system is switching among workloads that have very distinct characteristics. Through experiments, our approaches have demonstrated promising results with much higher accuracy compared to existing approaches. Such results can be used to ensure thermal reliability and improve the effectiveness of dynamic thermal management techniques.

Nonlinear Optics and Carrier Dynamics in Nanostructured and Two-Dimensional Materials

Understanding and measuring the interaction of light with sub-wavelength structures and atomically thin materials is of critical importance for the development of next generation photonic devices.  One approach to achieve the desired optical properties in a material is to manipulate its mesoscopic structure or its composition in order to affect the properties of the light-matter interaction.  There has been tremendous recent interest in so called two-dimensional materials, consisting of only a single to a few layers of atoms arranged in a planar sheet.  These materials have demonstrated great promise as a platform for studying unique phenomena arising from the low-dimensionality of the material and for developing new types of devices based on these effects.  A thorough investigation of the optical and electronic properties of these new materials is essential to realizing their potential.  In this work we present studies that explore the nonlinear optical properties and carrier dynamics in nanoporous silicon waveguides, two-dimensional graphite (graphene), and atomically thin black phosphorus. We first present an investigation of the nonlinear response of nanoporous silicon optical waveguides using a novel pump-probe method. A two-frequency heterodyne technique is developed in order to measure the pump-induced transient change in phase and intensity in a single measurement. The experimental data reveal a characteristic material response time and temporally resolved intensity and phase behavior matching a physical model dominated by free-carrier effects that are significantly stronger and faster than those observed in traditional silicon-based waveguides.  These results shed light on the large optical nonlinearity observed in nanoporous silicon and demonstrate a new measurement technique for heterodyne pump-probe spectroscopy. Next we explore the optical properties of low-doped graphene in the terahertz spectral regime, where both intraband and interband effects play a significant role. Probing the graphene at intermediate photon energies enables the investigation of the nonlinear optical properties in the graphene as its electron system is heated by the intense pump pulse. By simultaneously measuring the reflected and transmitted terahertz light, a precise determination of the pump-induced change in absorption can be made. We observe that as the intensity of the terahertz radiation is increased, the optical properties of the graphene change from interband, semiconductor-like absorption, to a more metallic behavior with increased intraband processes. This transition reveals itself in our measurements as an increase in the terahertz transmission through the graphene at low fluence, followed by a decrease in transmission and the onset of a large, photo-induced reflection as fluence is increased.  A hybrid optical-thermodynamic model successfully describes our observations and predicts this transition will persist across mid- and far-infrared frequencies.  This study further demonstrates the important role that reflection plays since the absorption saturation intensity (an important figure of merit for graphene-based saturable absorbers) can be underestimated if only the transmitted light is considered. These findings are expected to contribute to the development of new optoelectronic devices designed to operate in the mid- and far-infrared frequency range.  Lastly we discuss recent work with black phosphorus, a two-dimensional material that has recently attracted interest due to its high mobility and direct, configurable band gap (300 meV to 2eV), depending on the number of atomic layers comprising the sample. In this work we examine the pump-induced change in optical transmission of mechanically exfoliated black phosphorus flakes using a two-color optical pump-probe measurement. The time-resolved data reveal a fast pump-induced transparency accompanied by a slower absorption that we attribute to Pauli blocking and free-carrier absorption, respectively. Polarization studies show that these effects are also highly anisotropic - underscoring the importance of crystal orientation in the design of optical devices based on this material. We conclude our discussion of black phosphorus with a study that employs this material as the active element in a photoconductive detector capable of gigahertz class detection at room temperature for mid-infrared frequencies.

A comprehensive study of multiplicative attribute graph model

Graphs are powerful tools to describe social, technological and biological networks, with nodes representing agents (people, websites, gene, etc.) and edges (or links) representing relations (or interactions) between agents. Examples of real-world networks include social networks, the World Wide Web, collaboration networks, protein networks, etc. Researchers often model these networks as random graphs. In this dissertation, we study a recently introduced social network model, named the Multiplicative Attribute Graph model (MAG), which takes into account the randomness of nodal attributes in the process of link formation (i.e., the probability of a link existing between two nodes depends on their attributes). Kim and Lesckovec, who defined the model, have claimed that this model exhibit some of the properties a real world social network is expected to have. Focusing on a homogeneous version of this model, we investigate the existence of zero-one laws for graph properties, e.g., the absence of isolated nodes, graph connectivity and the emergence of triangles. We obtain conditions on the parameters of the model, so that these properties occur with high or vanishingly probability as the number of nodes becomes unboundedly large. In that regime, we also investigate the property of triadic closure and the nodal degree distribution.

Mid-infrared photonic sensors based on metamaterial structures

In this work three different metallic metamaterials (MMs) structures such as asymmetric split ring resonators (A-SRRs), dipole and split H-shaped (ASHs) structures that support plasmonic resonances have been developed. The aim of the work involves the optimization of photonic sensor based on plasmonic resonances and surface enhanced infrared absorption (SEIRA) from the MM structures. The MMs structures were designed to tune their plasmonic resonance peaks in the mid-infrared region. The plasmonic resonance peaks produced are highly dependent on the structural dimension and polarisation of the electromagnetic (EM) source. The ASH structure particularly has the ability to produce the plasmonic resonance peak with dual polarisation of the EM source. The double resonance peaks produced due to the asymmetric nature of the structures were optimized by varying the fundamental parameters of the design. These peaks occur due to hybridization of the individual elements of the MMs structure. The presence of a dip known as a trapped mode in between the double plasmonic peaks helps to narrow the resonances. A periodicity greater than twice the length and diameter of the metallic structure was applied to produce narrow resonances for the designed MMs. A nanoscale gap in each structure that broadens the trapped mode to narrow the plasmonic resonances was also used. A thickness of 100 nm gold was used to experimentally produce a high quality factor of 18 in the mid-infrared region. The optimised plasmonic resonance peaks was used for detection of an analyte, 17β-estradiol. 17β-estradiol is mostly responsible for the development of human sex organs and can be found naturally in the environment through human excreta. SEIRA was the method applied to the analysis of the analyte. The work is important in the monitoring of human biology and in water treatment. Applying this method to the developed nano-engineered structures, enhancement factors of 10^5 and a sensitivity of 2791 nm/RIU was obtained. With this high sensitivity a figure of merit (FOM) of 9 was also achieved from the sensors. The experiments were verified using numerical simulations where the vibrational resonances of the C-H stretch from 17β-estradiol were modelled. Lastly, A-SRRs and ASH on waveguides were also designed and evaluated. These patterns are to be use as basis for future work.

Spatial and temporal measurements using polyoxometalate, enzymatic and biofilm layers on a CMOS 0.35 μm 64 X 64-pixel I.S.F.E.T. array sensor

This thesis presents the achievements and scientific work conducted using a previously designed and fabricated 64 x 64-pixel ion camera with the use of a 0.35 μm CMOS technology. We used an array of Ion Sensitive Field Effect Transistors (ISFETs) to monitor and measure chemical and biochemical reactions in real time. The area of our observation was a 4.2 x 4.3 mm silicon chip while the actual ISFET array covered an area of 715.8 x 715.8 μm consisting of 4096 ISFET pixels in total with a 1 μm separation space among them. The ion sensitive layer, the locus where all reactions took place was a silicon nitride layer, the final top layer of the austriamicrosystems 0.35 μm CMOS technology used. Our final measurements presented an average sensitivity of 30 mV/pH. With the addition of extra layers we were able to monitor a 65 mV voltage difference during our experiments with glucose and hexokinase, whereas a difference of 85 mV was detected for a similar glucose reaction mentioned in literature, and a 55 mV voltage difference while performing photosynthesis experiments with a biofilm made from cyanobacteria, whereas a voltage difference of 33.7 mV was detected as presented in literature for a similar cyanobacterial species using voltamemtric methods for detection. To monitor our experiments PXIe-6358 measurement cards were used and measurements were controlled by LabVIEW software. The chip was packaged and encapsulated using a PGA-100 chip carrier and a two-component commercial epoxy. Printed circuit board (PCB) has also been previously designed to provide interface between the chip and the measurement cards.

Joint Optimization for Social Content Delivery in Wireless Networks

Over the last decade, success of social networks has significantly reshaped how people consume information. Recommendation of contents based on user profiles is well-received. However, as users become dominantly mobile, little is done to consider the impacts of the wireless environment, especially the capacity constraints and changing channel. In this dissertation, we investigate a centralized wireless content delivery system, aiming to optimize overall user experience given the capacity constraints of the wireless networks, by deciding what contents to deliver, when and how. We propose a scheduling framework that incorporates content-based reward and deliverability. Our approach utilizes the broadcast nature of wireless communication and social nature of content, by multicasting and precaching. Results indicate this novel joint optimization approach outperforms existing layered systems that separate recommendation and delivery, especially when the wireless network is operating at maximum capacity. Utilizing limited number of transmission modes, we significantly reduce the complexity of the optimization. We also introduce the design of a hybrid system to handle transmissions for both system recommended contents ('push') and active user requests ('pull'). Further, we extend the joint optimization framework to the wireless infrastructure with multiple base stations. The problem becomes much harder in that there are many more system configurations, including but not limited to power allocation and how resources are shared among the base stations ('out-of-band' in which base stations transmit with dedicated spectrum resources, thus no interference; and 'in-band' in which they share the spectrum and need to mitigate interference). We propose a scalable two-phase scheduling framework: 1) each base station obtains delivery decisions and resource allocation individually; 2) the system consolidates the decisions and allocations, reducing redundant transmissions. Additionally, if the social network applications could provide the predictions of how the social contents disseminate, the wireless networks could schedule the transmissions accordingly and significantly improve the dissemination performance by reducing the delivery delay. We propose a novel method utilizing: 1) hybrid systems to handle active disseminating requests; and 2) predictions of dissemination dynamics from the social network applications. This method could mitigate the performance degradation for content dissemination due to wireless delivery delay. Results indicate that our proposed system design is both efficient and easy to implement.

Fighting Evasive Malware with DVasion

Malware is a foundational component of cyber crime that enables an attacker to modify the normal operation of a computer or access sensitive, digital information. Despite the extensive research performed to identify such programs, existing schemes fail to detect evasive malware, an increasingly popular class of malware that can alter its behavior at run-time, making it difficult to detect using today’s state of the art malware analysis systems. In this thesis, we present DVasion, a comprehensive strategy that exposes such evasive behavior through a multi-execution technique. DVasion successfully detects behavior that would have been missed by traditional, single-execution approaches, while addressing the limitations of previously proposed multi-execution systems. We demonstrate the accuracy of our system through strong parallels with existing work on evasive malware, as well as uncover the hidden behavior within 167 of 1,000 samples.

A III-V channel field effect transistor for non-classical CMOS: process optimisation for improved gate stack function

This thesis describes a collection of studies into the electrical response of a III-V MOS stack comprising metal/GaGdO/GaAs layers as a function of fabrication process variables and the findings of those studies. As a result of this work, areas of improvement in the gate process module of a III-V heterostructure MOSFET were identified. Compared to traditional bulk silicon MOSFET design, one featuring a III-V channel heterostructure with a high-dielectric-constant oxide as the gate insulator provides numerous benefits, for example: the insulator can be made thicker for the same capacitance, the operating voltage can be made lower for the same current output, and improved output characteristics can be achieved without reducing the channel length further. It is known that transistors composed of III-V materials are most susceptible to damage induced by radiation and plasma processing. These devices utilise sub-10 nm gate dielectric films, which are prone to contamination, degradation and damage. Therefore, throughout the course of this work, process damage and contamination issues, as well as various techniques to mitigate or prevent those have been investigated through comparative studies of III-V MOS capacitors and transistors comprising various forms of metal gates, various thicknesses of GaGdO dielectric, and a number of GaAs-based semiconductor layer structures. Transistors which were fabricated before this work commenced, showed problems with threshold voltage control. Specifically, MOSFETs designed for normally-off (VTH > 0) operation exhibited below-zero threshold voltages. With the results obtained during this work, it was possible to gain an understanding of why the transistor threshold voltage shifts as the gate length decreases and of what pulls the threshold voltage downwards preventing normally-off device operation. Two main culprits for the negative VTH shift were found. The first was radiation damage induced by the gate metal deposition process, which can be prevented by slowing down the deposition rate. The second was the layer of gold added on top of platinum in the gate metal stack which reduces the effective work function of the whole gate due to its electronegativity properties. Since the device was designed for a platinum-only gate, this could explain the below zero VTH. This could be prevented either by using a platinum-only gate, or by matching the layer structure design and the actual gate metal used for the future devices. Post-metallisation thermal anneal was shown to mitigate both these effects. However, if post-metallisation annealing is used, care should be taken to ensure it is performed before the ohmic contacts are formed as the thermal treatment was shown to degrade the source/drain contacts. In addition, the programme of studies this thesis describes, also found that if the gate contact is deposited before the source/drain contacts, it causes a shift in threshold voltage towards negative values as the gate length decreases, because the ohmic contact anneal process affects the properties of the underlying material differently depending on whether it is covered with the gate metal or not. In terms of surface contamination; this work found that it causes device-to-device parameter variation, and a plasma clean is therefore essential. This work also demonstrated that the parasitic capacitances in the system, namely the contact periphery dependent gate-ohmic capacitance, plays a significant role in the total gate capacitance. This is true to such an extent that reducing the distance between the gate and the source/drain ohmic contacts in the device would help with shifting the threshold voltages closely towards the designed values. The findings made available by the collection of experiments performed for this work have two major applications. Firstly, these findings provide useful data in the study of the possible phenomena taking place inside the metal/GaGdO/GaAs layers and interfaces as the result of chemical processes applied to it. In addition, these findings allow recommendations as to how to best approach fabrication of devices utilising these layers.

Contactless Spectral-Dependent Measurement of Bulk Lifetime and Surface Recombination Velocity in Silicon Photovoltaic Materials

Charge carrier lifetime measurements in bulk or unfinished photovoltaic (PV) materials allow for a more accurate estimate of power conversion efficiency in completed solar cells. In this work, carrier lifetimes in PV- grade silicon wafers are obtained by way of quasi-steady state photoconductance measurements. These measurements use a contactless RF system coupled with varying narrow spectrum input LEDs, ranging in wavelength from 460 nm to 1030 nm. Spectral dependent lifetime measurements allow for determination of bulk and surface properties of the material, including the intrinsic bulk lifetime and the surface recombination velocity. The effective lifetimes are fit to an analytical physics-based model to determine the desired parameters. Passivated and non-passivated samples are both studied and are shown to have good agreement with the theoretical model.

Leader Based Cyclic Pursuit

In this work a system of autonomous agents engaged in cyclic pursuit (under constant bearing (CB) strategy) is considered, for which one informed agent (the leader) also senses and responds to a stationary beacon. Building on the framework proposed in a previous work on beacon-referenced cyclic pursuit, necessary and suffi- cient conditions for the existence of circling equilibria in a system with one informed agent are derived, with discussion of stability and performance. In a physical testbed, the leader (robot) is equipped with a sound sensing apparatus composed of a real time embedded system, estimating direction of arrival of sound by an Interaural Level and Phase Difference Algorithm, using empirically determined phase and level signatures, and breaking front-back ambiguity with appropriate sensor placement. Furthermore a simple framework for implementing and evaluating the performance of control laws with the Robot Operating System (ROS) is proposed, demonstrated, and discussed.

The development of planar high-K/III-V p-channel MOSFETs for post-silicon CMOS

Conventional Si complementary-metal-oxide-semiconductor (CMOS) scaling is fast approaching its limits. The extension of the logic device roadmap for future enhancements in transistor performance requires non-Si materials and new device architectures. III-V materials, due to their superior electron transport properties, are well poised to replace Si as the channel material beyond the 10nm technology node to mitigate the performance loss of Si transistors from further reductions in supply voltage to minimise power dissipation in logic circuits. However several key challenges, including a high quality dielectric/III-V gate stack, a low-resistance source/drain (S/D) technology, heterointegration onto a Si platform and a viable III-V p-metal-oxide-semiconductor field-effect-transistor (MOSFET), need to be addressed before III-Vs can be employed in CMOS. This Thesis specifically addressed the development and demonstration of planar III-V p-MOSFETs, to complement the n-MOSFET, thereby enabling an all III-V CMOS technology to be realised. This work explored the application of InGaAs and InGaSb material systems as the channel, in conjunction with Al2O3/metal gate stacks, for p-MOSFET development based on the buried-channel flatband device architecture. The body of work undertaken comprised material development, process module development and integration into a robust fabrication flow for the demonstration of p-channel devices. The parameter space in the design of the device layer structure, based around the III-V channel/barrier material options of In_x≥0.53Ga_1-xAs/In_0.52Al_0.48As and In_x≥0.1Ga_1-xSb/AlSb, was systematically examined to improve hole channel transport. A mobility of 433 cm²/Vs, the highest room temperature hole mobility of any InGaAs quantum-well channel reported to date, was obtained for the In_0.85Ga_0.15As (2.1% strain) structure. S/D ohmic contacts were developed based on thermally annealed Au/Zn/Au metallisation and validated using transmission line model test structures. The effects of metallisation thickness, diffusion barriers and de-oxidation conditions were examined. Contacts to InGaSb-channel structures were found to be sensitive to de-oxidation conditions. A fabrication process, based on a lithographically-aligned double ohmic patterning approach, was realised for deep submicron gate-to-source/drain gap (L_side) scaling to minimise the access resistance, thereby mitigating the effects of parasitic S/D series resistance on transistor performance. The developed process yielded gaps as small as 20nm. For high-k integration on GaSb, ex-situ ammonium sulphide ((NH₄)₂S) treatments, in the range 1%-22%, for 10min at 295K were systematically explored for improving the electrical properties of the Al₂O₃/GaSb interface. Electrical and physical characterisation indicated the 1% treatment to be most effective with interface trap densities in the range of 4 - 10×10¹²cm^-2eV^-1 in the lower half of the bandgap. An extended study, comprising additional immersion times at each sulphide concentration, was further undertaken to determine the surface roughness and the etching nature of the treatments on GaSb. A number of p-MOSFETs based on III-V-channels with the most promising hole transport and integration of the developed process modules were successfully demonstrated in this work. Although the non-inverted InGaAs-channel devices showed good current modulation and switch-off characteristics, several aspects of performance were non-ideal; depletion-mode operation, modest drive current (I_d,sat=1.14mA/mm), double peaked transconductance (g_m=1.06mS/mm), high subthreshold swing (SS=301mV/dec) and high on-resistance (R_on=845kΩ.μm). Despite demonstrating substantial improvement in the on-state metrics of I_d,sat (11×), g_m (5.5×) and R_on (5.6×), inverted devices did not switch-off. Scaling gate-to-source/drain gap (L_side) from 1μm down to 70nm improved I_d,sat (72.4mA/mm) by a factor of 3.6 and gm (25.8mS/mm) by a factor of 4.1 in inverted InGaAs-channel devices. Well-controlled current modulation and good saturation behaviour was observed for InGaSb-channel devices. In the on-state In_0.3Ga_0.7Sb-channel (I_d,sat=49.4mA/mm, g_m=12.3mS/mm, R_on=31.7kΩ.μm) and In_0.4Ga_0.6Sb-channel (I_d,sat=38mA/mm, g_m=11.9mS/mm, R_on=73.5kΩ.μm) devices outperformed the InGaAs-channel devices. However the devices could not be switched off. These findings indicate that III-V p-MOSFETs based on InGaSb as opposed to InGaAs channels are more suited as the p-channel option for post-Si CMOS.