The reduction of Eu3+ in SrB6O10 prepared in air and the luminescence of SrB6O10 : Eu

The reduction of Eu3+ to Eu2+ in SrB6O10 prepared in air by a high-temperature solid state reaction was studied. The luminescent properties of Eu2+ in this matrix show f-d broad band emission peaking at about 386 and 432 nm at room temperature. A charge compensation mechanism is proposed as a possible explanation. The luminescence of Eu3+ with f-f transitions was studied in this sample and reflected that the Eu3+ ion occupied a site with non-centro-symmetry. The ESR spectrum was used to detect the existence of Eu2+ in the samples. (C) 1998 Elsevier Science S.A.

Structure, electric and magnetic properties of new compounds CdYMWO7 (M = Cr and Mn)

Two new compounds with the formula of CdYMWO7 (M = Cr, Mn) were prepared by solid state reaction. They crystallized with orthorhombic structure with the cell parameters of a = 11.7200 Angstrom, b = 7.1779 Angstrom, c = 6.9805 Angstrom (CdYCrWO7), and a = 11.7960 Angstrom, b = 6.1737 Angstrom, c = 7.6530 Angstrom (CdYMnWO7). These compounds are insulators with high resistivities at room temperature. The temperature dependence of the magnetic susceptibility of CdYMWO7 (M = Cr and Mn) show Curie-Weiss Law's behaviors from 80 to 300 K. The magnetic moments at room temperature fit very well with those corresponding to Cr3+ and Mn3+ ions. This suggests that both Cr and Mn ions exist in + 3 oxidation state in CdYMWO7 compounds. (C) 1998 Elsevier Science Ltd. All rights reserved.

Synthesis and luminescence characteristics of LiMgAlF6:Ln(3+) (Ln = Ce, Eu, Tb)

By solid state reaction, LiMgAlF6 and LiMgAlF6:Ln(3+) are synthetized with the ratio 120/100/110 of LiF/MgF2/AlF3, at 1008 K, in high-purity Ar stream. Their crystal structure which belongs to hexagonal system are determined by X-Ray-Diffraction (XRD). Luminescence characteristics of Ce3+, Eu3+, Tb3+ and sensitization of Ce3+ to Tb3+ in LiMgAlF6 are studied. It is shown that the sensitization of Ce3+ to Tb3+ is efficient and a bright green emission is observed.

Luminescence properties of Ce3+ in KMF3(M=Mg, Ca, Sr, Ba) hosts with perovskite structure

KMF3(M = Mg, Ca, Sr, Ba) compounds were synthesized by solid state reaction under argon atmosphere. Their structures were determined by X-ray diffraction. It belongs to cubic system with perovskite structure. The excitation and emission spectra of KMF3:Ce3+ were measured. According to the characteristics of spectral structures, the occupation site of Ce3+ is discussed.

Structure and luminescence properties of some new AgLnW(2)O(8) compounds

Three new compounds, AgLnW(2)O(8) (Ln(3+)=Eu, Gd or Tb), have been prepared by a solid-state reaction and crystallize with a scheelite-related monoclinic symmetry. Their IR spectra show absorption transitions in the region 1000-400 cm(-1) similar to KLnW(2)O(8). Broad excitation and emission bands of the tungstate group with a large Stokes shift (12573 cm(-1)) are observed in AgGdW2O8. Excitation and emission spectra of AgLnW(2)O(8) (Ln=Eu or Tb) show that energy transfer from tungstate to Eu and Tb occurs and that Eu3+ ions occupy a unique crystallographic site with C-2 site symmetry.

Magnetic and electric properties of Bi(La)Sr(Ca)Mn2O6

Bi1-xLaxSrMn2O6 and BiSr1-xCaxMn2O6 are prepared by solid state reaction. They are n-type semiconductors with ferromagnetism at room temperture. When Bi is substituted partly by rare earth, a negative magnetoresistance effect is observed in the pellet of Bi1-xLaxSrMn2O6. There are semiconductor-metal transitions at 820 K in BiSrMn2O6. The transitions are attributed to the magnetic transition at high temperature. The substitution of Ca for Sr makes the transition temperature increase. However, when Bi is partly substituted by La, the solid solution does not change into metal. (C) 1996 Academic Press, Inc.

Sol-gel synthesis and luminescence of Y4Al2O9:RE3+(RE=Eu, Tb)

Y4Al2O9 (YAM) was prepared by a sol-gel process, using yttrium and aluminum citrate complexes as precursors. The sol-gel process produced single-phase YAM at 900 degrees C, as opposed to the conventional solid-state reaction, which led to the formation of other phases, even if at 1600 degrees C. The emission and excitation spectra of Eu3+ and Tb3+ in YAM showed the existence of two luminescence centers, agreeing with the crystal structure of YAM. The spectral properties of the samples are discussed.

Studies on the synthetic, structural, electrical and magnetic properties of Ln(n)MCo(n)O(3n+1) (Ln=Sm, Gd; M=Sr, Ba; n=1,2)

Three new oxides Sm2SrCo2O7, Sm2BaCo2O7 and Gd2SrCo2O7 have been synthesized successfully by solid state reaction mathod. The X-Ray diffraction spectra show that they are all isostructural with Sr3Ti2O7, and Ln(2)SrCo(2)O(7)(Ln=Sm,Gd) crystallized in tetragonal system, Sm2BaCo2O7 in orthrhombic system. The Co-O bonds in CoO2 planes of Ln(2)SrCo(2)O(7) are shorter than those of LnSrCoO(4)(Ln=Sm, Gd), and so their delectrons are more delocalized and their electrical resistivities are smaller. The electrical resistivities versus temperature in the range 300 similar to 1100K showed that the five brides show the characters of weakly localized systems. In the lower temperature range, the magnetic behaviors of Gd2SrCo2O7 and GdSrCoO4 fit Curie-Weiss law well, and the magnetic exchange reaction in CoO2 sublattices of Gd2SrCo2O7 is ferromagnetic, but that of GdSrCoO4 is antiferromagnetic. The other three oxides with Sm3+ showed complex magnetic behaviors which is perhaps related with the complexity of Sm3+.

THE EFFECT ON PHYSICAL-PROPERTIES OF THE SUBSTITUTION OF CA OR BA FOR SR IN NDSRNIO4

A new solid solution series, NdSr(1-x)M(x)NiO(4) (M = Ca: 0.0 less than or equal to x less than or equal to 1.0; M = Ba: 0.0 less than or equal to x less than or equal to 0.6), was synthesized by solid state reaction, and the structures, magnetic and electrical properties and optical spectra of this series have been studied. All the samples crystalized in tetragonal systems, with the exception of NdCaNiO4, which crystallized in the orthohombic system. IR spectra of NdSr1-xCaxNiO4 indicated that the lengths of two Ni-O bonds decrease with increasing Ca content. The electrical conduction changed from metallic-type to semiconductive-type when x greater than or equal to 0.4 (M = Ca, Ba), and the room temperature resistivities of NdSr1-xCaxNiO4 increased with the increase of Ca content. Magnetic susceptibility measurements revealed that Ni+3 ions in all the samplies were in low-spin state over the temperature range 77-300 K.

PREPARATION AND ELECTRICAL-PROPERTIES OF BISMUTH STRONTIUM DIMANGANESE HEXOXIDE [BISRMN2O6]

BiSrMn2O6 is prepared by solid state reaction at 850 degrees C. It is tetragonal with a= 0.7821nm c= 0.3790 nm. It is a black n-type semiconductor below 820K. Its resistivity is 3 Omega-CM at room temperature. A semiconductor -metal transition is observed around 820K, Bi1+xSr1-xMn2O6-y is a solid solution for -0.2 less than or equal to x less than or equal to 0.2. Its unit cell dimensions increase but resistivity decreases when the Bi contents increase.

THE VALENCE CHANGE FROM RE3+ TO RE2+ (RE-EQUIVALENT-TO-EU, SM, YB) IN SRB4O7-RE PREPARED IN AIR AND THE SPECTRAL PROPERTIES OF RE2+

A valence change from RE3+ to RE2+ (RE=Eu, Sm, Yb) was observed in samples of SrB4O7: RE prepared by solid state reaction at high temperature in air. The phosphors SrB4O7: RE2+ show efficient luminescence at room temperature. The broad band d-f emissions of Eu2+ and Yb2+ are at 367 and 360 nm respectively. The sharp line f-f emissions of the Sm2+ ion (5D0-F-7(J)) are in the range 680-780 nm. The probable reasons for the valence change of Eu, Sm and Yb in this host are discussed.

THE OPTICAL AND ELECTRICAL-PROPERTIES OF DYSPROSIUM AND YTTERBIUM MONOPHOSPHIDES

Dysprosium and ytterbium monophosphides have been prepared by the solid state reaction. The optical and electrical properties have been studied. Evidence that DyP and YbP are semiconductors has been obtained from the study of the absorption spectrum, the negative temperature coefficient of resistance and the rectifying effect. Their energy gaps are determined as 1.15 eV for DyP and 1.30 eV for YbP, electric conduction type is n-type, resistivities are about 10(-2) ohm cm and Hall mobility is 8.5-80 cm2/Vs. The p-n junction is formed on the LnP/Si.

SYNTHESIS OF K5LALI2F10, K5GDLI2F10, K5YLI2F10 AND LUMINESCENCE OF CE-3+

The compounds, K_5LnLi_2F_(10)(Ln=La, Gd, Y) were synthesized by solid-state reaction in argon atmosphere. Powder X-ray diffraction patterns showed that K_5LnLi_2F_(10) is isostructural with K_5NdLi_2F_(10)(KNLF) except K_5YLi_2F_(10). The cell parameters and volumes of K_5LnLi_2F_(10)(Ln=La, Ce, Gd) were calculated. They decrease regularly with radii of La~(3+), Ce~(3+) and Gd~(3+). The excitation and fluorescent spactra of K_5Ce_xLn_(1-x) Li_2F_(10) were determined. It was found that the excitat...

Tracing the reactive melting of glass-forming silicate batches by in situ Na-23 NMR

Winter, Rudolf; Jones, A.R.; Florian, P.; Massiot, D., (2005) 'Tracing the reactive melting of glass-forming silicate batches by in situ Na-23 NMR', Journal of Physical Chemistry B 109(10) pp.4324-4332 RAE2008

Effect of current stressing on the reliability of 63Sn37Pb solder joints

The effect of current stressing on the reliability of 63Sn37Pb solder joints with Cu pads was investigated at temperatures of −5 °C and 125 °C up to 600 h. The samples were stressed with 3 A current (6.0 × 102 A/cm2 in the solder joint with diameter of 800 μm and 1.7 × 104 A/cm2 in the Cu trace with cross section area of 35 × 500 μm). The temperatures of the samples and interfacial reaction within the solder joints were examined. The microstructural change of the solder joints aged at 125 °C without current flow was also evaluated for comparison. It was confirmed that the current flow could cause the temperature of solder joints to rise rapidly and remarkably due to accumulation of massive Joule heat generated by the Cu trace. The solder joints stressed at 125 °C with 3 A current had an extensive growth of Cu6Sn5 and Cu3Sn intermetallic compounds (IMC) at both top and bottom solder-to-pad interfaces. It was a direct result of accelerated aging rather than an electromigration or thermomigration effect in this experiment. The kinetic is believed to be bulk diffusion controlled solid-state reaction, irrespective of the electron flow direction. When stressed at −5 °C with 3 A current, no significant change in microstructure and composition of the solder joints had occurred due to a very low diffusivity of the atoms as most Joule heat was eliminated at low temperature. The IMC evolution of the solder joints aged at 125 °C exhibited a subparabolic growth behavior, which is presumed to be a combined mechanism of grain boundary diffusion and bulk diffusion. This is mainly ascribed to the retardant effect against the diffusion course by the sufficiently thick IMC layer that was initially formed during the reflow soldering.