Intermediate band solar energy conversion in ZnTeO

Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe.

Electrochemical potentials (Quasi-Fermi Levels) and the operation of hot-carrier, impact-ionization, and intermediate-band solar cells

In the framework of the so-called third generation solar cells, three main concepts have been proposed in order to exceed the limiting efficiency of single-gap solar cells: the hot-carrier solar cell, the impact-ionization or multiple-exciton-generation solar cell, and the intermediate-band solar cell. At first sight, the three concepts are different, but in this paper, we illustrate how all these concepts, including the single-gap solar cell, share a common trunk that we call "core photovoltaic material." We demonstrate that each one of these next-generation concepts differentiates in fact from this trunk depending on the hypotheses that are made about the physical principles governing the electron electrochemical potentials. In the process, we also clarify the differences between electron, phonon, and photon chemical potentials (the three fundamental particles involved in the operation of the solar cell). The in-depth discussion of the physics involved about the operation of these cells also provides new insights about the operation of these cells.

The feasibility of high-efficiency InAs/GaAs quantum dot intermediate band solar cells

In recent years, all the operating principles of intermediate band behaviour have been demonstrated in InAs/GaAs quantum dot (QD) solar cells. Having passed this hurdle, a new stage of research is underway, whose goal is to deliver QD solar cells with efficiencies above those of state-of-the-art single-gap devices. In this work, we demonstrate that this is possible, using the present InAs/GaAs QD system, if the QDs are made to be radiatively dominated, and if absorption enhancements are achieved by a combination of increasing the number of QDs and light trapping. A quantitative prediction is also made of the absorption enhancements required, suggesting that a 30 fold increase in the number of QDs and a light trapping enhancement of 10 are sufficient. Finally, insight is given into the relative merits of absorption enhancement via increasing QD numbers and via light trapping.

High isolation series-shunt photoconductive microwave switch

This article presents a wide band compact high isolation photoconductive switch, which is based on the series-shunt switch design with three photoconductive switches made of diced high-resistivity silicon wafer placed over a microstrip gap and activated by 808-nm near-infrared laser diodes. The switch shows an insertion loss of 1.2 dB and an isolation of 44.8 dB at 2 GHz. It is easy to operate and control by light, high-speed, electromagnetically transparent and it does not require any biasing circuits.

Two-photon photocurrent and voltage up-conversion in a quantum dot intermediate band solar cell

It has been proposed that the use of self-assembled quantum dot (QD) arrays can break the Shockley-Queisser efficiency limit by extending the absorption of solar cells into the low-energy photon range while preserving their output voltage. This would be possible if the infrared photons are absorbed in the two sub-bandgap QD transitions simultaneously and the energy of two photons is added up to produce one single electron-hole pair, as described by the intermediate band model. Here, we present an InAs/Al 0.25Ga 0.75As QD solar cell that exhibits such electrical up-conversion of low-energy photons. When the device is monochromatically illuminated with 1.32 eV photons, open-circuit voltages as high as 1.58 V are measured (for a total gap of 1.8 eV). Moreover, the photocurrent produced by illumination with photons exciting the valence band to intermediate band (VB-IB) and the intermediate band to conduction band (IB-CB) transitions can be both spectrally resolved. The first corresponds to the QD inter-band transition and is observable for photons of energy mayor que 1 eV, and the later corresponds to the QD intra-band transition and peaks around 0.5 eV. The voltage up-conversion process reported here for the first time is the key to the use of the low-energy end of the solar spectrum to increase the conversion efficiency, and not only the photocurrent, of single-junction photovoltaic devices. In spite of the low absorption threshold measured in our devices - 0.25 eV - we report open-circuit voltages at room temperature as high as 1.12 V under concentrated broadband illumination.

Research on wide-bandgap intermediate band solar cells and development of experimental techniques for their characterization

El trabajo que ha dado lugar a esta Tesis Doctoral se enmarca en la invesitagación en células solares de banda intermedia (IBSCs, por sus siglas en inglés). Se trata de un nuevo concepto de célula solar que ofrece la posibilidad de alcanzar altas eficiencias de conversión fotovoltaica. Hasta ahora, se han demostrado de manera experimental los fundamentos de operación de las IBSCs; sin embargo, esto tan sólo has sido posible en condicines de baja temperatura. El concepto de banda intermedia (IB, por sus siglas en inglés) exige que haya desacoplamiento térmico entre la IB y las bandas de valencia y conducción (VB and CB, respectivamente, por sus siglas en inglés). Los materiales de IB actuales presentan un acoplamiento térmico demasiado fuerte entre la IB y una de las otras dos bandas, lo cual impide el correcto funcionamiento de las IBSCs a temperatura ambiente. En el caso particular de las IBSCs fabricadas con puntos cuánticos (QDs, por sus siglas en inglés) de InAs/GaAs - a día de hoy, la tecnología de IBSC más estudiada - , se produce un rápido intercambio de portadores entre la IB y la CB, por dos motivos: (1) una banda prohibida estrecha (< 0.2 eV) entre la IB y la CB, E^, y (2) la existencia de niveles electrónicos entre ellas. El motivo (1) implica, a su vez, que la máxima eficiencia alcanzable en estos dispositivos es inferior al límite teórico de la IBSC ideal, en la cual E^ = 0.71 eV. En este contexto, nuestro trabajo se centra en el estudio de IBSCs de alto gap (o banda prohibida) fabricadsas con QDs, o lo que es lo mismo, QD-IBSCs de alto gap. Hemos fabricado e investigado experimentalmente los primeros prototipos de QD-IBSC en los que se utiliza AlGaAs o InGaP para albergar QDs de InAs. En ellos demostramos une distribución de gaps mejorada con respecto al caso de InAs/GaAs. En concreto, hemos medido valores de E^ mayores que 0.4 eV. En los prototipos de InAs/AlGaAs, este incremento de E^ viene acompaado de un incremento, en más de 100 meV, de la energía de activación del escape térmico. Además, nuestros dispositivos de InAs/AlGaAs demuestran conversión a la alza de tensión; es decir, la producción de una tensión de circuito abierto mayor que la energía de los fotones (dividida por la carga del electrón) de un haz monocromático incidente, así como la preservación del voltaje a temperaura ambiente bajo iluminación de luz blanca concentrada. Asimismo, analizamos el potencial para detección infrarroja de los materiales de IB. Presentamos un nuevo concepto de fotodetector de infrarrojos, basado en la IB, que hemos llamado: fotodetector de infrarrojos activado ópticamente (OTIP, por sus siglas en inglés). Nuestro novedoso dispositivo se basa en un nuevo pricipio físico que permite que la detección de luz infrarroja sea conmutable (ON y OFF) mediante iluminación externa. Hemos fabricado un OTIP basado en QDs de InAs/AlGaAs con el que demostramos fotodetección, bajo incidencia normal, en el rango 2-6/xm, activada ópticamente por un diodoe emisor de luz de 590 nm. El estudio teórico del mecanismo de detección asistido por la IB en el OTIP nos lleva a poner en cuestión la asunción de quasi-niveles de Fermi planos en la zona de carga del espacio de una célula solar. Apoyados por simuaciones a nivel de dispositivo, demostramos y explicamos por qué esta asunción no es válida en condiciones de corto-circuito e iluminación. También llevamos a cabo estudios experimentales en QD-IBSCs de InAs/AlGaAs con la finalidad de ampliar el conocimiento sobre algunos aspectos de estos dispositivos que no han sido tratados aun. En particular, analizamos el impacto que tiene el uso de capas de disminución de campo (FDLs, por sus siglas en inglés), demostrando su eficiencia para evitar el escape por túnel de portadores desde el QD al material anfitrión. Analizamos la relación existente entre el escape por túnel y la preservación del voltaje, y proponemos las medidas de eficiencia cuántica en función de la tensión como una herramienta útil para evaluar la limitación del voltaje relacionada con el túnel en QD-IBSCs. Además, realizamos medidas de luminiscencia en función de la temperatura en muestras de InAs/GaAs y verificamos que los resltados obtenidos están en coherencia con la separación de los quasi-niveles de Fermi de la IB y la CB a baja temperatura. Con objeto de contribuir a la capacidad de fabricación y caracterización del Instituto de Energía Solar de la Universidad Politécnica de Madrid (IES-UPM), hemos participado en la instalación y puesta en marcha de un reactor de epitaxia de haz molecular (MBE, por sus siglas en inglés) y el desarrollo de un equipo de caracterización de foto y electroluminiscencia. Utilizando dicho reactor MBE, hemos crecido, y posteriormente caracterizado, la primera QD-IBSC enteramente fabricada en el IES-UPM. ABSTRACT The constituent work of this Thesis is framed in the research on intermediate band solar cells (IBSCs). This concept offers the possibility of achieving devices with high photovoltaic-conversion efficiency. Up to now, the fundamentals of operation of IBSCs have been demonstrated experimentally; however, this has only been possible at low temperatures. The intermediate band (IB) concept demands thermal decoupling between the IB and the valence and conduction bands. Stateof- the-art IB materials exhibit a too strong thermal coupling between the IB and one of the other two bands, which prevents the proper operation of IBSCs at room temperature. In the particular case of InAs/GaAs quantum-dot (QD) IBSCs - as of today, the most widely studied IBSC technology - , there exist fast thermal carrier exchange between the IB and the conduction band (CB), for two reasons: (1) a narrow (< 0.2 eV) energy gap between the IB and the CB, EL, and (2) the existence of multiple electronic levels between them. Reason (1) also implies that maximum achievable efficiency is below the theoretical limit for the ideal IBSC, in which EL = 0.71 eV. In this context, our work focuses on the study of wide-bandgap QD-IBSCs. We have fabricated and experimentally investigated the first QD-IBSC prototypes in which AlGaAs or InGaP is the host material for the InAs QDs. We demonstrate an improved bandgap distribution, compared to the InAs/GaAs case, in our wide-bandgap devices. In particular, we have measured values of EL higher than 0.4 eV. In the case of the AlGaAs prototypes, the increase in EL comes with an increase of more than 100 meV of the activation energy of the thermal carrier escape. In addition, in our InAs/AlGaAs devices, we demonstrate voltage up-conversion; i. e., the production of an open-circuit voltage larger than the photon energy (divided by the electron charge) of the incident monochromatic beam, and the achievement of voltage preservation at room temperature under concentrated white-light illumination. We also analyze the potential of an IB material for infrared detection. We present a IB-based new concept of infrared photodetector that we have called the optically triggered infrared photodetector (OTIP). Our novel device is based on a new physical principle that allows the detection of infrared light to be switched ON and OFF by means of an external light. We have fabricated an OTIP based on InAs/AlGaAs QDs with which we demonstrate normal incidence photodetection in the 2-6 /xm range optically triggered by a 590 nm light-emitting diode. The theoretical study of the IB-assisted detection mechanism in the OTIP leads us to questioning the assumption of flat quasi-Fermi levels in the space-charge region of a solar cell. Based on device simulations, we prove and explain why this assumption is not valid under short-circuit and illumination conditions. We perform new experimental studies on InAs/GaAs QD-IBSC prototypes in order to gain knowledge on yet unexplored aspects of the performance of these devices. Specifically, we analyze the impact of the use of field-damping layers, and demonstrate this technique to be efficient for avoiding tunnel carrier escape from the QDs to the host material. We analyze the relationship between tunnel escape and voltage preservation, and propose voltage-dependent quantum efficiency measurements as an useful technique for assessing the tunneling-related limitation to the voltage preservation of QD-IBSC prototypes. Moreover, we perform temperature-dependent luminescence studies on InAs/GaAs samples and verify that the results are consistent with a split of the quasi-Fermi levels for the CB and the IB at low temperature. In order to contribute to the fabrication and characterization capabilities of the Solar Energy Institute of the Universidad Polite´cnica de Madrid (IES-UPM), we have participated in the installation and start-up of an molecular beam epitaxy (MBE) reactor and the development of a photo and electroluminescence characterization set-up. Using the MBE reactor, we have manufactured and characterized the first QD-IBSC fully fabricated at the IES-UPM.

Optical absorption and applications of the ABO4 (A=Ca, Pb and B= Mo, W) semiconductors

Ternary molybdates and tungstates ABO4 (A=Ca, Pb and B= Mo, W) are a group of materials that could be used for a variety of optoelectronic applications. We present a study of the optoelectronic properties based on first-principles using several orbitaldependent one-electron potentials applied to several orbital subspaces. The optical properties are split into chemical-species contributions in order to quantify the microscopic contributions. Furthermore, the effect of using several one-electron potentials and orbital subspaces is analyzed. From the results, the larger contribution to the optical absorption comes from the B-O transitions. The possible use as multi-gap solar cell absorbents is analyzed.

Optimization and evaluation in space conditions of multi-GHz optical modulators

Among the different optical modulator technologies available such as polymer, III-V semiconductors, Silicon, the well-known Lithium Niobate (LN) offers the best trade-off in terms of performances, ease of use, and power handling capability [1-9]. The LN technology is still widely deployed within the current high data rate fibre optic communications networks. This technology is also the most mature and guarantees the reliability which is required for space applications [9].In or der to fulfil the target specifications of opto-microwave payloads, an optimization of the design of a Mach-Zehnder (MZ) modulator working at the 1500nm telecom wavelength was performed in the frame of the ESA-ARTES "Multi GigaHertz Optical Modulator" (MGOM) project in order to reach ultra-low optical insertion loss and low effective driving voltage in the Ka band. The selected modulator configuration was the X-cut crystal orientation, associated to high stability Titanium in-diffusion process for the optical waveguide. Starting from an initial modulator configuration exhibiting 9 V drive voltage @ 30 GHz, a complete redesign of the coplanar microwave electrodes was carried out in order to reach a 6 V drive voltage @ 30GHz version. This redesign was associated to an optimization of the interaction between the optical waveguide and the electrodes. Following the optimisation steps, an evaluation program was applied on a lot of 8 identical modulators. A full characterisation was carried out to compare performances, showing small variations between the initial and final functional characteristics. In parallel, two similar modulators were submitted to both gamma (10-100 krad) and proton irradiation (10.109 p/cm²) with minor performance degradation.

Analysis of signal impairment and crosstalk penalty induced by different types of optical filters in 100 Gbps PM-DQPSK based systems

Optical filters are crucial elements in optical communication networks. Their influence toward the optical signal will affect the communication quality seriously. In this paper we will study and simulate the optical signal impairment and crosstalk penalty caused by different kinds of filters, which include Butterworth, Bessel, Fiber Bragg Grating (FBG) and Fabry-Perot (F-P). Signal impairment from filter concatenation effect and crosstalk penalty from out-band and in-band are analyzed from Q-penalty, eye opening penalty (EOP) and optical spectrum. The simulation results show that signal impairment and crosstalk penalty induced by the Butterworth filter is the minimum among these four types of filters. Signal impairment caused by filter concatenation effect shows that when center frequency of all filters is aligned perfectly with the laser's frequency, 12 50-GHz Butterworth filters can be cascaded, with 1-dB EOP. This value is reduced to 9 when the center frequency is misaligned with 5 GHz. In the 50-GHz channel spacing DWDM networks, total Q-penalty induced by a pair of Butterworth filters based demultiplexer and multiplexer is lower than 0.5 dB when the filter bandwidth is in the range of 42-46 GHz.

Ground and airborne level optical sensors: is it possible to estimate maize crop N status?

Adjusting N fertilizer application to crop requirements is a key issue to improve fertilizer efficiency, reducing unnecessary input costs to farmers and N environmental impact. Among the multiple soil and crop tests developed, optical sensors that detect crop N nutritional status may have a large potential to adjust N fertilizer recommendation (Samborski et al. 2009). Optical readings are rapid to take and non-destructive, they can be efficiently processed and combined to obtain indexes or indicators of crop status. However, other physiological stress conditions may interfere with the readings and detection of the best crop nutritional status indicators is not always and easy task. Comparison of different equipments and technologies might help to identify strengths and weakness of the application of optical sensors for N fertilizer recommendation. The aim of this study was to evaluate the potential of various ground-level optical sensors and narrow-band indices obtained from airborne hyperspectral images as tools for maize N fertilizer recommendations. Specific objectives were i) to determine which indices could detect differences in maize plants treated with different N fertilizer rates, and ii) to evaluate its ability to identify N-responsive from non-responsive sites.

Demonstration of the operation principles of intermediate band solar cells at room temperature

In this work we report, for the first time at room temperature, experimental results that prove, simultaneously in the same device, the two main physical principles involved in the operation of intermediate band solar cells: (1) the production of sub-bandgap photocurrent by two optical transitions through the intermediate band; (2) the generation of an output voltage which is not limited by the photon energy absorption threshold. These principles, which had always required cryogenic temperatures to be evidenced all together, are now demonstrated at room temperature on an intermediate band solar cell based on InAs quantum dots with Al0.3Ga0.7As barriers.

Optical properties of ZnMgO films grown by spray pyrolysis and their application to UV photodetection

This work presents a comprehensive optical characterization of Zn1−xMgxO thin films grown by spray pyrolysis (SP). Absorption measurements show the high potential of this technique to tune the bandgap from 3.30 to 4.11 eV by changing the Mg acetate content in the precursor solution, leading to a change of the Mg-content ranging from 0 up to 35%, as measured by transmission electron microscopy-energy dispersive x-ray spectroscopy. The optical emission of the films obtained by cathodoluminescence and photoluminescence spectroscopy shows a blue shift of the peak position from 3.26 to 3.89 eV with increasing Mg incorporation, with a clear excitonic contribution even at high Mg contents. The linewidth broadening of the absorption and emission spectra as well as the magnitude of the observed Stokes shift are found to significantly increase with the Mg content. This is shown to be related to both potential fluctuations induced by pure statistical alloy disorder and the presence of a tail of band states, the latter dominating for medium Mg contents. Finally, metal–semiconductor–metal photodiodes were fabricated showing a high sensitivity and a blue shift in the cut-off energy from 3.32 to 4.02 eV, i.e., down to 308 nm. The photodiodes present large UV/dark contrast ratios (102 − 107), indicating the viability of SP as a growth technique to fabricate low cost (Zn, Mg)O-based UV photodetectors reaching short wavelengths.

Long-term potentiation activates the GAP-43 promoter: Selective participation of hippocampal mossy cells

Perforant path long-term potentiation (LTP) in intact mouse hippocampal dentate gyrus increased the neuron-specific, growth-associated protein GAP-43 mRNA in hilar cells 3 days after tetanus, but surprisingly not in granule cells, the perforant path target. This increase was positively correlated with level of enhancement and restricted to central hilar cells on the side of stimulation. Blockade of LTP by puffing dl-aminophosphonovalerate (APV), an N-methyl-d-aspartate (NMDA) receptor blocker into the molecular layer, eliminated LTP-induced GAP-43 mRNA elevation in hilar cells. To determine whether the mRNA elevation was mediated by transcription, LTP was studied in transgenic mice bearing a GAP-43 promoter-lacZ reporter gene. Promoter activity as indexed by Transgene expression (PATE) increased as indicated by blue staining of the lacZ gene product, β-galactosidase. Potentiation induced a blue band bilaterally in the inner molecular layer of the dentate gyrus along the entire septotemporal axis. Because mossy cells are the only neurons in the central hilar zone that project to the inner molecular layer bilaterally along the entire septotemporal axis and LTP-induced activation of PATE in this zone was confined to the side of stimulation, we concluded that mossy cells were unilaterally activated, increasing synthesis of β-galactosidase, which was transported bilaterally. Neither granule cells nor pyramidal cells demonstrated increased PATE or increased GAP-43 mRNA levels. These results and recent evidence indicating the necessity of hilar neurons for LTP point to previously unheralded mossy cells as potentially critical for perforant path LTP and the GAP-43 in these cells as important for LTP persistence lasting days.

Optical and ultraviolet observations of a strong flare in the young, single K2 dwarf LQ Hya

We present high-resolution optical echelle spectra and IUE observations during a strong flare on 1993 December 22 in the very active, young, rapidly rotating, single K2 dwarf LQ Hya. The initial impulsive phase of the flare, which started sometime between 2:42 ut and 4:07 ut, was characterized by strong optical continuum enhancement and blueshifted emission lines with broad wings. The optical chromospheric lines reached their maximum intensity at ≈ 5:31 ut, by which time the blueshift vanished and the optical continuum enhancement had sharply decreased. Thereafter, the line emission slowly decreased and the lines redshift in a gradual phase that lasted at least two more hours. The Mg II lines behaved similarly. Quiescent C IV flux levels were not recovered until 21 h later, though a data gap and a possible second flare make the interpretation uncertain. In addition to the typically flare-enhanced emission lines (e.g., H α and H β), we observe He I D_3 going into emission, plus excess emission (after subtraction of the quiescent spectrum) in other He I and several strong neutral metal lines (e.g., Mg I b). Flare enhancement of the far-ultraviolet continuum generally agrees with an Si I recombination model. We estimate the total flare energy, and discuss the broad components, asymmetries and Doppler shifts seen in some of the emission lines.

On the forbidden gap of finite graphene nanoribbons

The electronic structure of isolated finite graphene nanoribbons is investigated by solving, at the Hartree-Fock (HF) level, the Pariser, Parr and Pople (PPP) many-body Hamiltonian. The study is mainly focused on 7-AGNR and 13-AGNR (Armchair Graphene Nano-Ribbons), whose electronic structures have been recently experimentally investigated. Only paramagnetic solutions are considered. The characteristics of the forbidden gap are studied as a function of the ribbon length. For a 7-AGNR, the gap monotonically decreases from a maximum value of ~6.5 eV for short nanoribbons to a very small value of ~0.12 eV for the longer calculated systems. Gap edges are defined by molecular orbitals that are spatially localized near the nanoribbon extremes, that is, near both zig-zag edges. On the other hand, two delocalized orbitals define a much larger gap of about 5 eV. Conductance measurements report a somewhat smaller gap of ~3 eV. The small real gap lies in the middle of the one given by extended states and has been observed by STM and reproduced by DFT calculations. On the other hand, the length dependence of the gap is not monotonous for a 13-AGNR. It decreases initially but sharply increases for lengths beyond 30 Å remaining almost constant thereafter at a value of ~2.1 eV. Two additional states localized at the nanoribbon extremes show up at energies 0.31 eV below the HOMO (Highest Occupied Molecular Orbital) and above the LUMO (Lowest Unoccupied Molecular Orbital). These numbers compare favorably with those recently obtained by means of STS for a 13-AGNR sustained by a gold surface, namely 1.4 eV for the energy gap and 0.4 eV for the position of localized band edges. We show that the important differences between 7- and 13-AGNR should be ascribed to the charge rearrangement near the zig-zag edges obtained in our calculations for ribbons longer than 30 Å, a feature that does not show up for a 7-AGNR no matter its length.