Intermediate band solar energy conversion in ZnTeO
Data(s) |
2013
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Resumo |
Energy conversion in solar cells incorporating ZnTeO base layers is presented. The ZnTeO base layers incorporate intermediate electronic states located approximately 0.4eV below the conduction band edge as a result of the substitution of O in Te sites in the ZnTe lattice. Cells with ZnTeO base layers demonstrate optical response at energies lower than the ZnTe bandedge, a feature that is absent in reference cells with ZnTe base layers. Quantum efficiency is significantly improved with the incorporation of ZnSe emitter/window layers and transition from growth on GaAs substrates to GaSb substrates with a near lattice match to ZnTe. |
Formato |
application/pdf |
Identificador | |
Idioma(s) |
eng |
Publicador |
E.T.S.I. Telecomunicación (UPM) |
Relação |
http://oa.upm.es/26764/1/INVE_MEM_2013_165252.pdf http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=6744459&tag=1 info:eu-repo/semantics/altIdentifier/doi/null |
Direitos |
http://creativecommons.org/licenses/by-nc-nd/3.0/es/ info:eu-repo/semantics/openAccess |
Fonte |
39th Photovoltaic Specialists Conference (PVSC) | 39th Photovoltaic Specialists Conference (PVSC) | 16/06/2013 - 21/06/2013 | Tampa, Florida, EE.UU. |
Palavras-Chave | #Telecomunicaciones #Electrónica #Física |
Tipo |
info:eu-repo/semantics/conferenceObject Ponencia en Congreso o Jornada PeerReviewed |