Characterization of deep levels in Pt-GaN Schottky diodes deposited on intermediate-temperature buffer layers

Gallium nitride (GaN)-based Schottky junctions were fabricated by RF-plasma-assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were deposited on novel double buffer layers that consist of a conventional low-temperature buffer layer (LTBL) grown at 500 degreesC and an intermediate-temperature buffer layer (ITBL) deposited at 690 degreesC. Low-frequency excess noise and deep level transient Fourier spectroscopy (DLTFS) were measured from the devices. The results demonstrate a significant reduction in the density of deep levels in the devices fabricated with the GaN films grown with an ITBL. Compared to the control sample, which was grown with just a conventional LTBL, a three-order-of-magnitude reduction in the deep levels 0.4 eV below the conduction band minimum (Ec) is observed in the bulk of the thin films using DLTFS measurements.

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690 degreesC, and a conventional low-temperature buffer layer deposited at 500 degreesC. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm(2)V(-1)S(-1) for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at E-c-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 mum in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films. (C) 2002 Elsevier Science BN. All rights reserved.

Electrical manifestation of the quantum-confined Stark effect by quantum capacitance response in an optically excited quantum well

We have studied the capacitance-voltage characteristics of an optically excited wide quantum well. Both self-consistent simulations and experimental results show the striking quantum contribution to the capacitance near zero bias which is ascribed to the swift decreasing of the overlap between the electron and hole wave functions in the well as the longitudinal field goes up. This quantum capacitance feature is regarded as an electrical manifestation of the quantum-confined Stark effect.

Suppression of sequential tunneling current by a perpendicular magnetic field in a three-barrier, two-well heterostructure

When an intersubband relaxation is involved in vertical transport in a tunneling heterostructure, the magnetic suppression of the intersubband LO or LA phonon scattering may also give rise to a noticeable depression of the resonant tunneling current, unrelated to the Coulomb correlation effect. The slowdown of the intersubband scattering rate makes fewer electrons able to tunnel resonantly between two adjacent quantum wells (QWs) in a three-barrier, two-well heterostructure. The influence of the magnetic field on the intersubband relaxation can be studied in an explicit way by a physical model based on the dynamics of carrier populations in the ground and excited subbands of the incident QW. (C) 1998 American Institute of Physics. [S0003-6951(98)00925-5].

practical type checking of functions defined on context-free languages

A type checking method for the functional language LFC is presented. A distinct feature of LFC is that it uses Context-Free (CF) languages as data types to represent compound data structures. This makes LFC a dynamically typed language. To improve efficiency, a practical type checking method is presented, which consists of both static and dynamic type checking. Although the inclusion relation of CF.languages is not decidable,a special subset of the relation is decidable, i.e., the sentential form relation, which can be statically checked.Moreover, most of the expressions in actual LFC programs appear to satisfy this relation according to the statistic data of experiments. So, despite that the static type checking is not complete, it undertakes most of the type checking task. Consequently the run-time efficiency is effectively improved. Another feature of the type checking is that it converts the expressions with implicit structures to structured representation. Structure reconstruction technique is presented.

Resonance-enhanced group delay times in an asymmetric single quantum barrier

It is shown that transmission and reflection group delay times in an asymmetric single quantum barrier are greatly enhanced by the transmission resonance when the energy of incident particles is larger than the height of the barrier. The resonant transmission group delay is of the order of the quasibound state lifetime in the barrier region. The reflection group delay can be either positive or negative, depending on the relative height of the potential energies on the two sides of the barrier. Its magnitude is much larger than the quasibound state lifetime. These predictions have been observed in microwave experiments. (c) 2005 Elsevier B.V. All rights reserved.

Experimental observation of negative lateral displacements of microwave beams transmitting through dielectric slabs

It was theoretically predicted that when a beam of light travels through a thin slab of optically denser medium in the air, the emerging beam from the slab will suffer a lateral displacement that is different from the prediction of geometrical optics, that is, the Snell's law of refraction and can be zero and negative as well as positive. These phenomena have been directly observed in microwave experiments in which large angles of incidence are chosen for the purpose of obtaining negative lateral displacements. (C) 2005 Elsevier B.V. All rights reserved.

Negative lateral shift of a light beam transmitted through a dielectric slab and interaction of boundary effects

It is found that when a light beam travels through a slab of optically denser dielectric medium in air, the lateral shift of the transmitted beam can be negative. This is a novel phenomenon that is reversed in comparison with the geometrical optic prediction according to Snell's law of refraction. A Gaussian-shaped beam is analyzed in the paraxial approximation, and a comparison with numerical simulations is made. Finally, an explanation for the negativity of the lateral shift is suggested, in terms of the interaction of boundary effects of the slab's two interfaces with air.

Lateral shift of the transmitted light beam through a left-handed slab

It is reported that when a light beam travels through a slab of left-handed medium in the air, the lateral shift of the transmitted beam can be negative as well as positive. The necessary condition for the lateral shift to be positive is given. The validity of the stationary-phase approach is demonstrated by numerical simulations for a Gaussian-shaped beam. A restriction to the slab's thickness is provided that is necessary for the beam to retain its profile in the traveling. It is shown that the lateral shift of the reflected beam is equal to that of the transmitted beam in the symmetric configuration.

Prediction of simultaneously large and opposite generalized Goos-Hanchen shifts for TE and TM light beams in an asymmetric double-prism configuration

It is predicted that large and opposite generalized Goos-Hanchen (GGH) shifts may occur simultaneously for TE and TM light beams upon reflection from an asymmetric double-prism configuration when the angle of incidence is below but near the critical angle for total reflection, which may lead to interesting applications in optical devices and integrated optics. Numerical simulations show that the magnitude of the GGH shift can be of the order of beam's width.

黄土丘陵区免耕条件下两种土壤酶活性变化

为了确定合理环保的耕作制度,2007~2008安塞田间定位试验黄土丘陵旱作农区大豆(Glycine maxL)、玉米(Zea maysL)、红小豆(Semen Phaseoli)、马铃薯(Solanum tuberosumLinn.)在翻耕化肥(CF)、翻耕有机肥(CM)、翻耕无肥(CN)、免耕化肥(NF)、免耕有机肥(NM)、免耕无肥(NN)等水平下的农田土壤脲酶、蔗糖酶活性。结果表明:在作物花期,大豆、玉米土壤脲酶活性较高,蔗糖酶活性较低,而红小豆、马铃薯则与之相反,差异极显著。到作物收获后,玉米土壤脲酶、蔗糖酶活性增高,增幅在83%以上,而马铃薯、红小豆、大豆三种作物土壤脲酶活性降低,降幅在10%以上,蔗糖酶活性增强,增幅在40%以上。从花期到收获后,免耕降低了土壤脲酶活性,提高了土壤蔗糖酶活性,在黄土丘陵沟壑旱作农区两种土壤酶活性表现较优的作物为大豆、玉米,较优的处理为NM玉米、NF大豆,其田间环保效应为:作物生长期间两种酶活性比较高,收获后两种酶活性则降低,有利于提高作物生长期土壤肥效利用率,减少作物收获后温室气体的排放。

陕北黄土丘陵沟壑区水土保持耕作及施肥下农田土壤种子库特征

为了探明多年免耕下农田恶性杂草发生的机理,提高保护性耕作下作物对农田恶性杂草持久稳定的抑制效果,依据陕西安塞田间4a的定位试验,采用小区调查取样和室内实验相结合的方法,从物种组成、密度特征、多样性以及相似性特征等方面,研究了黄土丘陵旱作农区大豆(Glycine max)、玉米(Zea mays)、红小豆(Semen Phaseoli)、马铃薯(Solanum tuberosum)在翻耕化肥(CF)、翻耕有机肥(CM)、翻耕无肥(CN)、免耕化肥(NF)、免耕有机肥(NM)、免耕无肥(NN)等水平下的农田土壤种子库。结果表明:(1)4种作物24种土样中共萌发出12个物种1965株幼苗,隶属于7科12属。1年生杂草占94%,棒头草(fugax nees ex steud)、苋菜(Acalypha australis)、马唐(Digitaria sanguinalis)、早熟禾(Poasphondylodes)为优势种,占87%。(2)在0～20cm土层不同处理间,土壤种子库的密度变动于(282.9±63.4)～(7482.5±1078.3)粒.m-2,其中,红小豆小区>马铃薯小区>大豆小区>玉米小区;翻耕小区>免...

水土保持耕作及施肥对盛花期大豆光合生理的影响

依据陕西安塞田间试验,采用LI-6400便携式光合仪,在自然条件下对黄土丘陵区旱作农田传统翻耕化肥(CF)、翻耕有机肥(CM)、翻耕无肥(CN)、免耕化肥(NF)、免耕有机肥(NM)、免耕无肥(NN)等处理下盛花期大豆叶片的净光合速率、气孔导度、水分利用效率及影响因子日变化进行了研究。结果表明:6种不同处理的大豆叶片净光合速率日变化均为双峰曲线,峰值分别在11:30、16:00出现。NM、NF处理对提高大豆净光合速率有明显的促进作用,其中以有机肥(NM)最为显著。气孔导度与蒸腾速率之间达极显著正相关(P<0.01,r=0.9994)。气孔导度日变化也为双峰,峰值分别出现在11:30、16:00。不同处理下,大豆的水分利用效率呈单峰曲线,峰值出现在10:00,低谷出现在13:00以后。其中,NF、NM处理能显著提高大豆盛花期的水分利用效率。相关分析表明:气孔导度、蒸腾速率、叶温、光合有效辐射及基于叶温的蒸汽压亏缺是大豆光合作用的促进因子,而胞间CO_2浓度、空气CO_2浓度、空气相对湿度则为主要的限制因子。CF���NF处理在8:30~10:20和13:00,CM、NN处理在8:30、11:30~13:00、17:...

不同培肥措施下种植制度及撂荒对土壤微生物量碳氮的影响

以黄土高原南部半湿润易旱区已进行17年的田间定位试验为研究对象,研究了不同培肥措施(不施肥、施用氮磷钾及氮磷钾与有机肥配合施用)下两种种植制度(一年1熟及一年两熟)和撂荒对土壤微生物量碳、氮(SMBC、SMBN)及可溶性有机碳、氮(SOC、SON)等含量的影响。结果表明,与一年1熟的小麦-休闲种植制度相比,一年两熟小麦-玉米轮作提高了0~10cm土层SMBC、SMBN、有机碳(TOC)、全氮(TN)和土壤SOC、SON的含量,而对10~20cm土层上述测定指标影响不大。与不施肥(CK)或单施化肥处理(NPK)下小麦-休闲和小麦-玉米轮作方式相比,撂荒处理显著提高了0~10cm土层各测定指标的含量。不同培肥措施相比,氮磷钾配施有机肥显著提高了0~10cm、10~20cm土层SMBC、SMBN含量;NPK处理0~10cm土层SMBN含量显著增加,10~20cm土层SMBN和0~10cm、10~20cm土层SMBC含量增加但未达显著水平。不同培肥措施和种植制度对SMBC/TOC和SMBN/TN的比例无明显影响。