Optical and electrical properties of TiOx thin films deposited by electron beam evaporation

The TiOx thin films were prepared by electron beam evaporation using TiO as the starting material. The effect of the annealing temperature on the optical and electrical properties was investigated. The spectra of X-ray photoelectron spectroscopy reveal that Ti in the films mainly exist in the forms of Ti2+ and Ti3+ below 400 degrees C 24h annealing. The charge transfer between different titanium ion contribute greatly to the color, absorption, and electrical resistance of the films. (c) 2006 Elsevier Ltd. All rights reserved.

Effects of crystalline quality on the phase stability of cubic boron nitride thin films under medium-energy ion irradiation

To investigate the effect of radiation damage on the stability and the compressive stress of cubic boron nitride (c-BN) thin films, c-BN films with various crystalline qualities prepared by dual beam ion assisted deposition were irradiated at room temperature with 300 keV Ar+ ions over a large fluence range up to 2 x 10(16) cm(-2). Fourier transform infrared spectroscopy (FTIR) data were taken before and after each irradiation step. The results show that the c-BN films with high crystallinity are significantly more resistant against medium-energy bombardment than those of lower crystalline quality. However, even for pure c-BN films without any sp(2)-bonded BN, there is a mechanism present, which causes the transformation from pure c-BN to h-BN or to an amorphous BN phase. Additional high resolution transmission electron microscopy (HRTEM) results support the conclusion from the FTIR data. For c-BN films with thickness smaller than the projected range of the bombarding Ar ions, complete stress relaxation was found for ion fluences approaching 4 x 10(15) cm(-2). This relaxation is accompanied, however, by a significant increase of the width of c-BN FTIR TO-line. This observation points to a build-up of disorder and/or a decreasing average grain size due to the bombardment. (c) 2005 Elsevier B.V. All rights reserved.

Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy

The effect of ion-induced damage on GaNAs/GaAs quantum wells (QWs) grown by molecular beam epitaxy employing a DC plasma as the N source was investigated. Ion-induced damage results in: (i) an observed disappearance of pendellosung fringes in the X-ray diffraction pattern of the sample; (ii) a drastic decrease in intensity and a broadening in the full-width at half-maximum of photoluminescence spectra. It was shown that ion-induced damage strongly affected the bandedge potential fluctuations of the QWs. The bandedge potential fluctuations for the samples grown with and without ion removal magnets (IRMs) are 44 and 63 meV, respectively. It was found that the N-As atomic interdiffusion at the interfaces of the QWs was enhanced by the ion damage-induced defects. The estimated activation energies of the N-As atomic interdiffusion for the samples grown with and without IRMs are 3.34 and 1.78 eV, respectively. (C) 2001 Elsevier Science B.V. All rights reserved.

Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy

We have studied the effect of rapid thermal annealing (RTA) on GaInNAs/GaAs quantum wells (QWs) grown by molecular-beam epitaxy using a dc plasma as the N source. It was found that RTA at low temperature (LT, 650 degrees C) and high temperature (HT, 900 degrees C) could both improve the QW quality significantly. To clarify the mechanism of quality improvement by RTA, a magnetic field perpendicular to the path of the N plasma flux was applied during the growth of the GaInNAs layers for the sake of comparison. It was found that LT-RTA mainly removed dislocations at interfaces related to the ion bombardment, whereas, HT-RTA further removed dislocations originating from the growth. LT-RTA caused only a slight blueshift of photoluminescence peak wavelength, probably due to defect-assisted interdiffusion of In-Ga at the QW interfaces. The blueshift caused by HT-RTA, on the other hand, was much larger. It is suggested that this is due to the fast defect-assisted diffusion of N-As at the QW interfaces. As defects are removed by annealing, the diffusion of In-Ga at interfaces would be predominant. (C) 2000 American Institute of Physics. [S0003- 6951(00)01535-7].

Characterization of strain relaxation in As ion implanted Si1-xGex epilayers grown by gas source molecular beam epitaxy

Strain relaxation in the As ion implanted Si0.57Ge0.43 epilayers was studied by double-crystal x-ray diffractometry and transmission electron microscopy, and was compared to that in the nonimplanted Si0.57Ge0.43 epilayers. Experimental results show that after rapid thermal annealing (RTA) the x-ray linewidth of the As+-implanted Si0.57Ge0.43 epilayers is narrower than that of the nonimplanted epilayers, and than that of the partially relaxed as-grown samples, which is due primarily to low density of misfit dislocations in the As+-implanted SiGe epilayers. RTA at higher than 950 degrees C results in the formation of misfit dislocations for the nonimplanted structures, and of combinations of dislocations and precipitates (tentatively identified as GeAs) for the As+-implanted epilayers. The results mean that the strain relaxation mechanism of the As+-implanted Si1-xGex epilayers may be different from that of the nonimplanted Si1-xGex epilayers. (C) 1998 American Institute of Physics.

Effect of entrance-channel asymmetry on the isospin dependence of nucleon emission in heavy ion collisions

Using the isospin- and momentum-dependent hadronic transport model 1BUU04, we have investigated the influence of the entrance-channel isospin asymmetry on the sensitivity of the pre-equilibrium neutron/proton ratio to symmetry energy in central heavy-ion collisions induced by high-energy radioactive beams. Our analysis and discussion are based on the dynamical simulations of the three isotopic reaction Systems Sn-132+Sn-124, Sn-124+Sn-112 and Sn-112+(112)Su which are of the same total proton number but, different isospin asymmetry. We find that, the kinetic-energy distributions of the pre-equilibrium neutron/proton ratio are quite sensitive to the density-dependence of symmetry energy at incident beam energy E/A = 400 MeV, and the sensitivity increases as the isospin asymmetry of the reaction system increases.

Structural modification of C-doped SiO2 induced by swift heavy ion irradiations

Thermally grown amorphous SiO2 samples were implanted at room temperature (RT) with 120 keV C-ions to a dose ranging from 1.0 x 10(16) to 8.6 x 10(17)C ions/cm(2), then irradiated at RT with 950 MeV Pb, 345 or 1754 MeV Xe ions to a fluence in the region from 1.0 x 10(11) to 3.8 x 10(12) ions/cm(2), respectively. The irradiated samples were investigated using micro-FTIR and micro-Raman spectroscopes. It was found that new chemical bonds such as Si-C, C=C(O), C C and Si(C)-O-C bonds formed significantly in the C-doped SiO2 films after heavy ion irradiations. The evolution of Si-O-C bonds and possible mechanism of structural modification in C-doped SiO2 induced by swift heavy ion irradiations were discussed.

Germ cell loss induced by C-12(6+) ion irradiation in young female mice

The ovaries of Kun-Ming strain mice (3 weeks) were irradiated with different doses of C-12(6+) ion in the Bragg peak or the plateau region. At 10th day after irradiation, ovarian and uterine weights were measured: normal and atretic (identified with the oocyte to be degenerating or absent) primordial, primary and preantral follicles were identified in the largest cross-section of each ovary. Percentage (%) of normal follicles of each developmental stage of oogenesis was calculated. The data showed that compared to controls, there was a dose-related decrease in percentage of normal follicles in each developmental stage. And the weights of ovary and uterus were also reduced with doses of irradiation. Moreover, these effects were much more significant in the Bragg peak region and the region close to the Bragg peak than in the beam's entrance (the plateau region). Radiosensitivity varied in different follicle maturation stages. Primordial follicles, which are thought to be extremely sensitive to ionizing irradiation, were reduced by 86.6%, while primary and preantral follicles reduced only by 72.5% and 61.8% respectively, by exposure with 6 Gy of C-12(6+) ion in the Bragg peak region and the region close to the Bragg peak. The data suggested that due to their optimal depth-dose distribution in the Bragg peak region, heavy ions are ones of the best particles for radiotherapy of tumors located next of vital organs or/and surrounded by normal tissues, especially radiosensitive tissues such as gonads.

Probe beam deflection study on electrochemically controlled release of 5-fluorouracil

In this paper, the polypyrrole (PPy) film modified electrodes are used as an electroreleasing reservoir. The electrochemically controlled release of 5-fluorouracil (5-FU) from a PPy film modified electrode to aqueous electrolytes is studied by the in situ probe beam deflection (PBD) method combined with cyclic voltammetry (CV) and chronoamperometry (CA). The PBD results reveal that the release of 5-FU from PPy film depends on the electrochemical redox process of the PPy film electrode. The released amount is controlled by the reduction potential and is proportional to the thickness of the film. The exchange of 5-FU anions with Cl- on an open circuit is slow on the time scale of minutes, but the release of 5-FU anions can proceed quickly at -0.6 V (vs Ag/AgCl). The amount of released 5-FU decreases with the time that the PPy film is soaked in aqueous solution. (C) 1998 Elsevier Science Ltd. All rights reserved.

Probe beam deflection combined with cyclic voltammetry studies of C-60-modified electrode film

C-60 films, prepared by solution casting, were studied by means of in situ probe beam deflection (PBD) combined with cyclic voltammetry (CV). PBD is a powerful technique for investigation of phenomena at the electrode/electrolyte interface in acetonitrile with quaternary ammonium and alkali metal salts as supporting electrolytes. In tetra-n-butylammonium (TBA(+)) salt solution, a stable CV can be obtained during the first two reduction/reoxidation waves. On reduction, injection of cations to maintain charge balance and dissolution of small amount of C-60(-) (TEA(+)) and/or C-60(2-) (TBA(+))(2) are detected. During the reoxidation process ejection of cations and injection of anions occur simultaneously, especially for the second reoxidation wave. In the case where TBABr is the supporting electrolyte, the accompanied behavior is more complicated than in TBABF(4), TBAClO(4), and TBAPF(6) solutions. A small pair of prewaves in CV are proposed due to oxidation/reduction of C-60 domains but not dissolution/redeposition of C-60 film. Extending the potential scan range to the third reduction wave, no apparent corresponding reoxidation wave is related to the third reduction wave, the electroactivity of the film disappears rapidly and dissolution of C-60 film is observed. In tetraethylammonium (TEA(+)) and NAClO(4) solutions, the electrochemistry of the C-60 films is unstable, and potential scans lead to dissolution of flaking of the film.