960 resultados para Stomatal conductance


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依据在陕西安塞进行的田间试验,研究了黄土丘陵旱农区传统翻耕和免耕及化肥和有机肥对玉米光合速率和气孔导度的影响。结果表明,免耕措施下玉米的光合速率、气孔导度、水分利用效率均高于传统翻耕,气孔导度的日变化与光合速率显著相关。在黄土丘陵区实施免耕既有利于作物对有限降水的高效利用,提高作物产量,也可促进农田系统生产力可持续提高。

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田间试验研究不施N和施N(90kg/hm2)条件下“NR9405”、“9430”、“偃师9号”、“小偃6号”、“陕229”、“西农2208”、“矮丰3号”和“商188”等8种不同基因型冬小麦中后期生理特性及其叶片形态的差异结果表明,抽穗期倒二叶和灌浆期旗叶的净光合速率、气孔导度、蒸腾速率及瞬时水分利用效率在不同基因型间存在显著差异,施N仅能显著降低抽穗期倒二叶的蒸腾速率,而对功能叶的其他生理指标无明显影响。小麦成熟期旗叶和倒二叶的长度、宽度及叶面积在不同基因型间也存在极显著差异,施N对这些叶片形态指标有极显著地促进作用,基因型和N肥同时影响灌浆期旗叶的SPAD值,而叶片衰老指数主要受基因型调控。总体上看,冬小麦叶片形态指标同时受施N和基因型影响,而生理指标主要受基因型影响,N肥的影响相对较小。

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The study on the response of a mutant and a wild type of Arabidopsis to 660 μl·L -1 CO 2 and ambient CO 2 showed that under elevated CO 2,the stomatal numbers of the mutant increased,while those of the wild type decreased. The chlorophyll content and NR (nitrate reductase) activity of the mutant increased,but those of the wild type had no obvious response. The mutant was not reproductively mature after the continuous exposure to increased CO 2 for five months. The results provided evidence of plant response to the changes of atmospheric CO 2 concentration,and the clues to related studies on other plants.

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Negative differential resistance (NDR) and memory phenomenon have been realized in current-voltage (I-V) characteristics of indium tin oxide/tris(8-hydroxyquinoline) aluminum/aluminum devices. The I-V curves have been divided into three operational regions that are associated with different working regimes of the devices: (i) bistable region, (ii) NDR region, and (iii) monotonic region. The bistable region disappeared after a couple of voltage sweeps from zero to a positive voltage. The bistable nature can be reinstated by applying a suitable negative voltage.

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A ruthenium(II) bis(sigma-arylacetylide)-complex-based molecular wire functionalized with thiolacetyl alligator clips at both ends (OPERu) was used to fabricate gold substrate-molecular wire-conductive tip junctions. To elucidate the ruthenium-complex-enhanced charge transport, we conducted a single-molecule level investigation using the technique-combination method, where electronic delay constant, single-molecular conductance, and barrier height were obtained by scanning tunneling microscopy (STM) apparent height measurements, STM break junction measurements, and conductive probe-atomic force microscopy (CP-AFM) measurements, respectively.

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The charge transport mechanism of oligo(p-phenylene ethynylene)s with lengths ranging from 0.98 to 5.11 nm was investigated using modified scanning tunneling microscopy break junction and conducting probe atomic force microscopy methods. The methods were based on observing the length dependence of molecular resistance at single molecule level and the current-voltage characteristics in a wide length distribution. An intrinsic transition from tunneling to hopping charge transport mechanism was observed near 2.75 nm. A new transitional zone was observed in the long length molecular wires compared to short ones. This was not a simple transition between direct tunneling and field emission, which may provide new insights into transport mechanism investigations. Theoretical calculations provided an essential explanation for these phenomena in terms of molecular electronic structures.

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We investigated electrical properties of vanadyl phthalocyanine (VOPc) metal-insulator-semiconductor (MIS) devices by the measurement of capacitance and conductance, which were fabricated on ordered para-sexiphenyl (p-6P) layer by weak epitaxy growth method. The VOPc/p-6P MIS diodes showed a negligible hysteresis effect at a gate voltage of +/- 20 V and small hysteresis effect at a gate voltage of +/- 40 V due to the low interface trap state density of about 1x10(10) eV(-1) cm(-2). Furthermore, a high transition frequency of about 10 kHz was also observed under their accumulation mode. The results indicated that VOPc was a promising material and was suitable to be applied in active matrix liquid crystal displays and organic logic circuits.

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The tunnel junction of a gold nanogap was fabricated electrochemically for a molecular sensing device in solution. The tunnel junction was sensitive enough to detect the variation of a potential barrier within the nanogap, such as the chemical adsorption of molecules. By monitoring the variation of the tunneling current, which represents the change of a potential barrier due to molecular adsorption, the molecules could be detected.

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The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-bis-(9,9-diphenyl-9H-fluoren-2-yl)-anthracene (DPFA) sandwiched between Ag and indium tin oxide electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (on state) and a low conductance state (off state). It can be found that the currents at both on to off states are space-charge limited and attributed to the electron traps at the Ag/DPFA interface. The large and reproducible NDR makes the devices of tremendous potential in low power memory and logic circuits.

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Monodisperse oligo[(1,4-phenyleneethynylene)-alt-(2,5-thiopheneethynylene)]s, new candidates for molecular wires, were rapidly synthesized via an iterative divergent/convergent doubling strategy in solution as well as on Merrifield's resin.

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A facile, mild and rapid solid phase synthetic route free of column chromatographic purification to the synthesis of soluble monodisperse long-chain oligo(1,4-phenyleneethynylene)s is presented.

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Negative differential resistance ( NDR) and multilevel memory effects were obtained in organic devices consisting of an anthracene derivative, 9,10-bis-{ 9,9-di-[ 4-(phenyl-p-tolyl-amino)-phenyl]-9H-fluoren-2-yl}-anthracene ( DAFA), sandwiched between Ag and ITO electrodes. The application of a negative bias voltage leads to negative differential resistance in current-voltage characteristics and different negative voltages produce different conductance currents, resulting in the multilevel memory capability of the devices. The NDR property has been attributed to charge trapping at the DAFA/Ag interface. This opens up a wide range of application possibilities of such organic-based NDR devices in memory and logic circuits.

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In this paper, the fabrication method of a new type of carbon monoxide gas sensor based on SnOx with low power consumption and its sensing characteristics have been reported. The electric conductance of this type of sensor evolves oscillation form regularly when the sensor is exposed to low level of CO gas. The oscillation amplitude is directly proportional to the concentration of CO gas over a wide range. The effects of relevant factors. such as. humidity, temperature and interference gases on the sensor properties were examined. The sensing oscillation response mechanism was also discussed.

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Four lanthanide complexes with 2-nitro-5,10,15,20-tetraphenylporphyrin and acetylacetonate were prepared and characterized by elemental analyses, LR, UV-Visible,H-1 NMR, XPS and molar conductance. The redox properties of the lutetium complex with 2-nitro-5,10,15,20-tetraphenylporphyrin and acetylacetonate in dichloromethane were studied by cyclic voltammetry.