Selective and lithography-independent fabrication of 20 nm nano-gap electrodes and nano-channels for nanoelectrofluidics applications

A new method has been developed to selectively fabricate nano-gap electrodes and nano-channels by conventional lithography. Based on a sacrificial spacer process, we have successfully obtained sub-100-nm nano-gap electrodes and nano-channels and further reduced the dimensions to 20 nm by shrinking the sacrificial spacer size. Our method shows good selectivity between nano-gap electrodes and nano-channels due to different sacrificial spacer etch conditions. There is no length limit for the nano-gap electrode and the nano-channel. The method reported in this paper also allows for wafer scale fabrication, high throughput, low cost, and good compatibility with modern semiconductor technology.

SIMULATION OF LATERAL CONFINEMENT IN VERY NARROW CHANNELS

A theoretical study is presented of the lateral confinement potential (CP) in the very narrow mesa channels fabricated in the conventional two-dimensional (2D) electron gas in GaAs-AlxGa1-xAs heterostructures. The ID electronic structures are calculated in the framework of the confinement potential: V(x) = m* omega0(2)x2/2 for Absolute value of x

Influence of entrance channels on the formation of superheavy nuclei in massive fusion reactions

Within the framework of the dinuclear system (DNS) model, the production cross sections of superheavy nuclei Hs (Z=108) and Z=112 combined with different reaction systems are analyzed systematically. It is found that the mass asymmetries and the reaction Q values of the projectile target combinations play a very important role on the formation cross sections of the evaporation residues. Both methods to obtain the fusion probability by nucleon transfer by solving a set of microscopically derived master equations along the mass asymmetry degree of freedom (ID) and distinguishing protons and neutrons of fragments (2D) are compared with each other and also with the available experimental data. (C) 2010 Elsevier B.V. All rights reserved.