Structural and electrical properties of LaNiO3 thin films grown on (100) and (001) oriented SrLaAlO4 substrates by chemical solution deposition method

LaNiO3 thin films were deposited on SrLaAlO4 (1 0 0) and SrLaAlO4 (0 0 1) single crystal substrates by a chemical solution deposition method and heat-treated in oxygen atmosphere at 700° C in tube oven. Structural, morphological, and electrical properties of the LaNiO 3 thin films were characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FE-SEM), and electrical resistivity as temperature function (Hall measurements). The X-ray diffraction data indicated good crystallinity and a structural preferential orientation. The LaNiO3 thin films have a very flat surface and no droplet was found on their surfaces. Samples of LaNiO3 grown onto (1 0 0) and (0 0 1) oriented SrLaAlO4 single crystal substrates reveled average grain size by AFM approximately 15-30 nm and 20-35 nm, respectively. Transport characteristics observed were clearly dependent upon the substrate orientation which exhibited a metal-to-insulator transition. The underlying mechanism is a result of competition between the mobility edge and the Fermi energy through the occupation of electron states which in turn is controlled by the disorder level induced by different growth surfaces. © 2013 Elsevier Ltd and Techna Group S.r.l.

Aplicação do eletrocapilaridade na manipulação de microgotas

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Uma contribuição para o estudo do efeito causado pela névoa salina em isoladores cerâmicos de chaves fusíveis

Pós-graduação em Ciência e Tecnologia de Materiais - FC

Influência da salinidade do fluido na avaliação da compactação e da resistividade elétrica de dois solos

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Formação de filmes finos de Al2O3 por anodização e seu uso em dispositivos com filmes de Poli(3-Hexiltiofeno)

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Dinâmica do carbono em pequenas bacias de drenagem sob uso de agricultura familiar na Amazônia Oriental

O presente estudo teve como objetivo avaliar a dinâmica do carbono em uma região da Amazônia Oriental, cujo uso da terra predominante é a agricultura familiar; a unidade espacial adotada neste estudo foram três pequenas bacias de drenagem. A dinâmica do carbono foi avaliada a partir de medidas hidrológicas e biogeoquímicas em águas dos igarapés Cumaru, Pachibá e São João entre junho de 2006 a maio de 2007. O ambiente aquático e a hidrogeoquímica fluvial foram caracterizados a partir de medidas in situ da condutividade elétrica, temperatura, pH e concentração de oxigênio dissolvido. Amostras de água foram coletadas e analisadas para determinação do carbono orgânico dissolvido (COD) e pressão parcial do dióxido de carbono (pCO 2 ). A partir dos valores de pCO 2 , foram calculadas as concentrações de carbono inorgânico dissolvido (CID). Já os fluxos de C02 foram medidos in situ e também calculados a partir do pC0 2 . Utilizando-se medidas de vazão instantânea a cada campanha mensal de campo, calcularam-se fluxos anuais de COD. A caracterização dos solos e do uso da terra nas porções estudadas das bacias, assim como os índices pluviométricos e fluviométricos, foram considerados na interpretação dos resultados. Podem-se enumerar como principais resultados o seguinte: 1) As características físico-químicas das águas fluviais das bacias estudadas retrataram seus solos ácidos, a vegetação ripária, e processos hidrológicos biogeoquímicos no ambiente aquático e terrestre, e com certa variabilidade sazonal; 2)0 pH e o oxigênio dissolvido se correlacionaram positivamente com o carbono dissolvido na coluna d'água; 3) O transporte de COD por unidade de área foi elevado quando comparado com outras bacias amazônicas, e mais intenso em períodos chuvosos; 4) O transporte de COD e a evasão de C0 2 pareceram responder positivamente à presença de vegetação secundária e floresta densa, e negativamente às atividades agropecuárias; e 5) As taxas de evasão de C0 2 foram elevadas comparando-as a outros rios amazônicos, e corroboram a hipótese de que pequenas bacias são importante fontes de C0 2 para atmosfera na região.

Monitoramento do processo de densificação de compósitos termoestruturais de carbono reforçado com fibras de carbono por tomografia computadorizada e resistividade elétrica

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

Estudo das reações no sistema 'CU'-'AL'-'AG'-'MN'

Pós-graduação em Química - IQ

Analysis of the electrical characteristics and surge protection of EHV transmission lines supported by tall towers

Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)

28-mer fragment derived from enterocin CRL35 displays an unexpected bactericidal effect on listeria cells

Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)

Growth and Characterization of Silicon Carbide Thin Films Using a Nontraditional Hollow Cathode Sputtering Technique

Silicon carbide (SiC) is considered a suitable candidate for high-power, high-frequency devices due to its wide bandgap, high breakdown field, and high electron mobility. It also has the unique ability to synthesize graphene on its surface by subliming Si during an annealing stage. The deposition of SiC is most often carried out using chemical vapor deposition (CVD) techniques, but little research has been explored with respect to the sputtering of SiC. Investigations of the thin film depositions of SiC from pulse sputtering a hollow cathode SiC target are presented. Although there are many different polytypes of SiC, techniques are discussed that were used to identify the film polytype on both 4H-SiC substrates and Si substrates. Results are presented about the ability to incorporate Ge into the growing SiC films for the purpose of creating a possible heterojunction device with pure SiC. Efforts to synthesize graphene on these films are introduced and reasons for the inability to create it are discussed. Analysis mainly includes crystallographic and morphological studies about the deposited films and their quality using x-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), transmission electron microscopy (TEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), Auger electron spectroscopy (AES) and Raman spectroscopy. Optical and electrical properties are also discussed via ellipsometric modeling and resistivity measurements. The general interpretation of these analytical experiments indicates that the films are not single crystal. However, the majority of the films, which proved to be the 3C-SiC polytype, were grown in a highly ordered and highly textured manner on both (111) and (110) Si substrates.

Interstitial doping induced superconductivity at 15.3 K in Nb5Ge3 compound

It is reported superconductivity in Nb5Ge3C0.3, an interstitial carbide compound. The temperature dependence of the electrical resistivity, ac-susceptibility, and heat capacity (HC) indicate that a bulk type-II superconductivity appears at T-C - 15.3 K. Magneto-resistance measurements suggest an upper critical field of B-C2 similar to 10.6 T and a coherence length of xi similar to 55 angstrom at zero temperature. Neutron diffraction analyzes locate the carbon atoms at the interstitial 2b site of the Mn5Si3 type-structure. Heat capacity data below T-C are well described by BCS theory. The size of the jump at T-C is in good agreement with the superconducting volume fraction observed in susceptibility measurements. A Debye temperature and Sommerfeld constant were also extracted from heat capacity data as 343 K and 34 mJ/mol K-2, respectively. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4730611]

Effect of image resolution manipulation in rearfoot angle measurements obtained with photogrammetry

The aim of this study was to investigate the influence of image resolution manipulation on the photogrammetric measurement of the rearfoot static angle. The study design was that of a reliability study. We evaluated 19 healthy young adults (11 females and 8 males). The photographs were taken at 1536 pixels in the greatest dimension, resized into four different resolutions (1200, 768, 600, 384 pixels) and analyzed by three equally trained examiners on a 96-pixels per inch (ppi) screen. An experienced physiotherapist marked the anatomic landmarks of rearfoot static angles on two occasions within a 1-week interval. Three different examiners had marked angles on digital pictures. The systematic error and the smallest detectable difference were calculated from the angle values between the image resolutions and times of evaluation. Different resolutions were compared by analysis of variance. Inter- and intra-examiner reliability was calculated by intra-class correlation coefficients (ICC). The rearfoot static angles obtained by the examiners in each resolution were not different (P > 0.05); however, the higher the image resolution the better the inter-examiner reliability. The intra-examiner reliability (within a 1-week interval) was considered to be unacceptable for all image resolutions (ICC range: 0.08-0.52). The whole body image of an adult with a minimum size of 768 pixels analyzed on a 96-ppi screen can provide very good inter-examiner reliability for photogrammetric measurements of rearfoot static angles (ICC range: 0.85-0.92), although the intra-examiner reliability within each resolution was not acceptable. Therefore, this method is not a proper tool for follow-up evaluations of patients within a therapeutic protocol.

Self-assembled films from chitosan and poly(vinyl sulfonic acid) on Nafion® for direct methanol fuel cell

Chitosan/poly(vinyl sulfonic acid) (PVS) films have been prepared on Nafion® membranes by the layer-by-layer (LbL) method for use in direct methanol fuel cell (DMFC). Computational methods and Fourier transform infrared (FTIR) spectra suggest that an ionic pair is formed between the sulfonic group of PVS and the protonated amine group of chitosan, thereby promoting the growth of LbL films on the Nafion® membrane as well as partial blocking of methanol. Chronopotentiometry and potential linear scanning experiments have been carried out for investigation of methanol crossover through the Nafion® and chitosan/PVS/Nafion® membranes in a diaphragm diffusion cell. On the basis of electrical impedance measurements, the values of proton resistance of the Nafion® and chitosan/PVS/Nafion® membranes are close due to the small thickness of the LbL film. Thus, it is expected an improved DMFC performance once the additional resistance of the self-assembled film is negligible compared to the result associated with the decrease in the crossover effect.

Microstructure and metal-insulator transition in single crystalline KMo4O6

High quality KMo4O6 single crystals with tetragonal structure (space group P4/mbm) have been prepared by fused salt electrolysis. The crystals were studied by scanning electron microscopy (SEM), X-ray diffractometry, electrical resistivity, and magnetization measurements. X-ray powder diffraction patterns and SEM have given some information on the growth of single crystals. Electrical resistivity as a function of temperature shows that the KMo4O6 compound is a bad metal with resistivity change of approximately 30% in the temperature range from 2 to 300K. A metal-insulator transition (MIT), observed at approximately 110K, has been also confirmed for this material. Magnetization as a function of temperature agrees with previous report, however a magnetic ordering has been observed in M(H) curves in the whole temperature range.