Synthesis and photoluminescence of ZnS : Cu nanoparticles

The room-temperature photoluminescence (PL) of copper doped zinc sulfide (ZnS:Cu) nanoparticles were investigated. These ZnS:Cu nanoparticles were synthesized by a facile wet chemical method, with the copper concentration varying from 0 to 2 mol%. By Gaussian fitting, the PL spectrum of the undoped ZnS nanoparticles was deconvoluted into two blue luminescence peaks (centered at 411 nm and 455 nm, respectively), which both can be attributed to the recombination of the defect sates of ZnS. But for the doped samples, a third peak at about 500 nm was also identified. This green luminescence originates from the recombination between the shallow donor level (sulfur vacancy) and the t(2) level of Cu2+. With the increase of the CU2+ concentration, the green emission peak is systematically shifted to longer wavelength. In addition, it was found that the overall photoluminescence intensity is decreased at the Cu2+ concentration of 2%. The concentration quenching of the luminescence may be caused by the formation of CuS compound. (c) 2005 Elsevier B.V. All rights reserved.

长期施用氮、磷和有机肥对不同种植体系土壤有效硫累积的影响

以22年定位试验为基础,研究了长期施用氮、磷和有机肥(NPM)对不同种植体系土壤有效硫在剖面上分布与累积状况。结果表明,在60—80 cm土层各处理出现第一个累积峰,累积峰值为粮饲轮作31.3,玉米连作29.2,小麦连作27.9,粮豆轮作25.6,苜蓿连作24.0 mg/kg;在140—180 cm土层各处理又出现有效硫的第二个累积峰,累积峰值为粮饲轮作44.7,粮豆轮作43.1,小麦连作41.0,玉米连作39.7,苜蓿连作36.5 mg/kg。第二累积峰值均大于第一累积峰值。0—200 cm土层有效硫总累积量粮饲轮作高达746.3 kg/hm~2,其次为玉米连作640.6,粮豆轮作为638.3,小麦连作为622.4,苜蓿连作最小为557.3 kg/hm~2。长期施用磷肥和有机肥是有效硫在土壤中累积的主要因素,有效硫在土壤剖面上有向深层迁移的趋势。不同作物对硫的吸收利用差异和不同种植方式对有效硫的累积与分布产生影响。

黄土高原长期种植苜蓿对土壤硫、钙、镁的影响

以22年定位试验为基础,研究黄土高原长期种植紫花苜蓿(Medicago sativaL.)情况下土壤硫、钙、镁组分的变化。结果表明:长期施P使苜蓿连作耕层土壤总硫、有效硫、水溶性硫、吸附性硫、HCl可溶性硫、总无机硫和有机硫含量分别增加9.41%、62.41%、47.51%、30.07%、2.25%、5.38%和17.54%;长期施NPM使苜蓿连作耕层土壤总硫、有效硫、水溶性硫、吸附性硫、HCl可溶性硫、总无机硫和有机硫含量分别增加20.89%、98.31%、68.44%、57.34%、8.07%、12.54%和37.69%。长期施P使苜蓿连作耕层土壤全钙、有效钙、水溶态钙、交换态钙和酸溶态钙含量增加分别增加4.64%、4.27%、11.66%、4.05%和8.59%,但残余态钙含量降低2.21%;长期施NPM使苜蓿连作耕层土壤全钙、有效钙、水溶态钙、交换态钙和酸溶态钙含量增加分别增加8.69%、8.30%、51.59%、6.73%和27.77%,但残余态钙含量降低26.23%。长期施NPM使苜蓿连作耕层土壤全镁、有效镁、水溶态镁、交换态镁、酸溶态镁和残余态镁含量分别增加7.38%、61.98%、63.16%...

长期施氮磷化肥对不同种植体系土壤有效硫累积研究

以22 a定位试验为基础,在黄土高原旱地研究了长期施用氮磷化肥,对不同种植体系土壤有效硫在剖面上分布与累积状况。结果表明,在60-80 cm土层各处理出现第一个累积峰,累积峰值为:玉米-小麦(2 a)+糜子轮作27.07 mg/kg,豌豆-小麦(2 a)+糜子轮作25.42 mg/kg,小麦(2 a)+糜子-玉米轮作24.23 mg/kg,豌豆-小麦(2 a)+玉米轮作22.61 mg/kg,小麦连作16.56 mg/kg,红豆草-小麦(2 a)轮作15.14 mg/kg;在120-180 cm土层又出现有效硫的第二个累积峰,累积峰值为:小麦(2 a)+糜子-玉米轮作34.20 mg/kg,豌豆-小麦(2 a)+糜子轮作32.16 mg/kg,豌豆-小麦(2 a)+玉米轮作31.00 mg/kg,红豆草-小麦(2 a)轮作30.32mg/kg,玉米-小麦(2 a)+糜子轮作29.16 mg/kg,小麦连作26.22 mg/kg。0-200 cm土层有效硫总累积量玉米-小麦+糜子轮作高达559.64 kg/hm2,其次是小麦+糜子-玉米轮作为538.88 kg/hm2,豌豆-小麦+糜子轮作为514.34 kg/...

ELECTRONIC SPECTROSCOPY STUDIES OF A P2S5NH4OH TREATED GAS(100) SURFACE

Microscopic characteristics of the GaAs(100) surface treated with P2S5/NH4OH solution has been investigated by using Auger-electron spectroscopy (AES) and x-ray photoemission spectroscopy (XPS). AES reveals that only phosphorus and sulfur, but not oxygen, are contained in the interface between passivation film and GaAs substrate. Using XPS it is found that both Ga2O3 and As2O3 are removed from the GaAs surface by the P2S5/NH4OH treatment; instead, gallium sulfide and arsenic sulfide are formed. The passivation film results in a reduction of the density of states of the surface electrons and an improvement of the electronic and optical properties of the GaAs surface.

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface by rapid thermal annealing

Photoluminescence enhancement of (NH4)(2)S-x passivated InP surface followed by rapid thermal annealing (RTA) has been investigated by using photoluminescence (PL), Auger electron spectroscopy (AES) and X-ray photoelectron spectroscopy (XPS), An increase in PL intensity of up to 10 times was observed after sulfur passivation and RTA treatment compared to unpassivated InP surface. XPS measurement results show that introduction of RTA process can enhance the sulfur remaining on the passivated surface to bond to indium but no evidence of S-P bond is noticeable. Passivation enhancement mechanism is discussed.

PASSIVATION OF THE INP(100) SURFACE USING (NH4)(2)S-X

InP(100) surface treated with (NH4)(2)S-x has been investigated by using photoluminescence(PL), Auger electron spectroscopy and X-ray photoelectron spectroscopy. It is found that PL intensity increased by a factor of 3.3 after (NH4)(2)S-x passivation and the sulfur remained on the surface only bonded to indium, not to phosphorus. This suggests that the sulfur atoms replace the phosphorus atoms on the surface and occupy the phosphorus vacancies.