Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces

Les petites molécules de type p à bandes interdites étroites sont de plus en plus perçues comme des remplaçantes possibles aux polymères semi-conducteurs actuellement utilisés conjointement avec des dérivés de fullerènes de type n, dans les cellules photovoltaïques organiques (OPV). Par contre, ces petites molécules tendent à cristalliser facilement lors de leur application en couches minces et forment difficilement des films homogènes appropriés. Des dispositifs OPV de type hétérojonction de masse ont été réalisés en ajoutant différentes espèces de polymères semi-conducteurs ou isolants, agissant comme matrices permettant de rectifier les inhomogénéités des films actifs et d’augmenter les performances des cellules photovoltaïques. Des polymères aux masses molaires spécifiques ont été synthétisés par réaction de Wittig en contrôlant précisément les ratios molaires des monomères et de la base utilisée. L’effet de la variation des masses molaires en fonction des morphologies de films minces obtenus et des performances des diodes organiques électroluminescentes reliées, a également été étudié. La microscopie électronique en transmission (MET) ou à balayage (MEB) a été employée en complément de la microscopie à force atomique (AFM) pour suivre l’évolution de la morphologie des films organiques minces. Une nouvelle méthode rapide de préparation des films pour l’imagerie MET sur substrats de silicium est également présentée et comparée à d’autres méthodes d’extraction. Motivé par le prix élevé et la rareté des métaux utilisés dans les substrats d’oxyde d’indium dopé à l’étain (ITO), le développement d’une nouvelle méthode de recyclage eco-responsable des substrats utilisés dans ces études est également présenté.

CHARACTERIZATION OF RADIATION DAMAGE TO A NOVEL PHOTONIC CRYSTAL SENSOR

New methods of nuclear fuel and cladding characterization must be developed and implemented to enhance the safety and reliability of nuclear power plants. One class of such advanced methods is aimed at the characterization of fuel performance by performing minimally intrusive in-core, real time measurements on nuclear fuel on the nanometer scale. Nuclear power plants depend on instrumentation and control systems for monitoring, control and protection. Traditionally, methods for fuel characterization under irradiation are performed using a “cook and look” method. These methods are very expensive and labor-intensive since they require removal, inspection and return of irradiated samples for each measurement. Such fuel cladding inspection methods investigate oxide layer thickness, wear, dimensional changes, ovality, nuclear fuel growth and nuclear fuel defect identification. These methods are also not suitable for all commercial nuclear power applications as they are not always available to the operator when needed. Additionally, such techniques often provide limited data and may exacerbate the phenomena being investigated. This thesis investigates a novel, nanostructured sensor based on a photonic crystal design that is implemented in a nuclear reactor environment. The aim of this work is to produce an in-situ radiation-tolerant sensor capable of measuring the deformation of a nuclear material during nuclear reactor operations. The sensor was fabricated on the surface of nuclear reactor materials (specifically, steel and zirconium based alloys). Charged-particle and mixed-field irradiations were both performed on a newly-developed “pelletron” beamline at Idaho State University's Research and Innovation in Science and Engineering (RISE) complex and at the University of Maryland's 250 kW Training Reactor (MUTR). The sensors were irradiated to 6 different fluences (ranging from 1 to 100 dpa), followed by intensive characterization using focused ion beam (FIB), transmission electron microscopy (TEM) and scanning electron microscopy (SEM) to investigate the physical deformation and microstructural changes between different fluence levels, to provide high-resolution information regarding the material performance. Computer modeling (SRIM/TRIM) was employed to simulate damage to the sensor as well as to provide significant information concerning the penetration depth of the ions into the material.

Evaluating, predicting and mapping belowground carbon stores in Kenyan mangroves.

Despite covering only approximately 138,000 km2, mangroves are globally important carbon sinks with carbon density values 3 to 4 times that of terrestrial forests. A key challenge in evaluating the carbon benefits from mangrove forest conservation is the lack of rigorous spatially resolved estimates of mangrove sediment carbon stocks; most mangrove carbon is stored belowground. Previous work has focused on detailed estimations of carbon stores over relatively small areas, which has obvious limitations in terms of generality and scope of application. Most studies have focused only on quantifying the top 1m of belowground carbon (BGC). Carbon stored at depths beyond 1m, and the effects of mangrove species, location and environmental context on these stores, is poorly studied. This study investigated these variables at two sites (Gazi and Vanga in the south of Kenya) and used the data to produce a country-specific BGC predictive model for Kenya and map BGC store estimates throughout Kenya at spatial scales relevant for climate change research, forest management and REDD+ (Reduced Emissions from Deforestation and Degradation). The results revealed that mangrove species was the most reliable predictor of BGC; Rhizophora muronata had the highest mean BGC with 1485.5t C ha-1. Applying the species-based predictive model to a base map of species distribution in Kenya for the year 2010 with a 2.5m2 resolution, produced an estimate of 69.41 Mt C (± 9.15 95% C.I.) for BGC in Kenyan mangroves. When applied to a 1992 mangrove distribution map, the BGC estimate was 75.65 Mt C (± 12.21 95% C.I.); an 8.3% loss in BGC stores between 1992 and 2010 in Kenya. The country level mangrove map provides a valuable tool for assessing carbon stocks and visualising the distribution of BGC. Estimates at the 2.5m2 resolution provide sufficient detail for highlighting and prioritising areas for mangrove conservation and restoration.

Dispositifs optoélectroniques à base de semi-conducteurs organiques en couches minces

Les petites molécules de type p à bandes interdites étroites sont de plus en plus perçues comme des remplaçantes possibles aux polymères semi-conducteurs actuellement utilisés conjointement avec des dérivés de fullerènes de type n, dans les cellules photovoltaïques organiques (OPV). Par contre, ces petites molécules tendent à cristalliser facilement lors de leur application en couches minces et forment difficilement des films homogènes appropriés. Des dispositifs OPV de type hétérojonction de masse ont été réalisés en ajoutant différentes espèces de polymères semi-conducteurs ou isolants, agissant comme matrices permettant de rectifier les inhomogénéités des films actifs et d’augmenter les performances des cellules photovoltaïques. Des polymères aux masses molaires spécifiques ont été synthétisés par réaction de Wittig en contrôlant précisément les ratios molaires des monomères et de la base utilisée. L’effet de la variation des masses molaires en fonction des morphologies de films minces obtenus et des performances des diodes organiques électroluminescentes reliées, a également été étudié. La microscopie électronique en transmission (MET) ou à balayage (MEB) a été employée en complément de la microscopie à force atomique (AFM) pour suivre l’évolution de la morphologie des films organiques minces. Une nouvelle méthode rapide de préparation des films pour l’imagerie MET sur substrats de silicium est également présentée et comparée à d’autres méthodes d’extraction. Motivé par le prix élevé et la rareté des métaux utilisés dans les substrats d’oxyde d’indium dopé à l’étain (ITO), le développement d’une nouvelle méthode de recyclage eco-responsable des substrats utilisés dans ces études est également présenté.

Termoterapia de banana 'Prata-Anã' no controle de podridões em pós-colheita

O objetivo desse estudo foi determinar a tolerância de banana (Musa spp.) 'Prata-Anã' (AAB) e do fungo Colletotrichum musae à termoterapia no controle de podridões em pós-colheita. Experimentos in vivo e in vitro foram instalados em delineamento inteiramente casualizado, seguindo um esquema fatorial 4x5 (temperatura x tempo). Os tratamentos consistiram na imersão dos frutos (buquês) e do fungo (esporos e micélio) em água aquecida a 47, 50, 53 e 56 ºC, durante 0, 3, 6, 9 e 12 min. A exposição dos frutos a 56 ºC durante 9 min causou escurecimento da casca nas extremidades dos frutos, porém, as características físicas e químicas dos frutos não foram alteradas pelos tratamentos. Frutos inoculados e tratados a 56 ºC durante 6 min não apresentaram podridões nem escurecimento da casca, enquanto aqueles não tratados apresentaram 64% da área lesionada / fruto. A partir das combinações 53 ºC / 9 mi. e 56 ºC / 3 min a germinação de esporos foi reduzida para 4% e 0%, respectivamente. A combinação 56 ºC / 12 min reduziu, mas não paralisou o crescimento micelial. O tratamento 56 ºC / 6 min retardou mas não paralisou o crescimento micelial in vitro, porém foi efetivo no controle completo das podridões in vivo. Esse tratamento evitou a manifestação de podridões no inverno (maio), mas não no verão (novembro), mostrando-se influenciado pelas condições climáticas próximas à colheita dos cachos. A termoterapia pode ser recomendada para controle de podridão em pós-colheita de banana devendo ser ajustada para diferentes estações do ano.

Rifles de salón y juguetes para conseguir novio

Fondo Margaritainés Restrepo

Factores de éxito en el programa de responsabilidad social empresarial (RSE) para el sector salud, aplicación de la norma ISO 26000 en la IPS Fundación Cardio Infantil

El presente estudio tiene como objetivo mostrar los factores de éxito del programa de Responsabilidad Social de la Fundación Cardioinfantil, teniendo en cuenta que esta institución se ha convertido en un referente de compromiso social y sostenibilidad en el sector salud y en las instituciones de cuarto nivel de complejidad. Para alcanzar este objetivo se realizaron visitas y se aplicó un instrumento en la Fundación Cardioinfantil y en cuatro instituciones más del mismo nivel de atención en las ciudades de Bogotá, Cali y Medellín, donde generosamente aportaron información acerca del desarrollo de sus programas de Responsabilidad Social y de la aplicación de los tópicos contenidos en la ISO 26000 dentro de sus instituciones. Así mismo dentro de la Fundación Cardioinfantil se realizó una entrevista con la persona encargada de desarrollar el programa, quien manifestó los detalles del funcionamiento de este y los esfuerzos realizados para lograr la diferenciación en el sector salud. A través de este recorrido por las diferentes instituciones de salud consultadas y de la investigación realizada en la fundación Cardioinfantil se realizó una matriz DOFA que nos reveló la falta de comunicación en las mejoras realizadas en las diferentes organizaciones de salud, una vez han detectado las fallas en inherentes a su actuación con los grupos de interés. La adopción de estándares internacionales para la gobernanza y aplicación de los programas de RSE aún es incipiente en el sector salud en general. También es posible resaltar el hecho de que programas de RSE desarrollados a nivel de la fundación Cardioinfantil evolucionan hacia la innovación en la calidad de la atención y la trasformación de sus organizaciones hacia la mejora continua.

REDUCTION OF CRYSTALLINE DISORDER IN MOLECULAR-BEAM EPITAXY GAAS ON SI BY MEV ION-IMPLANTATION AND SUBSEQUENT ANNEALING

Molecular beam epitaxy GaAs films on Si, with thicknesses ranging from 0.9-2.0-mu-m, were implanted with Si ions at 1.2-2.6 MeV to doses in the range 10(15)-10(16) cm-2. Subsequent rapid infrared thermal annealing was carried out at 850-degrees-C for 15 s in a flowing N2 atmosphere. Crystalline quality was analyzed by using Rutherfold backscattering/channeling technique and Raman scattering spectrometry. The experimental results show that the recrystallization process greatly depends on the dose and energy of implanted ions. Complete recrystallization with better crystalline quality can be obtained under proper implantation and subsequent annealing. In the improved layer the defect density was much lower than in the as-grown layer, especially near the interface.

Scientific program of the Radioactive Ion Beams Facility in Brasil (RIBRAS)

The RIBRAS facility (Radioactive Ion Beams in Brasil) is installed in connection with the 8MV Pelletron tandem of the University of Sao Paulo Physics Institute. It consists of two superconducting solenoids which focalize light radioactive secondary beams of low energy, produced by transfer reactions. Recent experimental results include the elastic scattering and transfer reactions of (6)He halo nucleus on (9)Be, (27)Al, (51)V and (120)Sn targets. The elastic scattering and transfer of (8)Li and (7)Be on several targets is also being studied. The transfer reaction (8)Li(p,alpha)(5)He of astrophysical interest was also Studied in the E(cm)=0.2-2.5 MeV energy range.

High energy oxygen ion induced modifications in lead based perovskite thin films

The lead based ferroelectric PbZr0.53Ti0.47O3 (PZT), (Pb0.90La0.10)TiO3 (PLT10) and (Pb0.80La0.20)TiO3 (PLT20) thin films, prepared by pulsed laser ablation technique, were studied for their response to the 70 MeV oxygen ion irradiation. The dielectric analysis, capacitance-voltage (C- V) and DC leakage current measurements were performed before and after the irradiation to high-energy oxygen ions. The irradiation produced considerable changes in the dielectric, C-V, leakage characteristics and induced some amount of amorphization. The PZT films showed partial recrystallization after a thermal annealing at 400 degrees C for 10 min. The phase transition temperature [T-c] of PLT20 increased from 115 degrees C to 120 degrees C. The DC conductivity measurements showed a shift in the onset of non-linear conduction region. The current density decreased by two orders of magnitude after irradiation. After annealing the irradiated films at a temperature of 400 degrees C for 10 min, the films partially regained the dielectric and electrical properties. The results are discussed in terms of the irradiation-induced amorphization, the pinning of the ferroelectric domains by trapped charges and the thermal annealing of the defects generated during the irradiation. (C) 2007 Elsevier B.V. All rights reserved.

LiSr1.65 square 0.35B1.3B ' O-1.7(9) (B = Ti, Zr; B ' = Nb, Ta): New lithium ion conductors based on the perovskite structure

We describe the design and synthesis of new lithium ion conductors with the formula, LiSr(1.65)rectangle(0.35)B(1.3)B'O-1.7(9) (rectangle = vacancy; B = Ti, Zr; B' = Nb, Ta), on the basis of a systematic consideration of the composition-structure-property correlations in the well-known lithium-ion conductor, La-(2/3-x)Li(3x)rectangle((1/3)-2x)TiO3 (I), as well as the perovskite oxides in Li-A-B,B'-O (A = Ca, Sr, Ba; B = Ti, Zr; B' = Nb, Ta) systems. A high lithium-ion conductivity of ca. 0.12 S/cm at 360 degrees C is exhibited by LiSr(1.65)rectangle(0.35)Ti(1.3)Ta(1.7)O(9) (III) and LiSr(1.65)rectangle(0.35)Zr(1.3)Ta(1.7)O(9) (IV), of which the latter containing stable Zr(IV) and Ta(V) oxidation states is likely to be a candidate electrolyte material for all-solid-state lithium battery application. More importantly, we believe the approach described here could be extended to synthesize newer, possibly better, lithium ion conductors.

The preparation, characterization and tribological properties of TA-C : H deposited using an electron cyclotron wave resonance plasma beam source

A compact electron cyclotron wave resonance (ECWR) source has been developed for the high rate deposition of hydrogenated tetrahedral amorphous carbon (ta-C:H). The ECWR provides growth rates of up to 900 Å/min over a 4″ diameter and an independent control of the deposition rate and ion energy. The ta-C:H was deposited using acetylene as the source gas and was characterized in terms of its sp3 content, mass density, intrinsic stress, hydrogen content, C-H bonding, Raman spectra, optical gap, surface roughness and friction coefficient. The results obtained indicated that the film properties were maximized at an ion energy of approximately 167 eV, corresponding to an energy per daughter carbon ion of 76 eV. The relationship between the incident ion energy and film densification was also explained in terms of the subsurface implantation of carbon ions into the growing film.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

Laser-induced damage threshold of ZrO2 thin films prepared at different oxygen partial pressures by electron-beam evaporation

ZrO2, films were deposited by electron-beam evaporation with the oxygen partial pressure varying from 3 X 10(-3) Pa to I I X 10(-3) Pa. The phase structure of the samples was characterized by x-ray diffraction (XRD). The thermal absorption of the films was measured by the surface thermal lensing technique. A spectrophotometer was employed to measure the refractive indices of the samples. The laser-induced damage threshold (LIDT) was assessed using a 1064, nm Nd: yttritium-aluminium-garnet pulsed laser at pulse width of 12 ns. The influence of oxygen partial pressure on the microstructure and LIDT of ZrO2 films was investigated. XRD data revealed that the films changed from polycrystalline to amorphous as the oxygen partial pressure increased. The variation of refractive index at 550 nm wavelength indicated that the packing density of the films decreased gradually with increasing oxygen partial pressure. The absorptance of the samples decreased monotonically from 125.2 to 84.5 ppm with increasing oxygen partial pressure. The damage threshold, values increased from 18.5 to 26.7 J/cm(2) for oxygen partial pressures varying from 3 X 10(-3) Pa to 9 X 10(-3) Pa, but decreased to 17.3 J/cm(2) in the case of I I X 10(-3) Pa. (C) 2005 American Vacuum Society.

High laser-induced damage threshold HfO2 films prepared by ion-assisted electron beam evaporation

HfO2 films were deposited by electron beam evaporation with different deposition parameters. The properties such as refractive index, weak absorption, and laser induced damage thresholds (LIDTs) of these films have been investigated. It was found that when pulsed Nd:YAG 1064 nm laser is used to investigate LIDT of films: Metallic character is the main factor that influences LIDTs of films obtained from Hf starting material by ion-assisted reaction, and films prepared with higher momentum transfer parameter P have fewer metallic character; The ion-assisted reaction parameters are key points for preparing high LIDT films and if the parameters are chose properly, high LIDT films can be obtained. (c) 2004 Elsevier B.V. All rights reserved.